CN103081020B - 在具有第一磁性隧道结及第二磁性隧道结的位单元处产生不可逆状态 - Google Patents

在具有第一磁性隧道结及第二磁性隧道结的位单元处产生不可逆状态 Download PDF

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Publication number
CN103081020B
CN103081020B CN201180042714.3A CN201180042714A CN103081020B CN 103081020 B CN103081020 B CN 103081020B CN 201180042714 A CN201180042714 A CN 201180042714A CN 103081020 B CN103081020 B CN 103081020B
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China
Prior art keywords
mtj
value
place
voltage
bitcell
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CN201180042714.3A
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English (en)
Chinese (zh)
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CN103081020A (zh
Inventor
哈里·M·拉奥
金正丕
升·H·康
朱晓春
金泰贤
李康浩
李霞
徐华南
郝武扬
徐钟元
尼古拉斯·K·于
马修·迈克尔·诺瓦克
史蒂文·M·米伦多夫
阿萨夫·阿什克纳济
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Qualcomm Inc
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Qualcomm Inc
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Publication of CN103081020B publication Critical patent/CN103081020B/zh
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/06—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using diode elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1655—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/02—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using magnetic or inductive elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/027—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in fuses

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
CN201180042714.3A 2010-08-03 2011-08-03 在具有第一磁性隧道结及第二磁性隧道结的位单元处产生不可逆状态 Active CN103081020B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/849,043 US8547736B2 (en) 2010-08-03 2010-08-03 Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction
US12/849,043 2010-08-03
PCT/US2011/046429 WO2012018918A2 (en) 2010-08-03 2011-08-03 Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction

Publications (2)

Publication Number Publication Date
CN103081020A CN103081020A (zh) 2013-05-01
CN103081020B true CN103081020B (zh) 2016-06-29

Family

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Family Applications (1)

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CN201180042714.3A Active CN103081020B (zh) 2010-08-03 2011-08-03 在具有第一磁性隧道结及第二磁性隧道结的位单元处产生不可逆状态

Country Status (17)

Country Link
US (2) US8547736B2 (ja)
EP (1) EP2601655B1 (ja)
JP (2) JP5670570B2 (ja)
KR (1) KR101445989B1 (ja)
CN (1) CN103081020B (ja)
AR (1) AR082475A1 (ja)
AU (1) AU2011285791A1 (ja)
BR (1) BR112013002528B1 (ja)
CA (1) CA2807392C (ja)
ES (1) ES2718487T3 (ja)
HK (1) HK1181916A1 (ja)
HU (1) HUE043517T2 (ja)
IN (1) IN2013MN00318A (ja)
RU (1) RU2553087C2 (ja)
SG (1) SG187688A1 (ja)
TW (2) TWI467575B (ja)
WO (1) WO2012018918A2 (ja)

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US9262259B2 (en) 2013-01-14 2016-02-16 Qualcomm Incorporated One-time programmable integrated circuit security
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US9548118B1 (en) * 2015-09-22 2017-01-17 Arm Ltd. Method, system and device for complementary non-volatile memory device operation
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US10742338B2 (en) * 2018-01-26 2020-08-11 Clip Interactive, Llc Seamless integration of radio broadcast audio with streaming audio
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CN101553878A (zh) * 2005-06-24 2009-10-07 艾沃思宾技术公司 包含并联连接的基准磁隧道结以提供最优基准阻抗的磁隧道结反熔丝电路

Also Published As

Publication number Publication date
TW201511018A (zh) 2015-03-16
US8547736B2 (en) 2013-10-01
EP2601655A2 (en) 2013-06-12
TWI553647B (zh) 2016-10-11
SG187688A1 (en) 2013-03-28
BR112013002528B1 (pt) 2020-12-22
TW201214436A (en) 2012-04-01
US20140010006A1 (en) 2014-01-09
BR112013002528A2 (pt) 2016-05-31
EP2601655B1 (en) 2019-01-02
US8797792B2 (en) 2014-08-05
AU2011285791A1 (en) 2013-02-28
HUE043517T2 (hu) 2019-08-28
CN103081020A (zh) 2013-05-01
WO2012018918A2 (en) 2012-02-09
AR082475A1 (es) 2012-12-12
ES2718487T3 (es) 2019-07-02
US20120033490A1 (en) 2012-02-09
WO2012018918A3 (en) 2012-05-31
TWI467575B (zh) 2015-01-01
JP5670570B2 (ja) 2015-02-18
CA2807392C (en) 2014-12-16
KR20130036771A (ko) 2013-04-12
JP2013537679A (ja) 2013-10-03
HK1181916A1 (zh) 2013-11-15
IN2013MN00318A (ja) 2015-05-29
CA2807392A1 (en) 2012-02-09
RU2013109271A (ru) 2014-09-10
JP2015092430A (ja) 2015-05-14
KR101445989B1 (ko) 2014-09-29
RU2553087C2 (ru) 2015-06-10

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