CN102651445A - 发光器件封装件 - Google Patents
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- 238000004806 packaging method and process Methods 0.000 claims description 78
- 238000009434 installation Methods 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 3
- 229920005989 resin Polymers 0.000 description 14
- 239000011347 resin Substances 0.000 description 14
- 230000032683 aging Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 235000019994 cava Nutrition 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000011514 reflex Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005562 fading Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
本发明提供了一种发光器件封装件,其包括:封装件体;第一引线框架,其被耦接至封装件体并且包括具有暴露面的第一凹陷,第一凹陷具有在该第一凹陷中向下凹进而形成的芯片安装区域,其中芯片安装区域的底表面的至少一部分被暴露于封装件体的底表面;第二引线框架,其被耦接至封装件体以便离开第一引线框架预定的距离,并且第二引线框架包括具有与第一凹陷的暴露面相对的暴露面的第二凹陷;以及至少一个发光器件,其被安装在第一引线框架的芯片安装区域上并且与第一和第二引线框架电连接。
Description
相关申请的交叉引用
本申请要求2011年2月22日在韩国知识产权局所提交的韩国专利申请第10-2011-0015483号的优先权,该在先韩国专利申请的全部内容以引用的方式并入本文。
技术领域
本发明涉及发光器件封装件,具体而言,涉及这样的发光器件封装件,其具有能够防止树脂材料老化的功能和优越的热辐射属性并且考虑了光效率的改进。
背景技术
通常,发光二极管(LED)(一种半导体发光器件)是一种能够发出具有各种颜色的光的半导体器件,其发光是通过当施加电流时电子与电子空穴在P型半导体和N型半导体之间的结处的再结合实现的。
发光二极管(LED)的优点在于其不妨碍生态环境、允许以几个纳秒的响应速率进行高速响应从而在视频信号流中有效、允许脉冲驱动、具有100%或更高的色彩再现性、并且能够通过调整红色、绿色或蓝色发光二极管芯片的光量来光学地改变亮度、色温等等。
在近些年当中,使用氮化物半导体的发光二极管已经被用作白色光源并且已经在诸如键盘、背光、交通信号、机场跑道中的引导光、照明灯泡等各种领域中被采用。由于发光二极管芯片的用途被如此改变,所以发光器件封装件的重要性已经凸显。
具体而言,对于发光器件封装件把从发光器件产生的热有效地发出到外部的需求已经增加。这是因为密封了发光器件的树脂封装部件和形成封装件体的注入树脂会在发光器件所发出的热没有被有效地发出到外部的情况下发生退化。这种退化在高输出的发光器件中会更加严重。
另外,在普通的封装件结构中,会在由注入树脂制成的封装件体中模塑引线框架,并且由注入树脂制成的封装件体的内壁会作为反射膜。
然而,由于注入树脂具有对短波长的光或对热敏感的特性,所以注入树脂的化学属性会变化并且其特性会被诸如紫外线光之类的短波长的光所改变。
即,在普通的封装件结构中,从发光器件产生的光在直接照射在封装件结构的树脂内壁上时会使得由树脂制成的内壁退化和褪色,由此反射作用会降低从而使得发光器件的可靠性下降。
与此同时,由于树脂表面的老化会随着光源输出的增加而相对地加快,所以已经对能够应用于高输出的发光器件的封装件结构有所需求。
发明内容
本发明的一个方面提供了一种具有改进的可靠性的发光器件封装件,这是通过有效地发出从发光器件产生的热来实现的。
本发明的一个方面还提供了一种具有改进的光效率的发光器件封装件,这是通过防止由于从发光器件发出的侧光所引起的树脂的老化和褪色从而允许增加光反射性来实现的。
本发明的一个方面还提供了一种能够防止电气故障的出现的发光器件封装件,所述电气故障是在树脂封装部件的密封期间由导线被压迫从而与引线框架相接触所引起的。
根据本发明的一个方面,提供一种发光器件封装件,其包括:封装件体;第一引线框架,其被耦接至所述封装件体并且包括具有暴露面的第一凹陷,所述第一凹陷具有在该第一凹陷中向下凹进而形成的芯片安装区域,其中所述芯片安装区域的底表面的至少一部分被暴露于所述封装件体的底表面;第二引线框架,其被耦接至所述封装件体以便离开所述第一引线框架预定的距离,并且所述第二引线框架包括具有暴露面的第二凹陷,所述第二凹陷的暴露面与所述第一凹陷的暴露面相对;以及至少一个发光器件,其被安装在所述第一引线框架的芯片安装区域上并且与所述第一引线框架和所述第二引线框架电连接。
所述第一引线框架的芯片安装区域可以具有在其中形成的侧壁作为反射表面。
可以将所述芯片安装区域的侧壁形成为倾斜的。
所述第一引线框架和所述第二引线框架的侧壁可以从所述第一凹陷和所述第二凹陷的底表面向上弯曲以形成反射表面。
所述第一引线框架和所述第二引线框架的侧壁从所述第一凹陷和所述第二凹陷的底表面向上弯曲以形成阶梯部件,所述侧壁形成倾斜的反射表面。
可以将所述阶梯部件的至少一部分形成为从所述封装件体暴露。
所述芯片安装区域可以具有预定高度,使得防止从所述发光器件的侧表面发出的光照射在所述封装件体的内壁上。
所述第一凹陷和所述第二凹陷可以具有预定高度,使得防止从所述发光器件的侧表面发出的光照射在所述封装件体的内壁上。
所述第一引线框架和所述第二引线框架可以通过在其间形成的所述封装件体的绝缘部件而电隔离。
所述发光器件封装件还可以包括将所述第二凹陷的底表面与所述发光器件电连接的导线。
所述第二凹陷的顶表面上安装有齐纳二极管。
所述发光器件封装件还可以包括将所述齐纳二极管与所述第一凹陷的底表面电连接的导线。
所述发光器件封装件还可以包括在所述芯片安装区域与所述第一凹陷和所述第二凹陷中提供的树脂封装部件。
所述树脂封装部件可以包括对从所述发光器件发出的光的波长进行转换的荧光材料。
附图说明
通过以下结合附图的详细说明,将更加清晰地理解本发明的上述和其他方面、特征以及其他优点,其中:
图1是根据本发明一个实施例的发光器件封装件的示意透视图;
图2是图1中示出的发光器件封装件的平面图;
图3是图1中示出的发光器件封装件的底视图;
图4是图1中示出的发光器件封装件的侧截面图;以及
图5是图1中示出的发光器件封装件的前截面图。
具体实施方式
现在将参考附图详细描述本发明的实施例。
然而,可以按照多种不同的形式来具体实现本发明,并且不应当将本发明看作被限定于在此所阐述的实施例。而是,提供这些实施例使得本公开清晰且完整,并且向本领域技术人员完整地传达本发明的范围。
在附图中,组件的形状和尺寸会为了清楚而被放大。在整个说明书中通过相同的参考数字表示相同或等效的元件。
参考图1至图5,根据本发明一个实施例的发光器件封装件可以包括封装件体10、耦接至封装件体10的内壁的第一引线框架30和第二引线框架20、以及布置在第一引线框架30上的发光器件40。
第一引线框架30和第二引线框架20可以分别具有第一凹陷和第二凹陷。第一凹陷和第二凹陷分别具有暴露面,并且可以将第一凹陷的暴露面和第二凹陷的暴露面布置为彼此相对。在此情况下,可以将在第二引线框架20中形成的第二凹陷的底表面23用作导线接合区域。
可以由电绝缘材料制成封装件体10。此外,封装件体10可以具有在第一引线框架30与第二引线框架20之间形成的绝缘部件12,绝缘部件12与第一凹陷的底表面33和第二凹陷的底表面23形成共面的表面,使得彼此相对的第一凹陷的前沿部分与第二凹陷的前沿部分可以电隔离。
另外,可以在封装件体10的底表面中形成孔13,其被结合至在第一引线框架30中形成的凹形部件(稍后进行描述)的外侧壁并且允许第一引线框架30的底表面的至少一部分被向下暴露于封装件体10的底表面。
另外,封装件体10的一些角可以被提供有覆盖部件14,其覆盖第二引线框架20的一部分以便增强与第二引线框架20的结合力。
发光器件封装件可以具有下置结构(down-set structure),其中第一引线框架30的第一凹陷可以被提供有向下凹进形成为芯片安装区域的凹形部件,并且凹形部件的底表面35的至少一部分可以通过在封装件体10的底表面中形成的孔13被暴露于封装件体10的底表面,从而允许来自发光器件的热辐射和电信号通信。
在此情况下,可以暴露凹形部件的尽可能多的底表面35以增加散热。
即,引线框架30可以具有第一凹陷,第一凹陷具有暴露面,并且第一凹陷的底表面33可以被提供有凹形部件作为芯片安装区域。在此情况下,对应于发光器件40的尺寸来调整凹形部件的宽度、长度和深度。发光器件40可以被安装在凹形部件的底表面35上。
在此情况下,可以垂直形成凹形部件的侧壁34;然而,也可以倾斜地形成凹形部件的侧壁34以有效地在前向方向上反射发光器件40的光。
根据本发明实施例的发光器件40没有被具体限定,只要其可以被用作光源即可。然而,考虑到光源的小型化和高效率,可以采用发光二极管作为发光器件40。
发光二极管(一种通过施加电压产生光的光源)可以发出三种颜色的光,诸如红色、绿色和蓝色,并且通过对它们进行混合而呈现白光。通过安装各个彩色发光二极管芯片并且对每个发光二极管芯片施加不同电压,可以使发光二极管产生具有所需特定颜色的光。
与此同时,可以通过具有单一颜色的发光二极管芯片(例如,蓝色发光二极管芯片)和具有特定颜色的荧光物质产生白光。在此情况下,白光的产生可以是在从各个发光二极管芯片产生的光穿过荧光物质期间对各自唯一颜色的光进行混合而引起的。
发光器件40没有被限定于发光二极管,并且可以被安装在在第一引线框架30中形成的第一凹陷的凹形部件的底表面35上。本发明的实施例示出了以彼此间隔开的方式安装在凹形部件的底表面35上的两个发光器件40。然而,发光器件40可以被单独地安装,或者可以安装三个或更多的发光器件40。
可以通过导电导线41将各个发光器件40与第一引线框架30和第二引线框架20中的每一个电连接,其中各个发光器件40安装在在第一引线框架30中形成的第一凹陷的凹形部件的底表面35上。
根据发光器件40的电极分布,在所谓的倒装芯片接合的情况下,第二引线框架20与发光器件40可以经由导线41电连接,并且第一引线框架30可以不需要导线41直接电连接至发光器件40。
另外,发光器件40可以经由导线41被连接至在第一引线框架30中形成的第一凹陷的底表面33,然而可以将发光器件40连接至凹形部件的底表面以便使得导线41的长度最小化。
出于相同的原因,可以经由导线41来连接发光器件40和在第二引线框架20中形成的第二凹陷的底表面23。
通常,发光器件可以是立方体光源,而不是点光源,并因此从其各个表面发光。
特别地,由于从发光器件的侧表面会发出大量的光,因此会需要通过形成反射表面来改变光的路径,以便允许将从侧表面产生的光向上引导。
为此,在本发明的实施例中,第一引线框架30和第二引线框架20可以包括作为具有预定高度的芯片安装区域的凹形部件、从该凹形部件向上形成的第一凹陷和第二凹陷、以及构成反射表面的第一侧壁32和第二侧壁22,使得从发光器件40发出的光可以在侧壁32和22上反射以向上改变其路径。
即,第一引线框架30和第二引线框架20可以由第一凹陷的底表面33和第二凹陷的底表面23以及从第一凹陷的底表面33和第二凹陷的底表面23倾斜向上弯曲的侧壁32和22形成。由于第一引线框架30和第二引线框架20可以由金属材料制成,因此可以将侧壁32和22用作从发光器件40发出的光的反射表面。
在此情况下,第一引线框架30的侧壁32和第二引线框架20的侧壁22可以是垂直的;然而,第一引线框架30的侧壁32和第二引线框架20的侧壁22也可以是倾斜的,以便在向前向方向上有效地反射从发光器件40发出的光。
与此同时,当从发光器件40发出的光照射在封装件体10的内壁11上时,由于内壁由树脂制成,因此内壁11会被短波长的光褪色并且其可靠性降低。在本发明的实施例中,通过形成第一引线框架30和第二引线框架20的第一凹陷和第二凹陷的反射作用,可以防止从发光器件40发出的光直接照射在封装件体10的内壁11上,或者使得直接照射在封装件体10的内壁11上的从发光器件40发出的光最小化。
在第一引线框架30和第二引线框架20中形成的第一凹陷和第二凹陷的侧壁32和22中的至少一个可以从第一凹陷的底表面33或第二凹陷的底表面23向上弯曲,以形成第一阶梯部件31或第二阶梯部件21。第一阶梯部件31或第二阶梯部件21可以包括从第一凹陷的底表面33或从第二凹陷的底表面23延伸的倾斜表面,以及从该倾斜表面延伸的平面表面。
通过第一阶梯部件31和第二阶梯部件21可以更加容易地防止从发光器件40产生的光照射在封装件体10的内壁11上。由于可以通过第一阶梯部件31和第二阶梯部件21的高度来限定树脂封装部件的注入高度(稍后将描述),因此可以有助于树脂封装部件的填充。
在此情况下,第一阶梯部件31和第二阶梯部件21可以使部分区域埋在封装件体10中,从而可以增加第一引线框架30和第二引线框架20与封装件体10之间的结合力。
此外,第一阶梯部件31和第二阶梯部件21的暴露部分可以向外延伸出封装件体10,暴露部分分别位于第一凹陷和第二凹陷的暴露面的反面。
在本发明的实施例中,可以将第一阶梯部件31和第二阶梯部件21的暴露部分形成为与凹形部件的底表面35共面,这是因为第一阶梯部件31和第二阶梯部件21可以从其平面表面进一步弯曲。然而,根据产品的尺寸和形状可以适当地改变阶梯部件的结构。
可以在封装件体10中(即,在凹形部件与第一凹陷和第二凹陷中)形成密封发光器件40的透光树脂封装部件60,以便保护发光器件40并且实现构成发光器件40的材料与外部之间折射率的匹配,从而改进外部光提取效率。
树脂封装部件60可以包括散布的荧光材料以便对从发光器件40发出的光的波长进行转换,例如,吸收从发光器件40发出的光从而将吸收光转换为可见光。
例如,可以在树脂封装部件60中使用透明环氧树脂或硅树脂等。
此时,在形成树脂封装部件60期间,导线41会被压迫并且与引线框架的组件(诸如凹形部件)相接触,从而引起电气故障(诸如发生短路)。然而,在本发明的实施例中,由于可以将凹陷的部分形成为具有二阶梯层结构,所以可以将导线41安装在二阶梯层结构的上部空间和下部空间上,从而可以使得由导线被压迫所引起的缺陷最小化。
以此方式,在根据本发明实施例的发光器件封装件中,第一引线框架和第二引线框架可以具有在其中形成的凹形部件以及第一凹陷和第二凹陷,从而可以降低由于从发光器件40产生的光的照射所引起的形成封装件体10的树脂的老化。此外,发光器件封装件可以具有下置结构,以便允许在第一引线框架中形成的凹形部件的一部分暴露于封装件体10的底表面,从而可以改进对从发光器件40传递的热的散热效率,以便使得产品的可靠性最大化。
在上述发光器件封装件中,第二引线框架20还可以包括用于恒压操作的齐纳二极管50。
即,可以将齐纳二极管50安装在在第二引线框架20中形成的第二凹陷的底表面23上,并且连接至齐纳二极管50的导线41可以被连接至第一凹陷的底表面33,从而齐纳二极管50和第一凹陷的底表面33可以电连接。
因此,齐纳二极管50的安装表面可以与第一凹陷的底表面33共面,从而不产生阶梯部件,因此可以使得导线41的长度最小化。
如上所述,根据本发明的实施例,由于发光器件可以被安装在暴露于封装件体的底表面的芯片安装区域上,所以可以有效地散发从发光器件传递的热,并且可以使得注入树脂的老化最小化,从而使得产品的可靠性得以改进。
另外,由于从发光器件发出的侧光不会到达封装件体的内壁,这是因为该侧光从以二阶梯形式形成的、由金属材料制成的芯片安装区域和凹陷的侧壁被反射,因此可以防止封装件体的内壁的褪色,并且与此同时可以增加光反射性,从而使得封装件的光提取效率得以改进并且防止侧光的失真。
此外,可以在导线的接合期间确保在引线框架的密封顶部与发光器件之间的最大上部空间和下部空间,从而可以使得诸如由于导线被压迫而与引线框架的表面相接触所引起的短路之类的电气故障的出现最小化。
虽然已经结合实施例示出并描述了本发明,然而对于本领域技术人员来说应当清楚的是,在不背离由所附权利要求限定的本发明的精神和范围的情况下可以进行修改和变形。
Claims (14)
1.一种发光器件封装件,其包括:
封装件体;
第一引线框架,其被耦接至所述封装件体并且包括具有暴露面的第一凹陷,所述第一凹陷具有在该第一凹陷中向下凹进而形成的芯片安装区域,其中所述芯片安装区域的底表面的至少一部分被暴露于所述封装件体的底表面;
第二引线框架,其被耦接至所述封装件体以便离开所述第一引线框架预定的距离,并且所述第二引线框架包括具有暴露面的第二凹陷,所述第二凹陷的暴露面与所述第一凹陷的暴露面相对;以及
至少一个发光器件,其被安装在所述第一引线框架的芯片安装区域上并且与所述第一引线框架和所述第二引线框架电连接。
2.权利要求1的发光器件封装件,其中所述第一引线框架的芯片安装区域具有在其中形成的侧壁作为反射表面。
3.权利要求2的发光器件封装件,其中将所述芯片安装区域的侧壁被形成为倾斜的。
4.权利要求1或2的发光器件封装件,其中所述第一引线框架和所述第二引线框架的侧壁从所述第一凹陷和所述第二凹陷的底表面向上弯曲以形成反射表面。
5.权利要求1或2的发光器件封装件,其中所述第一引线框架和所述第二引线框架的侧壁从所述第一凹陷和所述第二凹陷的底表面向上弯曲以形成阶梯部件,并且所述侧壁形成倾斜的反射表面。
6.权利要求5的发光器件封装件,其中所述阶梯部件的至少一部分从所述封装件体暴露。
7.权利要求1或2的发光器件封装件,其中所述芯片安装区域具有预定高度,使得防止从所述发光器件的侧表面发出的光照射在所述封装件体的内壁上。
8.权利要求1或2的发光器件封装件,其中所述第一凹陷和所述第二凹陷具有预定高度,使得防止从所述发光器件的侧表面发出的光照射在所述封装件体的内壁上。
9.权利要求1或2的发光器件封装件,其中所述第一引线框架和所述第二引线框架通过在其间形成的所述封装件体的绝缘部件而电隔离。
10.权利要求1或2的发光器件封装件,还包括将所述第二凹陷的底表面与所述发光器件电连接的导线。
11.权利要求1或2的发光器件封装件,其中所述第二凹陷的顶表面上安装有齐纳二极管。
12.权利要求11的发光器件封装件,还包括将所述齐纳二极管与所述第一凹陷的底表面电连接的导线。
13.权利要求1或2的发光器件封装件,还包括在所述芯片安装区域与所述第一凹陷和所述第二凹陷中提供的树脂封装部件。
14.权利要求13的发光器件封装件,其中所述树脂封装部件包括对从所述发光器件发出的光的波长进行转换的荧光材料。
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CN101939852A (zh) * | 2007-12-24 | 2011-01-05 | 三星Led株式会社 | 发光二极管封装件 |
US20110006318A1 (en) * | 2009-07-08 | 2011-01-13 | Paragon Semiconductor Lighting Technology Co. Ltd. | Led package structure with concave area for positioning heat-conducting substance and method for manufacturing the same |
-
2011
- 2011-02-22 KR KR1020110015483A patent/KR20120096216A/ko not_active Application Discontinuation
-
2012
- 2012-02-22 US US13/402,379 patent/US20120211789A1/en not_active Abandoned
- 2012-02-22 EP EP12156525A patent/EP2492982A2/en not_active Withdrawn
- 2012-02-22 CN CN2012100421976A patent/CN102651445A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US6054716A (en) * | 1997-01-10 | 2000-04-25 | Rohm Co., Ltd. | Semiconductor light emitting device having a protecting device |
KR20090036311A (ko) * | 2007-10-09 | 2009-04-14 | 알티전자 주식회사 | 발광 다이오드 패키지 |
CN101939852A (zh) * | 2007-12-24 | 2011-01-05 | 三星Led株式会社 | 发光二极管封装件 |
US20100133560A1 (en) * | 2008-11-25 | 2010-06-03 | Wan Ho Kim | Light emitting device package |
US20110006318A1 (en) * | 2009-07-08 | 2011-01-13 | Paragon Semiconductor Lighting Technology Co. Ltd. | Led package structure with concave area for positioning heat-conducting substance and method for manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
EP2492982A2 (en) | 2012-08-29 |
KR20120096216A (ko) | 2012-08-30 |
US20120211789A1 (en) | 2012-08-23 |
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