ES2395697T8 - Celda de memoria y procedimiento de formación de una unión de túnel magnético (MTJ) de una celda de memoria - Google Patents

Celda de memoria y procedimiento de formación de una unión de túnel magnético (MTJ) de una celda de memoria Download PDF

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Publication number
ES2395697T8
ES2395697T8 ES09700850.2T ES09700850T ES2395697T8 ES 2395697 T8 ES2395697 T8 ES 2395697T8 ES 09700850 T ES09700850 T ES 09700850T ES 2395697 T8 ES2395697 T8 ES 2395697T8
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ES
Spain
Prior art keywords
memory cell
mtj
procedure
forming
tunnel junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
ES09700850.2T
Other languages
English (en)
Other versions
ES2395697T3 (es
Inventor
Shiqun Gu
Seung H. Kang
Matthew M. Nowak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Application granted granted Critical
Publication of ES2395697T3 publication Critical patent/ES2395697T3/es
Publication of ES2395697T8 publication Critical patent/ES2395697T8/es
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B61/00Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00Galvanomagnetic devices
    • H10N50/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00Galvanomagnetic devices
    • H10N50/10Magnetoresistive devices
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/902Specified use of nanostructure
    • Y10S977/932Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/933Spintronics or quantum computing
    • Y10S977/935Spin dependent tunnel, SDT, junction, e.g. tunneling magnetoresistance, TMR

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
ES09700850T 2008-01-08 2009-01-08 Celda de memoria y procedimiento de formación de una unión de túnel magnético (MTJ) de una celda de memoria Active ES2395697T3 (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US970557 2008-01-08
US11/970,557 US7919794B2 (en) 2008-01-08 2008-01-08 Memory cell and method of forming a magnetic tunnel junction (MTJ) of a memory cell
PCT/US2009/030451 WO2009089360A1 (en) 2008-01-08 2009-01-08 Memory cell and method of forming a magnetic tunnel junction (mtj) of a memory cell

Publications (2)

Publication Number Publication Date
ES2395697T3 ES2395697T3 (es) 2013-02-14
ES2395697T8 true ES2395697T8 (es) 2014-11-17

Family

ID=40580629

Family Applications (1)

Application Number Title Priority Date Filing Date
ES09700850T Active ES2395697T3 (es) 2008-01-08 2009-01-08 Celda de memoria y procedimiento de formación de una unión de túnel magnético (MTJ) de una celda de memoria

Country Status (10)

Country Link
US (1) US7919794B2 (es)
EP (1) EP2240969B1 (es)
JP (2) JP5642557B2 (es)
KR (1) KR101148395B1 (es)
CN (1) CN101911326B (es)
BR (1) BRPI0907208B1 (es)
CA (1) CA2711305C (es)
ES (1) ES2395697T3 (es)
RU (1) RU2469441C2 (es)
WO (1) WO2009089360A1 (es)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8634231B2 (en) 2009-08-24 2014-01-21 Qualcomm Incorporated Magnetic tunnel junction structure
US8107285B2 (en) * 2010-01-08 2012-01-31 International Business Machines Corporation Read direction for spin-torque based memory device
US9385308B2 (en) * 2010-03-26 2016-07-05 Qualcomm Incorporated Perpendicular magnetic tunnel junction structure
CN102569642B (zh) * 2010-12-07 2016-08-03 三星电子株式会社 存储节点、包括该存储节点的磁存储器件及其制造方法
US9082956B2 (en) 2011-04-04 2015-07-14 Micron Technology, Inc. Confined cell structures and methods of forming confined cell structures
US9082695B2 (en) 2011-06-06 2015-07-14 Avalanche Technology, Inc. Vialess memory structure and method of manufacturing same
US8928100B2 (en) 2011-06-24 2015-01-06 International Business Machines Corporation Spin transfer torque cell for magnetic random access memory
US8709956B2 (en) 2011-08-01 2014-04-29 Avalanche Technology Inc. MRAM with sidewall protection and method of fabrication
US8796795B2 (en) 2011-08-01 2014-08-05 Avalanche Technology Inc. MRAM with sidewall protection and method of fabrication
US8536063B2 (en) 2011-08-30 2013-09-17 Avalanche Technology Inc. MRAM etching processes
TWI483248B (zh) * 2011-09-08 2015-05-01 Inotera Memories Inc 自旋轉移力矩隨機存取記憶體
CN103066199B (zh) * 2011-10-19 2016-03-30 中芯国际集成电路制造(北京)有限公司 一种新型的磁隧穿结器件及其制造方法
US9007818B2 (en) 2012-03-22 2015-04-14 Micron Technology, Inc. Memory cells, semiconductor device structures, systems including such cells, and methods of fabrication
US8574928B2 (en) 2012-04-10 2013-11-05 Avalanche Technology Inc. MRAM fabrication method with sidewall cleaning
US8923038B2 (en) 2012-06-19 2014-12-30 Micron Technology, Inc. Memory cells, semiconductor device structures, memory systems, and methods of fabrication
US9054030B2 (en) 2012-06-19 2015-06-09 Micron Technology, Inc. Memory cells, semiconductor device structures, memory systems, and methods of fabrication
US8883520B2 (en) 2012-06-22 2014-11-11 Avalanche Technology, Inc. Redeposition control in MRAM fabrication process
US9373775B2 (en) 2012-09-13 2016-06-21 Micron Technology, Inc. Methods of forming magnetic memory cells
US8767448B2 (en) * 2012-11-05 2014-07-01 International Business Machines Corporation Magnetoresistive random access memory
US9379315B2 (en) 2013-03-12 2016-06-28 Micron Technology, Inc. Memory cells, methods of fabrication, semiconductor device structures, and memory systems
GB2526456B (en) 2013-03-15 2020-07-15 Intel Corp Logic chip including embedded magnetic tunnel junctions
US9240546B2 (en) * 2013-03-26 2016-01-19 Infineon Technologies Ag Magnetoresistive devices and methods for manufacturing magnetoresistive devices
US9368714B2 (en) 2013-07-01 2016-06-14 Micron Technology, Inc. Memory cells, methods of operation and fabrication, semiconductor device structures, and memory systems
US9466787B2 (en) 2013-07-23 2016-10-11 Micron Technology, Inc. Memory cells, methods of fabrication, semiconductor device structures, memory systems, and electronic systems
US9461242B2 (en) 2013-09-13 2016-10-04 Micron Technology, Inc. Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems
US9608197B2 (en) 2013-09-18 2017-03-28 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
US10454024B2 (en) 2014-02-28 2019-10-22 Micron Technology, Inc. Memory cells, methods of fabrication, and memory devices
US9281466B2 (en) 2014-04-09 2016-03-08 Micron Technology, Inc. Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication
US9269888B2 (en) 2014-04-18 2016-02-23 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
US9349945B2 (en) 2014-10-16 2016-05-24 Micron Technology, Inc. Memory cells, semiconductor devices, and methods of fabrication
US9768377B2 (en) 2014-12-02 2017-09-19 Micron Technology, Inc. Magnetic cell structures, and methods of fabrication
US9853208B2 (en) 2014-12-30 2017-12-26 International Business Machines Corporation In-situ annealing to improve the tunneling magneto-resistance of magnetic tunnel junctions
US10439131B2 (en) 2015-01-15 2019-10-08 Micron Technology, Inc. Methods of forming semiconductor devices including tunnel barrier materials
US9324937B1 (en) 2015-03-24 2016-04-26 International Business Machines Corporation Thermally assisted MRAM including magnetic tunnel junction and vacuum cavity
KR102485297B1 (ko) 2015-12-11 2023-01-05 삼성전자주식회사 자기 저항 메모리 소자 및 그 제조 방법
US9972771B2 (en) * 2016-03-24 2018-05-15 Taiwan Semiconductor Manufacturing Co., Ltd. MRAM devices and methods of forming the same
CN106229004B (zh) * 2016-07-11 2018-08-28 北京航空航天大学 一种光写入的非易失性磁存储器
WO2018125038A1 (en) * 2016-12-27 2018-07-05 Intel Corporation Monolithic integrated circuits with multiple types of embedded non-volatile memory devices
WO2019237308A1 (zh) * 2018-06-14 2019-12-19 华为技术有限公司 存储器
CN109521996B (zh) * 2018-11-16 2021-08-24 武汉华芯纳磁科技有限公司 基于电子自旋的多态真随机数发生器
US11195993B2 (en) * 2019-09-16 2021-12-07 International Business Machines Corporation Encapsulation topography-assisted self-aligned MRAM top contact
US20220359611A1 (en) * 2021-05-06 2022-11-10 Qualcomm Incorporated One transistor one magnetic tunnel junction multiple bit magnetoresistive random access memory cell

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU1522285A1 (ru) * 1986-09-22 1989-11-15 Ташкентский институт инженеров ирригации и механизации сельского хозяйства Элемент пам ти
JP3854767B2 (ja) * 1999-12-13 2006-12-06 ローム株式会社 強磁性トンネル接合素子を用いた装置、およびその製造方法
FR2817999B1 (fr) * 2000-12-07 2003-01-10 Commissariat Energie Atomique Dispositif magnetique a polarisation de spin et a empilement(s) tri-couche(s) et memoire utilisant ce dispositif
JP4488645B2 (ja) * 2001-04-20 2010-06-23 株式会社東芝 磁気記憶装置
JP2003133529A (ja) 2001-10-24 2003-05-09 Sony Corp 情報記憶装置およびその製造方法
JP2003174149A (ja) 2001-12-07 2003-06-20 Mitsubishi Electric Corp 磁気抵抗記憶素子および磁気ランダムアクセスメモリ装置
US6667525B2 (en) * 2002-03-04 2003-12-23 Samsung Electronics Co., Ltd. Semiconductor device having hetero grain stack gate
JP3884312B2 (ja) * 2002-03-28 2007-02-21 株式会社東芝 磁気記憶装置
US6621730B1 (en) * 2002-08-27 2003-09-16 Motorola, Inc. Magnetic random access memory having a vertical write line
JP3884399B2 (ja) * 2003-05-21 2007-02-21 株式会社東芝 磁気記憶装置
JP2006148039A (ja) * 2004-03-03 2006-06-08 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
KR100604913B1 (ko) * 2004-10-28 2006-07-28 삼성전자주식회사 멀티 비트 셀 어레이 구조를 가지는 마그네틱 램
US7105903B2 (en) * 2004-11-18 2006-09-12 Freescale Semiconductor, Inc. Methods and structures for electrical communication with an overlying electrode for a semiconductor element
JP2007157823A (ja) * 2005-12-01 2007-06-21 Renesas Technology Corp 磁気記憶装置
JP2007266498A (ja) * 2006-03-29 2007-10-11 Toshiba Corp 磁気記録素子及び磁気メモリ
US20070246787A1 (en) * 2006-03-29 2007-10-25 Lien-Chang Wang On-plug magnetic tunnel junction devices based on spin torque transfer switching
CN100550456C (zh) * 2006-05-26 2009-10-14 中国科学院物理研究所 一种具有量子效应的MgO双势垒磁性隧道结及其用途

Also Published As

Publication number Publication date
US20090174015A1 (en) 2009-07-09
BRPI0907208A2 (pt) 2015-07-14
JP2011509532A (ja) 2011-03-24
JP5642557B2 (ja) 2014-12-17
US7919794B2 (en) 2011-04-05
ES2395697T3 (es) 2013-02-14
RU2469441C2 (ru) 2012-12-10
CN101911326B (zh) 2013-04-10
EP2240969B1 (en) 2012-10-17
KR20100096283A (ko) 2010-09-01
EP2240969A1 (en) 2010-10-20
KR101148395B1 (ko) 2012-05-21
CN101911326A (zh) 2010-12-08
RU2010133158A (ru) 2012-02-20
BRPI0907208B1 (pt) 2019-05-07
CA2711305C (en) 2015-02-10
WO2009089360A1 (en) 2009-07-16
CA2711305A1 (en) 2009-07-16
JP2015029119A (ja) 2015-02-12

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