IN2013MN00318A - - Google Patents

Info

Publication number
IN2013MN00318A
IN2013MN00318A IN318MUN2013A IN2013MN00318A IN 2013MN00318 A IN2013MN00318 A IN 2013MN00318A IN 318MUN2013 A IN318MUN2013 A IN 318MUN2013A IN 2013MN00318 A IN2013MN00318 A IN 2013MN00318A
Authority
IN
India
Prior art keywords
mtj
bitcell
applying
program voltage
reversible state
Prior art date
Application number
Inventor
Hari M Rao
Jung Pill Kim
Seung H Kang
Xiaochun Zhu
Tae Hyun Kim
Kangho Lee
Xia Li
Wah Nam Hsu
Wuyang Hao
Jungwon Suh
Nicholas K Yu
Matthew Michael Nowak
Steven M Millendorf
Asaf Ashkenazi
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of IN2013MN00318A publication Critical patent/IN2013MN00318A/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/06—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using diode elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1655—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/02—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using magnetic or inductive elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/027—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in fuses

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)

Abstract

A method of generating a non reversible state at a bitcell having a first magnetic tunnel junction (MTJ) and a second MTJ includes applying a program voltage to the first MTJ of the bitcell without applying the program voltage to the second MTJ of the bitcell. A memory device (102) includes a bitcell having a first MTJ (106) and a second MTJ (108) and programming circitry (104) configured to generate a non reversible state at the bitcell by applying a program signal to a selected one of the first MTJ and the second MTJ of the bitcell.
IN318MUN2013 2010-08-03 2011-08-03 IN2013MN00318A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/849,043 US8547736B2 (en) 2010-08-03 2010-08-03 Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction
PCT/US2011/046429 WO2012018918A2 (en) 2010-08-03 2011-08-03 Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction

Publications (1)

Publication Number Publication Date
IN2013MN00318A true IN2013MN00318A (en) 2015-05-29

Family

ID=44583401

Family Applications (1)

Application Number Title Priority Date Filing Date
IN318MUN2013 IN2013MN00318A (en) 2010-08-03 2011-08-03

Country Status (17)

Country Link
US (2) US8547736B2 (en)
EP (1) EP2601655B1 (en)
JP (2) JP5670570B2 (en)
KR (1) KR101445989B1 (en)
CN (1) CN103081020B (en)
AR (1) AR082475A1 (en)
AU (1) AU2011285791A1 (en)
BR (1) BR112013002528B1 (en)
CA (1) CA2807392C (en)
ES (1) ES2718487T3 (en)
HK (1) HK1181916A1 (en)
HU (1) HUE043517T2 (en)
IN (1) IN2013MN00318A (en)
RU (1) RU2553087C2 (en)
SG (1) SG187688A1 (en)
TW (2) TWI553647B (en)
WO (1) WO2012018918A2 (en)

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US9165631B2 (en) * 2012-09-13 2015-10-20 Qualcomm Incorporated OTP scheme with multiple magnetic tunnel junction devices in a cell
US9262259B2 (en) 2013-01-14 2016-02-16 Qualcomm Incorporated One-time programmable integrated circuit security
US9183082B2 (en) * 2013-01-29 2015-11-10 Qualcomm Incorporated Error detection and correction of one-time programmable elements
US9105310B2 (en) * 2013-02-05 2015-08-11 Qualcomm Incorporated System and method of programming a memory cell
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US9330747B2 (en) * 2013-05-14 2016-05-03 Intel Corporation Non-volatile latch using spin-transfer torque memory device
US9298946B2 (en) * 2013-09-09 2016-03-29 Qualcomm Incorporated Physically unclonable function based on breakdown voltage of metal-insulator-metal device
US9495899B2 (en) * 2013-09-25 2016-11-15 Qualcomm Incorporated Contactless data communication using in-plane magnetic fields, and related systems and methods
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US9715916B1 (en) * 2016-03-24 2017-07-25 Intel Corporation Supply-switched dual cell memory bitcell
US10742338B2 (en) * 2018-01-26 2020-08-11 Clip Interactive, Llc Seamless integration of radio broadcast audio with streaming audio
US10855287B2 (en) 2018-02-20 2020-12-01 United States Of America, As Represented By The Secretary Of The Navy Non-volatile multiple time programmable integrated circuit system with selective conversion to one time programmable or permanent configuration bit programming capabilities and related methods
US10665281B1 (en) * 2019-02-27 2020-05-26 Globalfoundries Inc. Resistive nonvolatile memory cells with shared access transistors
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Also Published As

Publication number Publication date
BR112013002528A2 (en) 2016-05-31
TWI467575B (en) 2015-01-01
SG187688A1 (en) 2013-03-28
JP5670570B2 (en) 2015-02-18
EP2601655B1 (en) 2019-01-02
CN103081020B (en) 2016-06-29
KR20130036771A (en) 2013-04-12
BR112013002528B1 (en) 2020-12-22
WO2012018918A2 (en) 2012-02-09
JP2015092430A (en) 2015-05-14
EP2601655A2 (en) 2013-06-12
RU2013109271A (en) 2014-09-10
US20140010006A1 (en) 2014-01-09
US8797792B2 (en) 2014-08-05
WO2012018918A3 (en) 2012-05-31
TW201214436A (en) 2012-04-01
AU2011285791A1 (en) 2013-02-28
CA2807392C (en) 2014-12-16
HUE043517T2 (en) 2019-08-28
CN103081020A (en) 2013-05-01
AR082475A1 (en) 2012-12-12
KR101445989B1 (en) 2014-09-29
ES2718487T3 (en) 2019-07-02
HK1181916A1 (en) 2013-11-15
TW201511018A (en) 2015-03-16
US20120033490A1 (en) 2012-02-09
RU2553087C2 (en) 2015-06-10
JP2013537679A (en) 2013-10-03
TWI553647B (en) 2016-10-11
US8547736B2 (en) 2013-10-01
CA2807392A1 (en) 2012-02-09

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