CN102804439B - 可交联的电介质及其制备方法和用途 - Google Patents

可交联的电介质及其制备方法和用途 Download PDF

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Publication number
CN102804439B
CN102804439B CN201080032571.3A CN201080032571A CN102804439B CN 102804439 B CN102804439 B CN 102804439B CN 201080032571 A CN201080032571 A CN 201080032571A CN 102804439 B CN102804439 B CN 102804439B
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CN
China
Prior art keywords
electronic device
compound
dielectric
alkyl
gate
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201080032571.3A
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English (en)
Chinese (zh)
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CN102804439A (zh
Inventor
M·卡斯特勒
S·A·克勒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Feilisi Co Ltd
BASF SE
Original Assignee
POLYERA CORP
BASF SE
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Publication of CN102804439A publication Critical patent/CN102804439A/zh
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Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/14—Organic dielectrics
    • H01G4/18—Organic dielectrics of synthetic material, e.g. derivatives of cellulose
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Formation Of Insulating Films (AREA)
  • Organic Insulating Materials (AREA)
  • Paints Or Removers (AREA)
CN201080032571.3A 2009-05-25 2010-05-20 可交联的电介质及其制备方法和用途 Expired - Fee Related CN102804439B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP09160980.0 2009-05-25
EP09160980 2009-05-25
PCT/EP2010/056983 WO2010136385A1 (en) 2009-05-25 2010-05-20 Crosslinkable dielectrics and methods of preparation and use thereof

Publications (2)

Publication Number Publication Date
CN102804439A CN102804439A (zh) 2012-11-28
CN102804439B true CN102804439B (zh) 2015-05-27

Family

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Family Applications (1)

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CN201080032571.3A Expired - Fee Related CN102804439B (zh) 2009-05-25 2010-05-20 可交联的电介质及其制备方法和用途

Country Status (7)

Country Link
US (1) US8853820B2 (enExample)
EP (1) EP2436056B1 (enExample)
JP (1) JP5886189B2 (enExample)
KR (1) KR101702484B1 (enExample)
CN (1) CN102804439B (enExample)
TW (1) TWI527834B (enExample)
WO (1) WO2010136385A1 (enExample)

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DE102015119939A1 (de) 2015-11-18 2017-05-18 ALTANA Aktiengesellschaft Vernetzbare polymere Materialien für dielektrische Schichten in elektronischen Bauteilen
TWI764929B (zh) * 2016-09-27 2022-05-21 德商巴地斯顏料化工廠 具有經增強的可交聯性之星形及三嵌段聚合物
JP7046395B2 (ja) * 2018-03-07 2022-04-04 クラップ カンパニー リミテッド トップゲート・ボトムコンタクト有機電界効果トランジスタを製造するためのパターニング方法
US20200066457A1 (en) * 2018-08-24 2020-02-27 Apple Inc. Self-fused capacitor
KR102458414B1 (ko) * 2021-01-26 2022-10-25 한국화학연구원 절연성 수지 조성물, 이로부터 제조된 절연체 및 이를 포함하는 유기박막트랜지스터
CN113410384B (zh) * 2021-06-28 2023-04-07 西南大学 一种用于柔性场效应晶体管的聚合物介电层的制备方法
CN118234574A (zh) * 2021-08-30 2024-06-21 飞利斯有限公司 有色介电聚合物材料及使用它们的器件
CN113943436B (zh) * 2021-09-29 2023-06-02 郑州大学 一种可简便图案化的耐溶剂高介电常数绝缘层的制备方法

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Also Published As

Publication number Publication date
TWI527834B (zh) 2016-04-01
JP2012528476A (ja) 2012-11-12
KR101702484B1 (ko) 2017-02-06
WO2010136385A1 (en) 2010-12-02
EP2436056B1 (en) 2016-08-03
EP2436056A1 (en) 2012-04-04
KR20120059457A (ko) 2012-06-08
TW201105689A (en) 2011-02-16
CN102804439A (zh) 2012-11-28
US8853820B2 (en) 2014-10-07
JP5886189B2 (ja) 2016-03-16
US20120068314A1 (en) 2012-03-22

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Legal Events

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Effective date of registration: 20170619

Address after: Ludwigshafen, Germany

Co-patentee after: Feilisi Co. Ltd.

Patentee after: BASF SE

Address before: Ludwigshafen, Germany

Co-patentee before: Polyera Corp.

Patentee before: BASF SE

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150527

Termination date: 20190520