JP2008244143A - Method of manufacturing semiconductor light-emitting device - Google Patents

Method of manufacturing semiconductor light-emitting device Download PDF

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JP2008244143A
JP2008244143A JP2007082545A JP2007082545A JP2008244143A JP 2008244143 A JP2008244143 A JP 2008244143A JP 2007082545 A JP2007082545 A JP 2007082545A JP 2007082545 A JP2007082545 A JP 2007082545A JP 2008244143 A JP2008244143 A JP 2008244143A
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lead frame
light emitting
mold
film material
emitting element
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Takahiro Suzuki
隆博 鈴木
Yukinori Aoki
幸典 青木
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Toshiba Corp
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Toshiba Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Led Device Packages (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor light-emitting device in which a lead flash is suppressed and internal optical reflectivity is improved. <P>SOLUTION: The method includes the steps of: clamping a lead frame 30 by a first metal mold 10 and a second metal mold 20 while interposing a first film material 12 between the lead frame 30 and the first metal mold 10; filling resin between the first film material 12 and the second metal mold 20 while making part of the lead frame 10, which will be a region where a light emitting element is mounted and an external terminal region, closely attached to the first film material 12 to form a resin molded body having a recess that includes the mounting region therein; and placing the light-emitting element in the mounting region. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、半導体発光装置の製造方法に関する。   The present invention relates to a method for manufacturing a semiconductor light emitting device.

リードフレーム状のインサート部品を含んだ樹脂成型体を形成し、半導体素子を組み込んだ半導体装置は電子機器に広く用いられる。近年、電子機器の小型化の要求が強まっており、半導体装置の小型化もますます重要となっている。   A semiconductor device in which a resin molded body including a lead frame-like insert part is formed and a semiconductor element is incorporated is widely used in electronic equipment. In recent years, there has been an increasing demand for miniaturization of electronic devices, and miniaturization of semiconductor devices has become increasingly important.

上記構造の場合、小型化に伴って金型精度やリードフレーム部品精度の維持が困難となり、金型接触面積も小さくなる。このために金型及びリードフレーム間に空隙を生じやすくなり、リードフレームに樹脂がバリとなって付くリードフラッシュを生じる。リードフラッシュがあるとリードフレームへの半導体素子の接着及び実装基板へのリードの接着が困難になる。   In the case of the above-described structure, it is difficult to maintain the mold accuracy and lead frame component accuracy as the size is reduced, and the mold contact area is also reduced. For this reason, it becomes easy to produce a space | gap between a metal mold | die and a lead frame, and the lead flash | flush which resin adheres to a lead frame and a burr | flash occurs. When there is a lead flash, it becomes difficult to bond the semiconductor element to the lead frame and the lead to the mounting substrate.

回路基板に形成された開口凹部を樹脂封止する際に、端子接合部の傷や樹脂汚れが生じることなく生産性を向上させた樹脂封止方法に関する技術開示例がある（特許文献１）
特開２００１−２５０８３７号公報 There is an example of a technical disclosure related to a resin sealing method in which productivity is improved without causing scratches or resin stains on terminal joints when resin-sealing an opening recess formed in a circuit board (Patent Document 1).
JP 2001-250837 A

しかしながら、半導体発光装置においてはリードフラッシュを抑制するだけでは十分ではない。すなわち、パッケージ内部において発光素子からの放射光を効率よく反射することが必要である。本発明は、リードフラッシュが抑制され、内部における光反射率が改善された半導体発光装置の製造方法を提供する。   However, it is not sufficient to suppress the read flash in the semiconductor light emitting device. That is, it is necessary to efficiently reflect the emitted light from the light emitting element inside the package. The present invention provides a method for manufacturing a semiconductor light emitting device in which lead flash is suppressed and the light reflectance inside is improved.

本発明の一態様によれば、リードフレームと第１の金型との間に第１のフィルム材を介在させた状態で、前記第１の金型及び第２の金型により前記リードフレームをクランプする工程と、発光素子の実装領域及び外部端子領域となる前記リードフレームの一部を前記第１のフィルム材と密着させた状態で前記第１のフィルム材と前記第２の金型との間に樹脂を注入し、前記実装領域を内部に含む凹部を有する樹脂成型体を形成する工程と、前記実装領域に前記発光素子を配置する工程と、を備えたことを特徴とする半導体発光装置の製造方法が提供される。   According to an aspect of the present invention, the lead frame is held by the first mold and the second mold in a state where the first film material is interposed between the lead frame and the first mold. The first film material and the second mold in a state in which a part of the lead frame that becomes the mounting region and the external terminal region of the light emitting element is in close contact with the first film material A semiconductor light emitting device comprising: a step of injecting a resin therebetween to form a resin molded body having a recess including the mounting region therein; and a step of disposing the light emitting element in the mounting region A manufacturing method is provided.

また、本発明の他の一態様によれば、リードフレームと第１の金型との間に第１のフィルム材を介在させ、前記リードフレームと第２の金型との間に第２のフィルム材を介在させた状態で、前記第１及び第２の金型により前記リードフレームをクランプする工程と、発光素子の実装領域及び外部端子領域となる前記リードフレームの一部を前記第１及び第２のフィルム材と密着させた状態で前記第１と第２のフィルム材との間に樹脂を注入し、前記実装領域を内部に含む凹部を有する樹脂成型体を形成する工程と、前記実装領域に前記発光素子を配置する工程と、を備えたことを特徴とする半導体発光装置の製造方法が提供される。   According to another aspect of the present invention, a first film material is interposed between the lead frame and the first mold, and a second film is interposed between the lead frame and the second mold. A step of clamping the lead frame by the first and second molds with a film material interposed therebetween, and a part of the lead frame serving as a mounting region and an external terminal region of the light emitting element; A step of injecting a resin between the first and second film materials in close contact with the second film material to form a resin molded body having a recess including the mounting region therein; and the mounting And a step of disposing the light emitting element in a region. A method of manufacturing a semiconductor light emitting device is provided.

本発明により、リードフラッシュが抑制され、内部における光反射率が改善された半導体発光装置の製造方法が提供される。   According to the present invention, there is provided a method for manufacturing a semiconductor light emitting device in which lead flash is suppressed and internal light reflectance is improved.

以下、図面を参照しつつ本発明の実施の形態について説明する。
図１は本発明の実施の形態にかかる半導体発光装置の製造方法を表すフロー図である。 また、図２は金型を用いた成形工程を表す工程断面図であり、図２（ａ）は成型前、図２（ｂ）は成型状態、図２（ｃ）は成型部分の拡大図、図２（ｄ）は成型後を表す。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a flowchart showing a method for manufacturing a semiconductor light emitting device according to an embodiment of the present invention. 2 is a process cross-sectional view showing a molding process using a mold, FIG. 2 (a) is before molding, FIG. 2 (b) is a molding state, FIG. 2 (c) is an enlarged view of the molding part, FIG. 2D shows the state after molding.

リードフレーム３０は、例えば数十個の多数個取りとされる。リードフレーム３０を金型８に挟んで樹脂成型する場合、リードフレーム３０と上金型１０との間に、柔軟性及び展性に富み弾性変形が大きいフィルム材１２を挟む（ステップＳ１０２）。フィルム材１２は、真空吸引などにより上金型１０の表面に密着かつ固定することができる。   For example, several tens of lead frames 30 are taken. When resin molding is performed with the lead frame 30 sandwiched between the molds 8, the film material 12, which is flexible and malleable and has large elastic deformation, is sandwiched between the lead frame 30 and the upper mold 10 (step S 102). The film material 12 can be adhered and fixed to the surface of the upper mold 10 by vacuum suction or the like.

なお、図２ではリードフレーム３０と下金型２０との間にもフィルム材１４を挟んであるが、フィルム材１２及びフィルム材１４は同一材料でなくともよい。また、下金型２０の表面を覆うフィルム材１４は、リードフレーム３０の下面におけるリードフラッシュやガスによる汚れを許容できる場合には省略できる。リードフレーム３０の材料は、例えば厚み０．１５〜０．３ｍｍの無酸素銅とする。   In FIG. 2, the film material 14 is also sandwiched between the lead frame 30 and the lower mold 20, but the film material 12 and the film material 14 may not be the same material. Further, the film material 14 covering the surface of the lower mold 20 can be omitted when contamination by lead flash or gas on the lower surface of the lead frame 30 can be allowed. The material of the lead frame 30 is, for example, oxygen-free copper having a thickness of 0.15 to 0.3 mm.

フィルム材１２、１４は樹脂成型における加熱温度に耐えられる耐熱性を有しかつ金型からの離型が容易である材料が好ましく、例えばポリプロピレン、ポリ塩化ビニリジン、ＰＥＴ（ポリエチレンテレフタレート）、ゴムなどとする。また、フィルム材１２、１４の厚みは、例えば２５〜１００μｍとする。   The film materials 12 and 14 are preferably materials that have heat resistance that can withstand the heating temperature in resin molding and that can be easily released from the mold, such as polypropylene, polyvinylidyne chloride, PET (polyethylene terephthalate), rubber, and the like. To do. Moreover, the thickness of the film materials 12 and 14 shall be 25-100 micrometers, for example.

リードフレーム３０及びフィルム材１２、１４が金型８にクランプされると、金型部品精度のために隙間ができそうになってもフィルム材１２、１４の弾性変形範囲内であれば隙間の発生を抑制できる。また、リードフレーム３０の厚みにばらつきがあっても、フィルム１２、１４の弾性変形範囲内であれば、金型８の破損や隙間の発生を抑制できる。   When the lead frame 30 and the film materials 12 and 14 are clamped to the mold 8, a gap is generated as long as it is within the elastic deformation range of the film materials 12 and 14 even if a gap is likely to occur due to the accuracy of the mold parts. Can be suppressed. Even if the thickness of the lead frame 30 varies, damage to the mold 8 and generation of gaps can be suppressed as long as they are within the elastic deformation range of the films 12 and 14.

また、複数の部品で構成される金型８の分割面がフィルム材１２、１４により覆われるので、分割面における空隙への樹脂流入を抑制することができる。このために、図２（ｂ）のように樹脂成型体を形成したい箇所にリードフレーム３０側から樹脂が注入される（ステップＳ１０４）。樹脂の材料は、例えば熱硬化性を有するエポキシ樹脂などが用いられる。   Moreover, since the division | segmentation surface of the metal mold | die 8 comprised with several components is covered with the film materials 12 and 14, the resin inflow to the space | gap in a division | segmentation surface can be suppressed. For this purpose, as shown in FIG. 2B, resin is injected from the lead frame 30 side into a location where a resin molded body is desired to be formed (step S104). As the resin material, for example, a thermosetting epoxy resin or the like is used.

図２（ｃ）はフィルム材１２を取り除く前のパッケージ６の模式断面図を表す。発光素子３６が接着されるリードフレーム３０の実装領域及び外部端子領域はフィルム１２と密着しているので隙間に樹脂及び金型８などから発生するガスが流入することを抑制でき、リードフレーム３０の表面を清浄に保つことが容易となる。   FIG. 2C shows a schematic cross-sectional view of the package 6 before the film material 12 is removed. Since the mounting area and the external terminal area of the lead frame 30 to which the light emitting element 36 is bonded are in close contact with the film 12, it is possible to prevent the gas generated from the resin and the mold 8 from flowing into the gap. It becomes easy to keep the surface clean.

このために発光素子３６がリード３０ａに確実かつ容易にマウントでき、リード３０ａの表面の光反射率を高く保つことができる。なお、このフィルム材１２が付着した図２（ｃ）の状態で保存するとリードフレーム３０の表面の酸化及び汚れを抑制でき、発光素子３６のマウント以降の工程が容易となり、リードフレームの反射率の低下も抑制できる。   Therefore, the light emitting element 36 can be reliably and easily mounted on the lead 30a, and the light reflectance of the surface of the lead 30a can be kept high. When the film material 12 is attached and stored in the state of FIG. 2C, the oxidation and contamination of the surface of the lead frame 30 can be suppressed, the steps after the mounting of the light emitting element 36 are facilitated, and the reflectance of the lead frame can be reduced. The decrease can also be suppressed.

成型後、図２（ｄ）のように金型８から離型し、フィルム材１２、１４を除去する（ステップＳ１０６）。金型８にクランプされたフィルム材１２、１４は、図２（ｄ）のような形状に変形しており空隙を埋めていることを表している。   After molding, the mold material 8 is released from the mold 8 as shown in FIG. 2D, and the film materials 12 and 14 are removed (step S106). The film materials 12 and 14 clamped to the mold 8 are deformed into a shape as shown in FIG. 2D, indicating that the gap is filled.

図３は、パッケージ６の模式斜視図（ひとつ分）である。
樹脂成型体３２は凹部４０を有し、その底面には対向する２つのリード３０ａ、３０ｂの端部が露出する。リード３０ａが延在し、凹部４０の底面において発光素子３６がマウントされる面として実装領域３０ｃが露出している。また、リード３０ｂが延在し、凹部４０の底面において、発光素子３６からワイヤが接続される面として実装領域３０ｄが露出している。これら実装領域３０ｃ、３０ｄの間には、樹脂成型体３２の一部が露出している。また凹部４０は上に向かって拡開する形状とし、例えば金属膜または反射性フィラーを添加した樹脂とした面を反射面３２ａとすることにより、発光素子３６からの放射光を上方に向けて反射させ、光取り出し効率を高めることができる。 FIG. 3 is a schematic perspective view (for one) of the package 6.
The resin molded body 32 has a recess 40, and the ends of the two leads 30a and 30b facing each other are exposed on the bottom surface thereof. The lead 30 a extends, and the mounting region 30 c is exposed as a surface on which the light emitting element 36 is mounted on the bottom surface of the recess 40. Further, the lead 30b extends, and the mounting region 30d is exposed on the bottom surface of the recess 40 as a surface to which a wire is connected from the light emitting element 36. A part of the resin molded body 32 is exposed between the mounting regions 30c and 30d. The concave portion 40 has a shape that expands upward. For example, a reflective surface 32a is used as a resin surface to which a metal film or a reflective filler is added, so that the emitted light from the light emitting element 36 is reflected upward. Light extraction efficiency can be increased.

この場合、側壁表面にはフィルム材１２の表面が転写されるので、平滑な表面状態のフィルム材１２を用いることにより、光反射率を高めることができる。すなわち、金型８の表面より平滑な樹脂表面を容易に得ることができる。すなわち、通常の金型では表面の平滑性に限界があるが表面が平滑なフィルム材１２を用いることによりフィルム材１２の表面状態が転写され、反射率の高い平滑な表面を容易に得ることができる。   In this case, since the surface of the film material 12 is transferred to the sidewall surface, the light reflectance can be increased by using the film material 12 having a smooth surface state. That is, a smooth resin surface can be easily obtained from the surface of the mold 8. That is, although the smoothness of the surface is limited in a normal mold, by using the film material 12 having a smooth surface, the surface state of the film material 12 is transferred, and a smooth surface having a high reflectance can be easily obtained. it can.

図４は半導体発光装置の模式断面図である。Ａｇペーストまたは金属半田などのマウント材３５により発光素子３６を実装領域３０ｃにマウントし、ボンディングワイヤ３８などによりリード３０ｂとの電気的接続を行う（ステップＳ１０８）。   FIG. 4 is a schematic cross-sectional view of the semiconductor light emitting device. The light emitting element 36 is mounted on the mounting region 30c with the mounting material 35 such as Ag paste or metal solder, and is electrically connected to the lead 30b with the bonding wire 38 or the like (step S108).

続いて、発光素子３６、ボンディングワイヤ３８、を覆うように凹部４０内に液状の透明樹脂３４を注入し硬化させる（ステップＳ１１０）。透明樹脂３４としては、エポキシ樹脂、シリコーン樹脂などを用いる。   Subsequently, a liquid transparent resin 34 is injected into the recess 40 so as to cover the light emitting element 36 and the bonding wire 38, and is cured (step S110). As the transparent resin 34, an epoxy resin, a silicone resin, or the like is used.

続いて、リードフレーム８を分離し、リード３０ａ、３０ｂを所定の形状に切断し（ステップＳ１１２）、半導体発光装置の製造工程が終了する。   Subsequently, the lead frame 8 is separated, and the leads 30a and 30b are cut into a predetermined shape (step S112), and the manufacturing process of the semiconductor light emitting device is completed.

図５は半導体発光装置の変形例の模式断面図である。発光素子３６の発光波長より短いバンドギャップ波長を有する半導体基板を用いると、放射光は透過する。例えばバンドギャップ波長が約５５０ｎｍであるＧａＰ基板を用いるとこれより長い波長の光は透過し、図５において放射光は上方に向かう。発光素子３６の電極（図示せず）はボール状のバンプ５０によりリード３０ａ、３０ｂとそれぞれに接続される。バンプ５０には、例えば導電性ワイヤ（金材）やボール（半田材）を用いる。   FIG. 5 is a schematic cross-sectional view of a modification of the semiconductor light emitting device. When a semiconductor substrate having a band gap wavelength shorter than the emission wavelength of the light emitting element 36 is used, the emitted light is transmitted. For example, when a GaP substrate having a band gap wavelength of about 550 nm is used, light having a longer wavelength is transmitted, and the emitted light is directed upward in FIG. Electrodes (not shown) of the light emitting element 36 are connected to the leads 30a and 30b by ball-shaped bumps 50, respectively. For the bump 50, for example, a conductive wire (gold material) or a ball (solder material) is used.

バンプ５０をリード３０ａ及び３０ｂとそれぞれ接触させ、加圧、加熱、超音波印加などを用いたフリップチップボンディングによりマウント及びリードへの電気的接続が可能となる（図１におけるステップＳ１０８）。この場合、リードフラッシュ及びガスによる汚れが抑制されているのでバンプ５０及びリードフレーム３０間の接着が確実かつ容易に行える。   The bump 50 is brought into contact with the leads 30a and 30b, respectively, and electrical connection to the mount and the lead is enabled by flip-chip bonding using pressurization, heating, ultrasonic application, etc. (step S108 in FIG. 1). In this case, since the contamination by the lead flash and the gas is suppressed, the bonding between the bump 50 and the lead frame 30 can be reliably and easily performed.

本実施形態にかかる製造方法を用いた半導体発光装置は、発光素子３６がマウントされるリード３０ａの実装領域３０ｃは平滑であり樹脂バリが抑制されており、確実に発光素子３６がマウントされ、光の反射率が高い。さらに、リードフレーム３０の表面にＡｇメッキ層を設けると反射率を一層高めることができる。   In the semiconductor light emitting device using the manufacturing method according to the present embodiment, the mounting region 30c of the lead 30a on which the light emitting element 36 is mounted is smooth and the resin burr is suppressed, and the light emitting element 36 is securely mounted, High reflectivity. Furthermore, if an Ag plating layer is provided on the surface of the lead frame 30, the reflectance can be further increased.

凹部４０の内側壁は、フィルム材１２の転写により平滑な反射面３２ａであり、金属膜または反射フィラーを含む樹脂により高い反射率とできる。実装面３０ｃ及び凹部４０の内側壁である反射面３２ａにより発光素子３６からの放射光は上方から放射され、光取り出し効率を高めることができ、高い光出力を得ることが容易となる。この場合、透明樹脂３４に蛍光体を混合すると、発光素子の波長光及び蛍光体による波長変換光との混合色を得ることができる。   The inner wall of the recess 40 is a smooth reflecting surface 32a due to the transfer of the film material 12, and a higher reflectance can be achieved by a resin containing a metal film or a reflective filler. Radiation light from the light emitting element 36 is radiated from above by the mounting surface 30c and the reflection surface 32a which is the inner wall of the recess 40, so that the light extraction efficiency can be increased and high light output can be easily obtained. In this case, when the phosphor is mixed with the transparent resin 34, a mixed color of the wavelength light of the light emitting element and the wavelength converted light by the phosphor can be obtained.

次に、フィルム材を用いない比較例にかかる半導体発光装置の製造方法について説明する。比較例においては、金型精度及び部品精度が不十分であるために生じる空隙を、リードフレーム３０を押しつぶしながら成型することによりリードフラッシュを抑制していた。   Next, the manufacturing method of the semiconductor light-emitting device concerning the comparative example which does not use a film material is demonstrated. In the comparative example, the lead flash was suppressed by molding the gap generated due to insufficient mold accuracy and component accuracy while crushing the lead frame 30.

しかしながら無酸素銅などのリードフレーム３０は、フィルム材１２、１４と比べて柔軟性に欠け変形が小さい。このために細かな空隙を埋めるには不十分である。なお、樹脂成形後に、樹脂バリを噴射処理などにより除去することができる。しかし、リードフレーム３０の表面が荒れ、平滑性が失われ光反射率を低下させるので半導体発光装置としては好ましくない。   However, the lead frame 30 such as oxygen-free copper lacks flexibility and is less deformed than the film materials 12 and 14. For this reason, it is insufficient to fill a fine gap. In addition, after resin molding, the resin burr | flash can be removed by an injection process etc. However, the surface of the lead frame 30 is rough, the smoothness is lost, and the light reflectance is lowered, which is not preferable as a semiconductor light emitting device.

また、凹部４０の側壁である反射面３２ａの樹脂表面には金型８の表面状態が転写されるが、一般にこの平滑性は光の反射率において本実施形態より劣り高い光取り出し効率を得ることが困難である。また、加熱時のガス発生による汚れ膜がリードフレーム３０の表面に生じ、光反射率を低下させることがある。すなわち、比較例にかかる半導体装置の製造方法は、半導体発光装置には不十分である。   Further, the surface state of the mold 8 is transferred to the resin surface of the reflecting surface 32a which is the side wall of the recess 40. In general, this smoothness is inferior to that of the present embodiment in terms of light reflectance and obtains a higher light extraction efficiency. Is difficult. Further, a dirt film due to gas generation at the time of heating may occur on the surface of the lead frame 30 to reduce the light reflectance. That is, the method for manufacturing a semiconductor device according to the comparative example is insufficient for a semiconductor light emitting device.

これに対して、本実施形態にかかる半導体発光装置の製造方法は、金型８及びインサート部品であるリードフレーム８の間に柔軟性かつ展性に富み弾性変形が大きいフィルム材１２、１４を挟む。このために空隙を埋めリードフラッシュを抑制できる。また、リードフレーム表面を清浄に保ち発光素子３６のマウントを容易にし、光反射率を高めることができる。さらに、樹脂成型体３２の側壁を平滑にでき半導体発光素子３６からの放射光を効率よく上方へ反射できる。   On the other hand, in the manufacturing method of the semiconductor light emitting device according to the present embodiment, the film materials 12 and 14 that are flexible and malleable and have large elastic deformation are sandwiched between the mold 8 and the lead frame 8 that is an insert part. . For this reason, the gap can be filled and lead flash can be suppressed. Further, the lead frame surface can be kept clean, the light emitting element 36 can be easily mounted, and the light reflectance can be increased. Further, the side wall of the resin molded body 32 can be smoothed, and the emitted light from the semiconductor light emitting element 36 can be efficiently reflected upward.

以上、図面を参照しつつ本発明の実施形態について説明した。しかし、本発明はこれら実施形態には限定されない。すなわち、半導体発光装置及びその製造方法を構成するリードフレーム、発光素子、樹脂、フィルム材、金型の材質、サイズ、形状、配置、加熱温度などに関して当業者が設計変更を行ったものであっても本発明の主旨を逸脱しない限り本発明の範囲に包含される。   The embodiments of the present invention have been described above with reference to the drawings. However, the present invention is not limited to these embodiments. In other words, those skilled in the art have made design changes with regard to the lead frame, light emitting element, resin, film material, mold material, size, shape, arrangement, heating temperature, etc. constituting the semiconductor light emitting device and its manufacturing method. Are included in the scope of the present invention without departing from the gist of the present invention.

本発明の実施形態にかかる半導体発光装置の製造方法を表す工程断面図である。It is process sectional drawing showing the manufacturing method of the semiconductor light-emitting device concerning embodiment of this invention. 樹脂成形工程を表す模式図である。It is a schematic diagram showing a resin molding process. パッケージの模式斜視図である。It is a model perspective view of a package. 本実施形態による半導体発光装置の模式断面図である。1 is a schematic cross-sectional view of a semiconductor light emitting device according to an embodiment. 本実施形態による半導体発光装置の変形例の模式断面図である。It is a schematic cross section of a modification of the semiconductor light emitting device according to the present embodiment.

符号の説明Explanation of symbols

６ パッケージ、８ 金型、１０ 上金型、１２ フィルム材、１４ フィルム材、２０ 下金型、３０ リードフレーム、３０ｃ 実装領域、３２ 樹脂成型体 6 package, 8 mold, 10 upper mold, 12 film material, 14 film material, 20 lower mold, 30 lead frame, 30c mounting area, 32 resin molded body

Claims (4)

リードフレームと第１の金型との間に第１のフィルム材を介在させた状態で、前記第１の金型及び第２の金型により前記リードフレームをクランプする工程と、
発光素子の実装領域及び外部端子領域となる前記リードフレームの一部を前記第１のフィルム材と密着させた状態で前記第１のフィルム材と前記第２の金型との間に樹脂を注入し、前記実装領域を内部に含む凹部を有する樹脂成型体を形成する工程と、
前記実装領域に前記発光素子を配置する工程と、
を備えたことを特徴とする半導体発光装置の製造方法。 Clamping the lead frame with the first mold and the second mold with the first film material interposed between the lead frame and the first mold; and
A resin is injected between the first film material and the second mold in a state in which a part of the lead frame that becomes a light emitting element mounting region and an external terminal region is in close contact with the first film material. And forming a resin molded body having a recess including the mounting region therein,
Disposing the light emitting element in the mounting region;
A method for manufacturing a semiconductor light-emitting device. リードフレームと第１の金型との間に第１のフィルム材を介在させ、前記リードフレームと第２の金型との間に第２のフィルム材を介在させた状態で、前記第１及び第２の金型により前記リードフレームをクランプする工程と、
発光素子の実装領域及び外部端子領域となる前記リードフレームの一部を前記第１及び第２のフィルム材と密着させた状態で前記第１と第２のフィルム材との間に樹脂を注入し、前記実装領域を内部に含む凹部を有する樹脂成型体を形成する工程と、
前記実装領域に前記発光素子を配置する工程と、
を備えたことを特徴とする半導体発光装置の製造方法。 With the first film material interposed between the lead frame and the first mold, and with the second film material interposed between the lead frame and the second mold, the first and Clamping the lead frame with a second mold;
A resin is injected between the first and second film materials in a state in which a part of the lead frame that becomes a light emitting element mounting region and an external terminal region is in close contact with the first and second film materials. Forming a resin molded body having a recess including the mounting region therein;
Disposing the light emitting element in the mounting region;
A method for manufacturing a semiconductor light-emitting device. 前記フィルム材は、樹脂またはゴムを含むことを特徴とする請求項１または２に記載の半導体発光装置の製造方法。   The method of manufacturing a semiconductor light emitting device according to claim 1, wherein the film material includes resin or rubber. 前記凹部は、前記発光素子から光放射方向に向かって拡開するように形成されたことを特徴とする請求項１または２に記載の半導体発光装置の製造方法。   3. The method of manufacturing a semiconductor light emitting device according to claim 1, wherein the recess is formed so as to expand from the light emitting element toward a light emission direction.
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