JP2004172511A - Semiconductor optical sensor - Google Patents

Semiconductor optical sensor Download PDF

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Publication number
JP2004172511A
JP2004172511A JP2002338860A JP2002338860A JP2004172511A JP 2004172511 A JP2004172511 A JP 2004172511A JP 2002338860 A JP2002338860 A JP 2002338860A JP 2002338860 A JP2002338860 A JP 2002338860A JP 2004172511 A JP2004172511 A JP 2004172511A
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Japan
Prior art keywords
resin
chip
optical sensor
semiconductor optical
base substrate
Prior art date
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JP2002338860A
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Japanese (ja)
Inventor
Toshiro Terakawa
敏郎 寺川
Eishin Kodama
英信 児玉
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YOSHIKAMA ELECTRONICS ENGINEERING KK
Yoshikawa Kogyo Co Ltd
Original Assignee
YOSHIKAMA ELECTRONICS ENGINEERING KK
Yoshikawa Kogyo Co Ltd
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Priority to JP2002338860A priority Critical patent/JP2004172511A/en
Publication of JP2004172511A publication Critical patent/JP2004172511A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]

Abstract

<P>PROBLEM TO BE SOLVED: To solve a problem that the set optical axis of a semiconductor optical sensor is deviated because of the generation of a warp on a resin-made base board in a resin package in which a chip is sealed. <P>SOLUTION: The semiconductor optical sensor consists of a plate-like resin-made base board 1, a semiconductor optical sensor chip 4 fixed on the center of the base board 1 by adhesive, a resin-made frame body 2 having approximately the same external size as the base board 1 and stuck so as to surround the chip 4, and a translucent cover member 3 stuck to the upper surface of the frame body 2. In the sensor, a difference of thermal expansion coefficients between the resin-made base board 1 and the chip 4 to be stuck to the base board 1 is ≤ 9×10<SP>-6</SP>/°C. The curing temperature of thermosetting resin adhesive 6 for fixing the chip 4 on the base board 1 is set to a range from room temperature to 100°C. <P>COPYRIGHT: (C)2004,JPO

Description

【０００１】
【発明の属する技術分野】
本発明は、バーコードリーダーやスキャナー等に使用される長尺のリニアセンサーのような半導体光センサーに関する。
【０００２】
【従来の技術】
係る半導体光センサーは、長尺の固体撮像素子（以下チップと記す）を中空のセラミック製の収納容器に接着剤で接着したのち、外部との電気的な接続をする為のインナーリードとチップの電極とを金線等で接続し、上部にガラス等の透明板を接着することで製造されていた。ところが、このセラミック製のパッケージは製造工程が煩雑であり、材料費や加工費が高価になるという問題があった。そのため、安価な方法として、セラミック製に代えて樹脂製のプリント配線板が使用されるようになった。
【０００３】
ところが、このような樹脂製のプリント配線基板を使用したパッケージでは、チップと封止樹脂との熱膨張係数の違いにより、反りが発生し、センサーの働きを阻害するという問題がある。
【０００４】
この熱膨張係数の違いによる問題を解決する手段として、例えば、特許文献１には、エポキシ樹脂中に無機微粒子を分散し、基板の中間にセラミック層を設けてプリント基板の熱膨張係数を小さくするとともに、チップを薄型のパッケージに封止してパッケージ全体の熱膨張係数を小さくすることが開示されている。
【０００５】
また、特許文献２には、ガラス繊維とエポキシ樹脂との積層板からなる基板に孔を開けて、その孔にエポキシ樹脂のみを充填してバンプに加わる応力を低下せしめて、チップと封止樹脂との熱膨張係数の違いによる応力を低下させるようにした基板が開示されている。
【０００６】
また、特許文献３には、ガラスエポキシからなるプリント基板上のＩＣチップとワイヤを熱硬化型のエポキシ樹脂の封止樹脂で封止する。そして、この封止樹脂の表面あるいは内部に基板とほぼ等しい線膨張係数のガラスクロスを配置することが開示されている。
【０００７】
さらに、特許文献４には、パッケージ基板の上面にそのパッケージ基板と同一材料の枠体を接着し、枠体の上面にガラス板を接着することによって、パッケージ基板と枠体との熱膨張係数を同じにして、接着後の熱応力によるパッケージ基板と枠体との間の反りと剥離を防止することが開示されている。
【０００８】
これらの従来の技術では、全て、プリント基板とチップを封止した樹脂パッケージのとの間の熱膨張係数の差をできるだけ小さくして、その間の反りと剥離を防止してプリント基板とパッケージ間を確実に接着しようとするものである。
【０００９】
【特許文献１】
特開平４−３２０３９０号公報
【００１０】
【特許文献２】
特開平５−２３５２０１号公報
【００１１】
【特許文献３】
特開２０００−１２４３６３号公報
【００１２】
【特許文献４】
特開２００２−１４１４３２号公報
【００１３】
【発明が解決しようとする課題】
半導体光センサーの特性を維持するために最も大きい要素の一つは、チップによるセンサー機能の維持である。ところが、半導体光センサーの樹脂パッケージ内の樹脂製のベース基板とその上面に接着されるチップとの間の熱膨張係数の差に起因して半導体光センサーの設定光軸に微妙な狂いが生じ、その本来の働きを阻害する問題がある。
【００１４】
前記の先行文献にも見られるとおり、従来の基板との接合箇所における熱膨張係数の差の問題は、樹脂パッケージとプリント基板との間の問題に限られ、樹脂パッケージ内の樹脂製のベース基板の反りに起因する半導体光センサーの設定光軸の微妙な狂いの問題については何等考慮されていない。
【００１５】
本発明が解決しようとする課題は、チップを封止した樹脂パッケージ内の樹脂製のベース基板の反りの発生に起因する半導体光センサーの設定光軸の狂いの問題を解決することにある。
【００１６】
【課題を解決するための手段】
本発明は、樹脂製のベース基板上へのチップの接着に際しての樹脂製ベース基板の反りの発生は、接着剤として使用される熱硬化性樹脂の適用温度による影響が大きいことに着目し本発明に至った。
【００１７】
チップを樹脂製のベース基板に接着するための接着剤としては、通常１５０℃以上で硬化する熱硬化性樹脂が使用されており、チップと樹脂基板は１５０℃以上の雰囲気で伸びた状態で固定され、冷却時に収縮する際に熱膨張係数の差により樹脂基板の方が収縮量が大きい為に反りが発生する。
【００１８】
その解決手段の第１は、樹脂製ベース基板の材料として、その熱膨張係数が接着すべきチップのそれに近い材料を採用することで収縮時の応力を低下させるものである。実質的には、ベース基板とチップとの熱膨張係数の差は９×１０−６／℃以下とすることで反りを低減し、設定光軸の狂いへの影響はなくすことができる。これ以上の差になると、収縮時の反りが大きくなり、半導体光センサーの機能が著しく阻害される。
【００１９】
また、その解決手段の第２は、チップと樹脂製ベース基板を固定する時の接着剤の硬化温度を低くすることで、常温に戻るまでの収縮量を小さくし反りの発生を抑えるもので、チップ固定のための接着剤として１００℃以下で硬化する接着剤を使用することで半導体光センサーの特性への影響をなくすことができる。
【００２０】
この場合、使用する熱硬化性接着剤としては、樹脂製ベース基板の反りを低減させるためにはできるだけ常温に近い硬化温度を有するものが望ましいが、常温硬化タイプのものは通常２液性であるために、混合工程が必要であり、また、混合してからは短時間で硬化する等、作業性が劣ることになる。
【００２１】
【発明の実施の形態】
以下、本発明の実施形態を添付の図１と図２によって説明する。
【００２２】
図１は、本発明を適用した半導体光センサーを断面によって示し、図２は、その外観を示す斜視図である。
【００２３】
図１および図２において、１は四角形状をなす樹脂製ベース基板で、その上部にベース基板１と概略同一外形寸法を持つ樹脂製枠体２が接着剤７により固定されている。この上部に、透明板３が接着剤８により接着されている。
【００２４】
樹脂製ベース基板１の中央部には、半導体光センサーチップ４が接着剤６により固定され、このチップ４の電極と表面に金めっきされた銅配線５が、ボンディングワイヤー９により電気的に接続されている。
【００２５】
樹脂製ベース基板１としては、プリント配線基板として使用されているガラスエポキシ基板は、ガラス繊維の配合量を増やすことで、その熱膨張係数は小さくなるので、半導体光センサーチップ４との熱膨張係数差が９×１０−６／℃以下となるように調整した。
【００２６】
また、樹脂製ベース基板１には、通常のプリント配線基板と同様の製造法で半導体光センサーチップ４と外部を電気的につなぐ為の回路が形成され、表面と裏面はスルーホールにより電気的に連結されている。最終的には、ルーター加工等の機械加工により所定形状を得た。
【００２７】
半導体光センサーチップ４を載せる空間を作る為の樹脂製枠体２は同じく機械加工により所定の形状に加工される。材質は、樹脂製ベース基板１と同じ材質でもよいが、内側加工端面から発生する切りくずが半導体光センサー４を阻害することのないよう、切りくず発生の少ないものを選定するとよい。また、発生くずを少なくする為には、機械加工ではなく、枠形状に樹脂で一体成形したものを用いてもよい。
【００２８】
樹脂製ベース基板１と樹脂製枠体２の貼り合わせは、ディスペンサーあるいはスクリーン印刷法により樹脂製ベース基板１上の樹脂製枠体２の接する部分に熱硬化性の接着剤７を塗布し、樹脂製枠体２を載せて硬化することで行われる。なお、接着剤としては、シート状に形成されたエポキシ樹脂接着剤を所定寸法に切断して熱圧着する方法で行うこともできる。
【００２９】
半導体光センサーチップ４の固定は、樹脂製ベース基板１の中央部にディスペンサーにより、熱硬化性接着剤６を塗布後、半導体光センサーチップ４を搭載し、１００℃以下の硬化温度で接着剤６を硬化することにより行われる。具体的には、半導体光センサーチップ４の熱膨張係数が３．５×１０−６／℃で、樹脂製ベース基板の熱膨張係数が１０〜１２×１０−６／℃であり、熱硬化性接着剤６として、ケミテック社製の硬化条件が７０℃×１時間のケミシールＥ−１２０２（商品名）と称されるエポキシ樹脂系の熱硬化性樹脂接着剤を用いた。
【００３０】
半導体光センサーチップ４と外部を電気的に接続する為に樹脂製ベース基板１上に形成された回路（銅配線５）と半導体光センサーチップ４の電極は、金線等のボンディングワイヤー９により接続される。接続には、通常のワイヤーボンダーが使用される。
【００３１】
最終的な封止の為の透明板３は、樹脂製枠体２上部にディスペンサー等で接着剤８を塗布した後に搭載し固定される。透明板３は、アクリル、ポリカーボネート等の透明プラスチック板やガラス板の中から要求される特性のものを選定すればよい。低コスト化の為にはプラスチック板が有利である。このための接着剤８としては、熱硬化タイプのものでもよいが、作業性の上からは紫外線硬化タイプのものが望ましい。
【００３２】
【発明の効果】
本発明によれば、セラミックパッケージに比べてはるかに安価な樹脂製ベース基板を用いる事が可能になり、低価格でかつ、軽量、小型の半導体光センサーを提供できる上、半導体光センサーチップと樹脂製ベース基板の組立時に反りが発生しない。
【００３３】
この半導体光センサーパッケージを駆動回路を形成したプリント基板上に組み付けるときにも歪や反りが生じないため、組立時に起因する設定光軸の狂いの無い半導体光センサー素子を提供することができる。
【図面の簡単な説明】
【図１】本発明を適用した半導体光センサーの断面図である。
【図２】図１の半導体光センサーの外観を示す斜視図である。
【符号の説明】
１ 樹脂製ベース基板
２ 樹脂製枠体
３ 透明板
４ 半導体光センサーチップ
５ 銅配線
６ チップ用接着剤
７ 枠体用接着剤
８ 透明板用接着剤
９ ボンディングワイヤー[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a semiconductor optical sensor such as a long linear sensor used for a barcode reader, a scanner, and the like.
[0002]
[Prior art]
Such a semiconductor optical sensor includes a long solid-state imaging device (hereinafter, referred to as a chip) bonded to a hollow ceramic storage container with an adhesive, and an inner lead and a chip for making an electrical connection to the outside. It has been manufactured by connecting an electrode with a gold wire or the like and bonding a transparent plate such as glass to the upper portion. However, this ceramic package has a problem in that the manufacturing process is complicated, and material costs and processing costs are high. Therefore, as an inexpensive method, a printed wiring board made of resin has been used instead of ceramic.
[0003]
However, in a package using such a printed wiring board made of a resin, there is a problem that warpage occurs due to a difference in thermal expansion coefficient between the chip and the sealing resin, and the function of the sensor is hindered.
[0004]
As means for solving the problem due to the difference in the coefficient of thermal expansion, for example, in Patent Document 1, inorganic fine particles are dispersed in an epoxy resin, and a ceramic layer is provided in the middle of the substrate to reduce the coefficient of thermal expansion of the printed circuit board. In addition, it discloses that a chip is sealed in a thin package to reduce the thermal expansion coefficient of the entire package.
[0005]
Further, Patent Document 2 discloses that a hole is formed in a substrate made of a laminated plate of glass fiber and an epoxy resin, and only the epoxy resin is filled in the hole to reduce the stress applied to the bump. A substrate is disclosed in which stress due to a difference in thermal expansion coefficient between the substrate and the substrate is reduced.
[0006]
In Patent Document 3, an IC chip and a wire on a printed board made of glass epoxy are sealed with a thermosetting epoxy resin sealing resin. It is disclosed that a glass cloth having a linear expansion coefficient substantially equal to that of the substrate is disposed on the surface or inside of the sealing resin.
[0007]
Further, in Patent Document 4, a frame of the same material as that of the package substrate is adhered to the upper surface of the package substrate, and a glass plate is adhered to the upper surface of the frame, so that the coefficient of thermal expansion between the package substrate and the frame is reduced. Similarly, it is disclosed that warpage and peeling between a package substrate and a frame due to thermal stress after bonding are prevented.
[0008]
In all of these conventional techniques, the difference in the coefficient of thermal expansion between the printed circuit board and the resin package in which the chip is sealed is made as small as possible, thereby preventing warpage and peeling between the printed circuit board and the package, thereby reducing the distance between the printed circuit board and the package. It is intended to ensure adhesion.
[0009]
[Patent Document 1]
JP-A-4-320390
[Patent Document 2]
JP-A-5-235201
[Patent Document 3]
JP 2000-124363 A
[Patent Document 4]
JP-A-2002-141432
[Problems to be solved by the invention]
One of the biggest factors for maintaining the characteristics of the semiconductor optical sensor is maintaining the sensor function by the chip. However, due to the difference in the coefficient of thermal expansion between the resin base substrate in the resin package of the semiconductor optical sensor and the chip bonded to the upper surface thereof, a subtle deviation occurs in the set optical axis of the semiconductor optical sensor, There is a problem that hinders its original function.
[0014]
As can be seen from the above-mentioned prior art documents, the problem of the difference in the coefficient of thermal expansion at the joint portion with the conventional board is limited to the problem between the resin package and the printed board, and the resin base board in the resin package No consideration is given to the problem of subtle deviation of the setting optical axis of the semiconductor optical sensor due to the warpage.
[0015]
The problem to be solved by the present invention is to solve the problem of the deviation of the set optical axis of the semiconductor optical sensor due to the warpage of the resin base substrate in the resin package in which the chip is sealed.
[0016]
[Means for Solving the Problems]
The present invention focuses on the fact that the occurrence of warpage of the resin-made base substrate during bonding of the chip onto the resin-made base substrate is greatly affected by the application temperature of the thermosetting resin used as the adhesive. Reached.
[0017]
As an adhesive for bonding the chip to the resin base substrate, a thermosetting resin that normally hardens at 150 ° C or higher is used, and the chip and the resin substrate are fixed in an extended state in an atmosphere of 150 ° C or higher. When the resin substrate shrinks during cooling, the resin substrate has a larger amount of shrinkage due to a difference in thermal expansion coefficient, so that warpage occurs.
[0018]
The first solution is to reduce the stress at the time of contraction by adopting a material whose thermal expansion coefficient is close to that of the chip to be bonded as the material of the resin base substrate. Practically, by setting the difference in the coefficient of thermal expansion between the base substrate and the chip to 9 × 10 −6 / ° C. or less, the warpage can be reduced, and the influence on the deviation of the set optical axis can be eliminated. If the difference is more than this, the warpage at the time of contraction becomes large, and the function of the semiconductor optical sensor is significantly impaired.
[0019]
A second solution is to lower the curing temperature of the adhesive when fixing the chip and the resin base substrate, thereby reducing the amount of shrinkage until the temperature returns to room temperature and suppressing the occurrence of warpage. By using an adhesive that cures at 100 ° C. or less as an adhesive for fixing the chip, it is possible to eliminate the influence on the characteristics of the semiconductor optical sensor.
[0020]
In this case, the thermosetting adhesive to be used preferably has a curing temperature as close to room temperature as possible in order to reduce the warpage of the resin base substrate, but the room temperature curing type is usually two-pack type. Therefore, a mixing step is necessary, and the workability is inferior, such as curing in a short time after mixing.
[0021]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, an embodiment of the present invention will be described with reference to FIGS.
[0022]
FIG. 1 is a cross-sectional view of a semiconductor optical sensor to which the present invention is applied, and FIG. 2 is a perspective view showing the appearance thereof.
[0023]
1 and 2, reference numeral 1 denotes a rectangular resin base substrate, on which a resin frame 2 having substantially the same external dimensions as the base substrate 1 is fixed by an adhesive 7. The transparent plate 3 is adhered to the upper part by an adhesive 8.
[0024]
A semiconductor optical sensor chip 4 is fixed to a central portion of the resin base substrate 1 with an adhesive 6, and electrodes of the chip 4 and copper wirings 5 whose surfaces are plated with gold are electrically connected by bonding wires 9. ing.
[0025]
As the resin base substrate 1, the glass epoxy substrate used as a printed wiring board has a smaller coefficient of thermal expansion by increasing the amount of glass fiber, so that the coefficient of thermal expansion with the semiconductor optical sensor chip 4 is reduced. It was adjusted so that the difference was 9 × 10 −6 / ° C. or less.
[0026]
In addition, a circuit for electrically connecting the semiconductor optical sensor chip 4 to the outside is formed on the resin base substrate 1 by a manufacturing method similar to that of a normal printed wiring board, and the front and rear surfaces are electrically connected by through holes. Are linked. Finally, a predetermined shape was obtained by machining such as router processing.
[0027]
The resin frame 2 for creating a space for mounting the semiconductor optical sensor chip 4 is similarly processed into a predetermined shape by machining. The material may be the same as that of the resin-made base substrate 1, but it is preferable to select a material that generates a small amount of chips so that chips generated from the inner processing end surface do not obstruct the semiconductor optical sensor 4. Further, in order to reduce the generated debris, it is possible to use not a machine process but a frame shape integrally formed of resin.
[0028]
The resin base substrate 1 and the resin frame 2 are bonded together by applying a thermosetting adhesive 7 to a portion of the resin base substrate 1 in contact with the resin frame 2 by a dispenser or a screen printing method. This is performed by placing the frame body 2 and curing it. In addition, as the adhesive, a method of cutting an epoxy resin adhesive formed in a sheet shape into a predetermined size and performing thermocompression bonding can be used.
[0029]
The semiconductor optical sensor chip 4 is fixed by applying a thermosetting adhesive 6 to a central portion of the resin base substrate 1 with a dispenser and mounting the semiconductor optical sensor chip 4 at a curing temperature of 100 ° C. or less. Is carried out by curing. Specifically, the thermal expansion coefficient of the semiconductor optical sensor chip 4 is 3.5 × 10 −6 / ° C., and the thermal expansion coefficient of the resin base substrate is 10 to 12 × 10 −6 / ° C. As the adhesive 6, an epoxy resin-based thermosetting resin adhesive called Chemiseal E-1202 (trade name) manufactured by Chemtec Co. under the curing condition of 70 ° C. × 1 hour was used.
[0030]
A circuit (copper wiring 5) formed on the resin-made base substrate 1 for electrically connecting the semiconductor optical sensor chip 4 to the outside and electrodes of the semiconductor optical sensor chip 4 are connected by bonding wires 9 such as gold wires. Is done. A normal wire bonder is used for the connection.
[0031]
The transparent plate 3 for final sealing is mounted and fixed after an adhesive 8 is applied to the upper portion of the resin frame 2 with a dispenser or the like. What is necessary is just to select what has the required characteristic from the transparent plastic plate, such as an acryl and a polycarbonate, or a glass plate. A plastic plate is advantageous for cost reduction. The adhesive 8 for this purpose may be a thermosetting type, but from the viewpoint of workability, an ultraviolet curable type is desirable.
[0032]
【The invention's effect】
According to the present invention, it is possible to use a resin base substrate that is much cheaper than a ceramic package, and it is possible to provide a low-cost, light-weight, small-sized semiconductor optical sensor, and a semiconductor optical sensor chip and a resin. No warpage occurs when assembling the base substrate.
[0033]
Even when this semiconductor optical sensor package is assembled on a printed circuit board on which a drive circuit is formed, no distortion or warpage occurs, so that it is possible to provide a semiconductor optical sensor element free from a deviation of the set optical axis due to the assembling.
[Brief description of the drawings]
FIG. 1 is a sectional view of a semiconductor optical sensor to which the present invention is applied.
FIG. 2 is a perspective view showing an appearance of the semiconductor optical sensor of FIG.
[Explanation of symbols]
REFERENCE SIGNS LIST 1 resin base substrate 2 resin frame 3 transparent plate 4 semiconductor optical sensor chip 5 copper wiring 6 chip adhesive 7 frame adhesive 8 transparent plate adhesive 9 bonding wire

Claims (2)

平板状の樹脂製ベース基板と、この基板上中央部に接着剤で固定された半導体光センサーチップとこのベース基板と概略同一外形寸法を有し、このチップをとり囲むような形状で接着された樹脂製枠体と、この枠体上面に接着された透光性のカバー部材からなる半導体光センサーにおいて、
前記樹脂製ベース基板と接着すべきチップとの熱膨張係数の差が９×１０−６／℃以下である半導体光センサー。A flat resin base substrate, a semiconductor optical sensor chip fixed to the center portion of the substrate with an adhesive, and having substantially the same outer dimensions as the base substrate, are bonded in a shape surrounding the chip. In a semiconductor light sensor comprising a resin frame and a light-transmitting cover member adhered to the upper surface of the frame,
A semiconductor optical sensor, wherein a difference in thermal expansion coefficient between the resin base substrate and a chip to be bonded is 9 × 10 −6 / ° C. or less. 平板状の樹脂製ベース基板と、この基板上中央部に接着剤で固定された半導体光センサーチップとこのベース基板と概略同一外形寸法を有し、このチップをとり囲むような形状で接着された樹脂製枠体と、この枠体上面に接着された透光性のカバー部材からなる半導体光センサーにおいて、
前記ベース基板上にチップを固定する熱硬化性樹脂接着剤の硬化温度が常温から１００℃の範囲にある半導体光センサー。A flat resin base substrate, a semiconductor optical sensor chip fixed to the center portion of the substrate with an adhesive, and having substantially the same outer dimensions as the base substrate, are bonded in a shape surrounding the chip. In a semiconductor light sensor comprising a resin frame and a light-transmitting cover member adhered to the upper surface of the frame,
A semiconductor optical sensor, wherein the curing temperature of the thermosetting resin adhesive for fixing the chip on the base substrate is in a range from room temperature to 100 ° C.
JP2002338860A 2002-11-22 2002-11-22 Semiconductor optical sensor Pending JP2004172511A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006090684A1 (en) * 2005-02-23 2006-08-31 A. L. M. T. Corp. Semiconductor element mounting member and semiconductor device using same
JP2007208045A (en) * 2006-02-02 2007-08-16 Sony Corp Imaging device, camera module, and method for manufacturing electronic equipment and imaging device
JP2009289830A (en) * 2008-05-27 2009-12-10 Mitsui Chemicals Inc Package for semiconductor element mounting

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006090684A1 (en) * 2005-02-23 2006-08-31 A. L. M. T. Corp. Semiconductor element mounting member and semiconductor device using same
JP4829877B2 (en) * 2005-02-23 2011-12-07 株式会社アライドマテリアル Semiconductor element mounting member and semiconductor device using the same
JP2007208045A (en) * 2006-02-02 2007-08-16 Sony Corp Imaging device, camera module, and method for manufacturing electronic equipment and imaging device
JP2009289830A (en) * 2008-05-27 2009-12-10 Mitsui Chemicals Inc Package for semiconductor element mounting

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