TWI241018B - Method for manufacturing wafer level image sensor package with chip on glass configuration and structure of the same - Google Patents
Method for manufacturing wafer level image sensor package with chip on glass configuration and structure of the same Download PDFInfo
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1241018 五、發明說明(1) · 一— 【發明所屬之技術領域】 本發明係有關於一種影像感測器之製造方法,特別係 有關於一種晶圓級玻璃覆晶影像感測器之製造方法。 【先前技術】 隨著科技的發展,愈來愈多的個人化手攜式電子產品 都會使用到影像感測器,例如數位相機、數位攝影機、手 機及個人數位助理〔PDA〕等,習知之影像感測器〔Image Sensor〕係將一影像感測晶片,例如互補金屬氧化半導體 (complementary metal oxide semiconductor j CMOS〕,裝設於一容晶穴内,該容晶穴係可為一導線架或 硬兔印刷電路板形成之預模體〔pre — mo 1 d〕,或為一陶竞 基板形成之凹槽,再以一透明蓋密封,而在密封影像感測 晶片之空間内通常係為真空或填充有惰性氣體,以防止水 氣或塵粒侵入。 美國專利第6,5 4 8,7 5 9號「預錢孔之影像感測器」係 揭示有一種習知之影像感測器,該影像感測器係包含一基 板、複數個電性連接導線、一影像感測晶片及一玻璃窗, 該基板具有一開口及一定義該開口之側壁,該些電性連接 導線係設於該基板之開口,該些電性連接導線係具有複數 個凸出部’該些凸出部係延伸出該基板之開口之側壁,該 影像感測晶片係設於該基板之開口,並由該些電性連接導 線之凸出部所支撐,該影像感測晶片係具有一第一表面, 該第一表面係形成有一主動區,該玻璃窗係結合於該影像 感測晶片之第一表面,該玻璃窗係覆蓋並保護該影像感測1241018 V. Description of the invention (1) · 1-[Technical Field to which the Invention belongs] The present invention relates to a method for manufacturing an image sensor, and more particularly to a method for manufacturing a wafer-level glass-on-chip image sensor . [Previous technology] With the development of technology, more and more personal hand-held electronic products will use image sensors, such as digital cameras, digital cameras, mobile phones, and personal digital assistants (PDAs). The image sensor is an image sensor chip, such as a complementary metal oxide semiconductor j CMOS, installed in a capacitor cavity, which can be a lead frame or a hard rabbit A pre-mold [pre — mo 1 d] formed by a printed circuit board, or a groove formed by a ceramic substrate, sealed with a transparent cover, and the space for sealing the image sensing wafer is usually vacuum or filled. There is an inert gas to prevent moisture or dust particles from invading. US Patent No. 6,5 4 8, 7 5 9 "Image sensor with pre-money hole" discloses a conventional image sensor, the image sensor The measuring device includes a substrate, a plurality of electrical connection wires, an image sensing chip and a glass window. The substrate has an opening and a side wall defining the opening. The electrical connection wires are provided on the base. The openings of the board, the electrical connecting wires have a plurality of protrusions, the protrusions extend from the side wall of the opening of the substrate, and the image sensing chip is provided at the opening of the substrate, and Supported by the protruding portion of the electrical connection wire, the image sensing chip has a first surface, the first surface is formed with an active area, and the glass window is bonded to the first surface of the image sensing chip. Glass windows cover and protect the image sensor
第8頁 1241018Page 8 1241018
五、發明說明(2) 晶片之主動區,由於該玻璃窗必須以一黏膠層直接貼設於· 該影像感測晶片之主動區上,該黏膠層雖然為透明的,但 仍會降低該影像感測晶片之主動區之解析^· 【發明内容】 Λ 、本^明之主要目的係在於提供一種晶圓級玻璃覆晶影' 像感測器之製造方法’利用貼合一包含有複數個基板單元 之玻璃基板與一包含有複數個影像感測晶片之晶圓,該些 基板單元之尺寸係等於該些影像感測晶片之尺寸,以完全 保護該些影像感測晶片之主動面,而且製造出之影像感測 器之尺寸等於影像感測晶片之尺寸。 本發明之次一目的係在於提供一種晶圓級玻璃覆晶影⑩ 像感測器之製造方法,利用提供一形成有一密封層於第一 表面之玻璃基板,該密封層係覆蓋該玻璃基板之電性導通 ^ 孔與切割線,於貼合該玻璃基板與一晶圓之後,在切割該 玻璃基板與該晶圓時,以該密封層保護該玻璃基板之第一 表面,避免該玻璃基板之第一表面產生背崩 〔chipping 〕 。 本發明之再一目的係在於提供一種晶圓級玻璃覆晶影 像感測器,利用一形成有複數個擋堤〔dam〕之影像感測 晶片,該些擋堤係設於該些影像感測晶片之該些感測區與Φ 該些凸塊之間,以避免一密封層覆蓋至該影像感測晶片之 感測區,而污染該影像感測晶片之感測區。 依本發明之晶圓級玻璃覆晶影像感測器之製造方法, 首先,提供一包含有複數個影像感測晶片之晶圓,每一影V. Description of the invention (2) The active area of the chip, because the glass window must be directly attached with an adhesive layer on the active area of the image sensing chip, although the adhesive layer is transparent, it will still decrease. Analysis of the active area of the image sensing chip ^ [Contents of the Invention] The main purpose of Λ and ^ Ming is to provide a wafer-level glass-on-chip crystal shadow imager 'manufacturing method of an image sensor' using a lamination method including a plurality of A glass substrate of each substrate unit and a wafer including a plurality of image sensing wafers, the size of the substrate units is equal to the size of the image sensing wafers to completely protect the active surfaces of the image sensing wafers, And the size of the manufactured image sensor is equal to the size of the image sensing chip. A second object of the present invention is to provide a method for manufacturing a wafer-level glass-on-chip image sensor, by providing a glass substrate formed with a sealing layer on a first surface, the sealing layer covering the glass substrate. Electrically conducting holes and cutting lines, after bonding the glass substrate and a wafer, when cutting the glass substrate and the wafer, the first surface of the glass substrate is protected by the sealing layer to avoid the glass substrate Chipping occurs on the first surface. Another object of the present invention is to provide a wafer-level glass-on-chip image sensor using an image-sensing chip formed with a plurality of dams. The dams are provided on the image sensors. Between the sensing areas of the chip and the bumps Φ, to avoid a sealing layer covering the sensing area of the image sensing chip and contaminating the sensing area of the image sensing chip. According to the method for manufacturing a wafer-level glass-on-chip image sensor of the present invention, first, a wafer including a plurality of image-sensing chips is provided, and each image
1241018 五、發明說明(3) 像感測晶片係具有一主動面及一背面,每一主動面係形成 有一感測區及複數個凸塊,該些凸塊係設於該些影像感測 · · '· 晶片之該些主動面周邊,再提供一包含有複數個基板單元 γ 之玻璃基板,該玻璃基板係具有一第一表面及一第二表 · 面’該些基板單元之間係定義有複數個切割線,每一基板 · 單元係具有複數個電性導通孔,該些電性導通孔係貫穿該 玻璃基板之該第一表面及該第二表面,並對應該些影像感 測晶片之該些凸塊,該玻璃基板之該第一表面係形成有一 也、封層’該密封層係覆蓋該些基板單元之該些電性導通孔 與該些切割線,之後,貼合該玻璃基板與該晶圓,使得該 些衫像感測晶片之該些凸塊與該些基板單元之該些電性導 通孔電性連接,之後,植接複數個銲球於該玻璃基板之該 第二表面’該些銲球係與該些電性導通孔電性連接,再切 、 割該玻璃基板與該晶圓,以完成該晶圓級玻璃覆晶影像感 測器。 -【實施方式】 參閱所附圖式,本創作將列舉以下之實施例說明。 依本發明之一具體實施例,一種晶圓級玻璃覆晶影像 感測器之製造方法如下所述,請參閱第丨A圖,首先,提供 一包含有複數個影像感測晶片11之晶圓1 0,該些影像感測 日曰片11係為一種光感測晶片〔〇ptical sensing chip〕、 電何耦合裝置〔charge coupled device,CCD〕、互補式 金属氧化半導體〔complementary metal oxide semiconductor,CMOS〕或光電二極體〔photodiode〕, ^ΗΠ·Β 第10頁 1241018 五、發明說明(4) 每一影像感測晶片I1係具有一主動面12及一背面13,每一 主動面1 2係形成有一感測區1 4及複數個凸塊1 5 ’該些凸塊 1 5係設於該些影像感測晶片11之主動面12周邊’較佳地’ 該些影像感測晶片11之主動面12係形成有複數個擋堤16 〔d a m〕,其係設於該些影像感測晶片11之感測區1 4與凸 塊1 5之間,且該些影像感測晶片11之背面1 3係形成有一背 膠保護層17 ;再請參閱第1’提供一包含有複數個基板 單元21之玻璃基板20,該玻璃基板2〇之尺寸係等於該晶圓1241018 V. Description of the invention (3) The image sensing chip has an active surface and a back surface. Each active surface is formed with a sensing area and a plurality of bumps, and the bumps are provided in the image sensing. · '· Around the active surfaces of the wafer, a glass substrate including a plurality of substrate units γ is provided, and the glass substrate has a first surface and a second surface · Surface' is defined between the substrate units There are a plurality of cutting lines, and each substrate · unit system has a plurality of electrical vias, and the electrical vias penetrate the first surface and the second surface of the glass substrate, and correspond to the image sensing wafers. For the bumps, the first surface of the glass substrate is formed with a sealing layer. The sealing layer covers the electrical vias and the cutting lines of the substrate units, and then the glass is bonded. The substrate and the wafer, such that the bumps of the shirt-like sensing wafer are electrically connected to the electrical vias of the substrate units, and then a plurality of solder balls are implanted on the glass substrate. Two surfaces' the solder balls are related to the Electrically conductive vias is electrically connected, and then cut, the cut wafer with the glass substrate, to complete the wafer level image sensor chip on glass filter. -[Embodiment] With reference to the attached drawings, the present invention will enumerate the following embodiment descriptions. According to a specific embodiment of the present invention, a method for manufacturing a wafer-level glass-on-chip image sensor is described below. Please refer to FIG. 丨 A. First, a wafer including a plurality of image sensing chips 11 is provided. 1 0, the image sensing day 11 is a light sensing chip [ooptical sensing chip], a charge coupled device (CCD), complementary metal oxide semiconductor (complementary metal oxide semiconductor, CMOS) ] Or photodiode, ^ ΗΠ · Β Page 10 1241018 V. Description of the invention (4) Each image sensing chip I1 has an active surface 12 and a back surface 13, each active surface 12 series A sensing area 14 and a plurality of bumps 15 are formed. The bumps 15 are disposed on the periphery of the active surface 12 of the image sensing wafers 11 'preferably' and are active on the image sensing wafers 11. The surface 12 is formed with a plurality of dams 16 [dam], which are disposed between the sensing regions 14 and the bumps 15 of the image sensing chips 11, and the back surface 1 of the image sensing chips 11 3 series is formed with a protective adhesive layer 17; see also 1 'mention A substrate comprising a plurality of cells 21 of the glass substrate 20, the glass substrate dimensions are equal 2〇 of the wafer
1 0之尺寸,且該些基板單元2 1之尺寸亦等於該些影像感測 晶片11之尺寸,該玻璃基板係具有一第一表面22及一第 立表面2 3,該些基板單元21之間係定義有複數個切割線 24,每一基板單元21係具有複數個電性導通孔25,該些電 性導通孔25係貫穿該玻璃基板20之第一表面22及第二表面 2 3,並對應該些影像感測晶片11之凸塊1 5,該玻璃基板2 0 之第一表面2 2係形成有一密封層2 6,該密封層2 6係覆蓋該 些基板單元21之電性導通孔25與切割線24,該密封層26係 可為Β階異方性導電膠〔B-stage anisotropic conductive paste,B-stage ACP〕或異方性導電膜 〔anisotropic conductive film,ACF〕,當該密封層 26 係為β階異方性導電膠,其係以印刷形成於該玻璃基板2 〇 之第一表面2 2,並經過第一階段烘烤,以降低其流動性, 當该饮封層2 6係為異方性導電膜時,其係直接貼設於該玻 璃基板20之第一表面22,該玻璃基板2〇之第二表面23係形 成有複數個重分配跡線2 7,其係連接該些電性導通孔2 5,10, and the size of the substrate units 21 is also equal to the size of the image sensing wafers 11. The glass substrate has a first surface 22 and a first vertical surface 23. The system defines a plurality of cutting lines 24, and each substrate unit 21 has a plurality of electrical vias 25, and the electrical vias 25 pass through the first surface 22 and the second surface 23 of the glass substrate 20, Corresponding to the bumps 15 of the image sensing wafers 11, a sealing layer 26 is formed on the first surface 22 of the glass substrate 20, and the sealing layer 26 covers the electrical conduction of the substrate units 21. The hole 25 and the cutting line 24. The sealing layer 26 may be a B-stage anisotropic conductive paste (B-stage ACP) or an anisotropic conductive film (ACF). The sealing layer 26 is a β-order anisotropic conductive adhesive, which is formed on the first surface 22 of the glass substrate 20 by printing and is baked in the first stage to reduce its fluidity. When 2 6 is an anisotropic conductive film, it is directly attached to the glass substrate 20 A surface 22, second surface 23 of the glass substrate 2〇 lines formed with a plurality of redistribution traces 27, connected to the plurality of lines which are electrically conductive vias 25,
麵 第11頁 1241018________ 明說明(5) 該些•重分配跡線2 7係為扇出〔f a η o u t〕,以增加間距,Page 11 1241018________ Explanation (5) These • Redistribution traces 2 7 are fan-out [f a η o u t] to increase the spacing,
如果該些影像感測晶片1 1之感測區1 4係接近整個主動面1 2 之面積時’即該些影像感測晶片11之凸塊1 5離該些影像感 測晶片11之側邊很接近時,且該些凸塊1 5之間距夠大時, 該玻璃基板20之第二表面23即不需形成該些重分配跡線 27 ;再請參閱第1C圖,貼合該玻璃基板20與該晶圓10,使 得該些影像感測晶片11之凸塊1 5與該些基板單元21之電性 導通孔25電性連接,且該些影像感測晶片11之感測區1 4與 該些基板單元2 1係形成有一密閉空間,在本實施例中,貼 合該玻璃基板2 0與該晶圓1 0係在氮氣或惰性氣體之環境下 作業,故該些影像感測晶片11之感測區1 4與該些基板單元 1 4之間係填充有氮氣與惰性氣體之其中之一;再請參閱第 1D圖,植接複數個銲球30於該玻璃基板20之第二表面23之 重分配跡線2 7或電性導通孔2 5,以與該些電性導通孔2 5電 性連接;再請參閱第1E圖,切割該玻璃基板2 0與該晶圓 1 0,以完成該晶圓級玻璃覆晶影像感測器,切割該玻璃基 板2 0與該晶圓1 0之方法係選自於雷射切割、鑽石刀切割與 喷砂切割之其中之一。 由於該些基板單元2 1之尺寸係等於該些影像感測晶片 11之尺寸,可完全保護該些影像感測晶片11之主動面丨2, 而且製造出之影像感測器之尺寸可完全等於該些影像感測 晶片11之尺寸,而在製造過程中,該玻璃基板20之尺寸係 等於該晶圓10之尺寸,易於搬運、處理,且治具可共用, 此外,該密封層26係覆蓋該些基板單元21之間之切割線If the sensing areas 1 4 of the image sensing chips 11 are close to the area of the entire active surface 12, that is, the bumps 15 of the image sensing chips 11 are away from the sides of the image sensing chips 11 When they are very close, and when the distance between the bumps 15 is sufficiently large, the second surface 23 of the glass substrate 20 does not need to form the redistribution traces 27; then refer to FIG. 1C and attach the glass substrate. 20 and the wafer 10, so that the bumps 15 of the image sensing wafers 11 are electrically connected to the electrical vias 25 of the substrate units 21, and the sensing areas 1 4 of the image sensing wafers 11 A closed space is formed with the substrate units 21, and in this embodiment, the bonding of the glass substrate 20 and the wafer 10 is performed in an environment of nitrogen or inert gas, so the image sensing wafers The sensing area 14 of 11 and the substrate units 14 are filled with one of nitrogen and inert gas; referring to FIG. 1D again, a plurality of solder balls 30 are implanted on the second of the glass substrate 20 The redistribution traces 27 or electrical vias 25 of the surface 23 are electrically connected to the electrical vias 25; please refer to FIG. 1E again Cutting the glass substrate 20 and the wafer 10 to complete the wafer-level glass-on-chip image sensor. The method of cutting the glass substrate 20 and the wafer 10 is selected from laser cutting, diamond One of knife cutting and sand blasting cutting. Since the size of the substrate units 21 is equal to the size of the image sensing wafers 11, the active surfaces of the image sensing wafers 11 can be completely protected, and the size of the manufactured image sensor can be completely equal to The size of the image sensing wafers 11, and in the manufacturing process, the size of the glass substrate 20 is equal to the size of the wafer 10, which is easy to handle and handle, and the fixtures can be shared. In addition, the sealing layer 26 is covered Cutting lines between the substrate units 21
第12頁 1241018 五、發明說明(6) 2 4,在切割該玻璃基板2 0與該晶圓1 〇時,該密封層2 6係可 避免該玻璃基板20之第一表面22產生背崩〔chipping〕, 而設於該些影像感測晶片11之 些擋堤1 6,可避免貼合該玻璃 封層26覆蓋至該些影像感測晶 染該些影像感測晶片11之感測 本發明之保護範圍當視後 為準’任何熟知此項技藝者, 圍内所作之任何變化與修改, 感測區14與凸塊15之間之該 基板20與該晶圓丨〇時,該密 片11之感測區1 4,而不會污 區14。 附之申請專利範圍所界定者 在不脫離本發明之精神和範 均屬於本發明之保護範圍。Page 1212418 V. Description of the invention (6) 2 4. When the glass substrate 20 and the wafer 10 are cut, the sealing layer 26 can prevent the first surface 22 of the glass substrate 20 from collapsing. chipping], and the barriers 16 provided on the image sensing chips 11 can avoid the lamination of the glass sealing layer 26 to cover the image sensing crystals and the sensing of the image sensing chips 11 The scope of protection shall be deemed to be 'anyone skilled in the art, any changes and modifications made within the scope, when the substrate 20 and the wafer between the sensing area 14 and the bump 15, the secret film 11 of the sensing area 1 4 without staining the area 14. Those defined by the scope of the appended patents shall fall within the protection scope of the invention without departing from the spirit and scope of the invention.
1241018 圖式簡單說明 【圖式簡單說明】 第1 A至1 E圖:依據本發明之一具體實施例,一種晶圓級玻 璃覆晶影像感測器之製造方法,一影像感測 晶片在製造過程中之截面示意圖。 元件符號簡單說明: 10 晶圓 11影像感測晶片1 2 14感測區 15 1 7背膠保護層 2 0玻璃基板 21 基板單元 22 24 切割線 25 2 7 重分配跡線 3 0銲球 主動面 凸塊 13背面 16擋堤 第一表面 電性導通孔 23 第二表面 2 6密封層 Φ1241018 Brief description of the drawings [Simplified description of the drawings] Figures 1 A to 1 E: According to a specific embodiment of the present invention, a method for manufacturing a wafer-level glass-on-chip image sensor, an image sensing chip is being manufactured. Schematic cross-section during the process. Simple explanation of component symbols: 10 wafer 11 image sensor wafer 1 2 14 sensing area 15 1 7 adhesive protection layer 2 0 glass substrate 21 substrate unit 22 24 cutting line 25 2 7 redistribution trace 3 0 active surface of solder ball Back side of bump 13 16 Bank first surface Electrical via 23 Second surface 2 6 Sealing layer Φ
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TWI393197B (en) * | 2008-07-16 | 2013-04-11 | Chipmos Technoligies Inc | Chip package |
JP5389970B2 (en) | 2012-03-26 | 2014-01-15 | シャープ株式会社 | Imaging module and imaging module manufacturing method |
JP6185813B2 (en) * | 2013-09-30 | 2017-08-23 | 三星ダイヤモンド工業株式会社 | Method and apparatus for dividing wafer laminate for image sensor |
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