IN2013MN00318A - - Google Patents
Info
- Publication number
- IN2013MN00318A IN2013MN00318A IN318MUN2013A IN2013MN00318A IN 2013MN00318 A IN2013MN00318 A IN 2013MN00318A IN 318MUN2013 A IN318MUN2013 A IN 318MUN2013A IN 2013MN00318 A IN2013MN00318 A IN 2013MN00318A
- Authority
- IN
- India
- Prior art keywords
- mtj
- bitcell
- applying
- program voltage
- reversible state
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/06—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using diode elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1655—Bit-line or column circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/02—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using magnetic or inductive elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/027—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in fuses
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Semiconductor Memories (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/849,043 US8547736B2 (en) | 2010-08-03 | 2010-08-03 | Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction |
PCT/US2011/046429 WO2012018918A2 (en) | 2010-08-03 | 2011-08-03 | Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2013MN00318A true IN2013MN00318A (ja) | 2015-05-29 |
Family
ID=44583401
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN318MUN2013 IN2013MN00318A (ja) | 2010-08-03 | 2011-08-03 |
Country Status (17)
Country | Link |
---|---|
US (2) | US8547736B2 (ja) |
EP (1) | EP2601655B1 (ja) |
JP (2) | JP5670570B2 (ja) |
KR (1) | KR101445989B1 (ja) |
CN (1) | CN103081020B (ja) |
AR (1) | AR082475A1 (ja) |
AU (1) | AU2011285791A1 (ja) |
BR (1) | BR112013002528B1 (ja) |
CA (1) | CA2807392C (ja) |
ES (1) | ES2718487T3 (ja) |
HK (1) | HK1181916A1 (ja) |
HU (1) | HUE043517T2 (ja) |
IN (1) | IN2013MN00318A (ja) |
RU (1) | RU2553087C2 (ja) |
SG (1) | SG187688A1 (ja) |
TW (2) | TWI467575B (ja) |
WO (1) | WO2012018918A2 (ja) |
Families Citing this family (28)
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US9084276B2 (en) * | 2009-09-11 | 2015-07-14 | Aerovironment, Inc. | Dynamic transmission control for a wireless network |
US8547736B2 (en) * | 2010-08-03 | 2013-10-01 | Qualcomm Incorporated | Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction |
US9135978B2 (en) | 2012-07-11 | 2015-09-15 | Micron Technology, Inc. | Memory programming methods and memory systems |
US8923044B2 (en) * | 2012-08-20 | 2014-12-30 | Qualcomm Incorporated | MTP MTJ device |
US9165631B2 (en) * | 2012-09-13 | 2015-10-20 | Qualcomm Incorporated | OTP scheme with multiple magnetic tunnel junction devices in a cell |
US9262259B2 (en) | 2013-01-14 | 2016-02-16 | Qualcomm Incorporated | One-time programmable integrated circuit security |
US9183082B2 (en) * | 2013-01-29 | 2015-11-10 | Qualcomm Incorporated | Error detection and correction of one-time programmable elements |
US9105310B2 (en) * | 2013-02-05 | 2015-08-11 | Qualcomm Incorporated | System and method of programming a memory cell |
US9218509B2 (en) | 2013-02-08 | 2015-12-22 | Everspin Technologies, Inc. | Response to tamper detection in a memory device |
US9135970B2 (en) | 2013-02-08 | 2015-09-15 | Everspin Technologies, Inc. | Tamper detection and response in a memory device |
US9293196B2 (en) | 2013-03-15 | 2016-03-22 | Micron Technology, Inc. | Memory cells, memory systems, and memory programming methods |
US9330747B2 (en) * | 2013-05-14 | 2016-05-03 | Intel Corporation | Non-volatile latch using spin-transfer torque memory device |
US9298946B2 (en) * | 2013-09-09 | 2016-03-29 | Qualcomm Incorporated | Physically unclonable function based on breakdown voltage of metal-insulator-metal device |
US9495899B2 (en) * | 2013-09-25 | 2016-11-15 | Qualcomm Incorporated | Contactless data communication using in-plane magnetic fields, and related systems and methods |
WO2015116144A1 (en) * | 2014-01-31 | 2015-08-06 | Hewlett-Packard Development Company, L.P. | Resistive ratio-based memory cell |
KR102235043B1 (ko) | 2014-06-09 | 2021-04-05 | 삼성전자주식회사 | 반도체 메모리 장치 |
KR20160122478A (ko) * | 2015-04-14 | 2016-10-24 | 에스케이하이닉스 주식회사 | 전자 장치 |
US9548118B1 (en) * | 2015-09-22 | 2017-01-17 | Arm Ltd. | Method, system and device for complementary non-volatile memory device operation |
US10311928B2 (en) | 2015-10-15 | 2019-06-04 | Samsung Electronics Co., Ltd. | Semiconductor devices including reversible and one-time programmable magnetic tunnel junctions |
KR102398177B1 (ko) * | 2015-10-15 | 2022-05-18 | 삼성전자주식회사 | 자기 메모리 장치 |
US9614144B1 (en) | 2015-12-21 | 2017-04-04 | International Business Machines Corporation | Otp mram |
US9715916B1 (en) | 2016-03-24 | 2017-07-25 | Intel Corporation | Supply-switched dual cell memory bitcell |
US10742338B2 (en) * | 2018-01-26 | 2020-08-11 | Clip Interactive, Llc | Seamless integration of radio broadcast audio with streaming audio |
US10855287B2 (en) | 2018-02-20 | 2020-12-01 | United States Of America, As Represented By The Secretary Of The Navy | Non-volatile multiple time programmable integrated circuit system with selective conversion to one time programmable or permanent configuration bit programming capabilities and related methods |
US10665281B1 (en) * | 2019-02-27 | 2020-05-26 | Globalfoundries Inc. | Resistive nonvolatile memory cells with shared access transistors |
DE112020001247T5 (de) * | 2019-03-15 | 2021-12-09 | Sony Semiconductor Solutions Corporation | Halbleiterschaltung und elektronische vorrichtung |
US11264991B2 (en) | 2019-11-26 | 2022-03-01 | The Trustees Of Indiana University | Field-programmable gate array with updatable security schemes |
US20230267982A1 (en) * | 2022-02-24 | 2023-08-24 | Everspin Technologies, Inc. | Low resistance mtj antifuse circuitry designs and methods of operation |
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JPH08123717A (ja) * | 1994-10-25 | 1996-05-17 | Oki Electric Ind Co Ltd | 半導体記憶装置 |
US6272041B1 (en) * | 2000-08-28 | 2001-08-07 | Motorola, Inc. | MTJ MRAM parallel-parallel architecture |
US6324093B1 (en) * | 2000-09-15 | 2001-11-27 | Hewlett-Packard Company | Write-once thin-film memory |
JP3768143B2 (ja) * | 2000-11-09 | 2006-04-19 | 三洋電機株式会社 | 磁気メモリ装置 |
TW584976B (en) * | 2000-11-09 | 2004-04-21 | Sanyo Electric Co | Magnetic memory device |
JP3920564B2 (ja) * | 2000-12-25 | 2007-05-30 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
JP2002230965A (ja) * | 2001-01-24 | 2002-08-16 | Internatl Business Mach Corp <Ibm> | 不揮発性メモリ装置 |
US6490217B1 (en) * | 2001-05-23 | 2002-12-03 | International Business Machines Corporation | Select line architecture for magnetic random access memories |
JP4073690B2 (ja) | 2001-11-14 | 2008-04-09 | 株式会社ルネサステクノロジ | 薄膜磁性体記憶装置 |
US6801471B2 (en) * | 2002-02-19 | 2004-10-05 | Infineon Technologies Ag | Fuse concept and method of operation |
US6751149B2 (en) | 2002-03-22 | 2004-06-15 | Micron Technology, Inc. | Magnetic tunneling junction antifuse device |
JP3808799B2 (ja) | 2002-05-15 | 2006-08-16 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
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KR100923298B1 (ko) * | 2003-01-18 | 2009-10-23 | 삼성전자주식회사 | 단위 셀이 한 개의 트랜지스터와 두 개의 mtj로 구성된mram 및 그 제조방법 |
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JP4334284B2 (ja) * | 2003-06-26 | 2009-09-30 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
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JP2005235244A (ja) * | 2004-02-17 | 2005-09-02 | Renesas Technology Corp | 半導体記憶装置 |
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US7539047B2 (en) * | 2007-05-08 | 2009-05-26 | Honeywell International, Inc. | MRAM cell with multiple storage elements |
RU2367057C2 (ru) * | 2007-10-31 | 2009-09-10 | Государственное образовательное учреждение высшего профессионального образования "Московский Инженерно-Физический Институт (государственный университет)" | Способ формирования структур магнитных туннельных переходов для магниторезистивной магнитной памяти произвольного доступа и структура магнитного туннельного перехода для магниторезистивной магнитной памяти произвольного доступа (варианты) |
US7577021B2 (en) * | 2007-11-21 | 2009-08-18 | Magic Technologies, Inc. | Spin transfer MRAM device with separated CPP assisted writing |
US7995378B2 (en) * | 2007-12-19 | 2011-08-09 | Qualcomm Incorporated | MRAM device with shared source line |
US8125040B2 (en) | 2008-04-18 | 2012-02-28 | Qualcomm Incorporated | Two mask MTJ integration for STT MRAM |
US7902878B2 (en) * | 2008-04-29 | 2011-03-08 | Qualcomm Incorporated | Clock gating system and method |
US7894248B2 (en) | 2008-09-12 | 2011-02-22 | Grandis Inc. | Programmable and redundant circuitry based on magnetic tunnel junction (MTJ) |
US7859891B2 (en) * | 2008-09-30 | 2010-12-28 | Seagate Technology Llc | Static source plane in stram |
US8213211B2 (en) * | 2009-02-06 | 2012-07-03 | Sidense Corp. | High reliability OTP memory |
JP2010225259A (ja) * | 2009-02-27 | 2010-10-07 | Renesas Electronics Corp | 半導体装置 |
US8547736B2 (en) * | 2010-08-03 | 2013-10-01 | Qualcomm Incorporated | Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction |
US9165631B2 (en) * | 2012-09-13 | 2015-10-20 | Qualcomm Incorporated | OTP scheme with multiple magnetic tunnel junction devices in a cell |
-
2010
- 2010-08-03 US US12/849,043 patent/US8547736B2/en active Active
-
2011
- 2011-08-03 HU HUE11752672A patent/HUE043517T2/hu unknown
- 2011-08-03 WO PCT/US2011/046429 patent/WO2012018918A2/en active Application Filing
- 2011-08-03 CN CN201180042714.3A patent/CN103081020B/zh active Active
- 2011-08-03 JP JP2013523306A patent/JP5670570B2/ja not_active Expired - Fee Related
- 2011-08-03 AU AU2011285791A patent/AU2011285791A1/en not_active Abandoned
- 2011-08-03 SG SG2013008131A patent/SG187688A1/en unknown
- 2011-08-03 TW TW100127675A patent/TWI467575B/zh active
- 2011-08-03 EP EP11752672.3A patent/EP2601655B1/en active Active
- 2011-08-03 KR KR1020137005421A patent/KR101445989B1/ko active IP Right Grant
- 2011-08-03 CA CA2807392A patent/CA2807392C/en not_active Expired - Fee Related
- 2011-08-03 AR ARP110102812A patent/AR082475A1/es not_active Application Discontinuation
- 2011-08-03 TW TW103141666A patent/TWI553647B/zh active
- 2011-08-03 ES ES11752672T patent/ES2718487T3/es active Active
- 2011-08-03 IN IN318MUN2013 patent/IN2013MN00318A/en unknown
- 2011-08-03 BR BR112013002528-0A patent/BR112013002528B1/pt active IP Right Grant
- 2011-08-03 RU RU2013109271/08A patent/RU2553087C2/ru not_active IP Right Cessation
-
2013
- 2013-08-02 HK HK13109043.3A patent/HK1181916A1/zh not_active IP Right Cessation
- 2013-09-10 US US14/022,364 patent/US8797792B2/en active Active
-
2014
- 2014-12-17 JP JP2014254895A patent/JP2015092430A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
TW201511018A (zh) | 2015-03-16 |
US8547736B2 (en) | 2013-10-01 |
EP2601655A2 (en) | 2013-06-12 |
TWI553647B (zh) | 2016-10-11 |
SG187688A1 (en) | 2013-03-28 |
BR112013002528B1 (pt) | 2020-12-22 |
CN103081020B (zh) | 2016-06-29 |
TW201214436A (en) | 2012-04-01 |
US20140010006A1 (en) | 2014-01-09 |
BR112013002528A2 (pt) | 2016-05-31 |
EP2601655B1 (en) | 2019-01-02 |
US8797792B2 (en) | 2014-08-05 |
AU2011285791A1 (en) | 2013-02-28 |
HUE043517T2 (hu) | 2019-08-28 |
CN103081020A (zh) | 2013-05-01 |
WO2012018918A2 (en) | 2012-02-09 |
AR082475A1 (es) | 2012-12-12 |
ES2718487T3 (es) | 2019-07-02 |
US20120033490A1 (en) | 2012-02-09 |
WO2012018918A3 (en) | 2012-05-31 |
TWI467575B (zh) | 2015-01-01 |
JP5670570B2 (ja) | 2015-02-18 |
CA2807392C (en) | 2014-12-16 |
KR20130036771A (ko) | 2013-04-12 |
JP2013537679A (ja) | 2013-10-03 |
HK1181916A1 (zh) | 2013-11-15 |
CA2807392A1 (en) | 2012-02-09 |
RU2013109271A (ru) | 2014-09-10 |
JP2015092430A (ja) | 2015-05-14 |
KR101445989B1 (ko) | 2014-09-29 |
RU2553087C2 (ru) | 2015-06-10 |
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