TWM248160U - Image sensor for avoiding sensing area being contaminated - Google Patents

Image sensor for avoiding sensing area being contaminated Download PDF

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Publication number
TWM248160U
TWM248160U TW92220555U TW92220555U TWM248160U TW M248160 U TWM248160 U TW M248160U TW 92220555 U TW92220555 U TW 92220555U TW 92220555 U TW92220555 U TW 92220555U TW M248160 U TWM248160 U TW M248160U
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Taiwan
Prior art keywords
sensing area
image
contaminated
image sensor
preventing
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TW92220555U
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Chinese (zh)
Inventor
Ming-Liang Huang
Yeong-Ching Chao
John Liu
Yau-Rung Li
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Chipmos Technologies Inc
Chipmos Technologies Bermuda
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Priority to TW92220555U priority Critical patent/TWM248160U/en
Publication of TWM248160U publication Critical patent/TWM248160U/en

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Description

M248160 四、創作說明(l) 【新型所屬之技術領域】 本創作係有關於一種影像感測器,特別係有關於一種 防止影像感測晶片之感測區被污染之影像感測器。 【先前技術】 隨著科技的發展,愈來愈多的個人化手攜式電子產品 都會使用到影像感測器,例如數位相機〔DSC〕、數位攝 影機、手機及個人數位助理〔PDA〕等,習知之影像感測 器係將一影像感測晶片,例如互補金屬氧化半導體 〔complementary metal oxide semi conductor,M248160 4. Creation Description (l) [Technical Field to which the New Type belongs] This creation relates to an image sensor, and in particular to an image sensor that prevents the sensing area of the image sensing chip from being contaminated. [Previous technology] With the development of technology, more and more personal handheld electronic products will use image sensors, such as digital cameras (DSC), digital cameras, mobile phones and personal digital assistants (PDA), etc. The conventional image sensor is an image sensor chip, such as a complementary metal oxide semi conductor,

CMOS〕,裝設於一容晶穴内,該容晶穴係可為一導線架或 硬質印刷電路板形成之預模體〔pre-mold〕,或為一陶資^ 基板形成之凹槽,再以一透明蓋密封,而在密封影像感測 晶片之空間内通常係為真空或填充有惰性氣體,以防止水 氣或塵粒侵入。 美國 係包含一 封膠,該 感測區, 片並覆蓋 自動接合 其係設於 該影像感 該些接合 膠係設於 影像感測晶片、一密封板、複數個内引腳及一密 影像感測晶片係具有一表面,該表面係形成有一 用以感測影像,該密封板係固設於該影像感測晶 該影像感測晶片之感測區,該些内引腳係為卷帶 〔tape automated bonding,TAB〕之内引腳, 該密封板與該影像感測晶片之表面之間,並指向 測晶片之感測區,每一内引腳係具有一接合:: 端係設於該影像感測晶片之感測區之外,該 該影像感測晶片之感測區之外,I完整圍:該些 M248160 沒、創作說明(2) 内引腳之接合端,以 測晶片之感測區,然 易溢流至該影像感測 感測影像。 【新型内容】 本創作之主要目 之影像感測器,利用 測晶片之主動面,該 測區與一密封膠之間 片之感測區。 本創作之次一目 之影像感測器,利用 擋堤係對應第一擋堤 感測區。 依本創作之防止 要包含有一影像感測 光片,其中該影像感 影像感測晶片 複數個凸塊, 與凸塊之間, 密封該些内引腳之接合端與該影像感 而’在壓合該密封板時,該密封膠容 晶片之感測區,而影響該影像感測器 的係在於提供一種防止感測區被污染 一第一擋堤〔dam〕形成於一影像感 第一擋堤係設於該影像感測晶片之感 ’以避免該密封膠污染該影像感測晶 的係在於提供一種防止感測區被污染 第一擋堤形成於一透光片,該第二 ’以避免密封膠污染影像感測晶片之 感測區被污 晶片 污染之 薄膜基 具有一 影像感測器,其係主 一密封膠及一透 之主動 該第一 並圍繞 板係包含有一第一介 腳,該薄膜基板係具 窗口係貫穿該薄骐基 該影像感測晶片之感 測晶片係 面係形成有一感 擋堤係設 該影像感 電層、一 有一上表 板之上表 測區,該 於該影 測晶片 第二介面、一 面與下 些内引 板、一 主動面 測區、 像感測 之感測 電層及 下表面 表面, 腳係形 及一背 一第一 晶片之 區,該 複數個 及一窗 該窗口 成於該 面,該 擋堤及 感測區 薄膜基 内引口,該 係對應 薄膜基 mm ΙΙΗ» M248160 四、創作說明(3) 一 - 板之第一介電層與第二介電層之間,該些内引腳係顯露於 該第一介電層,並與該影像感測晶片之凸塊接合,該密封 膠係形成於該影像感測晶片之主動面周邊,該密封膠係包 覆該影像感測晶片之凸塊’且被該第一擋堤阻隔在該影像 感測晶片之感測區外’即該第一擋堤係設於該影像感測晶 片之感測區與該密封膠之間,該透光片係覆蓋該影像感測 晶片之感測區。 ~ ' 【實施方式】 參閱所附圖式,本創作將列舉以下之實施例說明。 依本創作之第一具體實施例,請參閲第1圖,一種防 止感測區被污染之影像感測器1 〇 〇,其係主要包含有一影 像感測晶片110、一薄膜基板120、一密封膠130及一透光 片1 4 0,其中該影像感測晶片11 〇係為一種光感測晶片 〔opt i cal sensing chip〕、電荷耦合裝置〔Charge coupled device,CCD〕、互補式金屬氧化半導體 C complementary metal oxide semiconductor,CMOS〕 或光電二極體〔photodiode〕,該影像感測晶片no係具 有一主動面111及一背面11 2,該影像感測晶片11 〇之主動 面111係形成有一感測區11 3、一第一擋堤11 4〔 dam〕及複 數個凸塊11 5,該第一擋堤11 4係設於該影像感測晶片11 〇 Λ 之感測區11 3與凸塊11 5之間,並圍繞該影像感測晶片丨丨〇 之感測區11 3,該第一擋堤11 4之材質係為具彈性之膠體, 例如橡膠或矽膠,該薄膜基板120係具有一上表面121、一 下表面122及一窗口 123,該窗口123係貫穿該薄膜基板120 、CMOS], installed in a cavity, which can be a pre-mold formed by a lead frame or a hard printed circuit board, or a groove formed by a ceramic substrate. It is sealed with a transparent cover, and the space in which the image sensing chip is sealed is usually vacuum or filled with an inert gas to prevent moisture or dust particles from invading. The United States Department includes a piece of glue, the sensing area, a sheet and a cover that automatically joins it. The glue is provided on the image sensor. The glue is provided on the image sensor chip, a sealing plate, a plurality of inner pins, and a dense image sensor. The test chip has a surface formed with a surface for sensing an image, and the sealing plate is fixedly disposed on a sensing area of the image sensing crystal and the image sensing chip, and the inner pins are tapes [ tape automated bonding (TAB), between the sealing plate and the surface of the image sensing chip, and pointing to the sensing area of the sensing chip, each internal pin has a bonding :: end is located in the Outside the sensing area of the image sensing chip, outside the sensing area of the image sensing chip, I complete the circumference: the M248160, the joint ends of the inner pins of the creative instructions (2) to measure the chip's sensing The measurement area, however, easily overflows to the image sensing sensing image. [New content] The main purpose of this creation is the image sensor, which uses the active surface of the test chip to detect the area between the test area and a sealant. The next-generation image sensor of this creation uses the bank system to correspond to the first bank sensing area. The prevention according to this creation should include an image sensing light sheet, wherein the image sensing image sensing chip has a plurality of bumps, and between the bumps, the joint ends of the inner pins and the image sense are sealed in When the sealing plate is used, the sealing area of the sealant-containing wafer affects the image sensor to prevent the sensing area from being polluted. A first bank (dam) is formed on an image-sensing first bank. It is provided on the sense of the image sensing chip to prevent the sealant from contaminating the image sensing crystal. The purpose is to provide a method to prevent the sensing area from being polluted. The first bank is formed on a light-transmitting sheet, and the second is to avoid The sensing region of the sealant contaminating the image sensing chip is contaminated with a film substrate having an image sensor, which is mainly a sealant and a transparent active first and includes a first prong around the board system. The thin film substrate has a window penetrating through the thin wafer base of the image sensing wafer, and a surface of the sensing wafer is formed with a sensing bank, the image sensing layer, and an upper measuring area on the upper plate. Wafer Cap Two interfaces, one side and the next inner lead plate, an active surface measurement area, a sensing electrical layer and the lower surface surface of the image sensor, a foot shape and a region with a first chip on the back, the plurality and a window should The window is formed on this surface, the bank and the sensing area of the thin film base entrance, which correspond to the thin film base mm ΙΙΗ »M248160 IV. Creative Instructions (3) A-the first dielectric layer and the second dielectric layer of the board In between, the inner pins are exposed on the first dielectric layer and are bonded to the bumps of the image sensing chip. The sealant is formed around the active surface of the image sensing chip. The sealant is The bumps covering the image sensing chip are blocked by the first bank outside the sensing region of the image sensing chip. That is, the first bank is provided in the sensing region of the image sensing chip and Between the sealants, the light-transmitting sheet covers the sensing area of the image sensing chip. ~ '[Embodiment] With reference to the attached drawings, the present invention will enumerate the following embodiment descriptions. According to the first specific embodiment of this creation, please refer to FIG. 1. An image sensor 100 for preventing a sensing area from being contaminated, which mainly includes an image sensing chip 110, a thin film substrate 120, a The sealant 130 and a light transmissive sheet 140, wherein the image sensing chip 110 is an optical sensing chip (opt i cal sensing chip), a charge coupled device (CCD), and complementary metal oxidation Semiconductor C complementary metal oxide semiconductor (CMOS) or photodiode. The image sensing chip no has an active surface 111 and a back surface 112. The active surface 111 of the image sensing chip 111 is formed with a Sensing area 11 3, a first bank 11 4 [dam] and a plurality of bumps 115, the first bank 11 4 is provided in the sensing region 11 3 of the image sensing chip 11 〇Λ and the convex Between the blocks 115 and surrounding the sensing area 11 3 of the image sensing chip 丨 丨 〇, the material of the first bank 11 4 is a colloid with elasticity, such as rubber or silicone, and the film substrate 120 has An upper surface 121, a lower surface 122, and a window 123, the window 123 penetrates the thin film substrate 120,

第10頁 M248160 創作說明(4) 之上表面1 2 1與下表面1 2 2,該窗口 1 2 3係對應該影像感測 晶片1 1 0之感測區1 1 3,該薄膜基板1 2 〇係包含有一第一介 電層124、一第二介電層us及複數個内引腳126,該第一 介電層1 2 4係為防銲層,該第二介電層丨2 5之材質係為具有 可撓性之聚亞醢胺〔polyimide,PI〕或聚酯 〔polyester,PET〕,在本實施例中,該薄膜基板i 2〇之 第一介電層1 2 4係形成有複數個開口 1 2 7,該些内引腳1 2 6 係為一金屬箔層,其係形成於該薄膜基板丨2 〇之第一介電 層1 2 4與第二介電層1 2 5之間,該些内引腳1 2 6係顯露於該 第一介電層124之開口 127,以作為該薄膜基板120之接合 端’並與該影像感測晶片11 〇之凸塊丨丨5接合,該密封膠 I 30係形成於該影像感測晶片丨丨〇之主動面丨n周邊,該密 封膠130選自於異方性導電膠〔anis〇tr〇pic conductive paste ’ACP〕與覆晶底部填充材〔underfilling material〕之其中之一,其係包覆該影像感測晶片11〇之 凸塊11 5,且被該第一擋堤11 4阻隔在該影像感測晶片1工〇 之感測區11 3外,即該第一擋堤11 4係設於該影像感測晶片 II 0之感測區11 3與該密封膠1 3 0之間,該透光片1 4 0係為形 成有一紅外線;慮光層141之玻璃或壓克力〔acryiic〕,用 以濾除紅外線,防止產生雜訊或偽色,該透光片1 4 〇係覆 蓋該影像感測晶片11 0之感測區11 3,在本實施例中,該透 光片140係設有一第二擋堤142,該第二擋堤142係對應於 該影像感測晶片11 0之第一擋堤11 4,該第二擋堤14 2之材 質係為具彈性之橡膠或矽膠等材質,而該透光片14〇與該 M248160 四、創作說明(5) 薄膜基板120之間係形成有一黏膠層150,以貼合該透光片 140於該薄膜基板120之上表面121,該黏膠層150係選自於 光感固化膠〔photocurab 1 e paste〕與B 階〔B-stage〕固 化膠之其中之一。 該影像感測晶片1 1 0之感測區1 1 3與凸塊11 5係形成有 該第一擋堤114,當該密封膠140密封該影像感測晶片110 之感測區1 1 3,並包覆該影像感測晶片11 0之凸塊11 5時, 由於該第一擋堤1 1 4係設於該影像感測晶片1 1 〇之感測區 113與該密封膠140之間,以避免該密封膠140污染該影像 感測晶片11 0之感測區11 3,此外,該透光片1 4 0係形成有 該第二擋堤142,該第二擂堤142係對應第一擋堤114,不 僅可避免該密封膠140或該黏膠層1 50污染該影像感測晶片 11 0之感測區11 3,更能增進該感測區11 3與該透光片1 40之 密封性。 依本創作之第二具體實施例,請參閱第2圖,一種防 止感測區被污染之影像感測器2 0 0,其係主要包含有一影 像感測晶片210、一薄膜基板220、一密封膠230及一透光 片240,該影像感測晶片210係具有一主動面211及一背面 2 1 2,該影像感測晶片2 1 0之主動面2 11係形成有一感測區 213及複數個凸塊214,該薄膜基板220係具有一上表面 221、一下表面222及一貫穿該薄膜基板2 20之上表面221與 下表面222之窗口 223,該窗口 223係對應該影像感測晶片 210之感測區213,該薄膜基板220係包含有一第一介電層 224、一第二介電層225及複數個内引腳226,在本實施例Page 10 M248160 Creation instructions (4) Upper surface 1 2 1 and lower surface 1 2 2 The window 1 2 3 is the sensing area 1 1 3 corresponding to the image sensing chip 1 1 0, and the film substrate 1 2 〇 series includes a first dielectric layer 124, a second dielectric layer us, and a plurality of internal pins 126, the first dielectric layer 1 2 4 is a solder resist layer, and the second dielectric layer 丨 2 5 The material is flexible polyimide [PI] or polyester [PET]. In this embodiment, the first dielectric layer 1 2 4 of the thin film substrate i 2 0 is formed. There are a plurality of openings 1 2 7. The inner pins 1 2 6 are a metal foil layer, which are formed on the thin film substrate 1 2 4 and the first dielectric layer 1 2 4 Between 5, the inner pins 1 2 6 are exposed in the opening 127 of the first dielectric layer 124 to serve as the bonding ends of the thin film substrate 120 and the bumps of the image sensing chip 11 丨 丨5 joints, the sealant I 30 is formed around the active surface of the image sensing chip 丨 丨 〇, and the sealant 130 is selected from anisotropic conductive paste [ACP] One of the underfilling material of the flip chip is a bump 115 which covers the image sensor wafer 110 and is blocked by the first bank 11 4 on the image sensor wafer. Outside the sensing area 11 3, that is, the first bank 11 4 is located between the sensing area 11 3 of the image sensing chip II 0 and the sealant 1 3 0, and the light transmitting sheet 1 4 0 is In order to form an infrared light; the glass or acrylic (acryiic) of the light-shielding layer 141 is used to filter out infrared rays and prevent noise or false colors. Sensing area 113. In this embodiment, the light-transmitting sheet 140 is provided with a second bank 142, and the second bank 142 is a first bank 11 4 corresponding to the image sensing chip 110. The material of the second bank 14 2 is a material such as elastic rubber or silicone, and the light-transmitting sheet 14 and the M248160 IV. Creation Instructions (5) An adhesive layer 150 is formed between the film substrate 120, The light-transmitting sheet 140 is attached to the upper surface 121 of the film substrate 120. The adhesive layer 150 is selected from the group consisting of photocurab 1 e paste and B. B-stage is one of the curing adhesives. The first barrier 114 is formed in the sensing region 1 1 3 of the image sensing chip 1 10 and the bump 1 115. When the sealant 140 seals the sensing region 1 1 3 of the image sensing chip 110, When the bumps 115 of the image sensing chip 110 are covered, since the first bank 1 14 is disposed between the sensing region 113 of the image sensing chip 1 10 and the sealant 140, In order to prevent the sealant 140 from contaminating the sensing area 11 3 of the image sensing chip 110, the translucent sheet 1 40 is formed with the second bank 142, and the second bank 142 corresponds to the first The bank 114 can not only prevent the sealant 140 or the adhesive layer 1 50 from contaminating the sensing area 11 3 of the image sensing chip 110, but also enhance the sensing area 11 3 and the light transmitting sheet 1 40. Tightness. According to the second specific embodiment of this creation, please refer to FIG. 2, an image sensor 200 for preventing the sensing area from being contaminated, which mainly includes an image sensing chip 210, a thin film substrate 220, and a seal. Adhesive 230 and a light-transmitting sheet 240. The image sensing chip 210 has an active surface 211 and a back surface 2 1 2. The active surface 2 11 of the image sensing chip 2 1 0 forms a sensing area 213 and a plurality of Bumps 214, the thin film substrate 220 has an upper surface 221, a lower surface 222, and a window 223 penetrating the upper surface 221 and the lower surface 222 of the thin film substrate 220, and the window 223 corresponds to the image sensor chip 210 In the sensing region 213, the thin film substrate 220 includes a first dielectric layer 224, a second dielectric layer 225, and a plurality of inner pins 226. In this embodiment,

第12頁 M248160 四、創作說明(6) 中,該第一介電層224之材質係為具有可撓性之聚亞醯胺 〔polyimide,PI〕或聚酯〔polyester,PET〕,該第二 介電層225係為防銲層,該些内引腳226係為一金屬箔層, 其係形成於該薄膜基板220之第一介電層224與第二介電層 225之間,每一内引腳226係具有一接合端227,該些内引Page 12 M248160 4. In the creation description (6), the material of the first dielectric layer 224 is flexible polyimide (PI) or polyester [polyester, PET], and the second The dielectric layer 225 is a solder resist layer, and the inner pins 226 are metal foil layers, which are formed between the first dielectric layer 224 and the second dielectric layer 225 of the thin film substrate 220. The inner pin 226 has a joint end 227. The inner leads

腳2 26之接合端227係延伸至該薄膜基板2 20之窗口 223,並 與該影像感測晶片210之凸塊214接合,該密封膠230係形 成於該影像感測晶片2 1 0之主動面2 11周邊,並包覆該影像 感測晶片210之凸塊214,該透光片240係覆蓋該影像感測 晶片2 1 0之感測區2 1 3,在本實施例中,該透光片2 4 0係形 成有一擋堤250,該擋堤250之材質係為具彈性之膠體,例 如橡膠或石夕膠’該擋堤2 5 〇係設於該影像感測晶片2 1 〇之感 測區213與該密封膠23〇之間,而該透光片240與該薄膜基 板220之間係形成有一黏膠層26〇,以貼合該透光片24〇於 該薄膜基板220之上表面221。The bonding end 227 of the foot 2 26 is extended to the window 223 of the thin film substrate 2 20 and is bonded to the bump 214 of the image sensing chip 210. The sealant 230 is formed on the active part of the image sensing chip 2 1 0 The periphery of the surface 2 11 is covered with the bump 214 of the image sensing chip 210, and the light transmitting sheet 240 covers the sensing area 2 1 3 of the image sensing chip 2 1 0. In this embodiment, the transparent The light sheet 2 4 0 is formed with a bank 250, and the material of the bank 250 is an elastic colloid, such as rubber or stone rubber. The bank 2 5 0 is provided on the image sensing chip 2 1 0 An adhesive layer 26 is formed between the sensing region 213 and the sealant 23 °, and an adhesive layer 26 is formed between the light-transmitting sheet 240 and the thin-film substrate 220 to adhere the light-transmitting sheet 240 to the film substrate 220.上 表面 221。 Upper surface 221.

依上述之第一實施例或第二實施例之中,該些内引腳 係由薄膜基板所形成,在不脫離本創作之精神下,該些内 引腳係可由導線架所形成,此外,在第二實施例中,該擔 堤25並不限定形成於該透光片240,該擋堤250亦可先形 成於該像感測晶片21〇之主動面211,以達到避免該密封膠 230巧染該影像感測晶片210之感測區213之功效。 本創作之保護範圍當視後附之申請專利範圍所界定者 為;’任何熟知此項技藝者,在不脫離本創作之精神和範 圍内所作之任何變化與修改,均屬於本創作之保護範圍。According to the first embodiment or the second embodiment described above, the inner pins are formed of a thin film substrate. Without departing from the spirit of the present invention, the inner pins may be formed of a lead frame. In addition, In the second embodiment, the bank 25 is not limited to be formed on the light-transmitting sheet 240, and the bank 250 may also be formed on the active surface 211 of the image sensor wafer 21 to avoid the sealant 230. The function of the sensing area 213 of the image sensing chip 210 is ingeniously dyed. The scope of protection of this creation shall be defined by the scope of the attached patent application; 'Any person skilled in the art who makes changes and modifications without departing from the spirit and scope of this creation shall fall within the scope of protection of this creation .

M248160 圖式簡單說明 【圖式簡單說明】 第1圖··依據本創作之第一具體實施例,一種防止感測區 被污染之影像感測器之截面示意圖;及 第2 圖:依據本創作之第二具體實施例,一種防止感測區 被污染之影像感測器之截面示意圖。 21 1 主動面 214 凸塊 221 上表面 224第一介電層 227接合端 111 主動面 112 11 4第一擋堤 115 121 上表面 122 124第一介電層 125 127 開口 141紅外線濾光層142第二擋堤 元件符號簡單說明 I 0 0影像感測器 II 0 影像感測晶片 11 3 感測區 120薄膜基板 123 窗口 126内引腳 130密封膠 140透光片 1 5 0 黏膠層 2 0 0 影像感測器 2 1 0影像感測晶片 2 1 3 感測區 220薄膜基板 223 窗口 226内引腳 230密封膠 240透光片 背面 凸塊 下表面 第二介電層 2 1 2 背面 2 2 2 下表面 225第二介電層 第14頁 M248160 圖式簡單說明 2 5 0 擋堤 2 6 0 黏膠層 it if iilii 第15頁M248160 Schematic description [Schematic description] Figure 1 · According to the first specific embodiment of this creation, a schematic cross-sectional view of an image sensor that prevents the sensing area from being contaminated; and Figure 2: Based on this creation A second specific embodiment is a schematic cross-sectional view of an image sensor for preventing the sensing area from being polluted. 21 1 active surface 214 bump 221 upper surface 224 first dielectric layer 227 joint end 111 active surface 112 11 4 first bank 115 121 upper surface 122 124 first dielectric layer 125 127 opening 141 infrared filter layer 142th Simple description of the symbols of the two barrier elements I 0 0 image sensor II 0 image sensor chip 11 3 sensing area 120 film substrate 123 pin 130 in window 126 sealant 140 transparent sheet 1 5 0 adhesive layer 2 0 0 Image sensor 2 1 0 Image sensor chip 2 1 3 Sensing area 220 Thin film substrate 223 Pin 230 in window 226 Sealant 240 Transparent sheet Back surface Bump lower surface Second dielectric layer 2 1 2 Back surface 2 2 2 Lower surface 225 Second dielectric layer Page 14 M248160 Simple illustration of the drawing 2 5 0 Bank 2 6 0 Adhesive layer it if iilii Page 15

Claims (1)

M248160 五、申請專利範圍 【申請專利範圍】 1 、一種防止感測區被污染之影像感測器,包含: 一影像感測晶片,其係具有一主動面,該影像感測晶 片之該主動面係形成有一感測區及複數個凸塊;M248160 5. Scope of patent application [Scope of patent application] 1. An image sensor for preventing the sensing area from being contaminated, including: an image sensing chip having an active surface, the active surface of the image sensing chip The system is formed with a sensing area and a plurality of bumps; 一薄膜基板,其係包含有一第一介電層、一第二介電 層及複數個内引腳,該薄膜基板係具有一上表面、一下 表面及一窗口 ,該窗口係貫穿該薄膜基板之該上表面與 該下表面,該窗口係對應該影像感測晶片之該感測區, 該些内引腳係形成於該薄膜基板之該第一介電層與該第 二介電層之間,每該些内引腳係顯露於該第一介電層, 並與該影像感測晶片之該些凸塊接合; 一密封膠,其係形成於該影像感測晶片之該主動面周 邊,該密封膠係包覆該影像感測晶片之該些凸塊; 一第一擋堤,其係設於該影像感測晶片之該感測區與 該密封膠之間;及 一透光片,其係覆蓋該影像感測晶片之該感測區。 2、 如申請專利範圍第1項所述之防止感測區被污染之影 像感測器,其中該第一擋堤之材質係為具彈性之膠體。 3、 如申請專利範圍第1項所述之防止感測區被污染之影 像感測器,其另包含一第二擋堤,其係設於該透光片, 並對應於該第一擋堤。A thin-film substrate includes a first dielectric layer, a second dielectric layer, and a plurality of inner pins. The thin-film substrate has an upper surface, a lower surface, and a window, and the window runs through the thin-film substrate. The upper surface and the lower surface, the window corresponds to the sensing area of the image sensing chip, and the inner pins are formed between the first dielectric layer and the second dielectric layer of the thin film substrate. Each of the inner pins is exposed on the first dielectric layer and is bonded to the bumps of the image sensing chip; a sealant is formed on the periphery of the active surface of the image sensing chip, The sealant covers the bumps of the image sensing chip; a first bank is provided between the sensing area of the image sensing chip and the sealant; and a light transmitting sheet, It covers the sensing area of the image sensing chip. 2. The image sensor for preventing the sensing area from being contaminated as described in item 1 of the scope of the patent application, wherein the material of the first bank is an elastic colloid. 3. The image sensor for preventing the sensing area from being contaminated as described in item 1 of the scope of the patent application, further comprising a second bank, which is provided on the light-transmitting sheet and corresponds to the first bank . 4、 如申請專利範圍第1項所述之防止感測區被污染之影 像感測器,其中該第一擋堤係圍繞該影像感測晶片之該 感測區。4. The image sensor for preventing the sensing area from being contaminated as described in item 1 of the scope of the patent application, wherein the first bank surrounds the sensing area of the image sensing chip. 第16頁 M248160 五、申請專利範圍 5、 如申請專利範圍第1項所述之防止感測區被污染之影 像感測器,其中該薄膜基板之該第一介電層係形成有複 數個開口 ,以顯露該内引腳。 6、 如申請專利範圍第1項所述之防止感測區被污染之影 像感測器,其中該内引腳係延伸至該薄膜基板之該窗 V 〇 7、 如申請專利範圍第1項所述之防止感測區被污染之影 像感測器,其另包含一黏膠層,其係形成於該薄膜基板 與該透光片之間。Page 16 M248160 5. Patent application scope 5. The image sensor for preventing the sensing area from being contaminated as described in item 1 of the patent application scope, wherein the first dielectric layer of the thin film substrate is formed with a plurality of openings To reveal the inner pin. 6. The image sensor for preventing the sensing area from being contaminated as described in item 1 of the scope of the patent application, wherein the inner pin extends to the window V of the thin film substrate. The image sensor for preventing the sensing area from being contaminated further includes an adhesive layer formed between the thin film substrate and the transparent sheet. 8、 如申請專利範圍第7項所述之防止感測區被污染之影 像感測器,其中該黏膠層係選自於光感固化膠 C pho tocurab 1 e paste 〕與 Bp 皆 C B- s t age 〕固 4匕膠之其 中之一0 9、 如申請專利範圍第1項所述之防止感測區被污染之影 像感測器,其中該密封膠係選自於異方性導電膠 〔anisotropic conduct i ve paste ,ACP 〕與覆晶底苦I5 填充材〔underfilling material 〕之其中之一。 1 0、如申請專利範圍第1項所述之防止感測區被污染之 影像感測器,其中該透光片係形成有一紅外線濾光 層。 1 1、一種防止感測區被污染之影像感測器,包含:8. The image sensor for preventing the sensing area from being contaminated as described in item 7 of the scope of the patent application, wherein the adhesive layer is selected from the group consisting of light-curing glue C pho tocurab 1 e paste] and Bp are both C B- st age] one of the four glues. 9. The image sensor for preventing the sensing area from being contaminated as described in item 1 of the patent application scope, wherein the sealant is selected from anisotropic conductive glue [ anisotropic conduct i ve paste [ACP] and underfilling material [5]. 10. The image sensor for preventing the sensing area from being contaminated as described in item 1 of the scope of patent application, wherein the transparent sheet is formed with an infrared filter layer. 1 1. An image sensor for preventing the sensing area from being contaminated, comprising: 一影像感測晶片,其係具有一主動面,該影像感測 晶片之該主動面係形成有一感測區及複數個凸塊; 複數個内引腳,其係與該影像感測晶片之該些凸塊An image sensing chip has an active surface, and the active surface of the image sensing chip is formed with a sensing area and a plurality of bumps; a plurality of inner pins are connected to the image sensing chip. Bumps 第17頁 M248160 五、申請專利範圍 接合; 一密封膠,其係形成於該影像感測晶片之該主動面 周邊,該密封膠係包覆該影像感測晶片之該些凸塊; 一擋堤,其係設於該影像感測晶片之該感測區與該 密封膠之間;及 一透光片,其係覆蓋該影像感測晶片之該感測區。 1 2、如申請專利範圍第1 1項所述之防止感測區被污染之 影像感測器,其中該些内引腳係由導線架形成。 1 3、如申請專利範圍第1 1項所述之防止感測區被污染之 影像感測器,其中該擋堤之材質係為具彈性之膠體。 1 4、如申請專利範圍第1 1項所述之防止感測區被污染之 φ 影像感測器,其中該擋堤係圍繞該影像感測晶片之該 感測區。 1 5、如申請專利範圍第1 1項所述之防止感測區被污染之 影像感測器,其中該密封膠係選自於異方性導電膠 , 〔anisotropic conductive paste ,ACP 〕與覆晶底部 填充材〔underfilling material 〕之其中之一。 1 6、如申請專利範圍第1 1項所述之防止感測區被污染 之影像感測器,其中該透光片係形成有一紅外線濾光 層。Page 17 M248160 V. Application for joint bonding; A sealant is formed around the active surface of the image sensing chip, and the sealant covers the bumps of the image sensing chip; a bank , Which is disposed between the sensing area of the image sensing chip and the sealant; and a light transmitting sheet, which covers the sensing area of the image sensing chip. 1 2. The image sensor for preventing the sensing area from being contaminated as described in item 11 of the scope of patent application, wherein the inner pins are formed by a lead frame. 1 3. The image sensor for preventing the sensing area from being contaminated as described in item 11 of the scope of patent application, wherein the material of the bank is an elastic colloid. 14. The φ image sensor for preventing the sensing area from being contaminated as described in item 11 of the scope of the patent application, wherein the bank surrounds the sensing area of the image sensing chip. 15. The image sensor for preventing the sensing area from being contaminated as described in item 11 of the scope of patent application, wherein the sealant is selected from the group consisting of anisotropic conductive paste (ACP) and flip chip One of the underfilling materials. 16. The image sensor for preventing the sensing area from being contaminated as described in item 11 of the scope of the patent application, wherein the transparent sheet is formed with an infrared filter layer. 第18頁Page 18
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102623414A (en) * 2012-04-11 2012-08-01 日月光半导体制造股份有限公司 Semiconductor package
CN110827681A (en) * 2018-08-14 2020-02-21 三星显示有限公司 Display device
CN113451253A (en) * 2020-03-25 2021-09-28 南茂科技股份有限公司 Thin film flip chip packaging structure
CN113526449A (en) * 2020-04-14 2021-10-22 鹰克国际股份有限公司 Chip packaging structure and manufacturing method thereof
TWI843580B (en) * 2022-11-11 2024-05-21 力成科技股份有限公司 Image sensor and manufacturing method thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102623414A (en) * 2012-04-11 2012-08-01 日月光半导体制造股份有限公司 Semiconductor package
CN110827681A (en) * 2018-08-14 2020-02-21 三星显示有限公司 Display device
CN113451253A (en) * 2020-03-25 2021-09-28 南茂科技股份有限公司 Thin film flip chip packaging structure
CN113526449A (en) * 2020-04-14 2021-10-22 鹰克国际股份有限公司 Chip packaging structure and manufacturing method thereof
TWI843580B (en) * 2022-11-11 2024-05-21 力成科技股份有限公司 Image sensor and manufacturing method thereof

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