JP6226746B2 - 対称給電構造を有する基板サポート - Google Patents
対称給電構造を有する基板サポート Download PDFInfo
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- JP6226746B2 JP6226746B2 JP2013535078A JP2013535078A JP6226746B2 JP 6226746 B2 JP6226746 B2 JP 6226746B2 JP 2013535078 A JP2013535078 A JP 2013535078A JP 2013535078 A JP2013535078 A JP 2013535078A JP 6226746 B2 JP6226746 B2 JP 6226746B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- Physics & Mathematics (AREA)
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- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
Claims (11)
- 基板を支持するための支持面を有し、中心軸を有する基板支持体と、
DCエネルギーが第2電極に供給されたときに、前記基板支持体上に配置された基板を静電保持するために、第1電極の上方の誘電体層内に配置された第2電極と、
前記第1電極と前記支持面の間に配置され、基板が基板支持体上に存在するときに、複数のヒーター電極へのACエネルギーの印加に応答して、基板に熱を供給する複数のヒーター電極と、
対称給電構造を含み、対称給電構造は、
基板が前記支持面上に配置されたときに、基板にRF電力を供給するために、前記基板支持体内に配置された第1電極と、
前記支持面に対向する前記第1電極の表面の中心の周囲で、前記第1電極に結合された内側導体であって、前記内側導体は、筒状であり、前記中心軸に平行で前記中心軸の周囲にある前記第1電極から、前記基板支持体の前記支持面から離れた方向に延在している内側導体と、
前記内側導体の軸方向の開口部内の内側誘電体層内に配置された複数の導体であって、複数の導体は、
前記中心軸に沿って前記内側誘電体層内に中央配置され、前記第2電極をDC電源に結合する第2導体と、
前記中心軸の周囲に対称的に配置される第3導体であって、前記複数の第3導体の夫々1つが、前記複数のヒーター電極の対応する1つに結合されている複数の第3導体を含む複数の導体と、
前記内側導体の周囲に配置された外側導体と、
前記内側導体と前記外側導体の間に配置され、前記外側導体を前記内側導体から電気的に絶縁する外側誘電体層を含む基板支持体。 - 前記外側導体は電気的接地に結合されている請求項1記載の基板支持体。
- 前記外側導体に結合された導電板を含む請求項2記載の基板支持体。
- 前記第1電極と前記導電板の間に配置された誘電体層を含む請求項3記載の基板支持体。
- 前記第1電極の下方で前記内側導体に結合される第1導体を含み、前記第1導体は、前記内側導体から、前記中心軸から軸を外して配置されたRF電源まで横方向に延在し、前記RF電源は、前記第1電極までRF電力を供給し、前記導電板は、前記第1電極と前記第1導体の間に配置される請求項4記載の基板支持体。
- 前記第1導体の周囲に配置された接地ケースと、
前記第1導体から前記接地ケースを電気的に絶縁するために、前記第1導体と前記接地ケースの間に配置された第2誘電体層を含む請求項5記載の基板支持体。 - 前記ヒーター電極は、複数のゾーン内に配置されている請求項1記載の基板支持体。
- 前記複数の第3導体の夫々1つを、前記複数のヒーター電極の対応する1つに結合するための、前記第1電極の上方に配置された配電板を含む請求項1記載の基板支持体。
- 誘電体層であって、前記第1電極が前記誘電体層と前記支持面の間に配置された誘電体層と、
前記第1電極とは反対の前記誘電体層の側に配置された導電板を含む請求項1記載の基板支持体。 - 内部容積内に配置された基板支持体を備えた内部容積を有する処理チャンバであって、前記基板支持体は支持面と中心軸を有する処理チャンバと、
DCエネルギーが第2電極に供給されたときに、前記基板支持体上に配置された基板を静電保持するために、第1電極の上方の誘電体層内に配置された第2電極と、
前記第1電極と前記支持面の間に配置され、基板が基板支持体上に存在するときに、複数のヒーター電極へのACエネルギーの印加に応答して、基板に熱を供給する複数のヒーター電極と、
対称給電構造を含み、対称給電構造は、
前記基板支持体上に基板が存在するときに、基板にRF電力を供給するために、前記基板支持体内に配置された第1電極と、
前記支持面から離れて対向する前記第1電極の表面の中心の周囲で、前記第1電極と結合された第1端部を有する内側導体であって、前記内側導体は、管状であり、前記中心軸に平行で前記中心軸の周囲にある前記第1電極から離れて延在する内側導体と、
内側導体の軸方向開口部内の内側誘電体層内に、前記中心軸に対して対称的に配置された複数の導体であって、複数の導体は、
前記中心軸に沿って前記内側誘電体層内に中央配置され、前記第2電極をDC電源に結合する第2導体と、
前記中心軸の周囲に対称的に配置される第3導体であって、前記複数の第3導体の夫々1つが、前記複数のヒーター電極の対応する1つに結合されている複数の第3導体を含む複数の導体と、
前記内側導体の周囲に配置された外側導体と、
前記内側導体と前記外側導体の間に配置され、前記外側導体を前記内側導体から電気的に絶縁する外側誘電体層と、
前記第1端部とは反対の前記内側導体の第2端部に近接して前記内側導体に結合された第1導体であって、前記第1導体は、前記中心軸から、前記中心軸から軸を外して配置されたRF電源に向かって横方向に延在し、前記RF電源は、前記第1電極にRF電力を供給する第1導体と、
前記第1電極と前記第1導体の間に配置され、前記外側導体に結合された導電板であって、前記導電板と外側導体は電気的接地に結合された導電板と、
前記導電板と前記第1電極との間に配置された誘電体層を含むプラズマ処理装置。 - 前記複数の第3導体の夫々1つを、前記複数のヒーター電極の対応する1つに結合するための、前記第1電極の上方に配置された配電板を含む請求項10記載のプラズマ処理装置。
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US12/910,547 US9123762B2 (en) | 2010-10-22 | 2010-10-22 | Substrate support with symmetrical feed structure |
US12/910,547 | 2010-10-22 | ||
PCT/US2011/057024 WO2012054689A2 (en) | 2010-10-22 | 2011-10-20 | Substrate support with symmetrical feed structure |
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JP2017124857A Division JP6330087B2 (ja) | 2010-10-22 | 2017-06-27 | 対称給電構造を有する基板サポート |
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JP2013543269A JP2013543269A (ja) | 2013-11-28 |
JP2013543269A5 JP2013543269A5 (ja) | 2014-12-04 |
JP6226746B2 true JP6226746B2 (ja) | 2017-11-08 |
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JP2013535078A Active JP6226746B2 (ja) | 2010-10-22 | 2011-10-20 | 対称給電構造を有する基板サポート |
JP2017124857A Active JP6330087B2 (ja) | 2010-10-22 | 2017-06-27 | 対称給電構造を有する基板サポート |
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US (3) | US9123762B2 (ja) |
JP (2) | JP6226746B2 (ja) |
KR (2) | KR101950330B1 (ja) |
CN (1) | CN103081086B (ja) |
TW (2) | TWI590373B (ja) |
WO (1) | WO2012054689A2 (ja) |
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US20150371877A1 (en) | 2015-12-24 |
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