JPH10144898A - Solid state image pickup apparatus - Google Patents

Solid state image pickup apparatus

Info

Publication number
JPH10144898A
JPH10144898A JP8304362A JP30436296A JPH10144898A JP H10144898 A JPH10144898 A JP H10144898A JP 8304362 A JP8304362 A JP 8304362A JP 30436296 A JP30436296 A JP 30436296A JP H10144898 A JPH10144898 A JP H10144898A
Authority
JP
Japan
Prior art keywords
base substrate
solid
imaging device
state imaging
resin frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8304362A
Other languages
Japanese (ja)
Inventor
Keiji Sasano
啓二 笹野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP8304362A priority Critical patent/JPH10144898A/en
Publication of JPH10144898A publication Critical patent/JPH10144898A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To realize low cost hollow package structure by joining a base substrate, a solid state image pickup element and a resin frame at the upper end portion of a resin frame under the condition that the predetermined space is secured between the element mounting surfaces of a base substrate and then hermetically sealing a solid state image pickup element on the base substrate in the predetermined space. SOLUTION: A base substrate 2 integrally forming a conductive film 7 is formed on a substrate, and a solid state image pickup element 3 is joined to be fixed on the base substrate 2. The electrode of a solid state image pickup element and one end 7a of the conductive film 7 are connected with a bonding wire 8 and resin having high viscosity is applied surrounding the solid state image pickup element 3 on the base substrate 2 to form the resin frame 4 in the predetermined height on the base substrate 2. A transparent plate 5 is pressed on the upper end of the resin frame 4 to harden the resin frame 4. Simultaneously, height of the resin frame 4 is adjusted to the final height. Thereby, material cost and processing cost of the base substrate 2 can be lowered as mush as possible.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、CCDリニアセン
アやCCDエリアセンサなどの固体撮像装置に関するも
のである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state imaging device such as a CCD linear sensor or a CCD area sensor.

【0002】[0002]

【従来の技術】図3はこの種の固体撮像装置のパッケー
ジ構造を示す断面図であり、図4はその分解斜視図であ
る。図示した固体撮像装置30においては、ベースとな
るセラミック基板31上に固体撮像素子32が搭載され
ている。セラミック基板31は3層又はそれ以上の多層
構造をなすもので、その層間に所定本数の導電膜33a
がパターン形成されている。各々の導電膜33aの一端
はセラミック基板31上の固体撮像素子32の周辺部に
近接配置され、そこに固体撮像素子32の電極部(アル
ミニウムパッド部)から引き出されたボンディングワイ
ヤ34(図3参照)が接続されている。一方、各々の導
電膜33aの他端はセラミック基板31の外側面に露出
しており、その露出部分に側面導電膜33bが形成され
ている。そして、各々の側面導電膜33bにリード端子
35がセラミック基板31の裏側に垂直に延びるように
ろう付けされている。さらに、セラミック基板31の上
端部にはシールガラス36が接合され、このシールガラ
ス36によって固体撮像素子32が気密封止されてい
る。
2. Description of the Related Art FIG. 3 is a sectional view showing a package structure of a solid-state image pickup device of this type, and FIG. 4 is an exploded perspective view thereof. In the illustrated solid-state imaging device 30, a solid-state imaging device 32 is mounted on a ceramic substrate 31 serving as a base. The ceramic substrate 31 has a multilayer structure of three or more layers, and a predetermined number of conductive films 33a are provided between the layers.
Are patterned. One end of each conductive film 33a is arranged close to the peripheral portion of the solid-state imaging device 32 on the ceramic substrate 31, and a bonding wire 34 drawn out from an electrode portion (aluminum pad portion) of the solid-state imaging device 32 (see FIG. 3). ) Is connected. On the other hand, the other end of each conductive film 33a is exposed on the outer surface of the ceramic substrate 31, and a side conductive film 33b is formed on the exposed portion. A lead terminal 35 is brazed to each side conductive film 33b so as to extend vertically to the back side of the ceramic substrate 31. Further, a seal glass 36 is joined to the upper end of the ceramic substrate 31, and the solid-state imaging device 32 is hermetically sealed by the seal glass 36.

【0003】[0003]

【発明が解決しようとする課題】しかしながら上記従来
の固体撮像装置30においては、多層構造のセラミック
基板31を採用して基板内側を階段状に形成し、その凹
部底面に固体撮像素子32を実装して気密封止用の空間
(中空部)を確保しているため、基板相互の貼り合わせ
によって基板製造工程が煩雑になり、セラミック基板3
1の材料費や加工費が高くなるという問題があった。
However, in the above-mentioned conventional solid-state imaging device 30, a ceramic substrate 31 having a multilayer structure is adopted, the inside of the substrate is formed in a step shape, and the solid-state imaging device 32 is mounted on the bottom surface of the concave portion. Since a space (hollow portion) for hermetic sealing is secured, the substrate manufacturing process becomes complicated due to the mutual bonding of the substrates, and the ceramic substrate 3
(1) There is a problem that material costs and processing costs are increased.

【0004】そこで近年においては、平板構造をなすベ
ース基板上に固体撮像素子を実装し、これを光透過性の
樹脂にてポッティング封止したパッケージ構造も提案さ
れているが、このような構造では固体撮像素子の受光面
が直に樹脂で覆われることから以下のような不具合が生
じていた。 (1)固体撮像素子上に形成されているオンチップマイ
クロレンズの効果が得られなくなる。 (2)ベース基板の表面に付着している微小なゴミが樹
脂の内部に取り込まれ、このゴミが樹脂の流動性によっ
て素子受光面の上に移動し、特性不良を招く。 (3)樹脂中に気泡が発生しやすく、この気泡の混在に
よって画像歪み等の特性不良を招く。 (4)樹脂表面に付着したゴミを綿棒等でクリーニング
した際、樹脂表面にキズがつきやすく、これに起因して
画質不良を招く。
In recent years, there has been proposed a package structure in which a solid-state imaging device is mounted on a base substrate having a flat plate structure, and the solid-state imaging device is potted and sealed with a light-transmitting resin. Since the light receiving surface of the solid-state imaging device is directly covered with the resin, the following problems have occurred. (1) The effect of the on-chip microlens formed on the solid-state imaging device cannot be obtained. (2) Fine dust adhering to the surface of the base substrate is taken into the resin, and the dust moves on the light receiving surface of the element due to the fluidity of the resin, resulting in poor characteristics. (3) Bubbles are easily generated in the resin, and the presence of such bubbles causes poor characteristics such as image distortion. (4) When dust adhering to the resin surface is cleaned with a cotton swab or the like, the resin surface is easily scratched, resulting in poor image quality.

【0005】本発明は、上記課題を解決するためになさ
れたもので、その目的は、非常に安価な中空パッケージ
構造を実現した固体撮像装置を提供することにある。
SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a solid-state imaging device which realizes a very inexpensive hollow package structure.

【0006】[0006]

【課題を解決するための手段】本発明に係る固体撮像装
置は、平板構造をなすベース基板と、このベース基板上
に実装された固体撮像素子と、この固体撮像素子を囲む
状態でベース基板上に所定の高さで形成された樹脂枠
と、ベース基板の素子実装面との間に所定の空間を確保
した状態で樹脂枠の上端部に接合され、ベース基板上の
固体撮像素子を所定の空間内に気密封止してなる透明板
とから成る。
A solid-state imaging device according to the present invention comprises a base substrate having a flat plate structure, a solid-state imaging device mounted on the base substrate, and a solid-state imaging device mounted on the base substrate so as to surround the solid-state imaging device. The resin frame formed at a predetermined height and the upper surface of the resin frame in a state where a predetermined space is secured between the element mounting surface of the base substrate and the solid-state imaging device on the base substrate is fixed to a predetermined position. And a transparent plate hermetically sealed in the space.

【0007】上記構成からなる固体撮像装置において
は、平板構造をなすベース基板を採用し、このベース基
板上に固体撮像素子を実装するとともに、その固体撮像
素子を囲む樹脂枠の上端部に透明板を接合し、この透明
板で固体撮像素子を気密封止した構造となっているた
め、従来の中空パッケージ構造に比較して基板製造工程
が大幅に簡略化される。また、固体撮像素子を所定の空
間内(中空部)に気密封止しているため、ポッティング
封止構造を採用した場合の不具合も生じない。
In the solid-state imaging device having the above-described structure, a base substrate having a flat plate structure is employed, a solid-state imaging device is mounted on the base substrate, and a transparent plate is provided on an upper end of a resin frame surrounding the solid-state imaging device. , And the solid-state imaging device is hermetically sealed with the transparent plate, so that the substrate manufacturing process is greatly simplified as compared with the conventional hollow package structure. Further, since the solid-state imaging device is hermetically sealed in a predetermined space (hollow portion), no trouble occurs when the potting sealing structure is adopted.

【0008】[0008]

【発明の実施の形態】以下、本発明の実施の形態につい
て図面を参照しつつ詳細に説明する。図1は本発明に係
る固体撮像装置の一実施形態を示す分解斜視図であり、
図2はその断面図である。図示した固体撮像装置1は、
主として、ベース基板2、固体撮像素子3、樹脂枠4及
び透明板5から構成されている。
Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is an exploded perspective view showing an embodiment of a solid-state imaging device according to the present invention,
FIG. 2 is a sectional view thereof. The illustrated solid-state imaging device 1 includes:
It is mainly composed of a base substrate 2, a solid-state imaging device 3, a resin frame 4, and a transparent plate 5.

【0009】ベース基板2は、構造的にきわめて単純な
平板構造をなすもので、材料的には発塵の少ないセラミ
ック基板を採用している。ベース基板2の両側には、平
面視半円状の凹部6,6,・・・が所定の間隔で一体形
成されている。またベース基板2上には、上述した各々
の凹部3面を経由して断面略コ字形の導電膜7がパター
ン形成されている。この導電膜7は、例えばAg,Au
系の貴金属ペーストやCu,Ni系の卑金属ペーストと
いった、いわゆる厚膜導体材料から成るもので、その一
端部7aは固体撮像素子3の周辺部に近接配置されてい
る。一方、導電膜7の他端部7bは、ベース基板2の素
子実装面と反対側の面(図中下面)に延出し、その延出
部分を基板表面に露出させて外部接続用の電極部として
いる。
The base substrate 2 has a very simple flat plate structure, and is made of a ceramic substrate which generates little dust. On the opposite sides of the base substrate 2, semicircular concave portions 6, 6,... Are integrally formed at predetermined intervals. Further, a conductive film 7 having a substantially U-shaped cross section is formed on the base substrate 2 via the respective concave portions 3 described above. The conductive film 7 is made of, for example, Ag or Au.
One end portion 7a is arranged close to the peripheral portion of the solid-state imaging device 3, which is made of a so-called thick film conductor material such as a base noble metal paste or a Cu or Ni base metal paste. On the other hand, the other end portion 7b of the conductive film 7 extends to a surface (lower surface in the figure) opposite to the device mounting surface of the base substrate 2, and the extended portion is exposed to the substrate surface to form an electrode portion for external connection. And

【0010】固体撮像素子3は、CCD素子等からなる
もので、ベース基板2の上面中央部に実装されている。
固体撮像素子3の上面周縁部には複数の電極部(不図
示)が形成されており、これらの電極部から引き出され
た金線等のボンディングワイヤ8(図2参照)が導電膜
7の一端部7aに接続されている。
The solid-state imaging device 3 is composed of a CCD device or the like, and is mounted at the center of the upper surface of the base substrate 2.
A plurality of electrode portions (not shown) are formed on a peripheral portion of the upper surface of the solid-state imaging device 3, and a bonding wire 8 (see FIG. 2) such as a gold wire drawn from these electrode portions is connected to one end of the conductive film 7. It is connected to the unit 7a.

【0011】樹脂枠4は、ベース基板2上の固体撮像素
子3を取り囲むように形成されている。さらに詳述する
と、樹脂枠4は、導電膜7の一端部7aとボンディング
ワイヤ8との接続部分よりも外側でかつ導電膜7の一部
を覆うようにベース基板2上に形成されている。また樹
脂枠4の高さ寸法は、固体撮像素子3の厚み寸法にボン
ディングワイヤ8のループ高さを加えた寸法よりも大き
く設定されている。
The resin frame 4 is formed so as to surround the solid-state imaging device 3 on the base substrate 2. More specifically, the resin frame 4 is formed on the base substrate 2 so as to be outside the connection between the one end 7 a of the conductive film 7 and the bonding wire 8 and to cover a part of the conductive film 7. The height of the resin frame 4 is set to be larger than the sum of the thickness of the solid-state imaging device 3 and the loop height of the bonding wires 8.

【0012】樹脂枠4の材料としては、ベース基板2及
び透明板5との接着性が良好でかつ熱硬化性又は紫外線
硬化性を有する樹脂、例えばシリコーン系樹脂、エポキ
シ系樹脂、アクリル系樹脂などを採用することができ
る。また、装置製造上の都合からいえば、その隆起形状
を保持するために高粘度で高チクソ性を有する樹脂が好
ましい。さらに、熱応力の緩和という点では適度な弾性
を有するシリコーン系樹脂等が好ましく、耐湿性という
点ではエポキシ系樹脂,アクリル樹脂系等が好ましい。
As a material of the resin frame 4, a resin having good adhesiveness to the base substrate 2 and the transparent plate 5 and having thermosetting or ultraviolet curable properties, for example, silicone resin, epoxy resin, acrylic resin, etc. Can be adopted. In addition, from the viewpoint of manufacturing the device, a resin having high viscosity and high thixotropy is preferable in order to maintain the raised shape. Further, a silicone resin or the like having appropriate elasticity is preferable in terms of relaxation of thermal stress, and an epoxy resin or an acrylic resin is preferable in terms of moisture resistance.

【0013】透明板5は、ベース基板2の素子実装面と
の間に所定の空間、この場合は固体撮像素子3から引き
出されたボンディングワイヤ8と位置的に干渉しない程
度の空間を確保した状態で、樹脂枠4の上端部に接合さ
れている。この透明板5は、周知の中空パッケージ構造
に採用されているシールガラスと同様のもので、この透
明板5にて樹脂枠4の開口部を塞ぐことにより、上述し
た所定の空間内に固体撮像素子3が気密封止されてい
る。
The transparent plate 5 secures a predetermined space between the transparent board 5 and the device mounting surface of the base substrate 2, in this case, a space that does not interfere with the bonding wires 8 drawn from the solid-state image sensor 3. At the upper end of the resin frame 4. The transparent plate 5 is similar to a seal glass used in a well-known hollow package structure. By closing the opening of the resin frame 4 with the transparent plate 5, the solid-state imaging is performed in the above-described predetermined space. The element 3 is hermetically sealed.

【0014】ここで本実施形態の固体撮像装置1を製造
する際の手順を簡単に説明する。先ず、基板上に導電膜
7を一体形成してなるベース基板7を作製し、このベー
ス基板7上にダイボンド剤を介して固体撮像素子3を接
合固定する。次に、固体撮像素子3の電極部(不図示)
と導電膜7の一端部7aとをボンディングワイヤ8で接
続する。次いで、ベース基板2上の固体撮像素子3を囲
むようにして、その周囲に高粘度の樹脂を塗布し、これ
によってベース基板2上に所定高さの樹脂枠4を形成す
る。このとき樹脂枠4の高さ寸法は、後述する透明板5
との接合面を確保するために、最終的な規定高さよりも
若干高めに設定しておく。続いて、樹脂枠4の上端部に
透明板5を圧着し、この状態で加熱又は紫外線照射によ
り樹脂枠4を硬化させる。その際、樹脂枠4の上端部が
透明板5に押し潰されることで両者が面接合したかたち
となり、同時に樹脂枠4の高さ寸法が最終的な規定高さ
に調整される。これにより図1及び図2に示した固体撮
像装置1が得られる。
Here, a procedure for manufacturing the solid-state imaging device 1 of the present embodiment will be briefly described. First, a base substrate 7 is formed by integrally forming a conductive film 7 on a substrate, and the solid-state imaging device 3 is bonded and fixed on the base substrate 7 via a die bonding agent. Next, an electrode unit (not shown) of the solid-state imaging device 3
And one end 7 a of the conductive film 7 are connected by a bonding wire 8. Next, a high-viscosity resin is applied around the solid-state imaging device 3 on the base substrate 2 to form a resin frame 4 having a predetermined height on the base substrate 2. At this time, the height of the resin frame 4 is set to a transparent plate 5 described later.
In order to secure the joint surface with the final height, the height is set slightly higher than the final specified height. Subsequently, the transparent plate 5 is pressed against the upper end of the resin frame 4 and the resin frame 4 is cured by heating or irradiating ultraviolet rays in this state. At this time, the upper end of the resin frame 4 is crushed by the transparent plate 5 to form a surface-joined state, and at the same time, the height of the resin frame 4 is adjusted to the final specified height. Thus, the solid-state imaging device 1 shown in FIGS. 1 and 2 is obtained.

【0015】ちなみに、本実施形態においては、樹脂枠
4の形成にあたってベース基板2上に高粘度の樹脂を塗
布するようにしたが、これ以外にも、例えば半硬化(B
ステージ)状態の樹脂を予め枠状に成形しておき、これ
をベース基板2と透明板5との間に挟み込んで双方を同
時に熱圧着するようにしてもよい。
In this embodiment, a high-viscosity resin is applied on the base substrate 2 when forming the resin frame 4.
The resin in the (stage) state may be preliminarily formed into a frame shape, and this may be sandwiched between the base substrate 2 and the transparent plate 5 and both may be thermocompression-bonded simultaneously.

【0016】このように本実施形態の固体撮像装置1に
おいては、構造的にきわめて単純な平板構造のベース基
板2を採用し、そのベース基板2上に固体撮像素子3を
囲むように樹脂枠4を形成して、透明板5で固体撮像素
子3を気密封止した構造となっているので、従来よりも
基板製造工程が大幅に簡略化され、これによってベース
基板2の材料費や加工費を極力安くおさえることが可能
となる。また、ベース基板2と透明板5との間に所定高
さの樹脂枠4を介在させたことで、両基板間に生じる熱
応力を効果的に吸収することができ、これによって熱応
力に起因した樹脂枠4のクラックや各接合部での剥がれ
を防止することも可能となる。さらに、本発明に係る固
体撮像装置としては、従来の中空パッケージ構造と同様
に外部接続用の電極部をリード端子で構成することも可
能であるが、本実施形態のようにベース基板2の下面側
に露出させた導電膜7の端部7bを外部接続用の電極部
とすることで、さらなるコストダウンが期待できる。
As described above, in the solid-state imaging device 1 of the present embodiment, the base substrate 2 having a very simple flat plate structure is employed, and the resin frame 4 is formed on the base substrate 2 so as to surround the solid-state imaging device 3. Is formed, and the solid-state imaging device 3 is hermetically sealed with the transparent plate 5, so that the substrate manufacturing process is greatly simplified as compared with the related art, thereby reducing material and processing costs of the base substrate 2. It is possible to keep it as low as possible. Further, since the resin frame 4 having a predetermined height is interposed between the base substrate 2 and the transparent plate 5, it is possible to effectively absorb the thermal stress generated between the two substrates, thereby causing the thermal stress. It is also possible to prevent the cracked resin frame 4 and peeling at each joint. Further, in the solid-state imaging device according to the present invention, the electrode portion for external connection can be formed of a lead terminal as in the conventional hollow package structure. By using the end 7b of the conductive film 7 exposed to the side as an electrode portion for external connection, further cost reduction can be expected.

【0017】なお、上記実施形態では、ベース基板2に
セラミック基板を採用するようにしたが、これ以外にも
例えばガラスエポキシ基板等を採用することも可能であ
る。
In the above-described embodiment, a ceramic substrate is used as the base substrate 2, but a glass epoxy substrate or the like may be used instead.

【0018】[0018]

【発明の効果】以上説明したように本発明の固体撮像装
置によれば、平板構造をなすベース基板を採用し、この
ベース基板上に固体撮像素子を実装するとともに、その
固体撮像素子を囲む樹脂枠の上端部に透明板を接合し、
この透明板で固体撮像素子を気密封止した構造を採用し
たので、従来の中空パッケージ構造に比較して基板製造
工程が大幅に簡略化される。これにより、ベース基板の
材料費や加工費が安くなるため、固体撮像装置としての
コストダウンが図られる。また、固体撮像素子を所定の
空間内に気密封止しているため、ポッティング封止構造
を採用した場合の種々の不具合も確実に回避することが
できる。
As described above, according to the solid-state imaging device of the present invention, a base substrate having a flat plate structure is employed, a solid-state imaging device is mounted on the base substrate, and a resin surrounding the solid-state imaging device. Join the transparent plate to the upper end of the frame,
Since a structure in which the solid-state imaging device is hermetically sealed with this transparent plate is employed, the substrate manufacturing process is greatly simplified as compared with the conventional hollow package structure. As a result, the material cost and processing cost of the base substrate are reduced, so that the cost of the solid-state imaging device can be reduced. Further, since the solid-state imaging device is hermetically sealed in a predetermined space, various problems when the potting sealing structure is employed can be reliably avoided.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係る固体撮像装置の一実施形態を示す
分解斜視図である。
FIG. 1 is an exploded perspective view showing an embodiment of a solid-state imaging device according to the present invention.

【図2】本発明に係る固体撮像装置の一実施形態を示す
断面図である。
FIG. 2 is a cross-sectional view showing one embodiment of a solid-state imaging device according to the present invention.

【図3】従来の固体撮像装置の構造を示す断面図であ
る。
FIG. 3 is a cross-sectional view illustrating a structure of a conventional solid-state imaging device.

【図4】従来の固体撮像装置の構造を示す分解斜視図で
ある。
FIG. 4 is an exploded perspective view showing the structure of a conventional solid-state imaging device.

【符号の説明】 1 固体撮像装置 2 ベース基板 3 固体撮像
素子 4 樹脂枠 5 透明板 7 導電膜
[Description of Signs] 1 solid-state imaging device 2 base substrate 3 solid-state imaging device 4 resin frame 5 transparent plate 7 conductive film

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 平板構造をなすベース基板と、 前記ベース基板上に実装された固体撮像素子と、 前記固体撮像素子を囲む状態で前記ベース基板上に所定
の高さで形成された樹脂枠と、 前記ベース基板の素子実装面との間に所定の空間を確保
した状態で前記樹脂枠の上端部に接合され、前記ベース
基板上の固体撮像素子を前記所定の空間内に気密封止し
てなる透明板とから成ることを特徴とする固体撮像装
置。
A base substrate having a flat plate structure; a solid-state imaging device mounted on the base substrate; and a resin frame formed at a predetermined height on the base substrate so as to surround the solid-state imaging device. Is bonded to the upper end of the resin frame in a state where a predetermined space is secured between the device mounting surface of the base substrate and the solid-state imaging device on the base substrate is hermetically sealed in the predetermined space. A solid-state imaging device comprising: a transparent plate.
【請求項2】 前記ベース基板は、その基板上にパター
ン形成された導電膜の端部を外部接続用の電極部として
なることを特徴とする請求項1記載の固体撮像装置。
2. The solid-state imaging device according to claim 1, wherein the base substrate has an end portion of a conductive film patterned on the substrate as an electrode portion for external connection.
JP8304362A 1996-11-15 1996-11-15 Solid state image pickup apparatus Pending JPH10144898A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8304362A JPH10144898A (en) 1996-11-15 1996-11-15 Solid state image pickup apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8304362A JPH10144898A (en) 1996-11-15 1996-11-15 Solid state image pickup apparatus

Publications (1)

Publication Number Publication Date
JPH10144898A true JPH10144898A (en) 1998-05-29

Family

ID=17932114

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8304362A Pending JPH10144898A (en) 1996-11-15 1996-11-15 Solid state image pickup apparatus

Country Status (1)

Country Link
JP (1) JPH10144898A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010058590A (en) * 1999-12-30 2001-07-06 마이클 디. 오브라이언 Package for Charge Coupled Device Using Lead Frame And The Structure of Peripheral Leads Thereof
JP2005268567A (en) * 2004-03-19 2005-09-29 Matsushita Electric Ind Co Ltd Substrate and its manufacturing method
JP2008042186A (en) * 2006-07-11 2008-02-21 Sumitomo Bakelite Co Ltd Light receiving device and method of manufacturing light receiving device
WO2009008106A1 (en) * 2007-07-12 2009-01-15 Sumitomo Bakelite Co., Ltd. Light receiving device and method of manufacturing light receiving device
US7719097B2 (en) 2005-11-15 2010-05-18 Fujitsu Microelectronics Limited Semiconductor device having transparent member
JP2014175343A (en) * 2013-03-06 2014-09-22 Seiko Instruments Inc Wafer level package, process of manufacturing the same, and semiconductor apparatus
WO2021241053A1 (en) * 2020-05-28 2021-12-02 ソニーセミコンダクタソリューションズ株式会社 Solid-state imaging device and electronic apparatus

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010058590A (en) * 1999-12-30 2001-07-06 마이클 디. 오브라이언 Package for Charge Coupled Device Using Lead Frame And The Structure of Peripheral Leads Thereof
JP2005268567A (en) * 2004-03-19 2005-09-29 Matsushita Electric Ind Co Ltd Substrate and its manufacturing method
US7719097B2 (en) 2005-11-15 2010-05-18 Fujitsu Microelectronics Limited Semiconductor device having transparent member
US7932121B2 (en) 2005-11-15 2011-04-26 Fujitsu Semiconductor Limited Semiconductor device and manufacturing method of the same
JP2008042186A (en) * 2006-07-11 2008-02-21 Sumitomo Bakelite Co Ltd Light receiving device and method of manufacturing light receiving device
WO2009008106A1 (en) * 2007-07-12 2009-01-15 Sumitomo Bakelite Co., Ltd. Light receiving device and method of manufacturing light receiving device
JP2009021381A (en) * 2007-07-12 2009-01-29 Sumitomo Bakelite Co Ltd Light receiving device and manufacturing method of light receiving device
US8034651B2 (en) 2007-07-12 2011-10-11 Sumitomo Bakelite Co., Ltd. Light receiving device and method of manufacturing light receiving device
KR101109853B1 (en) * 2007-07-12 2012-02-17 스미토모 베이클리트 컴퍼니 리미티드 Light receiving device and meth0d 0f manufacturing light receiving device
JP2014175343A (en) * 2013-03-06 2014-09-22 Seiko Instruments Inc Wafer level package, process of manufacturing the same, and semiconductor apparatus
WO2021241053A1 (en) * 2020-05-28 2021-12-02 ソニーセミコンダクタソリューションズ株式会社 Solid-state imaging device and electronic apparatus

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