JP2008300462A - Method of manufacturing semiconductor device, and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device such that a semiconductor element having a lid body stuck directly on a top surface is mounted on an internal surface of a bottom portion of a container type base having its top made open and while the top surface of the lid body is exposed, an internal space of the base is charged with sealing resin, the semiconductor device being capable of avoiding breakage of an end of an exposed surface of the lid body by reducing stress during curing of the sealing resin while made thin. <P>SOLUTION: At a periphery of an area, where the semiconductor element 14 having the lid body 15 stuck directly on its bottom surface, of the bottom portion of the container type base 11 having the top made open, slit through hole portions 12 are formed along the respective sides of the area. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor device manufacturing method and a semiconductor device.

  Conventionally, as a manufacturing method of an optical module (semiconductor device) mounted on a camera module, for example, Patent Document 1 proposes a manufacturing method of a CCD module on which a CCD chip is mounted. In this CCD module manufacturing method, a CCD chip as an optical element is placed on an insulating substrate made of ceramic or the like, and an electrode pad on the CCD chip and a lead (electrode) on the insulating substrate are electrically connected by a thin metal wire. A guard ring made of glass epoxy or the like is disposed so as to surround the CCD chip, and a cover glass that covers the light receiving surface of the CCD chip is placed on the guard ring, and the insulating substrate and the guard ring are placed on the guard ring. Is a method of manufacturing a CCD module in which the inner space surrounded by a cover glass is sealed with a transparent resin, with the insulating substrate facing up and the lower part of the guard ring formed below it sealed and held with the cover glass A pair of resin injection holes communicating with the inside of the guard ring is provided in the insulating substrate, and transparent resin is injected from one resin injection hole Curing at Te, the heat shrinkage action of the cured transparent resin, cracks and bubbles are generated in the inside of the transparent resin, thereby preventing the generation of cracks in the cover glass.

  On the other hand, in recent years, due to the demand for thin optical modules, semiconductor elements (optical elements) such as CCD chips and CMOS chips, in which a light-transmitting lid such as glass is directly attached to the light receiving surface via an adhesive, are used. The inner space of the support body is sealed with resin in a state where the surface (upper surface) opposite to the semiconductor element of the lid body is exposed in a cavity of a container-type support body (package) formed of resin or ceramic. Stopped semiconductor devices (optical modules) have appeared. This conventional semiconductor device is shown in FIG.

  8A is a cross-sectional view of the support, FIG. 8B is a plan view of the support viewed from the back side, FIG. 8C is a plan view of the support viewed from the upper side, and FIG. FIG. 8E is a plan view of the semiconductor device viewed from the back surface side, and FIG. 8F is a plan view of the semiconductor device viewed from the top surface side (upper side).

  As shown in FIGS. 8A to 8C, a container-type support 11 having an open top has a pair of opposing side walls protruding from the bottom of the side walls, and another pair of opposing side walls. However, it protrudes from the step part 11a one step higher than the bottom part. A plurality of leads (electrodes) 13 are formed in a row at equal pitches on the step portion 11a. A plurality of external terminals 18 are formed on the back surface of the support 11 at an equal pitch.

  The support 11 is produced by stacking and sintering a plurality of material layers. The lead 13 and the external terminal 18 are formed by printing a metal paste on a material layer, and the lead 13 and the external terminal 18 are electrically connected through the side surface of the support 11.

  In this way, the inner surface (upper surface) of the bottom of the container-type support 11 in which the conductor portion (lead 13) is integrally provided is a die attach surface, which is shown in FIGS. 8 (d) to 8 (f). As described above, a semiconductor element (optical element) 14 in which a light-transmitting lid 15 such as glass is directly attached to a light receiving surface via an adhesive 20 is die-bonded by a die bonding material 19. The In addition, an electrode pad (not shown) on the semiconductor element 14 and a lead 13 on the step portion 11 a on both sides of the die attach surface are wire-bonded by a fine metal wire 16. Further, the internal space of the support 11 is resin-sealed with the sealing resin portion 17 in a state where the upper surface of the lid 15 is exposed. As the sealing resin constituting the sealing resin portion 17, a thermosetting resin or a photocurable resin is generally used.

Since the thinned semiconductor device has a structure in which the sealing resin is filled around the lid, the stress due to expansion and contraction when the sealing resin is cured is affected by the interface between the sealing resin and the support. In addition to the interface between the sealing resin and the semiconductor element, it also affects the side surface (outer peripheral surface) of the lid, and in addition to the separation between the sealing resin and the support and the separation between the sealing resin and the semiconductor element, There is a problem that the end of the exposed surface (exposed surface) of the body is damaged, and as in Patent Document 1 described above, simply providing a pair of resin injection holes that communicate with the inside of the guard ring is provided in the insulating substrate. The damage to the end of the exposed surface of the lid could not be avoided.
JP-A-8-236738

  In view of the above-described problems, the present invention provides a through-hole portion along each side of an element mounting region at the bottom of a container-type support body whose upper portion is open, thereby reducing the thickness of a semiconductor device. It is an object of the present invention to provide a method for manufacturing a semiconductor device and a semiconductor device capable of reducing the stress at the time of curing of the resin and avoiding damage to the end of the exposed surface of the lid.

  According to a first aspect of the present invention, there is provided a method for manufacturing a semiconductor device, comprising: a bottom surface of a semiconductor element in which a lid is bonded to a predetermined region on an upper surface of an element mounting region on an inner surface of a bottom portion of a container-type support body having an open top. Bonding the electrode formed on the inner surface of the support and the electrode on the semiconductor element with a thin metal wire, and supporting the adhesive tape covering the upper part of the support From the opening on the back side of the support part of the through-hole part formed along each side of the element mounting region, the step of attaching to the upper surface of the side wall portion of the body and the upper surface of the lid body, Injecting resin into the internal space of the support, and sealing the internal space of the support and the internal space of the through hole with the top surface of the lid exposed. Features.

  According to a second aspect of the present invention, there is provided a semiconductor device manufacturing method in which a lid is bonded to a predetermined region on an upper surface of an element mounting region on an inner surface of a bottom portion of a container-type support having an open top. Bonding the lower surface of the substrate, electrically connecting the electrode formed on the inner surface of the support and the electrode on the semiconductor element with a fine metal wire, and forming along each side of the element mounting region A step of affixing an adhesive tape that covers the opening on the back surface side of the support body of the through hole portion formed on the back surface of the support body, and applying resin from above the support body to the internal space of the support body And a step of resin sealing the internal space of the support and the internal space of the through hole with the top surface of the lid exposed.

  According to a third aspect of the present invention, there is provided a method for manufacturing a semiconductor device according to the first aspect, wherein the resin is injected by an injection nozzle when the resin is injected.

  According to a fourth aspect of the present invention, there is provided a method for manufacturing a semiconductor device according to the second aspect, wherein the resin is applied by an application nozzle when applied.

  The semiconductor device manufacturing method according to claim 5 of the present invention is the semiconductor device manufacturing method according to claim 3, wherein the resin other than the through hole portion for injecting the resin is injected. Deaeration is performed by a deaeration nozzle from an opening on the back side of the support at a part of the through hole.

  A semiconductor device manufacturing method according to claim 6 of the present invention is the semiconductor device manufacturing method according to claim 1, wherein the resin is injected by a printing method.

  A semiconductor device manufacturing method according to a seventh aspect of the present invention is the semiconductor device manufacturing method according to any one of the first to sixth aspects, wherein the through-hole portion is formed on each side of the element mounting region. It is a long hole provided for each.

  In addition, a manufacturing method of a semiconductor device according to an eighth aspect of the present invention is the manufacturing method of the semiconductor device according to any one of the first to sixth aspects, wherein the through-hole portion is each side of the element mounting region. A plurality are provided for each.

  According to a ninth aspect of the present invention, there is provided a semiconductor device manufacturing method according to the eighth aspect, wherein the through-hole portion is further provided for each corner portion of the element mounting region. It is characterized by.

  A method for manufacturing a semiconductor device according to a tenth aspect of the present invention is the method for manufacturing a semiconductor device according to any one of the first to ninth aspects, wherein the through hole is formed around the element mounting region. It is formed in a region.

  The semiconductor device manufacturing method according to an eleventh aspect of the present invention is the semiconductor device manufacturing method according to any one of the first to ninth aspects, wherein the through-hole portion is a peripheral portion of the element mounting region. It is characterized by being formed in a shape extending from the region to the surrounding region.

  A semiconductor device manufacturing method according to claim 12 of the present invention is the semiconductor device manufacturing method according to any one of claims 1 to 11, wherein the semiconductor element is an optical element, and the lid is It is a light-transmitting lid.

  According to a thirteenth aspect of the present invention, there is provided the semiconductor device according to the thirteenth aspect of the present invention, a container-type support having an open top, a through hole formed along each side of the element mounting region on the bottom inner surface of the support, An electrode formed on the inner surface of the support, a semiconductor element having a lower surface bonded to the element mounting region, a lid bonded to a predetermined region on the upper surface of the semiconductor element, and a surface of the semiconductor element The formed electrode, the fine metal wire that electrically connects the electrode of the support and the electrode of the semiconductor element, the internal space of the support and the internal space of the through hole portion, the upper surface of the lid And a sealing resin portion that is resin-sealed in an exposed state.

  The semiconductor device according to claim 14 of the present invention is the semiconductor device according to claim 13, wherein the through hole is a long hole provided for each side of the element mounting region. And

  The semiconductor device according to claim 15 of the present invention is the semiconductor device according to claim 13, wherein a plurality of the through holes are provided for each side of the element mounting region. To do.

  The semiconductor device according to claim 16 of the present invention is the semiconductor device according to claim 15, wherein the through-hole portion is further provided for each corner portion of the element mounting region. To do.

  A semiconductor device according to a seventeenth aspect of the present invention is the semiconductor device according to any one of the thirteenth to sixteenth aspects, wherein the through hole is formed in a region around the element mounting region. It is characterized by that.

  The semiconductor device according to claim 18 of the present invention is the semiconductor device according to any one of claims 13 to 16, wherein the through-hole portion is a region from a peripheral portion of the element mounting region to a peripheral region. It is characterized by being formed in a wide range of shapes.

  A semiconductor device according to claim 19 of the present invention is the semiconductor device according to any one of claims 13 to 18, wherein the semiconductor element is an optical element, and the lid is a light-transmitting lid. It is characterized by being.

  According to the preferred embodiment of the present invention, since the lid is directly attached to the semiconductor element, the semiconductor device can be thinned. Furthermore, since the through hole is provided along each side of the element mounting region at the bottom of the support, the stress at the time of curing the sealing resin can be reduced. That is, when the through hole is not provided at the bottom of the support, when the sealing resin expands and contracts, stress acts only on the surface where the sealing resin is exposed, that is, in the direction where the surface of the lid is exposed. In addition to the peeling between the sealing resin and the support, the peeling between the sealing resin and the semiconductor element, the peeling between the sealing resin and the lid, the end on the exposed surface side of the lid may be damaged. By providing through holes along each side of the element mounting region at the bottom of the support, the stress due to the expansion and contraction of the sealing resin is not limited to the direction in which the surface of the cover is exposed, Since it also works in the direction of the through hole at the bottom and allows the stress to escape from the through hole, the stress during curing of the sealing resin can be reduced.

  Therefore, even if the sealing resin is placed in an environment where it expands and contracts, the sealing resin and the support are peeled off, the sealing resin and the semiconductor element are peeled off, and the edge of the exposed surface of the lid is damaged. It can be avoided and quality and reliability can be improved.

  The structure described above is suitable for an optical module in which the semiconductor element is an optical element and the lid is a light-transmitting lid. For example, in a solid-state imaging device, when peeling occurs, moisture enters the peeling occurrence location and affects the quality. In addition, the breakage of the end face where the surface of the lid is exposed results in a defect as a solid-state imaging device because the light shielding effect is lost. According to the preferred embodiment of the present invention, the optical module can prevent peeling and breakage of the end face of the lid, and can ensure high reliability and high quality.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In each figure, the thickness, length, etc. of the constituent members are displayed in dimensions that are easy to show different from the actual figures. In addition, among the constituent members, the number of electrode pads and external terminals formed on the support is set to be different from the actual number. The material of each constituent member is not limited to the materials listed below. Moreover, the same code | symbol is attached | subjected to the same member and description is abbreviate | omitted suitably.

  1A and 1B are diagrams illustrating an example of a schematic configuration of an optical module that is a semiconductor device according to an embodiment of the present invention. FIG. 1A is a cross-sectional view of the optical module, and FIG. FIG. 1C is a plan view of the optical module viewed from the upper surface (upper side). Note that the cross section shown in FIG. 1A is a cross section taken along the line A-A ′ of FIG.

  As shown in FIG. 1, the optical module includes a container-type support 11 having an open top. The bottom surface of the support 11 is a die attach surface, and through holes 12 are formed along each side of the element mounting area of the die attach surface.

  Further, the support 11 has a pair of opposing side walls protruding from the bottom of the side wall, and another pair of opposing side walls protruding from the step 11a that is one step higher than the bottom, and each of the steps 11a includes a plurality of steps. Leads (electrodes) 13 are formed in rows at equal pitches. A plurality of external terminals 18 are formed on the back surface of the support 11 at an equal pitch.

  Here, a ceramic package is used as the support 11. A ceramic package is produced by stacking and sintering a plurality of layers of material. The lead 13 and the external terminal 18 are formed by printing a metal paste on a material layer, and the lead 13 and the external terminal 18 are electrically connected through the side surface of the support 11. In addition, you may use the package which made the resin the base material, and the whole is comprised with the conductor material, and used the package which covered the surface with the insulating resin in the state which exposed the lead part and the external terminal part. It doesn't matter.

  The lower surface of the semiconductor element (optical element) 14 is bonded to the element mounting region of the die attach surface of the support 11 via the die bonding material 19, and the imaging region (predetermined region) of the upper surface (light receiving surface) thereof. A light-transmitting lid 15 such as glass is directly attached via an adhesive 20. In this way, the imaging region is protected by covering the imaging region of the semiconductor element 14 with the lid 15.

  In addition, an electrode pad (not shown) formed in the peripheral portion of the upper surface of the semiconductor element 14 and the leads 13 on the step portions 11 a on both sides of the die attach surface of the support 11 are wire-bonded by a thin metal wire 16. Are electrically connected. Further, the sealing resin portion 17 resin seals the internal space of the support 11 and the internal space of the through hole portion 12 with the upper surface of the lid 15 exposed.

  The through-hole portion 12 is a long hole (slit) provided for each side of the element mounting region, and is formed in a region around the element mounting region. Thus, by providing the through-hole portion 12 for each side of the element mounting region, the stress at the time of curing of the sealing resin constituting the sealing resin portion 17 is released, and the stress is released without being inherent. Since the stress due to expansion and contraction when the sealing resin is cured can be reduced, the separation between the sealing resin portion 17 and the support 11 and the separation between the sealing resin portion 17 and the semiconductor element 14 can be avoided. In addition to the reduction, it is possible to reduce breakage of the end of the exposed surface (exposed surface) of the lid 15.

  Thus, since this optical module has a stress reducing structure, it has high reliability. That is, even if this optical module is placed in an environment where the sealing resin expands and contracts, it is difficult to receive stress due to the expansion and contraction of the sealing resin, and high reliability can be ensured. Further, since the lid 15 is directly bonded to the semiconductor element 14, the thickness is reduced.

  Subsequently, an optical module according to another embodiment of the present invention will be described. 2A and 2B are diagrams showing an example of a schematic configuration of an optical module that is a semiconductor device according to another embodiment of the present invention. FIG. 2A is a cross-sectional view of the optical module, and FIG. 2B is an optical module. FIG. 2C is a plan view of the optical module viewed from the upper surface (upper side). In addition, the cross section shown to Fig.2 (a) is a cross section of the B-B 'line | wire part of FIG.2 (c).

  In this optical module, the shape of the through hole 12 is different from that of the optical module shown in FIG. That is, as shown in FIG. 2, the through-hole portion 12 is formed to have a shape extending from the peripheral region to the peripheral region of the element mounting region.

  By forming the through-hole portion 12 in this way, the volume capable of releasing the stress due to the expansion and contraction of the sealing resin can be increased, and the stress is further dispersed. Therefore, the stress due to the expansion and contraction of the sealing resin is reduced. It can be further reduced. In addition, the stress generated at the interface between the sealing resin and the semiconductor element 14 can be further reduced, and peeling between the sealing resin and the semiconductor element 14 can be further reduced.

  Next, another example of the optical module according to the embodiment of the present invention will be described. FIG. 3 is a diagram showing another example of a schematic configuration of an optical module which is a semiconductor device according to an embodiment of the present invention.

  In this optical module, the through-hole portion 12 is formed at each corner portion of the element mounting area, and a plurality of through holes 12 are formed along each side of the element mounting area. Different. FIG. 3A and FIG. 3B are plan views of the optical module in which the through-hole portion 12 is formed in a region around the element mounting region when viewed from the back surface side and the top surface (upper side). 3C and 3D show the optical module formed so that the through hole 12 has a shape extending from the peripheral region to the peripheral region of the element mounting region on the back surface side and top surface ( It is the top view seen from the upper part side.

  In this manner, through holes 12 are provided at each corner of the element mounting area, and a plurality of through holes 12 are provided along each side of the element mounting area, so that the through holes can be formed while maintaining the flatness of the bottom of the support 11. It becomes possible to provide. The through holes may be arranged in a zigzag manner. The shape of the through hole is not limited to a quadrangle, and may be a circle, an ellipse, or a polygon.

  Then, the manufacturing method of an above-described optical module is demonstrated. In the following, a method for manufacturing an optical module in which the through hole 12 is formed in the area around the element mounting area will be described. The shape of the through hole 12 extending from the peripheral area to the surrounding area of the element mounting area The same applies to the optical module formed as described above.

  FIG. 4 is a process cross-sectional view illustrating a first method of manufacturing an optical module which is a semiconductor device according to an embodiment of the present invention. First, as shown to Fig.4 (a), the support body 11 by which the through-hole part 12 is formed in the bottom part is prepared. Although only one or two supports 11 are shown here, a plurality of operations are performed.

  Next, as shown in FIG. 4B, a light-transmitting lid 15 is directly bonded to the image pickup region via an adhesive (not shown) on the element mounting region of the die attach surface of the support 11. After the semiconductor element 14 is die-bonded using a die bond material (not shown), the lead 13 formed on the inner surface of the support 11 and the electrode pad (not shown) on the semiconductor element 14 are Au. Wire bonding is performed by a thin metal wire 16 such as a wire to make an electrical connection.

  As an adhesive for bonding the lid 15 to the semiconductor element 14, for example, an acrylic UV curable resin, an epoxy UV curable resin, or the like is used. Further, as the die bond material, Ag paste, LE tape or the like is used.

  Next, as shown in FIG. 4C, an adhesive tape 21 covering the upper part of the support 11 is attached to the upper surface of the side wall portion of the support 11 and the upper surface of the lid 15, and the bottom of the support 11 is Set to the upper side. The adhesive tape 21 is set so as to maintain an adhesive strength that does not cause resin leakage during resin injection. Thus, by sticking the adhesive tape 21 to the support body 11 and the lid body 15 and performing resin sealing, the sealing resin can be filled without impairing the function as an optical module.

  Next, as shown in FIG. 4 (d), when the sealing resin 17 a is injected into the internal space of the support 11 from the opening on the back surface side of the support 11 of any through hole 12 by the resin injection nozzle 22. At the same time, the degassing nozzle 23 is used to forcibly deaerate and suck from the opening on the back side of the support 11 in any through hole other than the through hole used for injection of the sealing resin 17a. At this time, the inner surface of the support 11, the surface of the semiconductor element 14, the fine metal wires 16, and the surface excluding the upper surface of the lid 15 are covered with the sealing resin 17 a.

  Thus, by using the deaeration suction mechanism, the filling time of the sealing resin 17a can be shortened and the resin filling property is improved. Furthermore, since voids in the resin are reduced, quality and reliability are improved. In addition, by performing injection and degassing of the sealing resin using a plurality of nozzles, a large number of treatments can be performed at a time, and productivity can be improved.

  Next, as shown in FIG. 4E, the sealing resin 17a is cured. The sealing resin is cured by heating when a thermosetting resin is used as the sealing resin. Moreover, when using a photocurable resin, it hardens | cures by irradiating the light of a predetermined frequency. Then, as shown in FIG.4 (f), the adhesive tape 21 is peeled off. Through the above steps, an optical module in which the internal space of the support 11 and the internal space of the through hole portion 12 are resin-sealed with the upper surface of the lid 15 exposed is completed.

  Next, another example of the method for manufacturing an optical module will be described. FIG. 5 is a process cross-sectional view illustrating a second manufacturing method of the optical module which is the semiconductor device according to the embodiment of the present invention. First, as shown in FIG. 5A, the support 11 is prepared in the same manner as the step shown in FIG. Although only one support 11 is shown here, a plurality of operations are performed.

  Next, as shown in FIG. 5 (b), as in the step shown in FIG. 4 (b), the lid 15 is attached to the element mounting area on the die attach surface of the support 11 and the imaging area is covered with an adhesive (not shown). The semiconductor element 14 that is directly bonded via the die 11 is die-bonded using a die bond material (not shown), and the lead 13 of the support 11 and the electrode pad (not shown) on the semiconductor element 14 are connected. The thin metal wires 16 are wire-bonded and electrically connected.

  Next, as shown in FIG. 5C, an adhesive tape 21 that covers the opening on the back surface side of the support body 11 of the through hole 12 is attached to the back surface of the support body 11. The adhesive tape 21 is set so as to maintain an adhesive strength that does not cause resin leakage when the sealing resin is applied. By sticking the adhesive tape 21 to the support 11 and performing resin sealing in this way, the sealing resin can be filled without impairing the function as an optical module.

  Next, as shown in FIG. 5D, the sealing resin 17 a is applied from the upper part of the support 11 to the internal space of the support 11 by the application nozzle 24. At this time, the inner surface of the support 11, the surface of the semiconductor element 14, the fine metal wires 16, and the surface excluding the upper surface of the lid 15 are covered with the sealing resin 17 a. In addition, by applying the sealing resin using a plurality of nozzles, a large number of treatments can be performed at one time, and productivity can be improved. Further, a multi-type application nozzle may be used. Moreover, you may use methods, such as printing sealing and an inkjet, without using an application nozzle.

  Next, as shown in FIG. 5 (e), after the sealing resin 17a is cured, as shown in FIG. 5 (f), the adhesive tape 21 is removed as shown in FIG. 5 (e). Remove. Through the above steps, an optical module in which the internal space of the support 11 and the internal space of the through hole portion 12 are resin-sealed with the upper surface of the lid 15 exposed is completed.

  Next, another example of the method for manufacturing an optical module will be described. FIG. 6 is a process cross-sectional view illustrating a third method for manufacturing an optical module which is a semiconductor device according to an embodiment of the present invention. First, as shown in FIG. 6A, the support 11 is prepared in the same manner as in the step shown in FIG. Although only one or two supports 11 are shown here, a plurality of operations are performed.

  Next, as shown in FIG. 6 (b), as in the step shown in FIG. 4 (b), the lid 15 is attached to the imaging region in the element mounting region on the die attach surface of the support 11 (not shown). The semiconductor element 14 that is directly bonded via the die 11 is die-bonded using a die bond material (not shown), and the lead 13 of the support 11 and the electrode pad (not shown) on the semiconductor element 14 are connected. The thin metal wires 16 are wire-bonded and electrically connected.

  Next, as shown in FIG.6 (c), while sticking the adhesive tape 21 similarly to the process shown in FIG.4 (c), the bottom part of the support body 11 is turned up. Here, after that, the mask plate 25 is placed on the back surface of the support 11.

  Next, as shown in FIG. 6 (d), the sealing resin 17 a is formed in the interior space of the support 11 from the opening on the back side of the support 11 of any through hole 12 by a printing method using a squeegee 26. Inject. At this time, the inner surface of the support 11, the surface of the semiconductor element 14, the fine metal wires 16, and the surface excluding the upper surface of the lid 15 are covered with the sealing resin 17 a. At this time, some of the through holes 12 are not used as injection ports.

  Next, as shown in FIG. 6 (e), after the sealing resin 17a is cured, as shown in FIG. 6 (f), the adhesive tape 21 is removed as shown in FIG. 4 (e). Remove. Through the above steps, an optical module in which the internal space of the support 11 and the internal space of the through hole portion 12 are resin-sealed with the upper surface of the lid 15 exposed is completed.

  Next, a lens module on which an optical module that is a semiconductor device according to an embodiment of the present invention is mounted will be described. FIG. 7 is a cross-sectional view showing an example of a lens module on which an optical module that is a semiconductor device according to an embodiment of the present invention is mounted.

  As shown in FIG. 7, the lens module has a configuration in which a lens case 32 to which a lens 31 is attached is attached to the above-described optical module via a package holder 33. Since the optical module is thin and has high reliability, the lens module is also thin and has high reliability.

  According to the method for manufacturing a semiconductor device and the semiconductor device according to the present invention, it is possible to ensure high reliability while reducing the thickness of the semiconductor device, and it is particularly useful as an optical module mounted on a mobile phone, a digital camera, or the like. .

The figure which shows an example of schematic structure of the optical module which is a semiconductor device concerning embodiment of this invention The figure which shows an example of schematic structure of the optical module which is a semiconductor device concerning other embodiment of this invention. The figure which shows the other example of schematic structure of the optical module which is a semiconductor device concerning embodiment of this invention Process sectional drawing which shows the 1st manufacturing method of the optical module which is a semiconductor device concerning embodiment of this invention Sectional drawing which shows the 2nd manufacturing method of the optical module which is a semiconductor device concerning embodiment of this invention Process sectional drawing which shows the 3rd manufacturing method of the optical module which is a semiconductor device concerning embodiment of this invention Sectional drawing which shows an example of the lens module carrying the optical module which is a semiconductor device concerning embodiment of this invention Cross-sectional view of a support used in a conventional CCD module, a plan view of the support viewed from the back side and the top surface, a cross-sectional view of a conventional CCD module, and a plan view of the CCD module viewed from the back side and the top side

Explanation of symbols

DESCRIPTION OF SYMBOLS 11 Support body 11a Step part of support body 12 Through-hole part 13 Lead (electrode of support body)
14 Semiconductor Element 15 Lid (Light Transmittance)
16 Metal Fine Wire 17 Sealing Resin 17a Sealing Resin 18 External Terminal 19 Die Bond Material 20 Adhesive 21 Adhesive Tape 22 Resin Injection Nozzle 23 Deaeration Nozzle 24 Application Nozzle 25 Mask Plate 26 Squeegee 31 Lens 32 Lens Case 33 Package Holding

Claims (19)

Adhering a lower surface of a semiconductor element having a lid bonded to a predetermined region of the upper surface to an element mounting region on the inner surface of the bottom of a container-type support body whose upper portion is opened;
Electrically connecting the electrode formed on the inner surface of the support and the electrode on the semiconductor element with a thin metal wire;
Adhering an adhesive tape covering the upper part of the support to the upper surface of the side wall of the support and the upper surface of the lid;
Resin is injected into the internal space of the support from the opening on the back side of the support at a part of the through hole formed along each side of the element mounting region, and the upper surface of the lid is A step of resin-sealing the internal space of the support and the internal space of the through hole in an exposed state;
A method for manufacturing a semiconductor device, comprising: Adhering a lower surface of a semiconductor element having a lid bonded to a predetermined region of the upper surface to an element mounting region on the inner surface of the bottom of a container-type support body whose upper portion is opened;
Electrically connecting the electrode formed on the inner surface of the support and the electrode on the semiconductor element with a thin metal wire;
Adhering an adhesive tape that covers the opening on the back side of the support of the through hole formed along each side of the element mounting region to the back of the support;
Applying resin from above the support to the internal space of the support, and sealing the internal space of the support and the internal space of the through hole with the top surface of the lid exposed When,
A method for manufacturing a semiconductor device, comprising:   2. The method for manufacturing a semiconductor device according to claim 1, wherein the resin is injected by an injection nozzle.   3. The method of manufacturing a semiconductor device according to claim 2, wherein the resin is applied by an application nozzle.   When injecting the resin, degassing is performed by a degassing nozzle from an opening on the back side of the support in a part of the through hole portion other than the through hole portion into which the resin is injected. A method for manufacturing a semiconductor device according to claim 3.   2. The method of manufacturing a semiconductor device according to claim 1, wherein the resin is injected by a printing method.   The method of manufacturing a semiconductor device according to claim 1, wherein the through-hole portion is a long hole provided for each side of the element mounting region.   7. The method of manufacturing a semiconductor device according to claim 1, wherein a plurality of the through holes are provided for each side of the element mounting region.   9. The method of manufacturing a semiconductor device according to claim 8, wherein the through-hole portion is further provided for each corner portion of the element mounting region.   The method for manufacturing a semiconductor device according to claim 1, wherein the through hole is formed in a region around the element mounting region.   10. The method of manufacturing a semiconductor device according to claim 1, wherein the through hole is formed in a shape extending from a peripheral region to a peripheral region of the element mounting region.   The method for manufacturing a semiconductor device according to claim 1, wherein the semiconductor element is an optical element, and the lid is a light-transmitting lid. A container-type support with an open top;
A through hole formed along each side of the element mounting region of the bottom inner surface of the support;
An electrode formed on the inner surface of the support;
A semiconductor element having a lower surface bonded to the element mounting region;
A lid bonded to a predetermined region on the upper surface of the semiconductor element;
An electrode formed on a surface of the semiconductor element;
A fine metal wire that electrically connects the electrode of the support and the electrode of the semiconductor element;
A sealing resin portion for resin-sealing the internal space of the support and the internal space of the through-hole portion in a state where the upper surface of the lid is exposed;
A semiconductor device comprising:   The semiconductor device according to claim 13, wherein the through-hole portion is a long hole provided for each side of the element mounting region.   The semiconductor device according to claim 13, wherein a plurality of the through holes are provided for each side of the element mounting region.   The semiconductor device according to claim 15, wherein the through hole portion is further provided for each corner portion of the element mounting region.   The semiconductor device according to claim 13, wherein the through hole is formed in a region around the element mounting region.   The semiconductor device according to claim 13, wherein the through hole is formed in a shape extending from a peripheral region to a peripheral region of the element mounting region.   The semiconductor device according to claim 13, wherein the semiconductor element is an optical element, and the lid is a light-transmissive lid.

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