TWM249376U - Image sensor with low noise - Google Patents
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- TWM249376U TWM249376U TW92219717U TW92219717U TWM249376U TW M249376 U TWM249376 U TW M249376U TW 92219717 U TW92219717 U TW 92219717U TW 92219717 U TW92219717 U TW 92219717U TW M249376 U TWM249376 U TW M249376U
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- 239000010410 layer Substances 0.000 claims description 85
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 4
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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- Solid State Image Pick-Up Elements (AREA)
Description
M249376M249376
四'創作說明（1) 【新型所屬之技術領域】 特別係有關於一種 本創作係有關於一種影像感測器 低雜訊之影像感測器。 【先前技術】 電子訊號在傳輸過程，多少都會受到一些不需要的額 外能量的干擾，此額外能量即是所謂的雜M^n〇ise〕， 雜訊的干擾，通常都會造成訊號的失真，Four 'Creation Instructions (1) [Technical Field to which the New Type belongs] Especially relates to a type. This creation relates to an image sensor with low noise. [Previous technology] During the transmission of electronic signals, they will be interfered with by some unnecessary extra energy. This extra energy is called so-called miscellaneous noise. Normally, noise interference will cause signal distortion.
系統外部與系統本身，而影像感測器〔Image Sens〇r〕係 為將光學影像信號轉換成電子訊號，以供顯示或儲存用之 半導體元件，隨著科技的發展，愈來愈多的個人化手攜式 電子產品都會使用到影像感測器，例如數位相機 〔DSC〕、數位攝影機、手機及個人數位助理〔PDA〕等， 當影像感測器運用在無線產品時，即有可能受到無線高頻 影響其電子訊號傳輸。 美國專利第6, 399, 995號係揭示有一影像感測器，其 係包含一影像感測晶片、一密封板、複數個内引腳及一密 封膠，該影像感測晶片係具有一表面，該表面係形成有一 感測區’用以感測影像，該密封板係固設於該影像感測晶 片並覆蓋該影像感測晶片之感測區，該些内引腳係為卷帶 自動接合〔tape automated bonding，TAB〕之内引腳， 其係設於該密封板與該影像感測晶片之表面之間，並指向 該影像感測晶片之感測區，每一内弓丨腳係具有一接合端， 該些接合端係設於該影像感測晶片之感測區之外，該密封 膠係ex於该影像感測晶片之感測區之外’且完整圍繞該些The exterior of the system and the system itself, and the image sensor [Image Sensore] is a semiconductor element that converts optical image signals into electronic signals for display or storage. With the development of technology, more and more individuals Hand-held electronic products will use image sensors, such as digital cameras (DSC), digital cameras, mobile phones, and personal digital assistants (PDAs). When image sensors are used in wireless products, they may be subject to wireless High frequency affects its electronic signal transmission. US Patent No. 6,399,995 discloses an image sensor including an image sensing chip, a sealing plate, a plurality of inner pins, and a sealant. The image sensing chip has a surface. The surface is formed with a sensing area for sensing an image. The sealing plate is fixed on the image sensing chip and covers the sensing area of the image sensing chip. The inner pins are automatically joined by a tape. [Tape automated bonding (TAB)], which is located between the sealing plate and the surface of the image sensing chip and points to the sensing area of the image sensing chip. A bonding end is disposed outside the sensing area of the image sensing chip, and the sealant ex is outside the sensing area of the image sensing chip and completely surrounds the
第8頁 M249376 創作說明（2) 内引腳之，口 以密封該些内引腳之接合端與該影像感 測晶片=測區，該影像感測器不僅無其他降低雜訊之構 造，且f畨封膠係為一種環氧樹脂〔epoxy resin〕，環 氧樹脂係為一種非氣密性的〔n〇n_hermetic〕材質，不但 會吸濕’ i大氣中的濕氣會穿透該密封膠而進入該密封 板與該影像感測晶片之表面之間，影響可靠度。Page 8 M249376 Creative Instructions (2) The inner pins seal the joint ends of the inner pins and the image sensing chip = measurement area. The image sensor not only has no other structure to reduce noise, and f 畨 The sealant is an epoxy resin, and the epoxy resin is a non-hermetic [n〇n_hermetic] material, which will not only absorb moisture, but also the moisture in the atmosphere will penetrate the sealant. Entering between the sealing plate and the surface of the image sensing chip affects the reliability.
此外另種習知之影像感測器，如我國專利公告第 484237號「捲帶封裝之光學裴置」所揭示者，該捲帶封裝 之光學裝置係包含有-光感測晶#…軟質電路基板及一 底座^該軟質電路基板係具有一上表面、一下表面及一窗 口，該底座係具有一凹槽，用以容置該光感測晶片，該凹 槽係對應於該軟質電路基板之窗口而位於軟質電路基板之 下表面下方，為避免水氣或塵粒侵害該光感測晶片，需在 該底座之圍堤上結合有一透明蓋，由於該捲帶封裝之光學 裝置係以該凹槽容置該光感測晶片，並於該底座之圍堤結 合該透明蓋，該底座係以壓模灌膠形成，不僅無法有效降 低雜訊，且該底座之材質亦為非氣密性的 〔non-hermetic〕環氧樹脂〔ep〇xy resin〕，仍然會吸 濕，影響該影像感測器之可靠度。In addition, another conventional image sensor, such as disclosed in China Patent Publication No. 484237 “Optical Peel Placement of Tape and Reel Packaging”, the optical device of the tape and reel package includes-光 感 测 晶 # ... soft circuit substrate And a base ^ The soft circuit substrate has an upper surface, a lower surface and a window, and the base has a groove for accommodating the light sensing chip, and the groove corresponds to a window of the soft circuit substrate It is located below the lower surface of the soft circuit substrate. In order to avoid moisture or dust particles from invading the light-sensing chip, a transparent cover must be combined on the dyke of the base. The light sensing chip is housed, and the transparent cover is combined with the embankment of the base. The base is formed by injection molding, which not only can not effectively reduce noise, but also the material of the base is not air-tight. Non-hermetic] epoxy resins still absorb moisture, affecting the reliability of the image sensor.
【新型内容】 本創作之主要目的係在於提供一種金屬密封之影像感 測器，利用一第一屏蔽金屬層覆蓋一薄膜基板之下^面與 一密封膠’以形成屏蔽效應〔shielding 、 ef fectiveness〕，達到降低雜訊之功效，此外，由於該[New content] The main purpose of this creation is to provide a metal-sealed image sensor. A first shielding metal layer is used to cover the underside of a thin film substrate and a sealant to form a shielding effect [shielding, effectiveness 〕, To achieve the effect of reducing noise, in addition, because the
第9頁 M249376 四、創作說明（3) ' 第一屏蔽金屬層係覆蓋該密封膠，以防止水氣侵入該密封 膠，提昇可靠度。 。本創作之次一目的係在於提供一種金屬密封之影像感 測器，利用一第二屏蔽金屬層覆蓋一薄膜基板之上表面與 一黏膠層，以形成屏蔽效應，達到降低雜訊之功效，此 外，由於該第二屏蔽金屬層係覆蓋該黏膠層，以防止水氣 侵入該黏膠層，提昇可靠度。 依本創作之低雜訊之影像感測器，其係主要包含有一 薄膜基板、一影像感測晶片、一透光片及一第一屏蔽金屬 層，該薄膜基板係包含有一第一介電層、一第二介電層及 一金屬線路層，該薄膜基板係具有一上表面、一下表面及 一窗口，該窗口係貫穿該薄膜基板之上表面與下表面，該 金屬線路層係形成於該薄膜基板之第一介電層與第二介^ 層之間，該金屬線路層係具有複數個接合端，該些^ ^端 係顯露於該第一介電層，該影像感測晶片係二二 及一背面，該影像感測晶片之主動面係形成有一感測區及 複數個凸塊，該感測區係對應該薄膜基板之窗口，該些凸 塊係接合於該薄膜基板之接合端，且該影像感測晶片之主 動面周邊係形成有一密封膠，用以密封該影像感測晶片之 該感測區，該密封膠係包覆該影像感測晶片之該些凸塊， 4透光片係覆蓋該影像感測晶片之感測區，該第一屏蔽金 屬層係覆蓋該密封膠與該薄膜基板之下表面，不僅能形成 屏蔽效應〔shielding effectiveness〕，達到降低雜訊 之功效，更可以防止水氣侵入該密封膠，提昇可靠度。°Page 9 M249376 IV. Creative Instructions (3) '' The first shielding metal layer covers the sealant to prevent water and gas from entering the sealant and improving reliability. . The second purpose of this creation is to provide a metal-sealed image sensor, which uses a second shielding metal layer to cover the upper surface of a thin-film substrate and an adhesive layer to form a shielding effect and achieve the effect of reducing noise. In addition, since the second shielding metal layer covers the adhesive layer to prevent moisture from entering the adhesive layer, the reliability is improved. The low-noise image sensor created according to this document mainly includes a thin-film substrate, an image-sensing chip, a light-transmitting sheet, and a first shielding metal layer. The thin-film substrate includes a first dielectric layer A second dielectric layer and a metal circuit layer, the thin film substrate has an upper surface, a lower surface, and a window, the window penetrates the upper surface and the lower surface of the thin film substrate, and the metal circuit layer is formed in the Between the first dielectric layer and the second dielectric layer of the thin film substrate, the metal circuit layer has a plurality of bonding terminals, and the ^ terminals are exposed on the first dielectric layer, and the image sensing chip is two On the second and first back sides, the active surface of the image sensing chip is formed with a sensing area and a plurality of bumps, the sensing area corresponds to a window of the thin film substrate, and the bumps are bonded to the bonding end of the thin film substrate. A sealant is formed around the active surface of the image sensing chip to seal the sensing area of the image sensing chip. The sealant covers the bumps of the image sensing chip. Light film system covers the image sensing In the sensing area of the sheet, the first shielding metal layer covers the sealant and the lower surface of the film substrate, which can not only form a shielding effectiveness, reduce the effect of noise, but also prevent moisture from entering the seal. Glue to improve reliability. °
M249376 四、創作說明（4) 【實施方式】 參閱所附圖式，本創作將列舉以下之實施例說明。M249376 IV. Creative Instructions (4) [Embodiment] Referring to the attached drawings, this creative will enumerate the following examples.
依本創作之第一具體實施例，請參閱第1圖，一種低 雜訊之影像感測器1 0 0，其係主要包含有一薄膜基板丨丨〇、 一影像感測晶片1 2 0、一透光片1 3 0及一第一屏蔽金屬層 140 ’該薄膜基板11〇係具有一上表面hi、一下表面η?及 一窗口 113，該窗口 113係貫穿該薄膜基板110之上表面1^ 與下表面11 2，該薄膜基板11 〇係包含有一第一介電層 114、一第二介電層115及一金屬線路層Π6，該第一介電 層114之材質係為具有可撓性之聚亞醯胺〔p〇iyimide，According to the first specific embodiment of this creation, please refer to FIG. 1. A low-noise image sensor 100, which mainly includes a thin film substrate, an image sensing chip, 1 2 0, a The light-transmitting sheet 130 and a first shielding metal layer 140 'have a top surface hi, a bottom surface η ?, and a window 113, and the window 113 penetrates the upper surface 1 ^ of the thin-film substrate 110. And the lower surface 112, the thin film substrate 110 includes a first dielectric layer 114, a second dielectric layer 115, and a metal circuit layer Π6, and the material of the first dielectric layer 114 is flexible Polyimide
PI〕或聚酯〔polyester，PET〕，該第二介電層115係為 防銲層〔solder resistant〕，該金屬線路層116係形成 於該薄膜基板110之第一介電層114與第二介電層115之 間，該金屬線路層11 6之材質係為銅、鎳或銅鎳合金等金 屬，該金屬線路層11 6係具有複數個接合端11 7，該些接合 端11 7顯露於該第一介電層11 4，在本實施例中，該金屬線 路層116之接合端117係延伸至該薄膜基板11〇之窗口 113， 該影像感測晶片1 2 0係為一種光感測晶片〔〇 p t i c a 1 sensing chip〕、電荷辆合裝置〔charge coupled device，CCD〕、互補式金屬氧化半導體〔complementary metal oxide semiconductor j CMOS )或光電二極體 〔photodiode〕，該影像感測晶片1 20係具有一主動面1 21 及一背面1 2 2，該影像感測晶片1 2 0之主動面1 2 1係形成有 一感測區123及複數個凸塊124，該影像感測晶片120之背 M249376 四、創作說明（5) 面122係形成有一背膠保護層125，該影像感測晶片120之 感測區123係對應該薄膜基板11〇之窗口 113，該些凸塊124 係接合於該薄膜基板110之接合端1 17，該影像感測晶片 1 2 0之主動面1 2 1周邊係形成有一密封膠1 5 0，用以密封該 影像感測晶片1 2 0之感測區1 2 3，該密封膠1 5 0係包覆該影 像感測晶片120之凸塊124，且不覆蓋至該影像感測晶片 120之感測區123，該密封膠150係選自於異方性導電膠 〔anisotropic conductive paste，ACP〕與覆晶底部填 充材〔underfilling material〕之其中之一，該透光片 1 3 0係為形成有一紅外線滤光膜1 3 1之玻璃，用以遽除紅外 線，防止產生雜訊或偽色，該透光片130係以一黏膠層160 貼設於該薄膜基板11 〇之上表面11 1，並覆蓋該影像感測晶 片120之感測區123，該黏膠層160係選自於光感固化膠 〔photocurable paste〕與B 階〔B-stage〕固化膠之其中 之一’該透光片130與該影像感測晶片120之感測區123之 間係填充有氮氣與惰性氣體之其中之一，該第一屏蔽金屬 層140係覆蓋該密封膠15〇與該薄膜基板11()之下表面112 , 並完全覆蓋該影像感測晶片1 20之背膠保護層1 25，該第一 屏蔽金屬層1 40係以濺鐘〔SpUtter ing〕技術所形成之金 屬層’該第一屏蔽金屬層140係為一種氣密性的 〔hermetic〕材質，例如金、錄、鉻及其合金，較佳地， 該影像感測器1〇〇另包含有一第二屏蔽金屬層17〇，其亦為 一種氣密性的材質，該第二屏蔽金屬層170係覆蓋該薄膜 基板110之上表面111、該黏膠層16〇以及該透光片13〇，但PI] or polyester [PET], the second dielectric layer 115 is a solder resistant layer, and the metal circuit layer 116 is formed on the first dielectric layer 114 and the second dielectric layer 110 of the thin film substrate 110. Between the dielectric layers 115, the material of the metal circuit layer 116 is metal such as copper, nickel, or copper-nickel alloy. The metal circuit layer 116 includes a plurality of bonding terminals 11 7 which are exposed at The first dielectric layer 114, in this embodiment, the bonding end 117 of the metal circuit layer 116 extends to the window 113 of the thin film substrate 110, and the image sensing chip 12 is a type of light sensing Chip [〇ptica 1 sensing chip], charge coupled device (CCD), complementary metal oxide semiconductor (CMOS) or photodiode [photodiode], the image sensing chip 1 20 It has an active surface 1 21 and a back surface 1 2 2. The active surface 1 2 1 of the image sensing chip 1 2 0 is formed with a sensing area 123 and a plurality of bumps 124. The back of the image sensing chip 120 M249376 IV. Creation Instructions (5) Face 122 Series There is a protective adhesive layer 125. The sensing area 123 of the image sensing chip 120 corresponds to the window 113 of the thin film substrate 110. The bumps 124 are bonded to the bonding ends 1 17 of the thin film substrate 110. The image sensing A sealant 1 50 is formed around the active surface 1 2 1 of the test chip 1 2 0 to seal the sensing area 1 2 3 of the image sensing chip 1 2 0, and the sealant 1 50 covers the The bump 124 of the image sensing chip 120 does not cover the sensing area 123 of the image sensing chip 120. The sealant 150 is selected from anisotropic conductive paste (ACP) and the bottom of the flip chip One of the underfilling materials, the light transmitting sheet 130 is a glass formed with an infrared filter film 1 31 to eliminate infrared rays and prevent noise or false colors. The light transmitting sheet 130 is attached to the upper surface 11 1 of the thin film substrate 110 with an adhesive layer 160, and covers the sensing area 123 of the image sensing chip 120. The adhesive layer 160 is selected from a light-curing adhesive [ photocurable paste] and one of the B-stage curing glue. 'The light transmitting sheet 130 and The sensing region 123 of the image sensing chip 120 is filled with one of nitrogen and inert gas, and the first shielding metal layer 140 covers the sealant 15 and the lower surface 112 of the film substrate 11 (), And completely cover the adhesive protection layer 125 of the image sensing chip 120, the first shielding metal layer 140 is a metal layer formed by the SpUttering technology, and the first shielding metal layer 140 is A hermetic material, such as gold, aluminum, chromium, and alloys thereof. Preferably, the image sensor 100 further includes a second shielding metal layer 170, which is also a kind of air tightness. The second shielding metal layer 170 covers the upper surface 111 of the thin film substrate 110, the adhesive layer 16 and the transparent sheet 13, but
IHI 第12頁 M249376 四、創作說明（6) -- 該第二屏蔽金屬層170不可覆蓋至該影像感測晶片12〇之感 測區1 23上方，以避免影響該影像感測器丨〇〇感測光學影 信號。 由於該第一屏蔽金屬層14〇係覆蓋該密封膠15〇、該薄 膜基板110之下表面112與該影像感測晶片12〇之背膠保護 層125，不僅能形成屏蔽效應〔shielding ef f ectiveness〕’避免外部訊號干擾，達到降低雜訊之 功效，而該第一屏蔽金屬層丨4〇係為一種氣密性的 〔hermetic〕材質’更可以防止水氣侵入該密封膠丨5〇， 改善可靠度，此外，該第二屏蔽金屬層丨70係覆蓋該薄膜 基板110之上表面111與該黏膠層16〇，亦可形成屏蔽效 應’增進降低雜訊之功效，且該第二屏蔽金屬層17〇亦為 一種氣密性的材質，能防止水氣侵入該黏膠層丨6 〇，提昇 可靠度。 依本創作之第二具體實施例，請參閱第2圖，一種低 雜訊之影像感測器200，其係主要包含有一薄膜基板21〇、 一影像感測晶片220、一透光片230及一第一屏蔽金屬層 240，該薄膜基板210係具有一上表面211、一下表面21 2及 一貫穿該上表面211與該下表面212之窗口 213，該薄膜基 板2 10係包含有一第一介電層214、一第二介電層215及一 金屬線路層216，在本實施例中，該薄膜基板210之第一介 電層214之材質係為防銲層〔solder resistant〕，並形 成有複數個開口 21 7，該第二介電層2 1 5係為具有可撓性之 聚亞醯胺〔polyimide，PI〕或聚醋〔polyester，IHI Page 12 M249376 IV. Creation Instructions (6)-The second shielding metal layer 170 should not cover the sensing area 1 23 of the image sensing chip 120 to avoid affecting the image sensor 丨 〇〇 Sensing optical shadow signals. Since the first shielding metal layer 14 covers the sealant 150, the lower surface 112 of the film substrate 110, and the backing protective layer 125 of the image sensing wafer 120, it can not only form a shielding effect [shielding ef f ectiveness] ] 'Avoid external signal interference to achieve the effect of reducing noise, and the first shielding metal layer 丨 40 is a hermetic material' can prevent water and gas from invading the sealant 丨 50, improve Reliability, in addition, the second shielding metal layer 70 covers the upper surface 111 of the thin film substrate 110 and the adhesive layer 160, and can also form a shielding effect to enhance the effect of reducing noise, and the second shielding metal The layer 17 is also an air-tight material, which can prevent moisture from invading the adhesive layer and improve reliability. According to the second specific embodiment of this creation, please refer to FIG. 2, a low-noise image sensor 200 mainly includes a thin film substrate 21, an image sensing chip 220, a light transmitting sheet 230 and A first shielding metal layer 240. The thin film substrate 210 has an upper surface 211, a lower surface 21 2 and a window 213 penetrating the upper surface 211 and the lower surface 212. The thin film substrate 2 10 includes a first substrate The electrical layer 214, a second dielectric layer 215, and a metal circuit layer 216. In this embodiment, the material of the first dielectric layer 214 of the thin film substrate 210 is a solder resistant layer, and is formed with A plurality of openings 21 7, the second dielectric layer 2 1 5 is a flexible polyimide (PI) or polyacetate [polyester,
IBS 第13頁 M249376 四、創作說明（7)IBS Page 13 M249376 IV. Creative Instructions (7)
PET〕，該金屬線路層216係形成於該薄膜基板210之第一 介電層214與第二介電層215之間，該金屬線路層216係具 有複數個接合端218，該些接合端2 18係顯露於該第一介電 層214之開口 217，該影像感測晶片220係具有一主動面221 及一背面222，該影像感測晶片220之主動面221係形成有 一感測區223及複數個凸塊224，該影像感測晶片220之感 測區223係對應該薄膜基板210之窗口 213，該些凸塊224係 接合於該薄膜基板210之接合端218，該影像感測晶片220 之主動面221周邊係形成有一密封膠250，用以密封該影像 感測晶片220之感測區223，該密封膠250係包覆該影像感 測晶片220之凸塊224，且不覆蓋至該影像感測晶片220之 感測區223，該透光片230係為形成有一紅外線濾光膜231 之玻璃，該透光片230係以一黏膠層260貼設於該薄膜基板 210之上表面211，並覆蓋該影像感測晶片220之感測區 223，該第一屏蔽金屬層240係為一種氣密性的 〔hermetic〕材質，例如金、鎳、鉻及其合金，該第一屏 蔽金屬層240係覆蓋該密封膠250與該薄膜基板210之下表 面212，並完全覆蓋該影像感測晶片220之背面222，不僅 能形成屏蔽效應，違到降低雜訊之功效，更可以防止水氣 侵入該密封膠250，提昇可靠度，較佳地，該影像感測器 200另包含有一第二屏蔽金屬層270，其亦為一種氣密性的 材質’該第二屏蔽金屬層270係覆蓋該薄膜基板.210之上表 面211與該黏膠層260，以形成屏蔽效應，降低雜訊，並且 避免水氣侵入該黏膠層260，改善可靠度。 M249376 四、創作說明（8) 本創作之保護範圍當視後附之申請專利範圍所界定者 為準，任何熟知此項技藝者，在不脫離本創作之精神和範 圍内所作之任何變化與修改，均屬於本創作之保護範圍。 «PET]. The metal circuit layer 216 is formed between the first dielectric layer 214 and the second dielectric layer 215 of the thin film substrate 210. The metal circuit layer 216 has a plurality of bonding terminals 218. The bonding terminals 2 18 is exposed in the opening 217 of the first dielectric layer 214, the image sensing chip 220 has an active surface 221 and a back surface 222, and the active surface 221 of the image sensing chip 220 forms a sensing area 223 and A plurality of bumps 224, the sensing area 223 of the image sensing wafer 220 corresponds to the window 213 of the thin film substrate 210, the bumps 224 are bonded to the bonding end 218 of the thin film substrate 210, and the image sensing wafer 220 A sealant 250 is formed around the active surface 221 to seal the sensing area 223 of the image sensing chip 220. The sealant 250 covers the bump 224 of the image sensing chip 220 and does not cover the area. In the sensing area 223 of the image sensing chip 220, the light-transmitting sheet 230 is a glass formed with an infrared filter film 231, and the light-transmitting sheet 230 is attached to the upper surface of the film substrate 210 with an adhesive layer 260 211, and covering the sensing area 223 of the image sensing chip 220, the A shielding metal layer 240 is a hermetic material, such as gold, nickel, chromium, and alloys thereof. The first shielding metal layer 240 covers the sealant 250 and the lower surface 212 of the film substrate 210. And it completely covers the back surface 222 of the image sensing chip 220, which not only can form a shielding effect and violate the effect of reducing noise, but also can prevent moisture from entering the sealant 250, improving reliability, and preferably, the image sensing The device 200 further includes a second shielding metal layer 270, which is also an air-tight material. The second shielding metal layer 270 covers the film substrate. The upper surface 211 of the 210 and the adhesive layer 260 form a shield. Effect, reduce noise, and prevent moisture from entering the adhesive layer 260, improving reliability. M249376 IV. Creation Note (8) The scope of protection of this creation shall be determined by the scope of the attached patent application. Any changes and modifications made by anyone who is familiar with this art without departing from the spirit and scope of this creation , All belong to the protection scope of this creation. «
第15頁 M249376 圖式簡單說明 【圖式簡單說明】 第1圖：依據本創作之第一具體實施例，一種低雜訊之影 像感測器之截面示意圖；及 第2圖：依據本創作之第二具體實施例，一種低雜訊之影 像感測器之截面示意圖。 元件符號簡單說明： 100影像感測器 11 0薄膜基板 111 113 窗口 114 11 6 金屬線路層 117 120影像感測晶片121 123 感測區 124 130 透光片 131 140第一屏蔽金屬層 1 5 0 密封膠 1 6 0黏膠層 170第二屏蔽金屬層 200影像感測器 21 0薄膜基板 211 213 窗口 214 216 金屬線路層 217 220影像感測晶片221 223感測區 224 上表面 第一介電層 接合端 主動面 凸塊 紅外線濾光膜 112下表面 115第二介電層 122背面 125背膠保護層 上表面 第一介電層 開口 主動面 凸塊 212 下表面 215第二介電層 218接合端 222背面 ΦPage 15 M249376 Simple description of the drawings [Simplified illustration of the drawings] Figure 1: A cross-sectional view of a low-noise image sensor according to the first specific embodiment of this creation; and Figure 2: Based on this creation The second specific embodiment is a schematic cross-sectional view of a low-noise image sensor. Simple explanation of component symbols: 100 image sensor 11 0 film substrate 111 113 window 114 11 6 metal circuit layer 117 120 image sensor chip 121 123 sensing area 124 130 light transmitting sheet 131 140 first shielding metal layer 1 5 0 sealing Adhesive 1 0 0 Adhesive layer 170 Second shielding metal layer 200 Image sensor 21 0 Thin film substrate 211 213 Window 214 216 Metal circuit layer 217 220 Image sensing chip 221 223 Sensing area 224 First dielectric layer bonding on the upper surface Active surface bump infrared filter 112 lower surface 115 second dielectric layer 122 back surface 125 adhesive protection layer upper surface first dielectric layer opening active surface bump 212 lower surface 215 second dielectric layer 218 bonding end 222 Back Φ
第16頁 M249376 圖式簡單說明 2 3 1紅外線濾光膜 230透光片 240第一屏蔽金屬層 2 5 0 密封膠 2 6 0 黏膠層 270第二屏蔽金屬層Page 16 M249376 Simple illustration of the diagram 2 3 1 Infrared filter film 230 Transparent sheet 240 First shielding metal layer 2 5 0 Sealant 2 6 0 Adhesive layer 270 Second shielding metal layer
第17頁Page 17
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102822963A (en) * | 2010-04-06 | 2012-12-12 | 英特尔公司 | Forming metal filled die back-side film for electromagnetic interference shielding with coreless packages |
| CN102834906A (en) * | 2010-04-16 | 2012-12-19 | 英特尔公司 | Forming functionalized carrier structures with coreless packages |
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2003
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102822963A (en) * | 2010-04-06 | 2012-12-12 | 英特尔公司 | Forming metal filled die back-side film for electromagnetic interference shielding with coreless packages |
| CN102822963B (en) * | 2010-04-06 | 2016-08-10 | 英特尔公司 | Centreless packaging part is utilized to form the metal filled die backside thin film for electromagnetic interference shield |
| CN102834906A (en) * | 2010-04-16 | 2012-12-19 | 英特尔公司 | Forming functionalized carrier structures with coreless packages |
| US8987065B2 (en) | 2010-04-16 | 2015-03-24 | Intel Corporation | Forming functionalized carrier structures with coreless packages |
| CN102834906B (en) * | 2010-04-16 | 2016-01-06 | 英特尔公司 | Microelectronic packaging structure and method of forming microelectronic packaging structure |
| US9257380B2 (en) | 2010-04-16 | 2016-02-09 | Intel Corporation | Forming functionalized carrier structures with coreless packages |
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