CN102834937B - 具有电流扩展层的发光二极管芯片 - Google Patents

具有电流扩展层的发光二极管芯片 Download PDF

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Publication number
CN102834937B
CN102834937B CN201180018587.3A CN201180018587A CN102834937B CN 102834937 B CN102834937 B CN 102834937B CN 201180018587 A CN201180018587 A CN 201180018587A CN 102834937 B CN102834937 B CN 102834937B
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Prior art keywords
current spreading
layer
spreading layer
led chip
type semiconductor
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Chinese (zh)
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CN102834937A (zh
Inventor
彼得鲁斯·松德格伦
埃尔马·鲍尔
马丁·霍厄纳德勒
克莱门斯·霍夫曼
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/8242—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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CN201180018587.3A 2010-04-12 2011-04-08 具有电流扩展层的发光二极管芯片 Active CN102834937B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510504954.0A CN105206731B (zh) 2010-04-12 2011-04-08 具有电流扩展层的发光二极管芯片

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102010014667.6 2010-04-12
DE102010014667A DE102010014667A1 (de) 2010-04-12 2010-04-12 Leuchtdiodenchip mit Stromaufweitungsschicht
PCT/EP2011/055566 WO2011128277A1 (de) 2010-04-12 2011-04-08 Leuchtdiodenchip mit stromaufweitungsschicht

Related Child Applications (1)

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CN102834937A CN102834937A (zh) 2012-12-19
CN102834937B true CN102834937B (zh) 2015-08-26

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CN201510504954.0A Active CN105206731B (zh) 2010-04-12 2011-04-08 具有电流扩展层的发光二极管芯片

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US (2) US20130126920A1 (enExample)
EP (2) EP2559076B1 (enExample)
JP (2) JP5943904B2 (enExample)
KR (1) KR20130060189A (enExample)
CN (2) CN102834937B (enExample)
DE (1) DE102010014667A1 (enExample)
WO (1) WO2011128277A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105206731A (zh) * 2010-04-12 2015-12-30 欧司朗光电半导体有限公司 具有电流扩展层的发光二极管芯片

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DE102013100818B4 (de) 2013-01-28 2023-07-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
EP2903027B1 (de) 2014-01-30 2018-08-22 AZUR SPACE Solar Power GmbH LED-Halbleiterbauelement
JP2016054260A (ja) 2014-09-04 2016-04-14 株式会社東芝 半導体発光素子
DE102015011635B4 (de) 2015-09-11 2020-10-08 Azur Space Solar Power Gmbh lnfrarot-LED
DE102015118041A1 (de) 2015-10-22 2017-04-27 Osram Opto Semiconductors Gmbh Leuchtdiodenchip und Verfahren zur Herstellung eines Leuchtdiodenchips
DE102017101637A1 (de) * 2017-01-27 2018-08-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102017104144B9 (de) * 2017-02-28 2022-03-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung von Leuchtdioden
TWI635626B (zh) * 2017-10-19 2018-09-11 友達光電股份有限公司 發光裝置
US11942507B2 (en) 2020-03-11 2024-03-26 Lumileds Llc Light emitting diode devices
US11569415B2 (en) 2020-03-11 2023-01-31 Lumileds Llc Light emitting diode devices with defined hard mask opening
US11735695B2 (en) 2020-03-11 2023-08-22 Lumileds Llc Light emitting diode devices with current spreading layer
US11848402B2 (en) * 2020-03-11 2023-12-19 Lumileds Llc Light emitting diode devices with multilayer composite film including current spreading layer
US20210288222A1 (en) * 2020-03-11 2021-09-16 Lumileds Llc Light Emitting Diode Devices With Common Electrode
CN113793887B (zh) * 2021-08-24 2025-03-25 天津三安光电有限公司 Led外延结构及其制备方法、led芯片及其制备方法
CN116978999B (zh) * 2023-09-22 2024-01-02 南昌凯捷半导体科技有限公司 一种电流限域Micro-LED芯片及其制作方法

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JP2004356601A (ja) * 2003-03-31 2004-12-16 Hitachi Cable Ltd 発光ダイオード
JP2006287223A (ja) * 2005-03-31 2006-10-19 Osram Opto Semiconductors Gmbh 放射放出半導体チップおよびこの形式の半導体チップに対する半導体基体の製造方法
CN101681958A (zh) * 2007-04-26 2010-03-24 奥斯兰姆奥普托半导体有限责任公司 光电子半导体本体及其制造方法

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US6426518B1 (en) * 1999-01-05 2002-07-30 Rohm Co., Ltd. Semiconductor light emitting device
JP2004356601A (ja) * 2003-03-31 2004-12-16 Hitachi Cable Ltd 発光ダイオード
JP2006287223A (ja) * 2005-03-31 2006-10-19 Osram Opto Semiconductors Gmbh 放射放出半導体チップおよびこの形式の半導体チップに対する半導体基体の製造方法
CN101681958A (zh) * 2007-04-26 2010-03-24 奥斯兰姆奥普托半导体有限责任公司 光电子半导体本体及其制造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105206731A (zh) * 2010-04-12 2015-12-30 欧司朗光电半导体有限公司 具有电流扩展层的发光二极管芯片
US9853188B2 (en) 2010-04-12 2017-12-26 Osram Opto Semiconductors Gmbh Light-emitting diode chip with current spreading layer
CN105206731B (zh) * 2010-04-12 2018-01-19 欧司朗光电半导体有限公司 具有电流扩展层的发光二极管芯片

Also Published As

Publication number Publication date
KR20130060189A (ko) 2013-06-07
EP2559076B1 (de) 2016-09-21
US9853188B2 (en) 2017-12-26
JP2013524547A (ja) 2013-06-17
JP5943904B2 (ja) 2016-07-05
EP3131127B1 (de) 2018-01-31
WO2011128277A1 (de) 2011-10-20
EP3131127A1 (de) 2017-02-15
CN102834937A (zh) 2012-12-19
US20130126920A1 (en) 2013-05-23
DE102010014667A1 (de) 2011-10-13
JP6124973B2 (ja) 2017-05-10
EP2559076A1 (de) 2013-02-20
CN105206731A (zh) 2015-12-30
US20150357516A1 (en) 2015-12-10
JP2016048785A (ja) 2016-04-07
CN105206731B (zh) 2018-01-19

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