WO2021208264A1 - 一种紫外led器件 - Google Patents

一种紫外led器件 Download PDF

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Publication number
WO2021208264A1
WO2021208264A1 PCT/CN2020/100110 CN2020100110W WO2021208264A1 WO 2021208264 A1 WO2021208264 A1 WO 2021208264A1 CN 2020100110 W CN2020100110 W CN 2020100110W WO 2021208264 A1 WO2021208264 A1 WO 2021208264A1
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Prior art keywords
ultraviolet led
substrate
led device
chip
lens
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PCT/CN2020/100110
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English (en)
French (fr)
Inventor
张耀华
杜元宝
蔡晓宁
陈复生
张庆豪
Original Assignee
宁波升谱光电股份有限公司
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Priority claimed from CN202020578530.5U external-priority patent/CN211480081U/zh
Priority claimed from CN202010305693.0A external-priority patent/CN111490142A/zh
Application filed by 宁波升谱光电股份有限公司 filed Critical 宁波升谱光电股份有限公司
Priority to KR1020227005548A priority Critical patent/KR20220033521A/ko
Priority to US17/635,391 priority patent/US20220293824A1/en
Publication of WO2021208264A1 publication Critical patent/WO2021208264A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • This application relates to the field of LED technology, in particular to an ultraviolet LED device.
  • Ultraviolet LEDs generally refer to LEDs with a central wavelength of light below 400nm. They have broad application prospects in the fields of biomedicine, anti-counterfeiting, purification (water, air, etc.), computer data storage, and military.
  • the current UV LED device adopts a structure in which a substrate and a frame are combined, and the frame is equipped with planar quartz glass, please refer to Figure 1.
  • the frame and the substrate there are two ways to combine the frame and the substrate.
  • One is to connect the ceramic frame to the substrate by bonding, and the other is to use an electroplating process to make a pure copper frame layer by layer to form an integrated connection with the substrate.
  • the two methods are complicated in process and high in cost.
  • the surface of the substrate and the frame need to be plated with gold or silver to prevent the copper pads on the substrate from being oxidized, but the reflectivity of gold or silver to ultraviolet light is very low. Please refer to the figure for the reflectivity of gold and silver to light. 2.
  • a large amount of ultraviolet light is absorbed by the inner surface material of the LED device, gold or silver, or cannot be effectively emitted to the angle of the light-emitting surface, resulting in a great waste of resources and performance.
  • the purpose of this application is to provide an ultraviolet LED device, which improves the reflectivity and utilization rate of ultraviolet light of the ultraviolet LED device and simplifies the manufacturing process.
  • an ultraviolet LED device including:
  • UV LED chip
  • a highly reflective dielectric layer located on the upper surface of the pad and outside the chip fixing portion
  • the cup lens connected with the substrate forms a cavity for accommodating the ultraviolet LED chip with the substrate.
  • the highly reflective dielectric layer is an aluminum dielectric layer or a Teflon dielectric layer.
  • the cup lens is a spherical cup lens.
  • the ultraviolet LED chip when it is a formal chip, it further includes:
  • the wire is a gold wire.
  • the substrate is an aluminum nitride ceramic substrate or an alumina ceramic substrate.
  • the cavity is filled with nitrogen or inert gas.
  • the cup lens is a quartz glass cup lens.
  • a first eutectic solder layer located on the upper surface of the substrate and around the pad;
  • the cup lens is a plate lens, and the plate lens is eutectic connected to the second eutectic welding layer.
  • the plate lens is a JGS2 glass lens.
  • a chip fixing part is provided on the pad on the upper surface of the substrate, and the chip fixing part is used to fix the ultraviolet LED chip, on the periphery of the chip fixing part and on the pad on the upper surface of the substrate. It is equipped with a highly reflective medium layer, avoiding the setting of a gold-plated layer, which can effectively improve the reflectivity of ultraviolet light and reduce the absorption of ultraviolet light by ultraviolet LED devices.
  • the lens is a cup lens and is directly connected to the substrate to form a cavity for accommodating the external LED chip. No need to set up a frame on the substrate to avoid the frame’s absorption of ultraviolet light.
  • the ultraviolet light originally irradiated on the frame position is exported to the outside through the cup lens, which improves the utilization of ultraviolet light and simplifies the production process of ultraviolet LED devices. ,reduce costs.
  • FIG. 1 is a schematic diagram of the structure of an ultraviolet LED device in the prior art
  • Figure 2 shows the reflectivity of different metals to light
  • FIG. 3 is a schematic structural diagram of an ultraviolet LED device provided by an embodiment of the application.
  • FIG. 4 is a top view of an ultraviolet LED device provided by an embodiment of the application.
  • FIG. 5 is a schematic structural diagram of an ultraviolet LED device provided by an embodiment of the application.
  • Fig. 6 is a top view of another ultraviolet LED device provided by an embodiment of the application.
  • FIG. 7 is a schematic structural diagram of another ultraviolet LED device provided by an embodiment of the application.
  • the existing UV LED devices adopt a structure in which a substrate and a frame are combined, and the manufacturing process is complicated, and the surface of the substrate and the frame needs to be plated with gold or silver, and the surface of the substrate and the frame needs to be plated with gold or silver.
  • the light is absorbed by gold or silver on the inner surface of the LED device, or cannot be effectively emitted to the angle of the light-emitting surface, resulting in a great waste of resources and performance.
  • the upper surface and the lower surface are respectively provided with a substrate 1 with pads 2;
  • UV LED chip 3
  • the chip fixing part 4 connecting the ultraviolet LED chip 3 and the bonding pad 2 on the upper surface;
  • a highly reflective dielectric layer 5 located on the upper surface of the pad 2 and outside the chip fixing portion 4;
  • the cup lens 6 connected to the substrate 1 forms a cavity 7 for accommodating the ultraviolet LED chip 3 with the substrate 1.
  • the pad 2 where the high-reflective medium layer 5 is located is the pad 2 on the upper surface of the substrate 1, that is, the high-reflective medium is provided on the upper surface of the pad 2 except for the area where the chip fixing portion 4 is located.
  • Layer 5 avoids the absorption of ultraviolet light, and increases the reflectivity of ultraviolet light while ensuring the performance and reliability of the ultraviolet LED device.
  • the pad 2 is generally a copper pad 2.
  • the high-reflective medium layer 5 refers to a medium layer with a reflectance of ultraviolet light of more than 80%.
  • the high-reflective medium layer 5 is an aluminum medium layer or a Teflon medium layer, which can further reduce the cost of the ultraviolet LED device.
  • the cup lens 6 is connected to the upper surface of the substrate 1 through a bonding medium.
  • the bonding medium is not specifically limited in this application, as long as the cup lens 6 is connected to the substrate 1 to form a closed cavity 7.
  • the bonding medium can be silica gel, epoxy glue, or the like.
  • the size of the chip fixing part 4 is set according to different sizes of the ultraviolet LED chip 3 and is consistent with the ultraviolet LED chip 3.
  • the ultraviolet LED chip 3 includes a substrate layer, a buffer layer, an N-type AlGaN layer, a negative electrode, a quantum well layer, a P-type AlGaN layer, a contact layer, and a positive electrode.
  • the specific structure is well known to those skilled in the art and will not be described in detail here. .
  • the substrate 1 is an aluminum nitride ceramic substrate 1, but this application does not specifically limit this. In other embodiments of the present application, the substrate 1 may also be an alumina ceramic substrate. 1.
  • the cup lens 6 is any one of a quartz glass cup lens 6, a soda lime glass cup lens 6, a borosilicate glass cup lens 6, and the like.
  • the cavity 7 is filled with nitrogen or an inert gas to protect the ultraviolet LED chip 3 and prolong the service life of the ultraviolet LED device.
  • an inert gas there is no specific limitation on the type of inert gas in this application, and it depends on the situation.
  • the inert gas may be helium or argon.
  • a first eutectic solder layer 10 located on the upper surface of the substrate 1 and around the pad 2;
  • a bracket 11 eutectic connected with the first eutectic welding layer 10, and the high reflective dielectric layer 5 is distributed on the inner surface of the bracket 11;
  • a highly reflective dielectric layer is distributed on the inner surface of the bracket 11, that is, an aluminum dielectric layer or a Teflon dielectric layer is distributed on the inner surface of the bracket 11. Enhance the reflection of ultraviolet light.
  • the reflection angle of the bracket 11 is not specifically limited, and it is set according to the requirements of the light exit angle.
  • the bracket 11 and the substrate, and the bracket 11 and the plate lens 13 are respectively connected by the first eutectic welding layer 10 and the second eutectic welding layer 12, which not only realizes the stepless
  • the packaging greatly improves the sealing and reliability of the ultraviolet LED device, and increases the service life of the ultraviolet LED device.
  • the plate lens 13 is a JGS2 glass lens.
  • the JGS2 glass lens can further reduce the absorption of ultraviolet light. Compared with traditional ultraviolet LED devices, the reflectance and utilization rate of ultraviolet light can be increased by more than 50%.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

一种紫外LED器件，包括上表面和下表面分别设置有焊盘（2）的基板（1）；紫外LED芯片（3）；连接紫外LED芯片（3）与位于上表面的焊盘（2）的芯片固定部（4）；位于焊盘（2）的上表面且在芯片固定部（4）外侧的高反射介质层（5）；与基板（1）相连的杯罩式透镜（6），与基板（1）形成容纳紫外LED芯片（3）的腔体（7）。基板（1）上表面的焊盘（2）上设有芯片固定部（4），在芯片固定部（4）的外围且在基板（1）上表面的焊盘（2）上设置有高反射介质层（5），有效提高紫外光线的反射率，减少对紫外光线的吸收，且杯罩式透镜（6）直接与基板（1）相连形成腔体（7），无需在基板（1）上设置框架，避免框架对紫外光线的吸收，将原本照射在框架位置的紫外光线通过杯罩式透镜（6）导出至外界，提高紫外光线的利用率，同时简化紫外LED器件的制作工艺，降低成本。

Description

一种紫外LED器件
本申请要求于2020年04月17日提交中国专利局、申请号为202010305693.0、发明名称为“一种紫外LED器件”，以及申请号为202020578530.5、实用新型名称为“一种紫外LED器件”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及LED技术领域，特别是涉及一种紫外LED器件。
背景技术
紫外LED(发光二极管)一般指发光中心波长在400nm以下的LED，在生物医疗、防伪鉴定、净化(水、空气等)领域、计算机数据存储和军事等方面具有广阔的应用前景。
目前的紫外LED器件采用基板与框架结合的结构，框架上搭载平面型的石英玻璃，请参见图1。其中，框架与基板结合的方式有两种，一种是通过粘合的方式将陶瓷框架与基板连接，另一种是采用电镀工艺逐层做出纯铜框架，与基板形成一体式连接，这两种方式工艺复杂、成本高。另外，还需要在基板和框架的表面需要镀金或银，以防止基板上的铜焊盘被氧化，但是金或银对紫外光的反射率很低，金和银对光线的反射率请参见图2，大量紫外光线被LED器件内部表面材质金或银所吸收，或无法有效发射至发光面角度，造成极大的资源浪费和性能浪费。
因此，如何解决上述技术问题应是本领域技术人员重点关注的。
发明内容
本申请的目的是提供一种紫外LED器件，提高紫外LED器件对紫外光线的反射率和利用率，简化制作工艺。
为解决上述技术问题，本申请提供一种紫外LED器件，包括：
上表面和下表面分别设置有焊盘的基板；
紫外LED芯片；
连接所述紫外LED芯片与位于所述上表面的所述焊盘的芯片固定部；
位于所述焊盘的上表面且在所述芯片固定部外侧的高反射介质层；
与所述基板相连的杯罩式透镜，与所述基板形成容纳所述紫外LED芯片的腔体。
可选的，所述高反射介质层为铝介质层或特氟龙介质层。
可选的，所述杯罩式透镜为球形杯罩式透镜。
可选的，当所述紫外LED芯片为正装芯片时，还包括：
用于连接所述紫外LED芯片和位于所述基板的所述上表面的所述焊盘的导线。
可选的，所述导线为金线。
可选的，所述基板为氮化铝陶瓷基板或者氧化铝陶瓷基板。
可选的，所述腔体中填充有氮气或者惰性气体。
可选的，所述杯罩式透镜为石英玻璃杯罩式透镜。
可选的，还包括：
位于所述基板的上表面且在所述焊盘四周的第一共晶焊接层；
与所述第一共晶焊接层共晶连接的支架，且所述支架的内表面分布有所述高反射介质层；
位于所述支架的上表面的第二共晶焊接层；
相应的，所述杯罩式透镜为板状透镜，所述板状透镜与所述第二共晶焊接层共晶连接。
可选的，所述板状透镜为JGS2玻璃透镜。
本申请所提供的一种紫外LED器件，包括：上表面和下表面分别设置有焊盘的基板；紫外LED芯片；连接所述紫外LED芯片与位于所述上表面的所述焊盘的芯片固定部；位于所述焊盘的上表面且在所述芯片固定部外侧的高反射介质层；与所述基板相连的杯罩式透镜，与所述基板形成容纳所述紫外LED芯片的腔体。
可见，本申请中的紫外LED器件中基板上表面的焊盘上设置有芯片固定部，并利用该芯片固定部将紫外LED芯片固定，在芯片固定部的外围且在基板上表面的焊盘上设置有高反射介质层，避免设置镀金层，可以有效 提高紫外光线的反射率，减少紫外LED器件对紫外光线的吸收，并且透镜为杯罩式透镜，直接与基板相连形成容纳外LED芯片的腔体，无需在基板上设置框架，避免框架对紫外光线的吸收，将原本照射在框架位置的紫外光线通过杯罩式透镜导出至外界，提高紫外光线的利用率，同时简化紫外LED器件的制作工艺，降低成本。
附图说明
为了更清楚的说明本申请实施例或现有技术的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单的介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为现有技术中紫外LED器件的结构示意图；
图2为不同金属对光线的反射率；
图3为本申请实施例所提供的一种紫外LED器件的结构示意图；
图4为本申请实施例所提供的一种紫外LED器件的俯视图；
图5为本申请实施例所提供的一种紫外LED器件的结构示意图；
图6为本申请实施例所提供的另一种紫外LED器件的俯视图；
图7为本申请实施例所提供的另一种紫外LED器件的结构示意图；
图中，1.基板，2.焊盘，3.紫外LED芯片，4.芯片固定部，5.高反射介质层，6.杯罩式透镜，7.腔体，8.平面式透镜，9.框架，10.第一共晶焊接层，11.支架，12.第二共晶焊接层，13.板状透镜。
具体实施方式
为了使本技术领域的人员更好地理解本申请方案，下面结合附图和具体实施方式对本申请作进一步的详细说明。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
在下面的描述中阐述了很多具体细节以便于充分理解本发明，但是本发明还可以采用其他不同于在此描述的其它方式来实施，本领域技术人员可以在不违背本发明内涵的情况下做类似推广，因此本发明不受下面公开的具体实施例的限制。
正如背景技术部分所述，现有的紫外LED器件采用基板与框架结合的结构，制作工艺复杂，并且在基板和框架的表面需要镀金或银，在基板和框架的表面需要镀金或银，大量紫外光线被LED器件内部表面材质金或银所吸收，或无法有效发射至发光面角度，造成极大的资源浪费和性能浪费。
有鉴于此，本申请提供了一种紫外LED器件，请参见图3和图4，图3为本申请实施例所提供的一种紫外LED器件的结构示意图，图4为本申请实施例所提供的一种紫外LED器件的俯视图，包括：
上表面和下表面分别设置有焊盘2的基板1；
紫外LED芯片3；
连接所述紫外LED芯片3与位于所述上表面的所述焊盘2的芯片固定部4；
位于所述焊盘2的上表面且在所述芯片固定部4外侧的高反射介质层5；
与所述基板1相连的杯罩式透镜6，与所述基板1形成容纳所述紫外LED芯片3的腔体7。
需要说明的是，高反射介质层5所在的焊盘2为位于基板1上表面的焊盘2，即在该焊盘2的上表面除了芯片固定部4所在区域的其他区域设置有高反射介质层5，避免对紫外光线的吸收，在保证紫外LED器件性能和可靠性的同时，增加紫外光线反射率。其中，焊盘2一般为铜焊盘2。
高反射介质层5指对紫外光线的反射率在80％以上的介质层，优选地，所述高反射介质层5为铝介质层或特氟龙介质层，可以进一步降低紫外LED器件的成本。
杯罩式透镜6通过粘结介质与基板1的上表面相连，本申请中对粘结介质不做具体限定，只要保证杯罩式透镜6与基板1相连可以形成封闭的腔体7即可。例如，粘结介质可以为硅胶，或者环氧胶等等。
芯片固定部4的大小根据不同的紫外LED芯片3尺寸设置，与紫外LED芯片3保持一致。紫外LED芯片3包括衬底层、缓冲层、N型AlGaN层、负电极、量子阱层、P型AlGaN层、接触层和正电极，具体结构已为本领域技术人员所熟知，此处不再详细阐述。
具体的，当紫外LED芯片3为倒装LED芯片时，芯片固定部4为金固定部，以增加紫外LED芯片3与焊盘2的连接牢固性。当所述紫外LED芯片3为正装芯片时，还包括：用于连接所述紫外LED芯片3和位于所述基板1的所述上表面的所述焊盘2的导线，导线实现紫外LED芯片3的正负电极与焊盘2的电连接。
可选的，所述导线为金线，但本申请对此并不做具体限定，导线还可以为银线、铜线或合金导线等等。
在本申请的一个实施例中，所述基板1为氮化铝陶瓷基板1，但本申请对此并不做具体限定，在本申请的其他实施例中，基板1还可以为氧化铝陶瓷基板1。
可选的，所述杯罩式透镜6为石英玻璃杯罩式透镜6、钠钙玻璃杯罩式透镜6、硼硅玻璃杯罩式透镜6等中的任一种。
本申请中的紫外LED器件中基板1上表面的焊盘2上设置有芯片固定部4，并利用该芯片固定部4将紫外LED芯片3固定，在芯片固定部4的外围且在基板1上表面的焊盘2上设置有高反射介质层5，避免设置镀金层，可以有效提高紫外光线的反射率，减少紫外LED器件对紫外光线的吸收，并且透镜为杯罩式透镜6，直接与基板1相连形成容纳外LED芯片的腔体7，无需在基板1上设置框架，避免框架对紫外光线的吸收，将原本照射在框架位置的紫外光线通过杯罩式透镜6导出至外界，提高紫外光线的利用率，同时简化紫外LED器件的制作工艺，降低成本。
在上述任一实施例的基础上，在本申请的一个实施例中，所述杯罩式透镜6为球形杯罩式透镜6，可以实现紫外光线不同的出射角度，紫外LED器件的另一种结构示意图请参见图5。
在上述任一实施例的基础上，在本申请的一个实施例中，所述腔体7中填充有氮气或者惰性气体，以保护紫外LED芯片3，延长紫外LED器 件的使用寿命。进一步地，本申请中对惰性气体的种类不做具体限定，可视情况而定，例如，惰性气体可以为氦气或者氩气等。
请参考图6和图7，图6为本申请实施例所提供的另一种紫外LED器件的俯视图，图7为本申请实施例所提供的另一种紫外LED器件的结构示意图。在上述实施例的基础上，在本申请的一个实施例中，紫外LED器件还包括：
位于所述基板1的上表面且在所述焊盘2四周的第一共晶焊接层10；
与所述第一共晶焊接层10共晶连接的支架11，且所述支架11的内表面分布有所述高反射介质层5；
位于所述支架11的上表面的第二共晶焊接层12；
相应的，所述杯罩式透镜6为板状透镜13，所述板状透镜13与所述第二共晶焊接层12共晶连接。
可选的，焊盘上表面的高反射介质层可以设置为方形。
在支架11的内表面分布有高反射介质层，即在支架11内表面分布有铝介质层或特氟龙介质层，与位于焊盘上表面的高反射介质层共同形成一个反射腔体，以增强对紫外光线的反射。本申请中对支架11的反射角度不做具体限定，根据出光角度的需求进行设置。
可选的，支架11为硅支架11。
本实施例中的紫外LED器件中，支架11与基板之间、支架11与板状透镜13之间分别通过第一共晶焊接层10、第二共晶焊接层12连接，既实现了无级封装，又大大提高了紫外LED器件密封性和可靠性，提升紫外LED器件的使用寿命。
优选地，所述板状透镜13为JGS2玻璃透镜，JGS2玻璃透镜可以进一步减少对紫外光线的吸收，相较于传统紫外LED器件，对紫外光线的反射率和使用率可以提高50％以上。
本说明书中各个实施例采用递进的方式描述，每个实施例重点说明的都是与其它实施例的不同之处，各个实施例之间相同或相似部分互相参见即可。对于实施例公开的装置而言，由于其与实施例公开的方法相对应， 所以描述的比较简单，相关之处参见方法部分说明即可。
以上对本申请所提供的紫外LED器件进行了详细介绍。本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想。应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以对本申请进行若干改进和修饰，这些改进和修饰也落入本申请权利要求的保护范围内。

Claims (10)

  1. 一种紫外LED器件，其特征在于，包括：
    上表面和下表面分别设置有焊盘的基板；
    紫外LED芯片；
    连接所述紫外LED芯片与位于所述上表面的所述焊盘的芯片固定部；
    位于所述焊盘的上表面且在所述芯片固定部外侧的高反射介质层；
    与所述基板相连的杯罩式透镜，与所述基板形成容纳所述紫外LED芯片的腔体。
  2. 如权利要求1所述的紫外LED器件，其特征在于，所述高反射介质层为铝介质层或特氟龙介质层。
  3. 如权利要求1或2所述的紫外LED器件，其特征在于，所述杯罩式透镜为球形杯罩式透镜。
  4. 如权利要求3所述的紫外LED器件，其特征在于，当所述紫外LED芯片为正装芯片时，还包括：
    用于连接所述紫外LED芯片和位于所述基板的所述上表面的所述焊盘的导线。
  5. 如权利要求4所述的紫外LED器件，其特征在于，所述导线为金线。
  6. 如权利要求5所述的紫外LED器件，其特征在于，所述基板为氮化铝陶瓷基板或者氧化铝陶瓷基板。
  7. 如权利要求6所述的紫外LED器件，其特征在于，所述腔体中填充有氮气或者惰性气体。
  8. 如权利要求7所述的紫外LED器件，其特征在于，所述杯罩式透镜为石英玻璃杯罩式透镜。
  9. 如权利要求1所述的紫外LED器件，其特征在于，还包括：
    位于所述基板的上表面且在所述焊盘四周的第一共晶焊接层；
    与所述第一共晶焊接层共晶连接的支架，且所述支架的内表面分布有所述高反射介质层；
    位于所述支架的上表面的第二共晶焊接层；
    相应的，所述杯罩式透镜为板状透镜，所述板状透镜与所述第二共晶焊接层共晶连接。
  10. 如权利要求9所述的紫外LED器件，其特征在于，所述板状透镜为JGS2玻璃透镜。
PCT/CN2020/100110 2020-04-17 2020-07-03 一种紫外led器件 WO2021208264A1 (zh)

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