CN102834906B - 微电子封装结构及形成微电子封装结构的方法 - Google Patents

微电子封装结构及形成微电子封装结构的方法 Download PDF

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CN102834906B
CN102834906B CN201180017148.0A CN201180017148A CN102834906B CN 102834906 B CN102834906 B CN 102834906B CN 201180017148 A CN201180017148 A CN 201180017148A CN 102834906 B CN102834906 B CN 102834906B
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carrier material
tube core
coreless substrate
functional supports
package structures
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CN102834906A (zh
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R·K·纳拉
H·R·阿兹米
J·S·古扎克
J·S·冈萨雷斯
D·W·德莱尼
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Intel Corp
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Abstract

记载了一种形成微电子封装结构的方法和由此形成的相关结构。这些方法可包括：将管芯附连于载体材料，其中载体材料包括由蚀刻停止层隔开的顶层和底层；与管芯毗邻地形成绝缘材料，通过在介电材料上堆积多个层而形成无芯衬底，并随后从底层载体材料上去除顶层载体材料和蚀刻停止层。

Description

微电子封装结构及形成微电子封装结构的方法
发明背景
随着较高处理器性能的半导体技术进步，封装架构的进步可包括无芯无焊点堆积层(BBUL-C)封装件架构以及其它这类组成。BBUL-C封装件的当前工艺流程涉及在包覆以铜箔的临时芯/载体上构筑衬底，在封装件从芯分离后，该铜箔被蚀刻掉。
附图简述
尽管说明书以特别指出和清楚要求本发明某些实施例的权利要求书作为结束，然而当结合附图阅读时本发明的优点能从本发明下面的描述中更容易地确定，在附图中：
图1a-1h示出形成根据本发明一实施例的结构的方法。
图2a-2e示出形成根据本发明一实施例的结构的方法。
图3示出根据本发明一实施例的系统。
发明详述
在下面的详细描述中，各附图被给予附图标记，这些附图标记借助示例示出了可将这些方法投入实践的具体实施例。这些实施例被足够详细地描述以允许本领域内技术人员能将这些实施例用于实践。要理解尽管各实施例是不同的，但不一定是互斥的。例如，本文结合一个实施例所描述的具体特征、结构或特性可实现在其它实施例中而不脱离这些实施例的精神和范围。另外要理解，可改变每个披露的实施例中的各要素的位置或排列而不脱离这些实施例的精神和范围。下面的详细说明因此不被认为是限定的意思，并且这些实施例的范围仅由所附权利要求书定义，连同权利要求书所赋予的等效物的全部范围作出适当解释。在附图中，相同的附图标记在若干图中表示相同或相似的功能性。
描述了形成和利用微电子结构(例如封装件结构)的方法和相关结构。这些方法可包括：将管芯附连于载体材料，其中载体材料包括由蚀刻停止层隔开的顶层和底层；与管芯毗邻地形成绝缘材料；通过在绝缘材料上堆积多个层来形成无芯衬底；并随后从底层载体材料去除顶层载体材料和蚀刻停止层。这些实施例的方法允许载体材料功能化以形成功能化载体结构，例如EMI屏蔽、硬化结构、热扩散器、电感器以及PoP焊区结构。
图1a-1h示出形成微电子结构(例如封装件结构)的方法的实施例。图1a示出载体材料100、100’。在一个实施例中，载体材料100可包括可用作载体(例如微电子管芯载体)的多层铜箔。在其它实施例中，载体材料可包括任何适合的导电载体材料100。在一个实施例中，载体材料100可包括两个层，如图所示的顶层100和底层100’，但在其它实施例中也可包括一个层或两个以上的层。
在一个实施例中，载体材料100可包括两个导电材料层，所述导电材料例如但不局限于铜，该导电材料层可通过薄蚀刻阻挡(停止)层102隔开。在一个实施例中，蚀刻停止层102可包括例如镍的材料，但也可包括可用来包含蚀刻停止层以利于停止载体层之间蚀刻的任何这种材料。在一个实施例中，蚀刻停止层102可用来帮助形成空腔104(图1b)，尤其是例如在蚀刻工艺过程中。在一个实施例中，底部载体材料底层100’的厚度103可由接下来的组装步骤中将要嵌入到载体材料100’中的管芯的厚度和嵌入深度规定。
空腔104可形成在载体材料的一个层中，例如通过去除底部载体材料底层100’的一部分。空腔104可利用任何适当的去除工艺来形成，例如业内已知的那些蚀刻工艺。例如，可将掩模材料层压在载体材料100’的底层上，并可对载体材料100’布图以形成空腔104，管芯可随后放置到该空腔104内。载体材料层100、100’之间的蚀刻停止层102可用作空腔104成形的蚀刻停止结构，并可界定一平坦表面以使管芯置于其上。如此形成的空腔104可包括底部101、斜角部105以及顶部107，其中顶部包括蚀刻停止层102的一部分。
在其它实施例中，可形成空腔104，载体材料100的底部可保持基本平坦，如图1c所示。在一实施例中，例如微电子管芯106的管芯例如可附连在空腔104内(图1c)。在一实施例中，管芯106可包括薄管芯106，并可包括低于约150微米的厚度。在一实施例中，管芯106可附连于空腔104的顶部107。在一实施例中，管芯106可包括至少一个侧壁108、后侧111和作用侧112。在一实施例中，管芯106的背侧111可直接设置在每个蚀刻停止层102在空腔104内的一部分上。在某些情形下，可使用粘合剂薄膜(未示出)和/或附连工艺来将管芯106附连在载体材料100’的空腔104内。在一实施例中，例如铜的载体材料可加工成粗糙的以帮助管芯106的附连。
在一实施例中，粘合剂薄膜可用作最终封装件的永久性部分以保护管芯106的背侧111，从而提供用于标记的表面和/或例如管理可能发生在管芯106中的任何翘曲。在一实施例中，粘合剂可包括背侧薄膜(DBF)，该背侧薄膜(DBF)可在部署前施加于管芯106的背侧111。DBF可例如用金属微粒(例如铜或银)填充，当随后连接至热扩散装置(例如微沟道散热器)时提高传导性。
绝缘材料110可形成在载体材料100’上并与形成在载体材料100’的空腔104内的管芯106毗邻(图1d)。在一实施例中，绝缘材料110可例如通过层压工艺形成。绝缘材料110可形成在空腔104的底部101上、形成在空腔104的斜角部105上以及形成在载体材料100’围绕管芯106的空腔104的顶部107的一部分上。绝缘材料110可提供用于后继堆积工艺的水平面。在一个实施例中，可在层压前将载体材料100’加工成粗糙的以有助于粘附到绝缘材料110。
在一实施例中，可在管芯106的管芯面积焊区内的绝缘材料110中形成通孔113，其中管芯焊盘，例如铜管芯焊盘，可露出在管芯106的作用侧112(图1e)。在一实施例中，可使用半加性工艺(SAP)在管芯106的管芯焊盘上形成管芯焊盘互连结构112，并且第一金属层114可形成在与管芯106毗邻的绝缘材料110上(图1f)。随后可使用例如标准衬底SAP堆积处理来形成接下来的那些层，其中可通过利用堆积工艺在彼此之上形成额外的绝缘层110’和金属化层114’以形成无芯封装件结构120的无芯衬底部分116(图1g)。在一实施例中，无芯封装件结构120可包括BBUL无芯封装件结构120，并且管芯106可完全地嵌入到无芯封装件120内，其中完全地嵌入指管芯106不经由空腔104地直接地附连于层110’的工艺。
在一实施例中，当堆积结束时，可去除顶部载体材料100和蚀刻停止层102，使附连于无芯封装件结构120的底部载体材料100’露出(图1h)。在一些情形下，载体材料100’可经过化学处理以减少未来的氧化。在一实施例中，底部载体材料100’可被布图以形成至少一个功能化载体结构100’。在一实施例中，功能化载体结构100’设置至无芯封装件结构120的某一深度122。可形成功能化载体材料100’以实现各种功能。例如，在一实施例中，保持在无芯封装件120之上/之内的载体材料100’可充当加固结构100’。在某些情形下，无芯衬底部分116可直接堆积在加固结构/功能化载体结构100’上而无需任何外部增设的宏观粘合附连。在一实施例中，无芯封装件衬底120可进一步包括例如球栅阵列(BGA)球的互连结构125，该互连结构125可附连至封装件结构120。
在一实施例中，通过调整合适的材料性质，管芯106周围的载体材料100’(在某些情形下可包括铜环)的存在能减轻无芯封装件结构120的翘曲。在一些现有技术的无芯BBUL封装件结构中，可采用非常小的形状因数(～12×12mm)的产品。由于加固结构附连的封装后制造会增加封装件成本，因此较大形状因数的产品得益于将加固结构100’增设至BBUL封装件结构120而不会增加额外的封装后成本。因此，这里实施例的加固结构允许将这种技术扩展至对成本更敏感的市场/体系，例如低z高度移动CPU的芯片集。在其它实施例中，载体材料100’可功能化/构形以起到若干附加的功能，例如但不局限于热扩散器、EMI(电磁干扰)屏蔽等的成形。在一实施例中，至少一个功能化载体结构100’的顶表面115与无芯无焊点堆积封装件120的顶表面113共面，并与管芯106的后侧111共面。
在其它实施例中，可使用半加性工艺在管芯206的管芯焊盘上形成管芯焊盘互连结构212，并且第一金属层214可形成在与管芯206毗邻的绝缘材料210上(图2a)。通孔215可形成在管芯区外侧(非管芯区)以连接至载体底层200’，其中蚀刻停止层202可设置在载体底层200’上，并且载体顶层200可设置在蚀刻停止层202上(图2a)。
然后可使用标准衬底SAP堆积方法来形成接下来的层，从而形成封装件220的剩余部分，其中可通过利用堆积工艺在彼此之上形成额外的绝缘层210’和金属化层214’以形成无芯封装件结构220的无芯衬底部分216(图2b)。在一实施例中，无芯封装件结构220可包括BBUL无芯封装件结构220。在一实施例中，可去除载体材料200的顶层和蚀刻停止层202(图2c)。然后可对底层200’布图以形成电感器结构201。在一实施例中，可将干膜叠置到载体材料底层200上并完成减损布图以形成电感器结构201。在某些情形下，可完成对环氧树脂材料的附加化学处理或过模制以保护电感器结构201不受机械和环境损害。
图2d示出螺旋电感器结构201的俯视图，该螺旋电感器结构201图示为在管芯206的任一侧，通孔在其下方并具有起点和终点以将它们电连接至封装件220(通孔未示出)。在另一实施例中，在载体材料200的顶层和蚀刻停止层202被去除之后，可对载体材料底层200’布图以与管芯206毗邻地形成PoP(封装件叠层)焊区结构203(图2e)。在一实施例中，可将干膜叠置到载体材料200’的顶层上并执行减损布图以形成POP结构203。
在一些情形下，可执行额外的处理以在PoP结构203的顶部上形成要求的表面精加工形状。本实施例的优势在于PoP焊盘203的顶表面231与管芯206的顶表面(背侧)230平齐/共面，这提供增大的Z-高度和将另一封装件附连于无芯封装件结构220的能力。
图3示出根据本发明一实施例的计算机系统。系统300包括处理器310、存储器设备320、存储器控制器330、图形控制器340、输入和输出(I/O)控制器350、显示器352、键盘354、定点设备356以及外围设备358，在一些实施例中，所有这些部件可通过总线360可通信地彼此耦合。处理器310可以是通用处理器或专用集成电路(ASIC)。I/O控制器350可包括用于有线或无线通信的通信模块。存储器设备320可以是动态随机存取存储器(DRAM)设备、静态随机存取存储器(SRAM)设备、闪存设备或这些存储器设备的组合。因此，在一些实施例中，系统300中的存储器设备320不一定要包括DRAM设备。
系统300中示出的部件中的一个或多个可包含在一个或多个集成电路封装件中，和/或包括一个或多个集成电路封装件，所述一个或多个集成电路封装件例如是包括图1h、2c和2e的功能化载体材料的封装件结构。例如，处理器310或存储器设备320或I/O控制器350的至少一部分或这些部件的组合可包含在集成电路封装件中，该集成电路封装件包括结构的至少一个实施例，例如这里给出在各实施例中描述的各种功能性载体材料结构。
这些元件执行它们在业内已知的传统功能。具体地说，存储器设备320在一些情形下可用于提供可执行指令的长期存储，所述可执行指令对应于形成根据本发明实施例的封装结构的方法，但在其它实施例中，存储器设备320可用来在较短期的基础上存储在由处理器310执行期间用于形成根据本发明的实施例的封装件结构的方法的可执行指令。另外，这些指令可存储于、或以其它方式关联于与系统可通信耦合的机器可访问介质，例如压缩盘只读存储器(CD-ROM)、数字多功能盘(DVD)、软盘、载波和/或其它传播的信号。在一个实施例中，存储器设备320可向处理器310提供可执行指令以供执行。
系统300可包括计算机(例如台式机、膝上计算机、手持计算机、服务器、网络设施、路由器等)、无线通信设备(例如蜂窝电话、无绳电话、寻呼机、个人数字助理等)、计算机关联的外设(例如打印机、扫描仪、监视器等)、娱乐设备(例如电视、无线电、立体声设备、磁带和压缩盘播放机、卡带录像机、可携式摄像机、数字摄像机、MP3(运动图象专家组、音频层3)播放机、视频游戏、手表等)及其它。
这些实施例的益处使一种新的封装架构变得可能，这种新的封装架构能以当前封装件架构的大约一半成本满足未来的移动/手持片上系统(SoC)处理器的设计需求。各实施例允许添加翘曲改善加固结构、EMI屏蔽、电感器结构、PoP焊区结构和热扩散器而无需额外的封装后制造成本。各实施例的PoP焊区结构能形成额外的益处而不需要中介物以顾及封装件中的管芯厚度。
无芯BBUL封装件的现有技术工艺流程通常涉及在包覆以铜箔的临时内芯/载体上构筑衬底，在封装件从内芯分离之后，该铜箔被蚀刻去除。这里的实施例包括方法，所述方法使载体上的载体材料/铜箔功能化以作为例如热扩散器、翘曲改善结构、RF部件的电磁干扰(EMI)屏蔽，从而形成封装件叠层(POP)应用中的焊盘等，由此降低成本和增加吞吐量。
尽管前面的描述已规定了可在本发明的方法中使用的某些步骤和材料，然而本领域内技术人员将理解可作出许多修正和替代。因此，希望使所有这些修正、变化、替代和添加落在如由所附权利要求书定义的本发明的精神和范围内。另外要理解，诸如封装件结构的多种微电子结构是业内公知的。因此，这里给出的附图仅示出示例性微电子设备与本发明的实践有关的一些部分。因此本发明不局限于这里描述的结构。

Claims (29)

1.一种形成微电子封装结构的方法，包括：
在载体材料中形成空腔，其中所述载体材料包括由蚀刻停止层隔开的顶层和底层；
将管芯附连在所述空腔内；
与所述管芯毗邻地并在所述载体材料底层上形成绝缘材料；
通过在所述绝缘材料上堆积多个层来形成无芯衬底；
从所述载体材料的底层去除所述载体材料顶层和蚀刻停止层，同时所述载体材料的底层保持附连于所述无芯衬底；以及
对所述载体材料的底层布图以形成至少一个功能化载体结构。
2.如权利要求1所述的方法，其特征在于，所述至少一个功能化载体结构包括热扩散器、EMI屏蔽结构和加固结构中的至少一者。
3.如权利要求2所述的方法，其特征在于，所述加固结构包括在所述管芯周围的铜环。
4.如权利要求1所述的方法，其特征在于，还包括当所述载体材料顶层和蚀刻停止层位于所述无芯衬底上时将所述载体材料顶层和蚀刻停止层去除。
5.如权利要求3所述的方法，其特征在于，所述加固结构不采用粘附剂地附连于所述衬底。
6.如权利要求1所述的方法，其特征在于，所述载体材料包括铜。
7.如权利要求1所述的方法，其特征在于，所述无芯衬底包括一部分无芯、无焊点的堆积层封装件。
8.一种形成微电子封装结构的方法，包括：
将管芯附连于载体材料，其中所述载体材料包括由蚀刻停止层隔开的顶层和底层；
与所述管芯毗邻地并在所述载体材料的底层上形成绝缘材料；
在所述管芯区内形成管芯焊盘互连结构；
在非管芯区内形成通孔以与所述底层载体材料相连；
通过在所述绝缘材料上堆积多个层来形成无芯衬底；以及
从所述底层载体材料去除所述顶层载体材料和蚀刻停止层，同时所述载体材料的底层保持附连于所述无芯衬底；以及
对所述载体材料的底层布图以形成至少一个功能化载体结构。
9.如权利要求8所述的方法，其特征在于，还包括对所述底层载体材料布图以形成电感器和PoP焊区结构中的至少一者。
10.如权利要求8所述的方法，其特征在于，所述底层载体材料不采用粘合剂地附连于所述无芯封装件。
11.如权利要求8所述的方法，其特征在于，所述无芯衬底包括一部分无芯、无焊点的堆积层封装件。
12.如权利要求9所述的方法，其特征在于，所述PoP焊区结构的顶表面与所述无芯无焊点堆积封装件的顶表面共面。
13.一种微电子封装结构，包括：
嵌入到无芯衬底中的管芯；
与所述管芯毗邻的绝缘材料；
设置在所述管芯的管芯焊盘区内的管芯焊盘互连结构；以及
设置在所述无芯衬底中的至少一个功能化载体结构，所述至少一个功能化载体结构是通过处理所述管芯的载体材料而形成的，所述载体材料包括由蚀刻停止层隔开的顶层和底层，所述处理包括从所述载体材料去除所述载体材料顶层和蚀刻停止层同时保持所述载体材料的底层，并对所述载体材料的底层布图以形成至少一个功能化载体结构，其中所述至少一个功能化载体结构的顶表面与所述无芯衬底的顶表面共面。
14.如权利要求13所述的微电子封装结构，其特征在于，所述至少一个功能化结构包括铜材料。
15.如权利要求13所述的微电子封装结构，其特征在于，所述无芯衬底包括一部分无芯无焊点堆积封装件结构。
16.如权利要求13所述的微电子封装结构，其特征在于，所述至少一个功能化载体结构包括加固结构、热扩散器和EMI屏蔽中的至少一者。
17.如权利要求13所述的微电子封装结构，其特征在于，所述功能化载体结构不采用粘合剂地附连于所述无芯封装件。
18.如权利要求17所述的微电子封装结构，其特征在于，所述功能化载体结构包括铜。
19.如权利要求15所述的微电子封装结构，其特征在于，所述管芯与所述功能化载体结构的顶表面共面，并且所述管芯被完全嵌入到所述无芯衬底中。
20.一种微电子封装结构，包括：
嵌入到无芯衬底中的管芯；
与所述管芯毗邻的绝缘材料；
设置在所述管芯的管芯焊盘区内的管芯焊盘互连结构；
设置在非管芯区内的无芯衬底中的通孔，所述通孔与功能化载体结构相连，其中所述功能化载体结构被设置在所述无芯衬底中，所述功能化载体结构是通过处理所述管芯的载体材料而形成的，所述载体材料包括由蚀刻停止层隔开的顶层和底层，所述处理包括从所述载体材料去除所述载体材料顶层和蚀刻停止层同时保持所述载体材料的底层，并对所述载体材料的底层布图以形成所述功能化载体结构，并且所述功能化载体结构的顶表面与所述无芯衬底的顶表面共面。
21.如权利要求20所述的微电子封装结构，其特征在于，所述功能化载体结构包括铜材料。
22.如权利要求20所述的微电子封装结构，其特征在于，所述无芯衬底包括一部分无芯无焊点堆积封装件结构。
23.如权利要求20所述的微电子封装结构，其特征在于，所述功能化载体结构包括电感器和PoP焊区结构中的至少一者。
24.如权利要求23所述的微电子封装结构，其特征在于，所述PoP焊区结构的顶表面与所述无芯无焊点堆积封装件的顶表面共面。
25.如权利要求24所述的微电子封装结构，其特征在于，所述无芯无焊点堆积封装件不包括中介物。
26.如权利要求23所述的微电子封装结构，其特征在于，所述至少一个电感器包括与所述管芯毗邻的至少一个螺旋电感器，所述至少一个螺旋电感器的顶表面与所述管芯的顶表面共面。
27.如权利要求20所述的微电子封装结构，其特征在于，还包括一系统，所述系统包括：
通信地耦合至所述结构的总线；以及
通信地耦合至所述总线的DRAM。
28.如权利要求20所述的微电子封装结构，其特征在于，所述管芯与所述功能化载体结构的顶表面共面，并且所述管芯被完全嵌入到所述无芯衬底中。
29.如权利要求20所述的微电子封装结构，其特征在于，所述功能化载体结构不采用粘合剂地附连于所述无芯封装件。
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