HK1181916A1 - 在具有第磁性隧道結及第二磁性隧道結的位單元處產生不可逆狀態 - Google Patents

在具有第磁性隧道結及第二磁性隧道結的位單元處產生不可逆狀態

Info

Publication number
HK1181916A1
HK1181916A1 HK13109043.3A HK13109043A HK1181916A1 HK 1181916 A1 HK1181916 A1 HK 1181916A1 HK 13109043 A HK13109043 A HK 13109043A HK 1181916 A1 HK1181916 A1 HK 1181916A1
Authority
HK
Hong Kong
Prior art keywords
tunnel junction
magnetic tunnel
bitcell
generating
reversible state
Prior art date
Application number
HK13109043.3A
Other languages
English (en)
Inventor
哈里．
．拉奧
金正丕
升．
．康
朱曉春
金泰賢
李康浩
李霞
徐華南
郝武揚
徐鍾元
尼古拉斯．
．于
馬修．邁克爾．諾瓦克
史蒂文．
．米倫多夫
阿薩夫．阿什克納濟
Original Assignee
高通股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 高通股份有限公司 filed Critical 高通股份有限公司
Publication of HK1181916A1 publication Critical patent/HK1181916A1/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/06—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using diode elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1655—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/02—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using magnetic or inductive elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/027—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in fuses

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
HK13109043.3A 2010-08-03 2013-08-02 在具有第磁性隧道結及第二磁性隧道結的位單元處產生不可逆狀態 HK1181916A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/849,043 US8547736B2 (en) 2010-08-03 2010-08-03 Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction
PCT/US2011/046429 WO2012018918A2 (en) 2010-08-03 2011-08-03 Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction

Publications (1)

Publication Number Publication Date
HK1181916A1 true HK1181916A1 (zh) 2013-11-15

Family

ID=44583401

Family Applications (1)

Application Number Title Priority Date Filing Date
HK13109043.3A HK1181916A1 (zh) 2010-08-03 2013-08-02 在具有第磁性隧道結及第二磁性隧道結的位單元處產生不可逆狀態

Country Status (17)

Country Link
US (2) US8547736B2 (zh)
EP (1) EP2601655B1 (zh)
JP (2) JP5670570B2 (zh)
KR (1) KR101445989B1 (zh)
CN (1) CN103081020B (zh)
AR (1) AR082475A1 (zh)
AU (1) AU2011285791A1 (zh)
BR (1) BR112013002528B1 (zh)
CA (1) CA2807392C (zh)
ES (1) ES2718487T3 (zh)
HK (1) HK1181916A1 (zh)
HU (1) HUE043517T2 (zh)
IN (1) IN2013MN00318A (zh)
RU (1) RU2553087C2 (zh)
SG (1) SG187688A1 (zh)
TW (2) TWI467575B (zh)
WO (1) WO2012018918A2 (zh)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9084276B2 (en) * 2009-09-11 2015-07-14 Aerovironment, Inc. Dynamic transmission control for a wireless network
US8547736B2 (en) * 2010-08-03 2013-10-01 Qualcomm Incorporated Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction
US9135978B2 (en) 2012-07-11 2015-09-15 Micron Technology, Inc. Memory programming methods and memory systems
US8923044B2 (en) 2012-08-20 2014-12-30 Qualcomm Incorporated MTP MTJ device
US9165631B2 (en) * 2012-09-13 2015-10-20 Qualcomm Incorporated OTP scheme with multiple magnetic tunnel junction devices in a cell
US9262259B2 (en) 2013-01-14 2016-02-16 Qualcomm Incorporated One-time programmable integrated circuit security
US9183082B2 (en) * 2013-01-29 2015-11-10 Qualcomm Incorporated Error detection and correction of one-time programmable elements
US9105310B2 (en) * 2013-02-05 2015-08-11 Qualcomm Incorporated System and method of programming a memory cell
WO2014124271A1 (en) 2013-02-08 2014-08-14 Everspin Technologies, Inc. Tamper detection and response in a memory device
US9218509B2 (en) 2013-02-08 2015-12-22 Everspin Technologies, Inc. Response to tamper detection in a memory device
US9293196B2 (en) 2013-03-15 2016-03-22 Micron Technology, Inc. Memory cells, memory systems, and memory programming methods
US9330747B2 (en) * 2013-05-14 2016-05-03 Intel Corporation Non-volatile latch using spin-transfer torque memory device
US9298946B2 (en) * 2013-09-09 2016-03-29 Qualcomm Incorporated Physically unclonable function based on breakdown voltage of metal-insulator-metal device
US9495899B2 (en) * 2013-09-25 2016-11-15 Qualcomm Incorporated Contactless data communication using in-plane magnetic fields, and related systems and methods
WO2015116144A1 (en) * 2014-01-31 2015-08-06 Hewlett-Packard Development Company, L.P. Resistive ratio-based memory cell
KR102235043B1 (ko) 2014-06-09 2021-04-05 삼성전자주식회사 반도체 메모리 장치
KR20160122478A (ko) * 2015-04-14 2016-10-24 에스케이하이닉스 주식회사 전자 장치
US9548118B1 (en) * 2015-09-22 2017-01-17 Arm Ltd. Method, system and device for complementary non-volatile memory device operation
US10311928B2 (en) 2015-10-15 2019-06-04 Samsung Electronics Co., Ltd. Semiconductor devices including reversible and one-time programmable magnetic tunnel junctions
KR102398177B1 (ko) * 2015-10-15 2022-05-18 삼성전자주식회사 자기 메모리 장치
US9614144B1 (en) 2015-12-21 2017-04-04 International Business Machines Corporation Otp mram
US9715916B1 (en) 2016-03-24 2017-07-25 Intel Corporation Supply-switched dual cell memory bitcell
US10742338B2 (en) * 2018-01-26 2020-08-11 Clip Interactive, Llc Seamless integration of radio broadcast audio with streaming audio
US10855287B2 (en) 2018-02-20 2020-12-01 United States Of America, As Represented By The Secretary Of The Navy Non-volatile multiple time programmable integrated circuit system with selective conversion to one time programmable or permanent configuration bit programming capabilities and related methods
US10665281B1 (en) * 2019-02-27 2020-05-26 Globalfoundries Inc. Resistive nonvolatile memory cells with shared access transistors
KR102677729B1 (ko) 2019-03-15 2024-06-25 소니 세미컨덕터 솔루션즈 가부시키가이샤 반도체 회로 및 전자 기기
US11264991B2 (en) 2019-11-26 2022-03-01 The Trustees Of Indiana University Field-programmable gate array with updatable security schemes
US20230267982A1 (en) * 2022-02-24 2023-08-24 Everspin Technologies, Inc. Low resistance mtj antifuse circuitry designs and methods of operation

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08123717A (ja) * 1994-10-25 1996-05-17 Oki Electric Ind Co Ltd 半導体記憶装置
US6272041B1 (en) * 2000-08-28 2001-08-07 Motorola, Inc. MTJ MRAM parallel-parallel architecture
US6324093B1 (en) * 2000-09-15 2001-11-27 Hewlett-Packard Company Write-once thin-film memory
TW584976B (en) * 2000-11-09 2004-04-21 Sanyo Electric Co Magnetic memory device
JP3768143B2 (ja) * 2000-11-09 2006-04-19 三洋電機株式会社 磁気メモリ装置
JP3920564B2 (ja) * 2000-12-25 2007-05-30 株式会社東芝 磁気ランダムアクセスメモリ
JP2002230965A (ja) * 2001-01-24 2002-08-16 Internatl Business Mach Corp <Ibm> 不揮発性メモリ装置
US6490217B1 (en) * 2001-05-23 2002-12-03 International Business Machines Corporation Select line architecture for magnetic random access memories
JP4073690B2 (ja) 2001-11-14 2008-04-09 株式会社ルネサステクノロジ 薄膜磁性体記憶装置
US6801471B2 (en) * 2002-02-19 2004-10-05 Infineon Technologies Ag Fuse concept and method of operation
US6751149B2 (en) 2002-03-22 2004-06-15 Micron Technology, Inc. Magnetic tunneling junction antifuse device
JP3808799B2 (ja) 2002-05-15 2006-08-16 株式会社東芝 磁気ランダムアクセスメモリ
JP2004110992A (ja) * 2002-09-20 2004-04-08 Renesas Technology Corp 薄膜磁性体記憶装置
KR100923298B1 (ko) * 2003-01-18 2009-10-23 삼성전자주식회사 단위 셀이 한 개의 트랜지스터와 두 개의 ｍｔｊ로 구성된ｍｒａｍ 및 그 제조방법
JP4278438B2 (ja) * 2003-05-27 2009-06-17 三洋電機株式会社 不揮発性半導体記憶装置及びその制御方法
JP4334284B2 (ja) * 2003-06-26 2009-09-30 株式会社東芝 磁気ランダムアクセスメモリ
US6943040B2 (en) 2003-08-28 2005-09-13 Headway Technologes, Inc. Magnetic random access memory designs with controlled magnetic switching mechanism by magnetostatic coupling
US7536612B2 (en) * 2003-08-29 2009-05-19 International Business Machines Corporation Field spike monitor for MRAM
KR100835275B1 (ko) * 2004-08-12 2008-06-05 삼성전자주식회사 스핀 주입 메카니즘을 사용하여 자기램 소자를 구동시키는방법들
JP2005235244A (ja) * 2004-02-17 2005-09-02 Renesas Technology Corp 半導体記憶装置
JP3869430B2 (ja) * 2004-05-11 2007-01-17 株式会社東芝 磁気ランダムアクセスメモリ
US20060039183A1 (en) * 2004-05-21 2006-02-23 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-sensing level MRAM structures
US7085183B2 (en) * 2004-07-13 2006-08-01 Headway Technologies, Inc. Adaptive algorithm for MRAM manufacturing
US7224630B2 (en) * 2005-06-24 2007-05-29 Freescale Semiconductor, Inc. Antifuse circuit
US8120949B2 (en) 2006-04-27 2012-02-21 Avalanche Technology, Inc. Low-cost non-volatile flash-RAM memory
US7499313B2 (en) * 2006-06-02 2009-03-03 Honeywell International Inc. Nonvolatile memory with data clearing functionality
US7486537B2 (en) * 2006-07-31 2009-02-03 Sandisk 3D Llc Method for using a mixed-use memory array with different data states
JP4864760B2 (ja) 2007-02-15 2012-02-01 株式会社東芝 半導体記憶装置及びそのデータ書き込み／読み出し方法
US7539047B2 (en) * 2007-05-08 2009-05-26 Honeywell International, Inc. MRAM cell with multiple storage elements
RU2367057C2 (ru) * 2007-10-31 2009-09-10 Государственное образовательное учреждение высшего профессионального образования "Московский Инженерно-Физический Институт (государственный университет)" Способ формирования структур магнитных туннельных переходов для магниторезистивной магнитной памяти произвольного доступа и структура магнитного туннельного перехода для магниторезистивной магнитной памяти произвольного доступа (варианты)
US7577021B2 (en) * 2007-11-21 2009-08-18 Magic Technologies, Inc. Spin transfer MRAM device with separated CPP assisted writing
US7995378B2 (en) * 2007-12-19 2011-08-09 Qualcomm Incorporated MRAM device with shared source line
US8125040B2 (en) 2008-04-18 2012-02-28 Qualcomm Incorporated Two mask MTJ integration for STT MRAM
US7902878B2 (en) * 2008-04-29 2011-03-08 Qualcomm Incorporated Clock gating system and method
US7894248B2 (en) 2008-09-12 2011-02-22 Grandis Inc. Programmable and redundant circuitry based on magnetic tunnel junction (MTJ)
US7859891B2 (en) * 2008-09-30 2010-12-28 Seagate Technology Llc Static source plane in stram
CA2690237C (en) * 2009-02-06 2011-03-15 Sidense Corp. High reliability otp memory
JP2010225259A (ja) * 2009-02-27 2010-10-07 Renesas Electronics Corp 半導体装置
US8547736B2 (en) * 2010-08-03 2013-10-01 Qualcomm Incorporated Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction
US9165631B2 (en) * 2012-09-13 2015-10-20 Qualcomm Incorporated OTP scheme with multiple magnetic tunnel junction devices in a cell

Also Published As

Publication number Publication date
SG187688A1 (en) 2013-03-28
EP2601655B1 (en) 2019-01-02
ES2718487T3 (es) 2019-07-02
HUE043517T2 (hu) 2019-08-28
AR082475A1 (es) 2012-12-12
CA2807392C (en) 2014-12-16
BR112013002528A2 (pt) 2016-05-31
TWI467575B (zh) 2015-01-01
US20140010006A1 (en) 2014-01-09
US8547736B2 (en) 2013-10-01
BR112013002528B1 (pt) 2020-12-22
CA2807392A1 (en) 2012-02-09
CN103081020A (zh) 2013-05-01
KR101445989B1 (ko) 2014-09-29
TW201511018A (zh) 2015-03-16
TWI553647B (zh) 2016-10-11
EP2601655A2 (en) 2013-06-12
RU2553087C2 (ru) 2015-06-10
JP2013537679A (ja) 2013-10-03
US8797792B2 (en) 2014-08-05
WO2012018918A3 (en) 2012-05-31
CN103081020B (zh) 2016-06-29
KR20130036771A (ko) 2013-04-12
AU2011285791A1 (en) 2013-02-28
JP5670570B2 (ja) 2015-02-18
US20120033490A1 (en) 2012-02-09
RU2013109271A (ru) 2014-09-10
JP2015092430A (ja) 2015-05-14
WO2012018918A2 (en) 2012-02-09
TW201214436A (en) 2012-04-01
IN2013MN00318A (zh) 2015-05-29

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PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20200730