CN103038311B - 含水碱性蚀刻和清洁组合物以及处理硅基材表面的方法 - Google Patents

含水碱性蚀刻和清洁组合物以及处理硅基材表面的方法 Download PDF

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Publication number
CN103038311B
CN103038311B CN201180037424.XA CN201180037424A CN103038311B CN 103038311 B CN103038311 B CN 103038311B CN 201180037424 A CN201180037424 A CN 201180037424A CN 103038311 B CN103038311 B CN 103038311B
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silicon substrate
water
soluble
phosphorus
general formula
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Expired - Fee Related
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Chinese (zh)
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CN103038311A (zh
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B·费斯提尔
S·布劳恩
A·费森贝克尔
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BASF SE
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BASF SE
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/36—Organic compounds containing phosphorus
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)
  • Detergent Compositions (AREA)
  • General Chemical & Material Sciences (AREA)
CN201180037424.XA 2010-06-09 2011-06-01 含水碱性蚀刻和清洁组合物以及处理硅基材表面的方法 Expired - Fee Related CN103038311B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US35283110P 2010-06-09 2010-06-09
US61/352,831 2010-06-09
PCT/IB2011/052418 WO2011154875A1 (en) 2010-06-09 2011-06-01 Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates

Publications (2)

Publication Number Publication Date
CN103038311A CN103038311A (zh) 2013-04-10
CN103038311B true CN103038311B (zh) 2015-10-07

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Country Status (11)

Country Link
US (1) US9076920B2 (https=)
EP (1) EP2580303B1 (https=)
JP (1) JP2013534547A (https=)
KR (1) KR101894603B1 (https=)
CN (1) CN103038311B (https=)
ES (1) ES2699223T3 (https=)
MY (1) MY160091A (https=)
PH (1) PH12012502385A1 (https=)
SG (1) SG186108A1 (https=)
TW (1) TWI498421B (https=)
WO (1) WO2011154875A1 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120295447A1 (en) * 2010-11-24 2012-11-22 Air Products And Chemicals, Inc. Compositions and Methods for Texturing of Silicon Wafers
WO2013021296A1 (en) * 2011-08-09 2013-02-14 Basf Se Aqueous alkaline compositions and method for treating the surface of silicon substrates
CN102751384A (zh) * 2012-07-07 2012-10-24 蚌埠玻璃工业设计研究院 一种晶体硅表面织构方法
WO2014024414A1 (ja) * 2012-08-10 2014-02-13 第一工業製薬株式会社 テクスチャー形成用エッチング液およびそれを用いたテクスチャー形成方法
KR102118964B1 (ko) * 2012-12-05 2020-06-08 엔테그리스, 아이엔씨. Iii-v 반도체 물질을 세척하기 위한 조성물 및 이를 사용하는 방법
WO2015007630A1 (en) * 2013-07-16 2015-01-22 Akzo Nobel Chemicals International B.V. New salts, crystals, complexes, and derivatives of threonine diacetic acid, a process to prepare threonine diacetic acid, and the use thereof
US20160200571A1 (en) * 2013-09-05 2016-07-14 Kit Co, Ltd. Hydrogen production apparatus, hydrogen production method, silicon fine particles for hydrogen production, and production method for silicon fine particles for hydrogen production
JP2015189829A (ja) * 2014-03-27 2015-11-02 株式会社フジミインコーポレーテッド 研磨用組成物
JP6373029B2 (ja) * 2014-03-27 2018-08-15 株式会社フジミインコーポレーテッド 研磨用組成物
DE102014206675A1 (de) * 2014-04-07 2015-10-08 Gebr. Schmid Gmbh Verfahren und Lösung zur Herstellung und Nachbehandlung von Wafern
JP6417612B2 (ja) * 2014-12-01 2018-11-07 メック株式会社 エッチング剤およびその補給液、マグネシウム部品の表面粗化方法、ならびにマグネシウム−樹脂複合体の製造方法
KR101765212B1 (ko) 2015-07-17 2017-08-04 주식회사 위즈켐 천연계 태양광 웨이퍼 세정제 조성물
KR102457249B1 (ko) * 2015-09-18 2022-10-21 주식회사 이엔에프테크놀로지 식각 조성물
CN105118898A (zh) * 2015-09-23 2015-12-02 中利腾晖光伏科技有限公司 一种硅片表面钝化方法及基于其的n型双面电池的制作方法
TWI675905B (zh) * 2015-11-14 2019-11-01 日商東京威力科創股份有限公司 使用稀釋的氫氧化四甲基銨處理微電子基板的方法
CN107164109A (zh) * 2017-03-31 2017-09-15 吴江创源新材料科技有限公司 一种蓝宝石晶片退火前清洗液及其制备方法和清洗工艺
KR102756186B1 (ko) 2020-02-05 2025-01-17 삼성전자주식회사 반도체 패키지 및 패키지-온-패키지의 제조 방법
CN112689886B (zh) * 2020-06-16 2022-11-18 福建晶安光电有限公司 一种衬底加工方法及半导体器件制造方法
CN119286525B (zh) * 2024-12-10 2025-06-24 嘉兴市小辰光伏科技有限公司 一种用于解决TOPCon电池LPCVD双插正面绕扩印的添加剂及清洗工艺

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1546627A (zh) * 2003-12-16 2004-11-17 上海华虹（集团）有限公司 解决湿法剥离氮化硅薄膜新的清洗溶液
JP3893104B2 (ja) * 2002-12-20 2007-03-14 花王株式会社 銅配線半導体基板用ポリマー洗浄剤組成物
WO2008062953A1 (en) * 2006-11-22 2008-05-29 Lg Electronics Inc. Method for manufacturing solar cell and solar cell manufactured by the method
TW200833871A (en) * 2006-11-17 2008-08-16 Sachem Inc Selective metal wet etch composition and process
CN101248516A (zh) * 2005-04-08 2008-08-20 塞克姆公司 金属氮化物的选择性湿蚀刻
WO2009044647A1 (ja) * 2007-10-04 2009-04-09 Mitsubishi Gas Chemical Company, Inc. シリコンエッチング液およびエッチング方法
CN101604615A (zh) * 2008-06-11 2009-12-16 台湾积体电路制造股份有限公司 蚀刻超薄膜的方法及蚀刻液
CN101720352A (zh) * 2007-05-17 2010-06-02 高级技术材料公司 用于cpm后清除配方的新抗氧化剂

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50158281A (https=) 1974-06-10 1975-12-22
GB1573206A (en) 1975-11-26 1980-08-20 Tokyo Shibaura Electric Co Method of trating surfaces of intermediate products obtained in the manufacture of semiconductor devices
FR2372904A1 (fr) 1976-11-19 1978-06-30 Ibm Composition de decapage du silicium polycristallin contenant de l'hydroxyde de tetramethylammonium et procede d'application
JPS6348830A (ja) 1986-08-19 1988-03-01 Toshiba Corp 半導体表面処理方法
JPS63274149A (ja) 1987-05-06 1988-11-11 Mitsubishi Gas Chem Co Inc 半導体処理剤
US5129955A (en) 1989-01-11 1992-07-14 Dainippon Screen Mfg. Co., Ltd. Wafer cleaning method
US5207866A (en) 1991-01-17 1993-05-04 Motorola, Inc. Anisotropic single crystal silicon etching solution and method
US5179414A (en) 1991-01-22 1993-01-12 Compag Computer Corporation Apparatus for developing an image on a photoconductive surface
TW263531B (https=) 1992-03-11 1995-11-21 Mitsubishi Gas Chemical Co
TW274630B (https=) 1994-01-28 1996-04-21 Wako Zunyaku Kogyo Kk
US5466389A (en) 1994-04-20 1995-11-14 J. T. Baker Inc. PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates
US5498293A (en) 1994-06-23 1996-03-12 Mallinckrodt Baker, Inc. Cleaning wafer substrates of metal contamination while maintaining wafer smoothness
US6465403B1 (en) 1998-05-18 2002-10-15 David C. Skee Silicate-containing alkaline compositions for cleaning microelectronic substrates
US6417147B2 (en) 2000-02-29 2002-07-09 Showa Denko K.K. Cleaning agent composition, method for cleaning and use thereof
US6599370B2 (en) 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
PT1664935E (pt) 2003-08-19 2008-01-10 Mallinckrodt Baker Inc Composições de decapagem e limpeza para micro electrónica
BRPI0508291A (pt) * 2004-03-01 2007-07-31 Mallinckrodt Baker Inc composições e processo de limpeza para substratos nanoeletrÈnicas e microeletrÈnicas para limpeza
US8685909B2 (en) 2006-09-21 2014-04-01 Advanced Technology Materials, Inc. Antioxidants for post-CMP cleaning formulations
CN100546627C (zh) * 2007-06-29 2009-10-07 王芬 一种外用祛除黄褐斑的中药面膜
WO2009102004A1 (ja) 2008-02-15 2009-08-20 Lion Corporation 洗浄剤組成物および電子デバイス用基板の洗浄方法
KR101622429B1 (ko) 2008-12-04 2016-05-18 뵈스트알파인 스탈 게엠베하 한면 또는 양면이 아연도금된 강판으로부터 성형체를 제조하는 방법
MY158452A (en) 2009-09-21 2016-10-14 Basf Se Aqueous acidic etching solution and method for texturing the surface of single crystal and polycrystal silicon substrates

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3893104B2 (ja) * 2002-12-20 2007-03-14 花王株式会社 銅配線半導体基板用ポリマー洗浄剤組成物
CN1546627A (zh) * 2003-12-16 2004-11-17 上海华虹（集团）有限公司 解决湿法剥离氮化硅薄膜新的清洗溶液
CN101248516A (zh) * 2005-04-08 2008-08-20 塞克姆公司 金属氮化物的选择性湿蚀刻
TW200833871A (en) * 2006-11-17 2008-08-16 Sachem Inc Selective metal wet etch composition and process
WO2008062953A1 (en) * 2006-11-22 2008-05-29 Lg Electronics Inc. Method for manufacturing solar cell and solar cell manufactured by the method
CN101720352A (zh) * 2007-05-17 2010-06-02 高级技术材料公司 用于cpm后清除配方的新抗氧化剂
WO2009044647A1 (ja) * 2007-10-04 2009-04-09 Mitsubishi Gas Chemical Company, Inc. シリコンエッチング液およびエッチング方法
CN101604615A (zh) * 2008-06-11 2009-12-16 台湾积体电路制造股份有限公司 蚀刻超薄膜的方法及蚀刻液

Also Published As

Publication number Publication date
WO2011154875A1 (en) 2011-12-15
TW201209157A (en) 2012-03-01
KR20130093070A (ko) 2013-08-21
EP2580303A4 (en) 2016-01-06
JP2013534547A (ja) 2013-09-05
PH12012502385A1 (en) 2022-03-21
US20130078756A1 (en) 2013-03-28
EP2580303B1 (en) 2018-08-29
TWI498421B (zh) 2015-09-01
EP2580303A1 (en) 2013-04-17
SG186108A1 (en) 2013-01-30
KR101894603B1 (ko) 2018-09-03
CN103038311A (zh) 2013-04-10
US9076920B2 (en) 2015-07-07
ES2699223T3 (es) 2019-02-08
MY160091A (en) 2017-02-28

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