TWI241018B - Method for manufacturing wafer level image sensor package with chip on glass configuration and structure of the same - Google Patents

Abstract

A method for manufacturing wafer level image sensor package with chip on glass configuration is disclosed. At first, the method is providing a wafer with a plurality of image sensing chips. Each image sensing chip forms a sensing area and a plurality of bumps on its active area. Then, the method is providing a glass substrate with a plurality of substrate units which are defined by a plurality of cutting lines. Each substrate unit has a plurality of through holes which are corresponding to the bumps. The glass substrate is formed a sealing layer which is covering the through holes and the cutting lines. Then, the glass substrate and the wafer are attached together so that the bumps of the image sensing chips are electrically connecting with the through holes of the substrate units. Then, the glass substrate and the wafer are cut to finish the wafer level image sensor package.

Description

1241018 V. Description of the invention (1) · 1-[Technical Field to which the Invention belongs] The present invention relates to a method for manufacturing an image sensor, and more particularly to a method for manufacturing a wafer-level glass-on-chip image sensor . [Previous technology] With the development of technology, more and more personal hand-held electronic products will use image sensors, such as digital cameras, digital cameras, mobile phones, and personal digital assistants (PDAs). The image sensor is an image sensor chip, such as a complementary metal oxide semiconductor j CMOS, installed in a capacitor cavity, which can be a lead frame or a hard rabbit A pre-mold [pre — mo 1 d] formed by a printed circuit board, or a groove formed by a ceramic substrate, sealed with a transparent cover, and the space for sealing the image sensing wafer is usually vacuum or filled. There is an inert gas to prevent moisture or dust particles from invading. US Patent No. 6,5 4 8, 7 5 9 "Image sensor with pre-money hole" discloses a conventional image sensor, the image sensor The measuring device includes a substrate, a plurality of electrical connection wires, an image sensing chip and a glass window. The substrate has an opening and a side wall defining the opening. The electrical connection wires are provided on the base. The openings of the board, the electrical connecting wires have a plurality of protrusions, the protrusions extend from the side wall of the opening of the substrate, and the image sensing chip is provided at the opening of the substrate, and Supported by the protruding portion of the electrical connection wire, the image sensing chip has a first surface, the first surface is formed with an active area, and the glass window is bonded to the first surface of the image sensing chip. Glass windows cover and protect the image sensor

Page 8 1241018

V. Description of the invention (2) The active area of the chip, because the glass window must be directly attached with an adhesive layer on the active area of the image sensing chip, although the adhesive layer is transparent, it will still decrease. Analysis of the active area of the image sensing chip ^ [Contents of the Invention] The main purpose of Λ and ^ Ming is to provide a wafer-level glass-on-chip crystal shadow imager 'manufacturing method of an image sensor' using a lamination method including a plurality of A glass substrate of each substrate unit and a wafer including a plurality of image sensing wafers, the size of the substrate units is equal to the size of the image sensing wafers to completely protect the active surfaces of the image sensing wafers, And the size of the manufactured image sensor is equal to the size of the image sensing chip. A second object of the present invention is to provide a method for manufacturing a wafer-level glass-on-chip image sensor, by providing a glass substrate formed with a sealing layer on a first surface, the sealing layer covering the glass substrate. Electrically conducting holes and cutting lines, after bonding the glass substrate and a wafer, when cutting the glass substrate and the wafer, the first surface of the glass substrate is protected by the sealing layer to avoid the glass substrate Chipping occurs on the first surface. Another object of the present invention is to provide a wafer-level glass-on-chip image sensor using an image-sensing chip formed with a plurality of dams. The dams are provided on the image sensors. Between the sensing areas of the chip and the bumps Φ, to avoid a sealing layer covering the sensing area of the image sensing chip and contaminating the sensing area of the image sensing chip. According to the method for manufacturing a wafer-level glass-on-chip image sensor of the present invention, first, a wafer including a plurality of image-sensing chips is provided, and each image

1241018 V. Description of the invention (3) The image sensing chip has an active surface and a back surface. Each active surface is formed with a sensing area and a plurality of bumps, and the bumps are provided in the image sensing. · '· Around the active surfaces of the wafer, a glass substrate including a plurality of substrate units γ is provided, and the glass substrate has a first surface and a second surface · Surface' is defined between the substrate units There are a plurality of cutting lines, and each substrate · unit system has a plurality of electrical vias, and the electrical vias penetrate the first surface and the second surface of the glass substrate, and correspond to the image sensing wafers. For the bumps, the first surface of the glass substrate is formed with a sealing layer. The sealing layer covers the electrical vias and the cutting lines of the substrate units, and then the glass is bonded. The substrate and the wafer, such that the bumps of the shirt-like sensing wafer are electrically connected to the electrical vias of the substrate units, and then a plurality of solder balls are implanted on the glass substrate. Two surfaces' the solder balls are related to the Electrically conductive vias is electrically connected, and then cut, the cut wafer with the glass substrate, to complete the wafer level image sensor chip on glass filter. -[Embodiment] With reference to the attached drawings, the present invention will enumerate the following embodiment descriptions. According to a specific embodiment of the present invention, a method for manufacturing a wafer-level glass-on-chip image sensor is described below. Please refer to FIG. 丨 A. First, a wafer including a plurality of image sensing chips 11 is provided. 1 0, the image sensing day 11 is a light sensing chip [ooptical sensing chip], a charge coupled device (CCD), complementary metal oxide semiconductor (complementary metal oxide semiconductor, CMOS) ] Or photodiode, ^ ΗΠ · Β Page 10 1241018 V. Description of the invention (4) Each image sensing chip I1 has an active surface 12 and a back surface 13, each active surface 12 series A sensing area 14 and a plurality of bumps 15 are formed. The bumps 15 are disposed on the periphery of the active surface 12 of the image sensing wafers 11 'preferably' and are active on the image sensing wafers 11. The surface 12 is formed with a plurality of dams 16 [dam], which are disposed between the sensing regions 14 and the bumps 15 of the image sensing chips 11, and the back surface 1 of the image sensing chips 11 3 series is formed with a protective adhesive layer 17; see also 1 'mention A substrate comprising a plurality of cells 21 of the glass substrate 20, the glass substrate dimensions are equal 2〇 of the wafer

10, and the size of the substrate units 21 is also equal to the size of the image sensing wafers 11. The glass substrate has a first surface 22 and a first vertical surface 23. The system defines a plurality of cutting lines 24, and each substrate unit 21 has a plurality of electrical vias 25, and the electrical vias 25 pass through the first surface 22 and the second surface 23 of the glass substrate 20, Corresponding to the bumps 15 of the image sensing wafers 11, a sealing layer 26 is formed on the first surface 22 of the glass substrate 20, and the sealing layer 26 covers the electrical conduction of the substrate units 21. The hole 25 and the cutting line 24. The sealing layer 26 may be a B-stage anisotropic conductive paste (B-stage ACP) or an anisotropic conductive film (ACF). The sealing layer 26 is a β-order anisotropic conductive adhesive, which is formed on the first surface 22 of the glass substrate 20 by printing and is baked in the first stage to reduce its fluidity. When 2 6 is an anisotropic conductive film, it is directly attached to the glass substrate 20 A surface 22, second surface 23 of the glass substrate 2〇 lines formed with a plurality of redistribution traces 27, connected to the plurality of lines which are electrically conductive vias 25,

Page 11 1241018________ Explanation (5) These • Redistribution traces 2 7 are fan-out [f a η o u t] to increase the spacing,

If the sensing areas 1 4 of the image sensing chips 11 are close to the area of the entire active surface 12, that is, the bumps 15 of the image sensing chips 11 are away from the sides of the image sensing chips 11 When they are very close, and when the distance between the bumps 15 is sufficiently large, the second surface 23 of the glass substrate 20 does not need to form the redistribution traces 27; then refer to FIG. 1C and attach the glass substrate. 20 and the wafer 10, so that the bumps 15 of the image sensing wafers 11 are electrically connected to the electrical vias 25 of the substrate units 21, and the sensing areas 1 4 of the image sensing wafers 11 A closed space is formed with the substrate units 21, and in this embodiment, the bonding of the glass substrate 20 and the wafer 10 is performed in an environment of nitrogen or inert gas, so the image sensing wafers The sensing area 14 of 11 and the substrate units 14 are filled with one of nitrogen and inert gas; referring to FIG. 1D again, a plurality of solder balls 30 are implanted on the second of the glass substrate 20 The redistribution traces 27 or electrical vias 25 of the surface 23 are electrically connected to the electrical vias 25; please refer to FIG. 1E again Cutting the glass substrate 20 and the wafer 10 to complete the wafer-level glass-on-chip image sensor. The method of cutting the glass substrate 20 and the wafer 10 is selected from laser cutting, diamond One of knife cutting and sand blasting cutting. Since the size of the substrate units 21 is equal to the size of the image sensing wafers 11, the active surfaces of the image sensing wafers 11 can be completely protected, and the size of the manufactured image sensor can be completely equal to The size of the image sensing wafers 11, and in the manufacturing process, the size of the glass substrate 20 is equal to the size of the wafer 10, which is easy to handle and handle, and the fixtures can be shared. In addition, the sealing layer 26 is covered Cutting lines between the substrate units 21

Page 1212418 V. Description of the invention (6) 2 4. When the glass substrate 20 and the wafer 10 are cut, the sealing layer 26 can prevent the first surface 22 of the glass substrate 20 from collapsing. chipping], and the barriers 16 provided on the image sensing chips 11 can avoid the lamination of the glass sealing layer 26 to cover the image sensing crystals and the sensing of the image sensing chips 11 The scope of protection shall be deemed to be 'anyone skilled in the art, any changes and modifications made within the scope, when the substrate 20 and the wafer between the sensing area 14 and the bump 15, the secret film 11 of the sensing area 1 4 without staining the area 14. Those defined by the scope of the appended patents shall fall within the protection scope of the invention without departing from the spirit and scope of the invention.

1241018 Brief description of the drawings [Simplified description of the drawings] Figures 1 A to 1 E: According to a specific embodiment of the present invention, a method for manufacturing a wafer-level glass-on-chip image sensor, an image sensing chip is being manufactured. Schematic cross-section during the process. Simple explanation of component symbols: 10 wafer 11 image sensor wafer 1 2 14 sensing area 15 1 7 adhesive protection layer 2 0 glass substrate 21 substrate unit 22 24 cutting line 25 2 7 redistribution trace 3 0 active surface of solder ball Back side of bump 13 16 Bank first surface Electrical via 23 Second surface 2 6 Sealing layer Φ

Page 14

Claims (1)

1241018 -------------- 6. Scope of patent application [Scope of patent application] 1. A method for manufacturing wafer-level glass-on-chip image sensor, including: providing a plurality of image sensors The wafer of the test chip'Each image sensing chip has an active surface and a back surface, each active surface is formed with a sensing area and a plurality of bumps, and the bumps are provided on the image sensing chips Provide a glass substrate including a plurality of substrate units. The glass substrate has a first surface and a second surface, and a plurality of cutting lines are defined between the substrate units. The substrate unit has a plurality of electrical vias. The electrical vias penetrate the first surface and the second surface of the glass substrate, and correspond to the bumps of the image sensing wafers. The glass substrate The first surface is formed with a sealing layer, and the sealing layer covers the electrical vias and the cutting lines of the substrate units; the glass substrate and the wafer are adhered, so that the image sensing wafers Should Block electrically connected to the plurality of electrically conductive vias of the plurality of substrate unit; and cutting the glass substrate and the wafer. 2. The method for manufacturing a wafer-level glass-on-chip image sensor as described in item 1 of the patent application scope, wherein the dimensions of the substrate units are equal to the dimensions of the read | image sensing wafers. 3. The method for manufacturing a wafer-level glass-on-chip image sensor as described in item 1 of the scope of patent application, wherein the size of the glass substrate is equal to the size of the wafer. Page 15 Ϊ241018 6. Application patent scope 4. The manufacturing method of the wafer-level glass-on-chip image sensor described in item 1 of the patent application scope, wherein the sealing layer does not cover the sensing areas of the image sensing wafers . 5 'The method for manufacturing a wafer-level glass-on-chip image sensor as described in item 1 of the scope of the patent application, wherein the sealing layer is a B-stage anisotropic conductive paste (B-stage ACP) 〕. 6. The method for manufacturing a wafer-level glass-on-chip image sensor as described in item i of the patent application range, wherein the sealing layer is an anisotropic conductive film [anisotropic conductive fi1m, ACF]. 7. The method for manufacturing a wafer-level glass chip-on-chip image sensor as described in item i of the patent application scope, wherein the second surface of the glass substrate is formed with a plurality of redistribution traces, which are connected to the These electrical vias. 8. The method for manufacturing a wafer-level glass chip-on-chip image sensor as described in item 7 of the scope of the patent application, further comprising implanting a plurality of solder balls on the redistribution traces to be electrically conductive The hole is electrically connected. 9. The method for manufacturing a wafer-level glass-on-chip image sensor as described in item 1 of the scope of the patent application, wherein the active surfaces of the image sensing wafers are formed with a plurality of dams [danl] It is located between the sensing areas of the image sensing chips and the bumps. φ 1 0. The method for manufacturing a wafer-level glass-on-chip image sensor as described in item 1 of the scope of patent application, wherein the back surfaces of the image-sensing wafers are formed with a protective adhesive layer. 11. Wafer-level glass flip-chip image sensing as described in item 1 of the scope of patent application Buying No. 16 1241018 6. Scope of Patent Application The manufacturing method of the detector, wherein the E and the 4 substrate units of the image sensing wafers are filled with one of a rat gas and an inert gas. 1 2. The method for manufacturing a wafer-level glass flip chip tester as described in item 1 of the scope of patent application, wherein the method of cutting the glass substrate and the wafer is selected from the group consisting of laser cutting, diamond knife cutting and sand blasting. One of the cuts. 1 3. A wafer-level glass-on-chip image sensor, comprising: an image-sensing chip having an active surface and a rear active surface formed with a sensing area and a plurality of bumps, the projections Around the active surface of the image sensing chip; a glass substrate unit, the glass substrate unit has a first surface, a second surface, and a plurality of electrical vias, and the electrical holes are through the glass substrate unit The first surface and the second surface 'are electrically connected to the bumps of the image sensing chip; a sealing layer is formed on the first surface of the glass substrate unit; the sealing layer covers the The electrical vias of the glass substrate unit; and a plurality of solder balls, which are implanted on the surface of the glass substrate unit. 14. The wafer-level glass-on-chip sensor according to item 13 of the scope of patent application, wherein the size of the glass substrate unit is equal to the size of the imaging wafer. 15. As described in item 13 of the scope of the patent application, the wafer-level glass chip-on-chip sensing method has its M image sense. Among them, the block is a table conduction table, a surface conduction second image image image 1241018 Sensor 'wherein the sealing layer does not cover the sensing area of the image sensing chip. 16. The wafer-level glass-on-chip image sensor as described in item 3 of the patent application scope, wherein the sealing layer is a B-stage anisotropic conductive paste 5 B-stage ACP] 〇 17. The wafer-level glass-on-chip image sensor described in item 3 of the patent application scope, wherein the sealing layer is an anisotropic conductive film (ACF). 18. The wafer-level glass chip-on-chip image sensor described in item 13 of the scope of the patent application, wherein the second surface of the glass substrate unit is formed with a plurality of redistribution traces, which are connected to these Electrical vias and the solder balls. 19. The wafer-level glass-on-chip image sensor according to item 3 of the patent application scope, wherein the active surface of the image-sensing chip is formed with a plurality of dams, which are located at Between the sensing area of the image sensing chip and the bumps. 20. Wafer-level glass flip-chip image as described in item 13 of the scope of patent application The sensor 'wherein the back surface of the image sensing chip is formed with a protective adhesive layer. 2 1. The wafer-level glass-on-chip image sensor described in item 13 of the scope of the patent application, wherein the sensing area of the image sensing wafer and the glass substrate unit are filled with nitrogen and inert gas. One of them. Page 18