TWI248665B - Image sensor package and method for manufacturing the same - Google Patents

Image sensor package and method for manufacturing the same Download PDF

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Publication number
TWI248665B
TWI248665B TW093137652A TW93137652A TWI248665B TW I248665 B TWI248665 B TW I248665B TW 093137652 A TW093137652 A TW 093137652A TW 93137652 A TW93137652 A TW 93137652A TW I248665 B TWI248665 B TW I248665B
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TW
Taiwan
Prior art keywords
wafer
image sensor
image sensing
sensor package
package structure
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TW093137652A
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Chinese (zh)
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TW200620583A (en
Inventor
Shih-Wen Chou
Yu-Tang Pan
Chung-Hung Lin
Emerson Chiu
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Chipmos Technologies Inc
Chipmos Technologies Bermuda
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Priority to TW093137652A priority Critical patent/TWI248665B/en
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Publication of TWI248665B publication Critical patent/TWI248665B/en
Publication of TW200620583A publication Critical patent/TW200620583A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Solid State Image Pick-Up Elements (AREA)

Abstract

An image sensor package is disclosed. An image sensor chip is disposed on a chip carrier. The image sensor chip has an active surface including a central photosensitive area and a peripheral area. A plurality of bonding pads on the peripheral area of the image sensor chip are electrically connected to the chip carrier by a plurality of bonding wires. The peripheral area and the bonding wires are covered with a soft compound. A glass cover is adhered by the soft compound to form a hermetic space between the glass cover and the central photosensitive area of the image sensor chip. Therefore, it can prevent a soak of an encapsulant onto the central photosensitive area.

Description

1248665 ΙΜ··ΙΙΙΙΙΙΙ· II ιι ,ι Μ ,,ι „ 五、發明說明（】） 【發明所屬之技術領域】 Μ π ί ΐ明係有關於一種影像感測器封裝構造’特別係有 1種避免影像感測晶片之中央感光區受污毕夕影偉忒 測器封襄構造及其製造方法。 J木〜 【先前技術】 苴封 封敦構造（image SenSQr package)， 哀（PLCC)或球格陣列封裝 # a\ ，感測品質之嚴格要求，即一影像感測\式係 =不可以有絲毫的粉塵（part ici e)與環 f :=央感光 在習知影像感測器封裝構造之設計上鱼制巧乐，如何 ”之方式確保該影像感測晶片之該中m ’以有效卻 乐，便是整個封裂製程最重要的關鍵。先區不受污 請參閱第1圖，在一傳統 中，-晶片載體U係具有：上表=感剛器封跋構造10 一影像感測晶片12係設置於該晶H及一下表面11b， 11a，該影像感測晶片12 片載體U之該上表面 12a係包含複數個銲墊12b及"一中主/動面12a，該主動面 12b係以複數個銲線13電性連央感曰光區12c，該些銲墊 14係形成於該影像感測晶片12之Λ aa片載體11，一樹脂 區&周圍，在該樹脂14之上方^主動面12a之中央感光 樹脂14係支撐該透光片15，該曰，'叹置有一透光片15，該 形成有-封膠體16，該封膠體丨曰:片之上表面lla係 係^復該影像感測晶片 1248665 五、發明說明（2) 1 2、該些銲線1 3以及該樹脂】4，並且包圍固定該透光片1「 於該樹脂1 4上，該封膠體1 6係為一點塗膠體，複數個卿= 1 7係設置於該晶片載體丨丨之該下表面丨1 b。其中，由於; 樹脂14係無足夠之強度密封保護該影像感測晶片丨2 Λ 央感光區1 2 c，因此在封膠過程中，該封膠體1 6係僅可 使用點塗膠體，若使用轉移成型（t r a n s jf e Γ ιη 0 | d丨n ^ > 法來形成—模封膠體（molding compound)，則該模封膠故 係會由該樹脂]4與該該透光片1 5之間隙滲入，導致該中$ 感光區1 2c受到污染，而產生不良品。 失 【發明内容】 本發明之主要目的係在於提供一種影像感測器封裝 造，一影像感測晶片之一主動面係包含有一中央感光=广 及一周邊區，一軟性膠體係覆蓋該周邊區並黏著固定二= 光片’而形成一攔壩（dam)構造，以使該透光片與該中~ 感光區之間形成一氣閉密封空間，避免一模封膠體 (molding compound)滲入而污染該中央感光區。 本發明之次一目的係在於提供一種影像感測器封带才 造之製造方法，一影像感測晶片之一主動面係包含有二中 央感光區以及一周邊區，在形成一模封膠體之前，係先提 供一軟性膠體於該周邊區並密封複數個銲線，該軟性膠體 係黏著固定一透光片於该影像感測晶片上，使得該透光片 與该影像感測晶片之a亥中央感光區之間形成—氣閉穷封空 間，該軟性膠體係成為該透光片之緩衝物，以避免在形成 一模封膠體時，因該透光片^貼於一模穴之一上表面，而1248665 ΙΜ··ΙΙΙΙΙΙΙ· II ιι , ι Μ , , ι „ V. OBJECT DESCRIPTION OF THE INVENTION ( 】 】 技术 ί 系 系 系 系 系 系 系 系 一种 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像Avoiding the image-sensing of the central photosensitive area of the image-sensing wafer. The structure and manufacturing method of the 毕 影 影 忒 忒 。 J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J Array package # a\ , the strict requirements of sensing quality, that is, an image sensing \ type system = can not have the slightest dust (part ici e) and ring f : = central photosensitive in the conventional image sensor package construction Designing a fish-made craftsmanship, how to ensure that the image sensing chip's m' is effective and enjoyable is the most important key to the entire cracking process. The first region is not contaminated. Referring to FIG. 1 , in a conventional embodiment, the wafer carrier U has: a top surface = a transformer package structure 10, and an image sensing wafer 12 is disposed on the crystal H and the lower surface 11b. 11a, the upper surface 12a of the image sensing wafer 12 carrier U includes a plurality of pads 12b and a central/moving surface 12a. The active surface 12b is electrically connected to the plurality of bonding wires 13 In the calendering region 12c, the solder pads 14 are formed on the image sensing wafer 12, the aa sheet carrier 11, a resin region &; above the resin 14, the central photosensitive resin 14 is supported by the active surface 12a. The light-transmissive sheet 15, the cymbal, sighs a light-transmissive sheet 15, which is formed with a sealant 16, and the sealant 丨曰: the upper surface lla of the sheet is affixed to the image-sensing wafer 1248665. Description (2) 1 2, the welding wire 13 and the resin 4, and surrounding the fixed light-transmissive sheet 1 "on the resin 14, the sealant 16 is a little glue, a plurality of Qing = 1 7 is disposed on the lower surface 丨 1 b of the wafer carrier 。, wherein, the resin 14 does not have sufficient strength to seal the image sensing crystal The film 丨 2 央 central photosensitive zone 1 2 c, so in the process of sealing, the sealant 16 can only use the point coating gel, if transfer molding is used (trans jf e Γ ιη 0 | d丨n ^ > To form a molding compound, the molding compound is infiltrated by the gap between the resin 4 and the transparent sheet 15 , resulting in contamination of the photosensitive region 12 2c. The main purpose of the present invention is to provide an image sensor package. An active surface of an image sensing chip includes a central photosensitive area and a peripheral area, and a soft adhesive system covers the periphery. The region is adhered and fixed to the second light sheet to form a dam structure, so that a gas-tight sealing space is formed between the light-transmitting sheet and the middle-photosensitive region to prevent a molding compound from infiltrating. Contaminating the central photosensitive region. The second object of the present invention is to provide a method for manufacturing an image sensor sealing tape. An active surface of an image sensing wafer includes two central photosensitive regions and a peripheral region. a mold sealant Firstly, a soft colloid is provided in the peripheral region and a plurality of bonding wires are sealed. The flexible adhesive system adheres a transparent sheet to the image sensing wafer, so that the transparent sheet and the image sensing wafer are ahai. Forming a gas-tight space between the central photosensitive regions, the soft gel system becomes a buffer for the light-transmissive sheet, so as to prevent the light-transmissive sheet from being attached to one of the mold holes when forming a mold sealant Surface, and

第8頁 1248665 五、發明說明（3) 於該模穴壓合時發生該透光片損壞之情況。Page 8 1248665 V. Description of the invention (3) The damage of the transparent sheet occurs when the cavity is pressed.

、依本發明之影像感測器封裝構造，其係主要包含一晶 片載體、一影像感測晶片、複數個銲線、一軟性膠體、一 透光片及一模封膠體，該晶片載體係具有一上表面，該影 像感測晶片係設置於該晶片載體之該上表面，該影像感測 晶片係具有一主動面，該主動面係包含有一中央感光區以 及一周邊區，該影像感測晶片之複數個銲墊係形成於該周 邊區，該些銲墊係以該些銲線電性連接至該晶片載體，該 軟性膠體係覆蓋至該影像感測晶片之該周邊區與該些銲 線’該透光片係設置於該軟性膠體上，該軟性膠體係黏著 固定該透光片，並使該透光片與該影像感測晶片之該中央 感光區之間形成一氣閉密封空間，該模封膠體係形成於該 晶片載體之該上表面，該模封膠體係包覆該軟性膠體並顯 i备出該透光片之一表面。 【實施方式】 參閱所附圖式，本發明將列舉以下之實施例說明。 依本發明之第一具體實施例，請參閱第2圖，一種影 像感測器封裝構造1 00係包含一晶片載體11 0、一影像感測 晶片120、複數個銲線130、一軟性膠體14〇、一透光片15〇 及一模封膠體160，該晶片載體110係具有一上表面U1及 一下表面11 2。其中該晶片載體1 1 0係可為一電路基板、一 陶瓷基板或一導線架，於本實施例中，該晶片栽體11 〇俜 為陶曼基板’該晶片載體11 0係另包含複數個外導接山 11 3 ’該些外導接端i丨3係位於該晶片載體丨丨〇 端 卜表面 1248665 ----~-- 五、發明說明（4) 112 〇 該影像感測晶片1 20係設置於該晶片載體1 1 〇之該上表 面1 11 ’該影像感測晶片1 2 〇係具有一主動面1 2 1並包含複 數個銲墊122，該主動面121係包含有一中央感光區123以 及一周邊區1 24，該些銲墊1 22係形成於該周邊區]24。在 ^實施例中，該影像感測晶片丨2 〇係選自於一互補式金屬 氧化半導體（CMOS)晶片與一電荷耦合裝置（CCD)晶片之其 中- 〇 該些銲線1 3 0係電性連接該影像感測晶片1 2 0之該些銲 塾122至該晶片載體110。該軟性膠體14〇係覆蓋該影像感 4 測晶片120之該周邊區124並密封該些銲線130。於本實施 例中’該軟性膠體1 40係覆蓋該影像感測晶片丨2 〇之側面， 该軟性膠體1 4 0係可為一種點塗膠體（p〇 11丨ng compound) ’其係以液態點膠（iiqUid coating)之方式形 成，較佳的，該軟性膠體丨4〇係可為_熱固性黏膠，以黏 著該透光片1 5 0。 該透光片1 5 0係設置於該軟性膠體丨4 〇上，該軟性膠體 140係黏著固定該透光片15〇，以使得該透光片1 5〇與該影 像感測晶片1 20之該中央感光區丨23之間形成一氣閉密封空 間，以利後續之模封形成。該模封膠體16〇係形成於該晶 片載體110之該上表面1Π，該模封膠體16〇係包覆該軟性 膠體140並顯露出該透光片1 50之一表面1 51。 在該影像感測器封裝構造1 〇 〇中，該影像感測晶片丨2 〇 之該主動面121係包含有該中央感光區123以及該周邊區The image sensor package structure of the present invention mainly comprises a wafer carrier, an image sensing wafer, a plurality of bonding wires, a soft gel, a light transmissive sheet and a mold sealing body. An image sensing chip is disposed on the upper surface of the wafer carrier, the image sensing chip has an active surface, the active surface includes a central photosensitive region and a peripheral region, and the image sensing chip a plurality of pads are formed in the peripheral region, the pads are electrically connected to the wafer carrier by the bonding wires, and the soft adhesive system covers the peripheral region of the image sensing wafer and the bonding wires The transparent film is disposed on the soft gel, and the flexible adhesive system adhesively fixes the transparent sheet, and forms a gas-tight sealed space between the transparent sheet and the central photosensitive region of the image sensing wafer. The encapsulation system is formed on the upper surface of the wafer carrier, and the molding compound system coats the soft colloid and prepares a surface of the transparent sheet. [Embodiment] The present invention will be described by way of the following examples. According to the first embodiment of the present invention, referring to FIG. 2, an image sensor package structure 100 includes a wafer carrier 110, an image sensing wafer 120, a plurality of bonding wires 130, and a soft colloid 14. A light transmissive sheet 15 and a mold encapsulant 160 having an upper surface U1 and a lower surface 11 2 . The wafer carrier 110 can be a circuit substrate, a ceramic substrate or a lead frame. In the embodiment, the wafer carrier 11 is a Tauman substrate. The wafer carrier 11 0 further includes a plurality of The outer guiding joints 11 3 'the outer guiding ends i 丨 3 are located on the surface of the wafer carrier 12 卜 1248665 ----~-- 5, the invention description (4) 112 〇 the image sensing wafer 1 20 is disposed on the upper surface 1 11 ′ of the wafer carrier 1 1 ′. The image sensing wafer 1 2 has an active surface 1 2 1 and includes a plurality of pads 122 including a central photosensitive layer The region 123 and a peripheral region 1 24 are formed in the peripheral region 24 . In an embodiment, the image sensing chip 2 is selected from a complementary metal oxide semiconductor (CMOS) wafer and a charge coupled device (CCD) chip - the plurality of bonding wires are electrically The solder pads 122 of the image sensing wafer 120 are connected to the wafer carrier 110. The soft gel 14 covers the peripheral region 124 of the image sensing wafer 120 and seals the bonding wires 130. In the present embodiment, the soft colloid 134 covers the side of the image sensing wafer ,2 ,, and the soft colloid 1 40 can be a point coating colloid (p〇11丨ng compound) Preferably, the soft colloidal adhesive can be a thermosetting adhesive to adhere the transparent sheet 150. The transparent sheet 150 is disposed on the flexible colloid 丨4 ,, and the flexible colloid 140 is adhesively fixed to the transparent sheet 15 以 so that the transparent sheet 15 〇 and the image sensing wafer 1 20 A gas-tight sealing space is formed between the central photosensitive regions 23 to facilitate subsequent molding. The molding compound 16 is formed on the upper surface 1 of the wafer carrier 110, and the molding compound 16 is coated with the soft gel 140 to expose a surface 151 of the transparent sheet 150. In the image sensor package structure 1 , , the active surface 121 of the image sensing wafer 包含 2 包含 includes the central photosensitive region 123 and the peripheral region

第10頁 1248665__ 五、發明說明（5) 1 24，該軟性膠體1 40係覆蓋該周邊區1 24，並黏著固定該 透光片1 5 0 ’使a亥透光片1 5 0與該中央感光區]2 3之間形成 一氣閉密封空間，以避免在封膠過程中，發生該模封膠體 1 6 0滲入而污染該中央感光區1 2 3之情形。 第3 A圖至第3 D圖係為上述影像感測器封裝構造1 〇 〇之 製造方法，在第3 A圖步驟中，首先，提供一晶片載體 1 1 0 ’该晶片載體1 1 0係具有一上表面1 1 1，在本賞施例 中，該晶片載體1 1 0係包含有複數個外導接端i J 3在該晶片 載體1 1 0之一下表面1 1 2。再進行一黏晶步驟，其係設置一 影像感測晶片1 2 0於該晶片載體1 1 〇之該上表面]^ 1，該影 像感測晶片1 2 0係具有一主動面1 2 1並包含複數個銲墊 122，該主動面121係包含有一中央感光區123以及一周邊 區124，其中該些銲墊122係形成於該周邊區丨24。接著， 進行一打線步驟’其係形成複數個銲線1 3 0以電性連接該 影像感測晶片1 2 0之該些銲塾1 2 2至該晶片載體π ό。 在第3 Β圖步驟中，提供一軟性膠體1 4 〇於該影像感測 晶片1 2 0之該主動面1 2 1之該周邊區1 2 4並密封該些録線 1 30，在本實施例中，該些軟性膠體丨4〇係更覆蓋至該晶片 載體11 0之該上表面111，以覆蓋該影像感測晶片之複數個 側面。 在第3C圖步驟中，設置一透光片15〇於該軟性膠體14〇 上，接者，在第3 D圖步驟中，固化該軟性膠體1 4 〇，以使 該透光片1 5 0藉由該軟性膠體1 4 〇黏著固定，並使得該透光 片150與該影像感測晶片120之該中央感光區} 23形成一氣Page 10 1248665__ V. Description of the Invention (5) 1 24, the soft colloid 1 40 covers the peripheral area 1 24, and the fixed light-transmissive sheet 1 50 is adhered to make the a-light transparent sheet 150 and the center A gas-tight sealing space is formed between the photosensitive regions] 2 3 to avoid the case where the molding colloid 1 60 infiltrates and contaminates the central photosensitive region 1 2 3 during the sealing process. 3A to 3D are manufacturing methods of the image sensor package structure 1 described above. In the step 3A, first, a wafer carrier 1 1 0 'the wafer carrier 1 1 0 is provided. Having an upper surface 1 1 1 , in the present embodiment, the wafer carrier 110 includes a plurality of external guiding terminals i J 3 on a lower surface 1 1 2 of the wafer carrier 110. And performing a die bonding step of disposing an image sensing wafer 120 on the upper surface of the wafer carrier 1 1 , and the image sensing wafer 120 has an active surface 1 2 1 and A plurality of pads 122 are included. The active surface 121 includes a central photosensitive region 123 and a peripheral region 124. The pads 122 are formed on the peripheral region 24 . Then, a wire bonding step is performed to form a plurality of bonding wires 130 to electrically connect the pads 1 2 2 of the image sensing wafer 120 to the wafer carrier π ό. In the third step, a soft colloid 14 is provided on the peripheral region 1 2 of the active surface 1 2 1 of the image sensing wafer 120 and the recording lines 1 30 are sealed. In the example, the soft colloidal coatings cover the upper surface 111 of the wafer carrier 110 to cover a plurality of sides of the image sensing wafer. In the step of FIG. 3C, a light-transmissive sheet 15 is disposed on the soft gel 14〇, and in the step of FIG. 3D, the soft gel is cured to make the light-transmissive sheet 1 50. The flexible colloid 1 4 is adhesively fixed, and the transparent sheet 150 forms a gas with the central photosensitive region 23 of the image sensing wafer 120.

第11頁 1248665 五、發明說明（6) 閉密封空間。 最後，進行一封膠步驟，其係形成一模封膠體丨6〇於 該晶片載體1 1 〇之該上表面Π 1。請再參閱第2圖，該模^ 膠體1 6 0係包覆該軟性膠體14 ()並顯露出該透光片〗5 〇 一 表面1 5 1。在本實施例中，該模封膠體1 60係以—模穴^圖 未繪出）壓合之方式形成，以形成一影像感測器封: 1〇〇。 奵凌構造 依據本發明之影像感測器封裝構造之製造方法，今^ 像感測器封裝構造100在形成該模封膠體160前，係先=3 影像感測晶片1 2 0之該周邊區1 24形成該軟性膠體i 4 〇，7、以4 黏著固定該透光片1 50並形成該氣閉密封空間，較佳地\ 在設置該透光片1 5 0後另固化該軟性膠體1 4〇，以使^該軟性 膠體140成為該透光片15〇之緩衝體，在該模穴壓合=开^ 該模封膠體160時，緊貼於該模穴之一上表面（圖^緣出 之該透光片150係藉由該軟性膠體140之緩衝保護，= 於發生因該模穴之擠壓而造成透光片15〇損壞之 、 降低生產時之不良率。 月V 以 、依本發明之第二具體實施例，請參閱第4圖:，‘ 一種影 像感測器封裝構造2〇〇係包含一晶片載體2 1〇、一旦〜 日日片220、複數個銲線23〇、一軟性膠體24〇、一透光 及一模封膠體270。該晶片載體2 10係具有_上表面211， 該晶片載體2 1 0之該下表面2丨2係形成有複數個^導接端， 21 3。於本實施例中，該晶片載體2丨〇係可 4衫像感測晶片220係設置於該晶片载體21 〇之該上表 1248665 3L、發明說明（7) ™ 一-™ 面2 1 1 σ亥衫像感測晶片2 2 0係具有一主動面2 2丨並包含禕 數個銲墊222，該主動面221係包含有一中央感光區223 = 及一周邊區224，其中該些銲墊2 22係形成於該周邊區 224，該些銲線2 30係電性連接該影像感測晶片2 2〇之該此 在干墊2 2 2至忒晶片載體2 1 〇之該上表面2 11。在該影像感測 晶片22 0之該周邊區224係可形成一間隔物25〇(spacer)， 且其係位在該些銲墊222之内圍，其係用以保持該影像感 測曰曰片2 2 0與該透光片2 6 0之間隔，並防止該軟性膠體2 4 〇 流入該中央感光區123。該軟性膠體240係覆蓋該影像感測 晶片2 2 0之該周邊區2 2 4並密封該些銲線2 3 〇，在本實施例 中，該軟性膠體240係覆蓋該影像感測晶片22〇之複數個侧 面。 該透光片260係設置於該軟性膠體240上，該軟性膠體 240係黏著固定該透光片260並與該影像感測晶片22〇之該 中央感光區2 2 3之間係形成一氣閉密封空間。在本實施例 中，該透光片260之尺寸係略等同或略小於該晶片載體21〇 之尺寸。該模封膠體270係形成於該晶片載體2丨〇之該上表 面211，該模封膠體270係包覆該軟性膠體240並顯露出該 透光片260之一表面261。複數個銲球280係設置於該晶片 載體2 1 0之該些外導接端2 1 3，以對外電性連接。 上述該影像感測器封裝構造2〇〇之該透光片260係黏著 固定於該軟性膠體240，因為該軟性膠體240係為一點塗膠 體，故在設置該透光片260時，易造成該透光片260之設置 不水平’然而，在形成該模封膠體27〇時，該軟性膠體24〇Page 11 1248665 V. INSTRUCTIONS (6) Closed sealed space. Finally, a glue step is performed which forms a mold sealant 6 on the upper surface Π 1 of the wafer carrier 1 1 . Referring to FIG. 2 again, the mold colloid 1 60 is coated with the soft colloid 14 () and reveals the transparent sheet 55 〇 a surface 151. In the present embodiment, the molding compound 1 60 is formed by pressing together to form an image sensor seal: 1 〇〇. According to the manufacturing method of the image sensor package structure of the present invention, the image sensor package structure 100 is used to detect the peripheral region of the wafer 1 2 0 before forming the mold seal 160. 1 24 forming the soft colloid i 4 〇, 7, fixing the transparent sheet 150 by 4 and forming the gas-tight sealed space, preferably, the soft colloid 1 is further cured after the transparent sheet 150 is disposed 4〇, so that the soft gel 140 becomes the buffer of the light-transmissive sheet 15〇, and when the cavity is pressed to open the mold-molding body 160, it is closely attached to the upper surface of the mold cavity (Fig. The light-transmissive sheet 150 is protected by the cushioning of the soft gel 140, and the light-transmitting sheet 15 is damaged due to the extrusion of the cavity, thereby reducing the defective rate during production. According to a second embodiment of the present invention, please refer to FIG. 4: 'An image sensor package structure 2 includes a wafer carrier 2 1 〇, once - a Japanese wafer 220, a plurality of bonding wires 23 〇 a soft colloid 24 〇, a light transmissive and a mold encapsulant 270. The wafer carrier 2 10 has an upper surface 211, the wafer carrying The lower surface 2丨2 of the 2 1 0 is formed with a plurality of conductive terminals, 21 3 . In the embodiment, the wafer carrier 2 can be mounted on the wafer. The body 21 is shown in the above table 1248665 3L, the invention description (7) TM--TM surface 2 1 1 σ 衣 image sensing wafer 2 2 0 has an active surface 2 2 丨 and includes a plurality of pads 222, The active surface 221 includes a central photosensitive region 223 = and a peripheral region 224 , wherein the solder pads 22 are formed in the peripheral region 224 , and the bonding wires 2 30 are electrically connected to the image sensing wafer 2 2 The inner surface 2 11 of the dry pad 2 2 2 to the wafer carrier 2 1 . The peripheral region 224 of the image sensing wafer 22 0 can form a spacer 25 spacer, and The inner circumference of the soldering pads 222 is used to maintain the distance between the image sensing cymbal 205 and the transparent 260, and prevent the soft colloid 2 〇 from flowing into the central sensitization. The soft colloid 240 covers the peripheral region 2 2 4 of the image sensing wafer 220 and seals the bonding wires 2 3 〇. In the embodiment, the soft colloid 240 is The plurality of sides of the image sensing chip 22 are covered. The transparent sheet 260 is disposed on the soft gel 240, and the flexible colloid 240 is adhered to the transparent sheet 260 and the image sensing wafer 22 is disposed. A gas-tight sealed space is formed between the central photosensitive regions 2 2 3 . In the present embodiment, the size of the transparent sheet 260 is slightly equal or slightly smaller than the size of the wafer carrier 21 . The molding compound 270 is formed in The upper surface 211 of the wafer carrier 2 is coated with the soft gel 240 and exposes a surface 261 of the transparent sheet 260. A plurality of solder balls 280 are disposed on the outer conductive terminals 2 1 3 of the wafer carrier 210 for external electrical connection. The light-transmissive sheet 260 of the image sensor package structure is adhesively fixed to the soft gel 240. Since the soft gel 240 is a one-coat gel, it is easy to cause when the transparent sheet 260 is disposed. The arrangement of the light-transmissive sheet 260 is not horizontal. However, when the mold-molding body 27 is formed, the soft gel body 24〇

1248665_____________ 五、發明說明（8) , 係受到模封工具之模穴修正，可水平修正調整該透光片 260之水平面，並且，該軟性膠體24 0亦可用於保護該些銲 線2 3 0，以避免在形成該模封膠體2 7 0之過程中發生沖線之 情況，進而提昇產品之妥善度。 本發明之保護範圍當視後附之申請專利範圍所界定者 為準，任何熟知此項技藝者，在不脫離本發明之精神和範 圍内所作之任何變化與修改，均屬於本發明之保護範圍。1248665_____________ 5. The invention description (8) is corrected by the cavity of the molding tool, and the horizontal plane of the transparent sheet 260 can be horizontally corrected, and the soft colloid 24 0 can also be used to protect the bonding wires 2 3 0, In order to avoid the occurrence of the punching in the process of forming the molding compound 210, the product is improved. The scope of the present invention is defined by the scope of the appended claims, and any changes and modifications made by those skilled in the art without departing from the spirit and scope of the invention are within the scope of the present invention. .

第14頁 1248665 圖式簡單說明 【圖 式 簡 單 說 明 1 第 1 圖 二 習知影像感測 器封裝 構造 之 截 面 示 意 圖； 第 2 圖 ·· 依據? 私發明之 第- -具 體實 施 例 ， -^ 種 影 像感 測 器 封 裝 構 造 之截〗 S示意圖 y 第3A 圖 至 第3D 圖 二 依據本發明之 第- -具 體實 施 例 j — 晶 片 載體 與 一 影 像 感 測 晶片在邊影像 感測器 封裝 構 造 之 製 造 方 法中 之 截 面 示 意 圖 ;及 第 4 圖 • 依據- 私發明之 第二 二具 體實 施 例 -^ 種 影 像感 測 器 封 裝 構 造 之截1 &示意圖 〇 元件 符 號 簡 單 說 明 • 10 影 像感 測 器 封 裝構造 11 晶 片 載 體 11a 上表面 lib 下 表 面 12 影 像 感 測 晶 片 12a 主動面 12b 銲 墊 12c 中 央 感 光 區 13 鍀· 線 14 樹脂 15 透 光 片 16 封 膠 體 17 鲜球 100 影 像感 測 器 封 裝構造 110 晶 片 載 體 111 上表面 112 下 表 面 113 外 導 接 端 120 影 像感 測 晶 片 121 主動面 122 銲 塾 123 中 央 感 光 區 124 周邊區 1 3 0 銲線Page 14 1248665 Brief description of the drawing [Simple description of the drawing 1 Figure 1 is a schematic cross-sectional view of the conventional image sensor package structure; 2nd drawing · According to the private invention - Specific embodiment, -^ FIG. 3A to 3D FIG. 2 is a second embodiment of the present invention. - a specific embodiment j - a wafer carrier and an image sensing wafer are fabricated in a side image sensor package structure. Schematic diagram of the cross section of the method; and Fig. 4: According to the second embodiment of the invention - a section of the image sensor package structure 1 & schematic diagram 〇 a simple description of the component symbol • 10 image sensor package construction 11 wafer carrier 11a upper surface lib lower surface 12 image sensing wafer 12a active surface 12b solder pad 12c central photosensitive region 13 鍀 · line 14 resin 15 transparent sheet 16 sealing Body 17 Fresh Ball 100 Image Sensor Mounting Structure 110 Crystal Chip Carrier 111 Upper Surface 112 Lower Surface 113 External Guide End 120 Image Sensing Chip 121 Active Surface 122 Soldering 中 123 Central Sensing Area 124 Peripheral Area 1 3 0 Wire Bonding

第15頁 1248665 圖式簡單說明 140 軟 性 膠 體 150 透 光 片 151 表 面 160 模 封 膠 體 20 0 影 像 感 測 哭 xr\r 封 裝構」 造 210 晶 片 載 體 211 上 表 面 213 外 導 接 端 220 影 像感 測 曰 曰a 片 221 主 動 面 223 中 央 感 光 區 224 周 邊 區 230 銲 線 240 軟 性 膠 體 250 間 隔 物 260 透 光 片 261 表 面 270 模 封 膠 體 280 銲 球 2 1 2 下表面 2 2 2 銲墊 <»Page 15 1248665 Brief description of the diagram 140 Soft colloid 150 Translucent sheet 151 Surface 160 Molding paste 20 0 Image sensing crying xr\r Package structure 210 Wafer carrier 211 Upper surface 213 External guiding end 220 Image sensing 曰曰a sheet 221 active surface 223 central photosensitive area 224 peripheral area 230 bonding wire 240 soft colloid 250 spacer 260 transparent sheet 261 surface 270 molding compound 280 solder ball 2 1 2 lower surface 2 2 2 solder pad <»

第16頁Page 16

Claims (1)

1248665 六、申請專利範圍 一1觀 一&quot; 【申請專利範圍】 1 ' 一種影像感測器封裝構造，包含： 一晶片載體，其係具有一上表面； 一影像感測晶片，其係設置於該晶片載體之該上表 面’該影像感測晶片係具有一主動面，其係包含有一中央 感光區以及一周邊區，該影像感測晶片之複數個銲塾係形 成於該周邊區； 複數個銲線，其係電性連接該影像感測晶片之該些銲 墊至該晶片載體； 一軟性膠體，其係覆蓋至該影像感測晶片之該周邊區j 並密封該些銲線； 一透光片，其係設置於該軟性膠體上，該軟性膠體係 黏著固定該透光片並使該透光片與該影像感測晶片之該中 央感光區之間形成一氣閉密封空間；及 一模封膠體（molding compound)，其係形成於該晶片 載體之該上表面，該模封膠體係包覆該軟性膠體並顯露出 该透光片之^一表面。 2、如申請專利範圍第丨項所述之影像感測器封裝構造 其中A軟性膠體係為一熱固性黏膠，以黏著該透光片。 ^ 士如申明^利範圍第1項所述之影像感測器封裝構造 二中該ί性Ϊ體係為一種點塗膠體(potting _P〇und) 圍第1項所述之影像感測器封裝構造 Τ 二=片係選自於一互補式金屬氧化半導體 (CMOS)曰曰片” 一電荷耦合裝置（ccd)晶片之其中之一。 T248665 、 申請專利範圍 5、 如申請專 其中該晶片載 架。 6、 如申請專 其中該晶片載 利範圍第1 體係可為/ 利範圍第5 體係包含有 片載體之一下表面。 利範圍第6 數個銲球， 種影像感測器封裝 片載體，該 7、如申請專 其另包含有複 提供一晶 設置一影像感測晶片 像感測晶片係具有一主動 及 '一周邊區 邊區， 該影像感測 。員所述之影像感測器封裝構诰， 電路基板、一陶瓷基板或一導線 峭所述之影像感測器封裝構造， 複數個外導接端，其係位於該晶 項所述之影像感測器封裝構造， 其係設置於該些外導接端。 構造之製造方法，包含： 晶片載體係具有一上表面； 於該晶片載體之該上表面，該影 面，其係包含有一中央感光區以 晶片之複數個銲墊係形成於該周 形成複數個銲線，該些銲線係電性連接該影像感測晶 片之該些銲墊至該晶片載體； 提供一軟性膠體，該軟性膠體係覆蓋該影像感測晶片 之該周邊區並密封該些銲線； 設置一透光片於該軟性膠體上，該軟性膠體係黏著固 定該透光片並使該透光片與該影像感測晶片之該中央感光 區之間形成一氣閉密封空間；及 形成模封膠體（molding compound)於該晶片載體之 該上表面，該模封膠體係包覆該軟性膠體並顯露出該透光 片之一表面。1248665 VI. Patent Application Scope 1 &quot; [Application Scope] 1 ' An image sensor package structure comprising: a wafer carrier having an upper surface; an image sensing wafer disposed on The image sensing chip of the wafer carrier has an active surface including a central photosensitive region and a peripheral region, and a plurality of soldering systems of the image sensing wafer are formed in the peripheral region; a wire that electrically connects the pads of the image sensing wafer to the wafer carrier; a soft gel covering the peripheral region j of the image sensing wafer and sealing the bonding wires; a film disposed on the soft gel, the flexible adhesive system adhesively fixing the light-transmissive sheet and forming a gas-tight sealed space between the light-transmitting sheet and the central photosensitive region of the image sensing wafer; and a mold seal A molding compound is formed on the upper surface of the wafer carrier, and the molding compound coats the soft gel and exposes a surface of the light-transmissive sheet. 2. The image sensor package structure as described in claim </ RTI> wherein the A soft gel system is a thermosetting adhesive to adhere the light transmissive sheet. ^ The image sensor package structure of the first embodiment of the image sensor package structure described in Item 1 is a dot-coated gel (potting _P〇und). Τ 2 = the film is selected from a complementary metal oxide semiconductor (CMOS) wafer "one of a charge coupled device (ccd) wafer. T248665, claim 5, if the application is specifically for the wafer carrier. 6. If the application is specific, the wafer carrier range can be the first system. The fifth system includes one of the lower surfaces of the chip carrier. The sixth range of solder balls, the image sensor package carrier, the 7 The image sensing chip has a active and a peripheral region, the image sensing device, the image sensor package structure, the circuit, and the image sensing chip. a substrate, a ceramic substrate or a wire slanting image sensor package structure, a plurality of external guiding ends, which are disposed in the image sensor package structure of the crystallographic item, and are disposed on the outer guiding Connection The manufacturing method comprises: a wafer carrier having an upper surface; and the upper surface of the wafer carrier, the shadow surface comprising a central photosensitive region formed by a plurality of pads of the wafer formed on the periphery to form a plurality of solders a bonding wire electrically connecting the pads of the image sensing chip to the wafer carrier; providing a soft gel covering the peripheral region of the image sensing chip and sealing the bonding wires Providing a light-transmissive sheet on the soft gel, the flexible adhesive system adhesively fixing the light-transmissive sheet and forming a gas-tight sealing space between the light-transmitting sheet and the central photosensitive region of the image sensing wafer; A molding compound is applied to the upper surface of the wafer carrier, and the molding compound coats the soft gel and exposes a surface of the light-transmissive sheet. 1248665 六、 申請專利範圍 9、如申請專利範圍 製造方法，其另包含 固化該軟性膠體，以 1 0、如申請專利範圍 製造方法，其中該軟 態點膠（1 i q u i d c o a t 1 1、如申請專利範圍 製造方法，其中該影 化半導體（CMOS)晶片 - 〇 1 2、如申請專利範圍 製造方法，其中該晶 板或一導線架。 1 3、如申請專利範圍 之製造方法，其中該 其係位於該晶片載體 14、如申請專利範圍 之製造方法，其另包 端° 第8項所述之影像感測器封裝構造之 ••在形成該模封膠體之步驟之前，熱 黏著該透光片。 第8項所述之影像感測器封裝構造之 性膠體係為一種點塗膠體，其係以液 ing )之方式形成。 第8項所述之影像感測器封裝構造之 像感測晶片係選自於一互補式金屬氧 與一電荷耦合裝置（CCD)晶片之其中 第8項所述之影像感測器封裝構造之 片載體係可為一電路基板、一陶瓷基 ^12項所述之影像感測器封裝構造 晶片載體係包含有複數個外導接端， 之一下表面。 =3工員戶斤述之影像感測器封 含有：設置複數個銲球於該些外導换1248665 VI. Patent application scope 9. For the manufacturing method of the patent application scope, the method further comprises curing the soft colloid to 10, as in the patent application scope manufacturing method, wherein the soft dispensing (1 iquidcoat 1 1 , such as the patent application scope a manufacturing method, wherein the image forming semiconductor (CMOS) wafer - 〇 1 2, as in the patent application scope manufacturing method, wherein the crystal plate or a lead frame is used. The manufacturing method according to the patent application, wherein the system is located The wafer carrier 14 is manufactured by the method of the patent application, and the image sensor package structure of the item 8 is thermally bonded to the light-transmissive sheet before the step of forming the mold-molding body. The adhesive gel system of the image sensor package structure described in the eighth aspect is a point coating gel which is formed by liquid ing). The image sensing chip of the image sensor package structure according to Item 8 is selected from the image sensor package structure of the eighth aspect of a complementary metal oxygen and a charge coupled device (CCD) chip. The chip carrier can be a circuit substrate, and the image sensor package structure of the ceramic substrate 12 includes a plurality of outer guiding ends and a lower surface. =3 The image sensor seal of the employee's account contains: set a plurality of solder balls for the external guide 第19頁Page 19
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