CN102959742A - 电子装置和用于制造电子装置的方法 - Google Patents

电子装置和用于制造电子装置的方法 Download PDF

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CN102959742A
CN102959742A CN2011800260997A CN201180026099A CN102959742A CN 102959742 A CN102959742 A CN 102959742A CN 2011800260997 A CN2011800260997 A CN 2011800260997A CN 201180026099 A CN201180026099 A CN 201180026099A CN 102959742 A CN102959742 A CN 102959742A
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electronic device
electronic installation
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CN102959742B (zh
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托马斯·贝默尔
西蒙·耶雷比奇
马库斯·平德尔
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Abstract

本发明涉及一种带有支承体（2）的电子装置（1），在所述支承体（2）上设置有至少一个连接面（6）。至少一个电子器件（3a，3b，3c）借助于接触材料（4）固定在连接面（6）上。遮盖面（5）包围在支承体（2）上的连接面（6）。至少一个被覆盖的区域（15，16，17，18，19）由覆盖材料（10）覆盖。所述覆盖材料（10）设计成，使得最小化在遮盖面（5）和被覆盖的区域（15，16，17，18，19）之间的光学对比度。

Description

电子装置和用于制造电子装置的方法
技术领域
本发明涉及一种电子装置和一种用于制造电子装置的方法。
背景技术
电子装置在切断状态下具有不均匀的光学外观。所述电子装置能够具有光电子器件以及非光电子器件，其接触材料和表面提供不同的色彩印象和亮度印象。
发明内容
本发明的目的是，提供一种在切断状态下具有均匀的光学外观的电子装置。
所述问题通过一种根据独立权利要求1所述的电子装置来解决。
在从属权利要求中说明电子装置的改进形式和有利的扩展方案。
不同的实施形式具有带有光电子器件和非光电子器件的电子装置。在切断状态下使光学外观均匀化。
在光电子器件的接通状态下，最小化吸收损失。
电子装置具有带有至少一个连接面的支承体。至少一个电子器件借助于接触材料固定在连接面上。遮盖面设置在支承体上并且包围连接面。电子装置具有至少一个由覆盖材料覆盖的被覆盖的区域。覆盖材料设计成，使得最小化遮盖面和被覆盖的区域之间的光学对比度。
在一个优选的实施形式中，连接面是电的、优选金属的接触面。
替选地或者补充地，连接面是尤其为非金属的粘接面。这能够应用于生长在蓝宝石上的光电子器件。
光学对比度涉及色彩对比度。替选地或者补充地，光学对比度也涉及亮度对比度。一方面，通过遮盖面和覆盖材料具有相似的、优选相同的反射率来最小化光学对比度。另一方面，通过遮盖面和覆盖材料具有相似的、优选相同的颜色来最小化光学对比度。
能够通过色距ΔE来描述色度坐标差，进而描述色彩对比度。同义于“相同的颜色”而使用术语“相同的色价”。ΔE<2的色距对人眼而言几乎是不能够被感受到的。与此相反地，ΔE>5-10的色距被感觉为其他的颜色。遮盖面的颜色和覆盖材料的颜色优选具有ΔE<5、尤其优选ΔE<3的色距。
覆盖材料相对于遮盖面的亮度印象的相似性能够表现在反射比差中。在覆盖之前，例如，被金覆盖的焊盘具有大约55%的反射比。遮盖面的材料能够具有为大约95%的反射比。因此限定的40%的差能够被限定为干扰的初始状态。遮盖面的反射率与覆盖材料的反射率的差优选小于20%并且尤其优选小于10%。遮盖面和覆盖材料的反射率的差的任意的减小都产生更均匀的亮度印象。
除对比度最小化之外，用覆盖材料部分地或者完全覆盖电子器件引起对电子器件进行腐蚀保护。
相对于使用由扩散塑料制成的透镜或粗化透镜表面或者用扩散树脂对透镜表面覆层，使用覆盖材料是有利的。
在一个优选的实施形式中，接触材料具有焊料或粘接剂。这是有利的，因为由此电子器件与连接面能够机械地和/或导电地连接。
在一个优选的实施形式中，电子器件能够是光电子器件，尤其是LED。光电子器件能够生长在III-V族化合物半导体材料上，尤其是生长在例如为氮化镓（GaN）的氮化物化合物半导体材料上。光电子器件具有至少一个发射电磁辐射的有源区。所述有源区能够是pn结、双异质结构、多量子阱结构（MQW）、单量子阱结构（SQW）。量子阱结构表示：量子阱（三维）、量子线（二维）和量子点（一维）。
在一个优选的实施形式中，电子器件能够是非光电子器件。能够使用例如为存储器或控制器的ESD（静电放电）半导体芯片和/或微芯片作为非光电子器件。替选地或者补充地，能够使用例如是电阻器、线圈、电容器的无源器件作为非光电子器件。
在一个优选的实施形式中，光电子器件是导线接触的半导体芯片。替选地或者补充地，因此，光电子器件能够构造成倒装芯片。带有倒装芯片形式的光电子器件的实施形式是有利的，因为取消由于接合线所引起的遮暗并且有源面没有由于所述光电子器件上的焊盘而丧失。
在一个优选的实施形式中，由覆盖材料所覆盖的区域包括非光电子器件的背离支承体的面。
在一个优选的实施形式中，被覆盖的区域包括电子器件的侧面。
在一个优选的实施形式中，被覆盖的区域包括连接面的没有被电子器件覆盖的区域。
在一个优选的实施形式中，被覆盖的区域包括接触材料的没有被电子器件覆盖的区域。
在一个优选的实施形式中，接合线能够由覆盖材料覆盖。
在一个优选的实施形式中，尤其为螺钉的固定单元能够由覆盖材料覆盖。
在一个优选的实施形式中，非光电子器件能够完全地由覆盖材料覆盖。完全覆盖非光电子器件是尤其有利的，因为因此最小化在被覆盖的器件和遮盖面之间的对比度，优选使对比度消失。
被覆盖的区域是有利的，因为在切断状态下，通过覆盖而使电子装置的光学印象均匀化。此外有利的是，减少在电子装置的反射差的表面上的光吸收。
在一个优选的实施形式中，遮盖面具有陶瓷的、优选白色的材料。替选或者补充于此的是，遮盖面具有层压的环氧树脂。替选或者补充于此的是，遮盖面具有阻焊漆。
在一个优选的实施形式中，覆盖材料具有染色的硅树脂。替选或者补充于此的是，覆盖材料具有染色的环氧树脂，尤其为阻焊漆。替选或者补充于此的是，覆盖材料具有热塑性塑料。
在一个优选的实施形式中，覆盖材料通过颜料、尤其通过二氧化钛（TiO2）颗粒来染色。
在一个优选的实施形式中，在覆盖材料中的二氧化钛颗粒的比例为直至70%的重量百分比、优选大约25%的重量百分比。
在一个优选的实施形式中，遮盖面是高反射的，其反射率大于70%。替选或者补充于此的是，覆盖材料是高反射的，其反射率大于70%。
不同的实施形式具有用于制造电子装置的方法。在一个优选的实施形式中，将遮盖面以面和结构化的方式施加到支承体上。在此空出至少一个连接面。随后在所述连接面上安装至少一个电子器件。随后覆盖在连接面上的至少部分暴露的区域。
替选地或者补充地，在非光电子器件中，用覆盖材料来覆盖电子器件上背离支承体的面。
在一个优选的实施形式中，通过分配或计量来用覆盖材料进行覆盖。
在一个优选的实施形式中，通过喷射来用覆盖材料进行覆盖。
附图说明
以下借助附图详细阐明根据本发明的解决方案的不同的实施例。
图1示出带有光电子器件的电子装置的断面的剖面图；
图2a和2b示出带有具有导线接触部的光电子器件的电子装置的断面的俯视图；
图3a和3b示出带有具有倒装芯片接触部的光电子器件的电子装置的断面的俯视图；
图4示出带有非光电子器件的电子装置的断面的剖面图；
图5示出带有光电子器件和非光电子器件的电子装置的断面的剖面图；
图6a示出带有非光电子器件、尤其带有无源器件的电子装置的断面的剖面图；
图6b和6c示出带有非光电子器件、尤其带有无源器件的电子装置的断面的俯视图；
图7a示出带有非光电子器件、尤其带有无源器件的电子装置的断面的剖面图；
图7b和7c示出带有非光电子器件、尤其带有无源器件的电子装置的断面的俯视图。
具体实施方式
相同的、同类的或起相同作用的元件在图中设有相同的附图标记。图以及在图中示出的元件彼此间的大小比例不能够视作是按比例的。相反地，为了更好的可视性以及为了较好的理解，能够夸大地示出各个元件。
图1示出电子装置1的断面的剖面图。在支承体2上设置有连接面6。光电子器件3a借助于接触材料4固定在连接面6上。遮盖面5包围在支承体2上的连接面6。被覆盖的区域15由覆盖材料10覆盖。覆盖材料10设计成，使得最小化遮盖面5和被覆盖的区域15之间的光学对比度。
连接面6能够是电接触面。替选地，连接面6也能够是尤其为非金属的粘接面。
光学对比度是色彩对比度和/或亮度对比度。
接触材料4能够是焊料或粘接剂。光电子器件3a能够是LED。
被覆盖的区域15包括光电子器件3a的侧面7、连接面6的没有被光电子器件3a覆盖的区域和接触材料4的没有被光电子器件3a覆盖的区域。光电子器件3a的背离支承体2的面8不具有覆盖材料10。在有源区中产生的电磁辐射21优选地穿过背离支承体2的面8发射。
遮盖面5能够是陶瓷的、优选为白色的材料。替选或者补充于此的是，遮盖面5能够是层压的环氧树脂。替选或者补充于此的是，遮盖面5能够具有阻焊漆或热塑性塑料（预模制封装件）。
覆盖材料10能够是染色的硅树脂。替选或者补充于此的是，覆盖材料10能够是染色的环氧树脂，尤其是阻焊漆。替选或者补充于此的是，覆盖材料10能够具有热塑性塑料。
覆盖材料10能够通过颜料11、尤其是通过二氧化钛（TiO2）颗粒来染色。在覆盖材料中的二氧化钛颗粒的比例为直到大约70%的重量百分比、优选地大约25%的重量百分比。
遮盖面5和/或覆盖材料（10）能够是高反射的。在此，各自的反射率大于70%。
图2a示出在施加覆盖材料10之前的电子装置的俯视图。光电子器件3a借助于接触材料4固定在连接面6上。光电子器件3a实现为导线接触的半导体芯片。借助于接合线14通过光电子器件3a上的焊盘20来实现接触。
对观察者而言，在光电子器件3a周围，在所有侧上能够看到接触材料4。在光电子器件3a的焊盘20上，也能够看到接触材料4。在遮盖面5和带有暴露的接触材料4的区域之间，能够直接地看到连接面6。接触材料4和连接面6与遮盖面5相比被较暗地着色，并且与遮盖面5相比在色彩和亮度方面明显突出。对于带有光电子器件3a的电子装置1的观察者而言，暗的着色在切断状态下是影响美学的。此外，带有光电子器件3a的电子装置1的暗的区域在接通状态下导致不期望的吸收损失。为了解决或减少这两个问题，在带有暴露的连接面6和暴露的接触材料4的区域15上施加覆盖材料10。该结果在图2b中可见。
图2b示出在施加覆盖材料10之后的电子装置的俯视图。区域15完全由覆盖材料10所覆盖。覆盖材料10中的颜料11和覆盖材料10自身引起在被覆盖的区域15和遮盖面5之间的对比度消失。因此，用虚线示出被覆盖的区域15和遮盖面5之间的边界。光电子器件3a的背离支承体2的表面8不具有覆盖材料10。
在一个没有示出的实施例中，接合线14也用覆盖材料10覆盖。
图3a示出一种电子装置，其中光电子器件构造成倒装芯片。除在图3a中取消图2a中的焊盘20和接合线14之外，所述装置与图2a中的装置相同。这通过完全地经由光电子器件3a的背侧进行光电子器件3a的接触来实现。
图3b示出一种电子装置，其中光电子器件3a构造成倒装芯片并且光电子器件3a和遮盖面5之间的暴露区域被覆盖。被覆盖的区域16由覆盖材料10覆盖，使得在遮盖面5和可发光的半导体芯片3a之间获得具有相对于遮盖面5最小的对比度的区域。
图4示出一种电子装置，其中电子器件是非光电子器件3b、尤其是例如存储器或控制器的ESD半导体芯片和/或微芯片。因为非光电子器件3b没有发射或感应电磁辐射，所以非光电子器件3b的背离支承体2的整个面8能够用覆盖材料10覆盖。如已经在图1中示出，在非光电子器件3b中，侧面7和带有暴露的接触材料4并且带有暴露的连接面6的区域也能够用覆盖材料10覆盖。在完全覆盖非光电子器件3b中被覆盖的区域17引起均匀的色彩效果并且最小化侧面7上的吸收损失以及非光电子器件3b的背离支承体2的表面8上的吸收损失。
图5示出一种电子装置，其中光电子器件3a和非光电子器件3b彼此直接相邻地设置在支承体2上。在光电子器件3a中被覆盖的区域15和在完全覆盖非光电子器件3b的情况下被覆盖的区域17与在图1和图4中的所述区域相同。电子器件3a和3b由浇注材料13浇注。在浇注材料13中引入散射中心12。非光电子器件3b的完全的覆盖部17以及光电子器件3a中被覆盖的区域15降低了不期望的吸收损失。由光电子器件3a发出的电磁辐射21在散射中心上被散射，尤其是被反射。被反射的辐射大部分撞到被覆盖的区域15和17以及遮盖面5上。覆盖材料10和遮盖面5设计成是高反射的。在更大程度上，被反射的电磁辐射仅还由光电子器件3a的背离支承体2的表面8吸收。
图6a示出电子装置的断面的剖面图，其中电子器件是非光电子器件3c。特别地，非光电子器件3c能够是无源器件。特别地，电阻器、电容器或线圈能够设为无源器件。目前为具有SMD（表面安装器件）结构的器件。在此，由覆盖材料10覆盖的区域18包括连接面6的没有由无源器件3c覆盖的区域和接触材料4的没有由无源器件3c覆盖的区域。接触材料4在连接面6和无源器件3c的SMD焊接连接面22之间获得电的以及机械的连接。如已在以上附图中示出，遮盖面5包围连接面6。无源器件3c的背离支承体2的面8a保持未被覆盖。
图6b示出在通过覆盖材料10覆盖暴露的区域之前图6a中的电子装置的断面的俯视图。由于无源器件3c固定在两个连接面6上，接触材料4分布在焊接端面22的边界之外。光学印象是极其不均匀的。
图6c示出图6b中的装置，其中在图6c中，用覆盖材料10来覆盖在连接面6上的和在接触材料4上的暴露区域。得到被覆盖的区域18。如已在上述实施例中描述，即便在无源器件3c中通过部分地覆盖暴露区域也降低光学对比度。在图6c的实施例中，焊接连接面22和无源器件3c的背离支承体2的面8a保持为未被覆盖材料所覆盖。
图7a示出电子装置的断面的剖面图，其中如已在图6a中示出，电子器件是无源器件3c。直接邻接于焊接连接面22的接触材料4在无源器件3c和连接面6之间建立电的和机械的接触。优选地，对于该功能而言焊料用作接触材料4。此外，接触材料4在无源器件3c的朝向支承体2的面8b和支承体之间提供纯机械的接触。优选地，对于该功能而言粘接剂用作接触材料4。覆盖材料10覆盖整个无源器件3c、连接面6的由接触材料4覆盖的区域和连接面6的暴露区域。覆盖材料10与遮盖面5齐平地邻接。这在完全覆盖无源器件3c的情况下获得被覆盖的区域19。
图7b示出在通过覆盖材料10覆盖暴露区域之前图7a中的电子装置的断面的俯视图。由于无源器件3c固定在两个连接面6上，接触材料4分布在焊接连接面22的边界之外。在两个焊接连接面22之间，在支承体2和无源器件3c的朝向支承体2的面8b（在此见图7a；在图7b中不可见）之间设有附加的接触材料4。所述附加的接触材料4侧向地在无源器件3c下方突出。由于连接面6的和接触材料4的暴露区域光学印象是极其不均匀的并且在与光电子器件组合时出现吸收损失。
图7c示出图7a中的电子装置的断面的俯视图，即在通过覆盖材料10覆盖暴露区域之后。在完全覆盖无源器件3c的情况下得到被覆盖的区域19。遮盖面5和被覆盖的区域19之间的对比度被最小化，优选地，不再能够看出对比度。该光学印象是极其均匀的。为了表明该内容，以虚线示出无源器件3c位于被覆盖的区域19下方的结构。
为了阐明所基于的思想，借助一些实施例描述所述电子装置。在此，所述实施例不局限于特定的特征组合。即使一些特征和扩展方案仅结合特殊的实施例或各个实施例描述，也能够将它们分别与其他实施例中的其他特征组合。同样能够考虑的是，只要保持实现普遍的技术教导，就可在实施例中删去或添加各个示出的特征或特殊的扩展方案。
附图标记列表
1             电子装置
2             支承体
3a、3b、3c    电子器件
3a            光电子器件
3b、3c        非光电子器件
4             接触材料
5             遮盖面
6             连接面
7             电子装置3a、3b的侧面
8             电子装置3a、3b的背离支承体2的面
8a            非光电子器件3c的背离支承体2的面
8b            非光电子器件3c的朝向支承体2的面
10            覆盖材料
11            颜料
12            浇注材料13中的散射中心
13            浇注材料
14            接合线
15            光电子器件3a中被覆盖的区域，其是导线接触的
16            光电子器件3a中被覆盖的区域，其是倒装芯片
17            在完全覆盖非光电子器件3b的情况下的被覆盖的区域
18            在部分覆盖非光电子器件3c的情况下的被覆盖的区域
19    在完全覆盖非光电子器件3c的情况下的被覆盖的区域
20    光电子器件3a上的焊盘
21    由光电子器件3a发射的电磁辐射
22    非光电子器件3c的焊接连接面（SMD接触）

Claims (15)

1.电子装置（1），带有：
-支承体（2），
-在所述支承体（2）上的至少一个连接面（6），
-至少一个电子器件（3a，3b，3c），所述至少一个电子器件借助于接触材料（4）至少固定在所述连接面（6）上，
-遮盖面（5），所述遮盖面包围在所述支承体（2）上的所述连接面（6），
-至少一个被覆盖的区域（15，16，17，18，19），所述至少一个被覆盖的区域由覆盖材料（10）覆盖，
其中所述覆盖材料（10）设计成，使得最小化在所述遮盖面（5）和所述被覆盖的区域（15，16，17，18，19）之间的光学对比度。
2.根据权利要求1所述的电子装置，其中所述连接面（6）包括电接触面和/或粘接面。
3.根据权利要求1或2所述的电子装置，其中所述光学对比度是色彩对比度和/或亮度对比度。
4.根据上述权利要求之一所述的电子装置，其中所述接触材料（4）具有焊料和/或粘接剂。
5.根据上述权利要求之一所述的电子装置，其中所述电子器件包括光电子器件（3a），尤其是LED。
6.根据上述权利要求之一所述的电子装置，其中所述电子器件包括无源器件和/或非光电子器件（3b，3c），尤其是静电放电的半导体芯片。
7.根据权利要求6所述的电子装置，其中所述被覆盖的区域（17，19）包括所述非光电子器件（3b，3c）的背离所述支承体（2）的面（8，8a）。
8.根据上述权利要求之一所述的电子装置，其中所述被覆盖的区域（15，16，17）包括所述电子器件（3a，3b）的侧面（7）。
9.根据上述权利要求之一所述的电子装置，其中所述被覆盖的区域（15，16，17，18，19）包括所述连接面（6）的没有被所述电子器件（3a，3b，3c）覆盖的区域。
10.根据上述权利要求之一所述的电子装置，其中所述被覆盖的区域（15，16，17，18，19）包括所述接触材料（4）的没有被所述电子器件（3a、3b、3c）覆盖的区域。
11.根据上述权利要求之一所述的电子装置，其中所述遮盖面（5）具有陶瓷的、优选白色的材料和/或层压的环氧树脂和/或阻焊漆。
12.根据上述权利要求之一所述的电子装置，其中所述覆盖材料（10）具有染色的硅树脂和/或至少一种染色的环氧树脂、尤其是阻焊漆和/或热塑性塑料。
13.根据权利要求12所述的电子装置，其中所述覆盖材料（10）通过颜料（11）、尤其通过二氧化钛（TiO2）颗粒染色。
14.根据权利要求13所述的电子装置，其中在所述覆盖材料（10）中的所述二氧化钛颗粒的比例直至70%的重量百分比、优选为大约25%的重量百分比。
15.根据上述权利要求之一所述的电子装置，其中所述遮盖面（5）和/或所述覆盖材料（10）是高反射的，其反射率分别大于70%。
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