CN105814704A - 用于led磷光体封装的反射焊接掩膜层 - Google Patents

用于led磷光体封装的反射焊接掩膜层 Download PDF

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CN105814704A
CN105814704A CN201480069463.1A CN201480069463A CN105814704A CN 105814704 A CN105814704 A CN 105814704A CN 201480069463 A CN201480069463 A CN 201480069463A CN 105814704 A CN105814704 A CN 105814704A
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led die
substrate
mask layer
equipment
led
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Y.荣
F.S.戴安娜
T.朱
G.古思
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Lumileds Holding BV
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Koninklijke Philips Electronics NV
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Abstract

一种安装衬底（40）具有图案化金属层，其限定用于结合到LED管芯的底金属结合盘的多个顶金属结合盘。焊接掩膜层（52）在该安装衬底之上形成，其中该掩膜具有暴露顶金属结合盘的开口并且保护衬底上的金属迹线。掩膜层是高反射性的白色涂料。暴露的顶金属结合盘然后用焊料润湿。LED管芯的底金属结合盘然后被焊接到该暴露的顶金属结合盘，使得掩膜层包围每一个LED管芯以反射光。反射环（60）粘附于该衬底以包围该LED管芯。粘性磷光体材料（62）然后部分地填充该环并且被固化。来自LED管芯和磷光体的所有向下光被环和焊接掩膜层向上反射。

Description

用于LED磷光体封装的反射焊接掩膜层
技术领域
本发明涉及用于磷光体转换型发光二极管（pcLED）的封装，并且特别地涉及增加光提取的封装。
背景技术
对于高亮度应用，常见的是在衬底上安装LED管芯的阵列，其中该衬底具有金属迹线（trace)，该金属迹线互连LED管芯并且通向用于连接到电源的阳极和阴极电极。常见的是，LED管芯是基于GaN的并且发射蓝光，其中磷光体（例如YAG磷光体）沉积在所有LED管芯之上。通过磷光体泄漏的蓝光和黄-绿磷光体光的组合创建白光。
来自LED管芯的一些光和来自磷光体的一些光在向下的方向上发射并且被该衬底部分地吸收。另外，如果单独的LED管芯也安装在（典型地比该LED管芯大得多的）基板上，并且基板电极结合到衬底，那么基板表面也吸收LED和磷光体光中的一些。衬底和基板的这样的吸收降低了模块的整体效率。
需要的是用于磷光体转换型LED的封装技术，其导致由该封装发射更多的光。
发明内容
在本发明的一个示例中，起始衬底包含用于散热的铝。薄电介质层在该衬底的顶表面之上形成，并且金属迹线在该电介质之上图案化。该金属迹线限定用于多个LED管芯的小面积焊盘、用于模块的更大阳极和阴极电极（以及焊盘）、以及LED管芯和电极之间的互连。
在一个实施例中，丝网印刷用于在衬底之上沉积焊接掩膜。焊接掩膜沉积电介质，其具有暴露各种电极和LED管芯焊盘的开口。电介质是散射和反射任何入射光的高反射性材料，例如包括TiO2、ZiO2、VO2或其它合适的反射粒子的粘结剂。该反射材料可以是具有大于大约94%的反射率的用于积分球的相同的白色涂料。
接下来，LED管芯电极焊接到暴露的焊盘。焊接掩膜开口可以足够小，以使得LED管芯的外围与反射材料对齐或者悬垂于该反射材料之上，使得来自LED管芯的任何向下光将被该反射材料反射。
形成垂直壁的反射环然后粘附于该衬底以包围LED管芯的阵列。
磷光体然后沉积在该环内（该环也用作模具）以包封LED管芯并且波长转换从该LED管芯发射的光。磷光体也用于将热量远离LED管芯传导。在一个实施例中，LED管芯发射蓝光，并且该蓝光加磷光体光创建白光。
LED管芯可以包括或者可以不包括基板。基板典型用于简化操作、增加机械强度和/或提供用于焊接到电路板的鲁棒且简单的电极。如果使用这样的基板，该基板与实践中一样小，以便不会拦截来自LED半导体层的向下光。
在磷光体的沉积之前，圆顶状透镜可以在LED管芯之上成型以用于改进光提取。
反射焊接掩膜不增加附加的步骤，却大大提高了LED模块的效率。
描述了其它实施例。
附图说明
图1是现有技术LED管芯的截面图。
图2是安装在最小面积基板上的LED管芯的截面图。
图3是示出电极图案的LED管芯或基板的底视图。
图4是具有电介质层和图案化金属层的铝衬底的自顶而下视图。
图5图示在反射焊接掩膜的沉积之后暴露焊盘的图4的衬底。
图6图示在LED管芯已经被焊接到焊盘之后图5的衬底。
图7是图5的衬底的部分的沿着图5中的线7-7的放大截面图，其示出具有光学透镜的两个LED管芯。
图8是反射环围绕LED管芯的阵列粘附之后图6的衬底的自顶而下视图。
图9是图8的衬底的部分的沿着图8中的线9-9的放大截面图，其图示环用包封磷光体混合物至少部分地填充。
相同或相似的元件用相同的编号标记。
具体实施方式
图1图示常规的LED管芯12。尽管倒装芯片管芯在示例中示出，但是本发明适用于任何类型的LED管芯，包括垂直LED管芯、横向LED管芯等等。
LED管芯12包括耦合到p层16的底阳极电极14和通过填充在p层16和有源层24中的用电介质覆盖的蚀刻的开口中的导体22耦合到n层20的底阴极电极18。电极配置可能更复杂并且包括用于跨LED管芯12更好地传播电流的分布式电极。有源层24生成具有峰值波长的光。在一个示例中，该峰值波长是蓝色波长并且层16、20和24是基于GaN的。
层16、20和24在诸如蓝宝石之类的衬底26之上外延生长。可替代地，生长衬底可以被移除并且被通过粘合剂或通过其它技术粘附于半导体层的透明支撑衬底取代。可替代地，不存在支撑衬底，尽管薄LED半导体层的操作变得更困难。
如在图2中示出的，LED管芯12可以可选地安装在基板28上，该基板用于操作简便、机械支撑、散热和简化用于安装在印刷电路板上的电极结构。基板28包括导热体30、底电极32和34，以及将底电极32/34连接到LED管芯电极14/18的过孔36和37。基板表面上的附加的盘（未示出）用于将LED管芯电极14/18连接到过孔36/37。典型的基板比LED管芯12大得多以达成上面提到的功能。然而，在本发明优选的实施例中，当使用基板时，期望的是使基板比典型尺寸小得多以最小化基板表面的光吸收。在一个实施例中，生长衬底26在LED管芯12安装在基板28上之后被移除。
下文中的术语“LED管芯”是指裸芯片（例如图1）或安装在基板之上的芯片（例如图2）。
图3图示用于LED管芯12或基板28的可能的底电极配置。
在剩余的附图中，假定没有使用基板。然而，LED管芯/基板可以在剩余的附图中替代裸LED管芯12。
图4是用于LED管芯12的阵列的衬底40的自顶而下的视图。图7示出衬底40的截面图。衬底40可以包括由用于散热的铝或合金形成的主体41。衬底40可以具有任何形状，例如矩形、圆形等等。衬底40的长度或直径取决于其支撑的LED管芯的数量，并且将典型地在从1cm到4cm的范围中。衬底40典型通过稍后被切割用于单个化的窄连接器而连接在衬底的阵列中，以简化操作并加速处理。
不导电的电介质层42（图7）在主体41之上形成以用于电绝缘。
诸如铜之类的图案化金属层在电介质层42之上形成以限定用于阵列中的每一个LED管芯12的小焊盘组44A、44B、44C和44D，并且限定用于阵列的阳极和阴极电极的更大焊盘46和48。焊盘组44A-D可以包括一个或多个散热连接。金属层也在LED管芯12与电极46及48之间形成互连50。在该示例中，只有四个LED管芯12串联和并联连接。在其它实施例中，更多或更少的LED管芯12可以串联和/或并联地互连以实现期望的电气特性和通量。
相关的现有技术LED模块的问题是，向下发射的LED光的显著部分被安装衬底吸收。衬底的绝大部分吸收发生在每一个LED管芯12附近，因为那里是光最亮的地方。本发明最小化这样的吸收。
在图5中，白色（漫射）涂料52在衬底40之上除了焊料被应用的地方之外的所有位置中丝网印刷。图7是沿着图5中的线7-7的不连续的截面，并且在截面中示出涂料52。丝网是被图案化以阻挡白色涂料52在焊盘组44A、44B、44C和44D之上的沉积的网格。白色涂料52是然后被固化的粘性电介质。因此，白色涂料52取代常规的焊接掩膜，并且不要求附加步骤。焊接掩膜将诸如在衬底40之上流动的融化焊料之类的任何沉积的焊料限制在被掩膜暴露的区域。
漫射白色涂料的示例包括灌注有TiO2、ZiO2、VO2的粒子或其它合适的反射性的散射粒子的粘结剂（例如硅树脂）。
在另一实施例中，白色涂料与掩膜一起通过喷射、喷涂、利用蒸发的光刻过程或其它技术被应用。
商业可用的白色涂料对可见波长有大于94%的反射率，并且有时用在用于光测量的积分球中。白色涂料52材料应该是导热的。优选地，白色涂料52的反射率对于可见光为至少90%。
通过将白色涂料52应用为焊接掩膜，确保了反射材料延伸到LED管芯12的边缘并且甚至在电极之间的LED管芯12下面。因此，白色涂料52最大化衬底的反射表面面积，将应用的焊料限制到仅被焊接掩膜暴露的区域，并且充当用于金属迹线的腐蚀屏障，而没有任何附加的处理步骤，因此在该创造性过程中存在协同作用。
在另一实施例中，（例如用于非LED电路板的）常规焊接掩膜材料直接应用到衬底40的上方，随后是（使用相同的掩膜图案的）白色涂料52的沉积，如果常规焊接掩膜材料对于衬底40的充分保护和减少成本是期望的。在这样的情况中，白色涂料52保护焊接掩膜材料以免因高强度的蓝光和UV光而退化。
焊料54（图7）然后被应用到各种焊盘以用于润湿。焊料54可以被丝网印刷，或者用焊接掩膜而应用，或者以任何其它常规的方式应用。焊料54可以是焊膏。
在图6中，LED管芯12电极（或基板电极）使用加热过程被焊接到衬底的焊盘上。如看到的，在白色涂料52与LED管芯12的边缘之间不存在间隙。如果LED管芯是垂直LED管芯，则只有底电极将直接焊接到衬底42的焊盘之一，并且顶电极将被导线结合到另一焊盘。如果LED管芯是横向LED管芯，则底热盘将焊接到衬底42的焊盘之一，并且两个顶电极将导线结合到相关联的焊盘。在几乎所有LED管芯中，存在用作电气和/或热盘的至少一个底金属结合盘。
在另一实施例中，不使用焊料。取而代之地，结合可以通过超声波熔接、传导粘合（电气和热学地传导）或者使用其它技术进行。在这样的情况中，“焊接掩膜”将由合适的名称指代但是将仍然限定衬底40上的区域，LED管芯的底金属结合盘在该区域被结合，并且所暴露的区域将大约为LED管芯的尺寸。
图7是沿着图5中的线7-7的衬底40的部分的压缩和放大的截面图，该线在水平方向上跨两个LED管芯12切割。焊料54示出为将LED管芯电极连接到焊盘组44A和44D。
圆顶状透镜58可以可选地在LED管芯12之上成型以用于LED管芯12的改进的光提取和保护。在可替代的实施例中，在焊接之前，LED管芯12可以与或不与基板一起包封在圆顶状透镜中。
在图8中，反射环60粘附于衬底40的表面，包围LED管芯12的阵列。环60可以是反射性金属或涂覆有反射层的材料。环60可以用硅树脂或环氧树脂粘附。
图9是沿着图8中的线9-9的衬底40的部分的压缩的和放大的截面图，该线在水平方向上跨两个LED管芯12切割并且切割环60，其中环60的壁在LED管芯12的顶部之上延伸并且反射和混合光。
如也在图9中示出的，粘性磷光体混合物62沉积在用作模具的环60内并且被固化。磷光体混合物62可以是硅树脂和磷光体粒子的混合物。许多沉积磷光体混合物62的方式被设想，例如通过使用注射器、丝网印刷、在环中放置然后被融化的预形成的板等等。为了增加的保护，磷光体混合物62包封LED管芯12。
磷光体混合物62的厚度和磷光体粒子密度被控制以实现蓝光泄漏和磷光体转换的期望组合。磷光体可以是单个磷光体（例如YAG）或者磷光体的组合（例如YAG和红色，或绿色和红色等等），以实现期望的颜色发射。
优选地，各种层的折射率被选择以提供从高折射率的GaN到低折射率的空气的过渡，以最小化全内反射（TIR）。
在磷光体混合物62下面的衬底40的反射表面反射回超过以向下的方向发射的全部磷光体光的94%。
任何数量的LED管芯12可以安装在衬底40上，并且环60的直径需要包围LED管芯12并且可以相应地调整。任何数量的所得到的衬底40可以在系统中连接以实现任何期望的通量。在一个实施例中，所得到的结构发射白光。通过选择不同的LED管芯和磷光体，其它发射颜色是可能的。量子点材料可以替代磷光体混合物62。
通过使用本发明典型实现了大于10%的效率的提高。
尽管已经示出和描述了本发明的特定的实施例，但是将对本领域技术人员显而易见的是，可以在本发明的更宽的方面进行改变和修改而不背离本发明，并且因此所附权利要求在它们的范围之内涵盖落入本发明真实精神和范围之内的所有这样的改变和修改。

Claims (15)

1.一种发光设备，包括：
第一发光二极管（LED）管芯，其具有至少一个底金属结合盘和高度；
安装衬底，其具有限定至少一个顶金属结合盘的图案化的金属层；
在所述安装衬底之上形成的掩膜层，所述掩膜层具有至少一个暴露所述至少一个顶金属结合盘的开口，所述掩膜层由反射至少90%的可见光的反射材料形成；并且
所述第一LED管芯的所述至少一个底金属结合盘结合到所述暴露的至少一个顶金属结合盘，使得所述掩膜层包围所述第一LED管芯以反射光。
2.权利要求1的设备，进一步包括第一波长转换层，其至少覆盖在所述第一LED管芯的顶表面之上并且覆盖在所述掩膜层的至少部分之上。
3.权利要求1的设备，进一步包括具有反射内壁的环，所述反射内壁在所述第一LED管芯的高度之上延伸并且包围所述第一LED管芯。
4.权利要求1的设备，其中所述第一LED管芯包括安装在基板上的LED半导体层。
5.权利要求1的设备，进一步包括：
具有反射壁的环，所述反射壁在所述第一LED管芯的高度之上延伸并且包围所述第一LED管芯；以及
被所述环包围的第一波长转换层，其至少覆盖在所述第一LED管芯的顶表面之上并且覆盖在所述掩膜层的部分之上。
6.权利要求5的设备，其中所述第一波长转换层包括磷光体。
7.权利要求5的设备，其中所述第一波长转换层包括量子点。
8.权利要求5的设备，其中所述反射环充当用于所述第一波长转换层的模具。
9.权利要求5的设备，进一步包括透镜，其在所述第一LED管芯之上并且将所述第一波长转换层与所述LED管芯分隔开。
10.权利要求1的设备，其中所述反射材料包括白色涂料。
11.权利要求1的设备，其中所述反射材料包括在粘结剂中的反射粒子。
12.权利要求1的设备，进一步包括：
多个第二LED管芯，其具有相关联的底金属结合盘，
其中所述安装衬底上的图案化金属层限定对应于所述底金属结合盘的多个顶金属结合盘，
其中所述掩膜层具有暴露所述多个顶金属结合盘的多个开口，并且
其中所述多个第二LED管芯的多个底金属结合盘结合到所述暴露的多个顶金属结合盘，使得所述掩膜层包围每一个所述第二LED管芯。
13.权利要求12的设备，其中所述图案化的金属层将所述第一LED管芯和所述多个第二LED管芯互连并且被所述掩膜层覆盖。
14.权利要求13的设备，其中所述掩膜层是焊接掩膜层。
15.一种形成发光结构的方法，包括：
提供具有限定多个顶金属结合盘的图案化金属层的安装衬底；
沉积在所述安装衬底之上形成的掩膜层，所述掩膜层具有暴露所述多个顶金属结合盘的多个开口，所述掩膜层由反射至少90%的可见光的反射材料形成；
将相关联的发光二极管（LED）管芯的底金属结合盘结合到暴露的顶金属结合盘，使得所述掩膜层包围每个所述LED管芯以反射光；
提供包围所述LED管芯的环；以及
用波长转换材料至少部分地填充所述环，使得所述波长转换材料覆盖所述LED管芯和所述掩膜层的部分。
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CN110737137A (zh) * 2019-10-31 2020-01-31 厦门天马微电子有限公司 Led基板及制作方法、背光模组及显示装置
WO2021208264A1 (zh) * 2020-04-17 2021-10-21 宁波升谱光电股份有限公司 一种紫外led器件

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US20160315069A1 (en) 2016-10-27

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