JP5886189B2 - 架橋可能な誘電体、並びにその製造方法及び使用方法 - Google Patents

架橋可能な誘電体、並びにその製造方法及び使用方法 Download PDF

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JP5886189B2
JP5886189B2 JP2012512314A JP2012512314A JP5886189B2 JP 5886189 B2 JP5886189 B2 JP 5886189B2 JP 2012512314 A JP2012512314 A JP 2012512314A JP 2012512314 A JP2012512314 A JP 2012512314A JP 5886189 B2 JP5886189 B2 JP 5886189B2
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electronic device
dielectric
group
compound
radically
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JP2012528476A (ja
JP2012528476A5 (enExample
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カストラー，マルセル
アニカ ケーラー，ズィルケ
アニカ ケーラー，ズィルケ
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BASF SE
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/14—Organic dielectrics
    • H01G4/18—Organic dielectrics of synthetic material, e.g. derivatives of cellulose
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Formation Of Insulating Films (AREA)
  • Organic Insulating Materials (AREA)
  • Paints Or Removers (AREA)
JP2012512314A 2009-05-25 2010-05-20 架橋可能な誘電体、並びにその製造方法及び使用方法 Expired - Fee Related JP5886189B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP09160980.0 2009-05-25
EP09160980 2009-05-25
PCT/EP2010/056983 WO2010136385A1 (en) 2009-05-25 2010-05-20 Crosslinkable dielectrics and methods of preparation and use thereof

Publications (3)

Publication Number Publication Date
JP2012528476A JP2012528476A (ja) 2012-11-12
JP2012528476A5 JP2012528476A5 (enExample) 2013-07-04
JP5886189B2 true JP5886189B2 (ja) 2016-03-16

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JP2012512314A Expired - Fee Related JP5886189B2 (ja) 2009-05-25 2010-05-20 架橋可能な誘電体、並びにその製造方法及び使用方法

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Country Link
US (1) US8853820B2 (enExample)
EP (1) EP2436056B1 (enExample)
JP (1) JP5886189B2 (enExample)
KR (1) KR101702484B1 (enExample)
CN (1) CN102804439B (enExample)
TW (1) TWI527834B (enExample)
WO (1) WO2010136385A1 (enExample)

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JP7046395B2 (ja) * 2018-03-07 2022-04-04 クラップ カンパニー リミテッド トップゲート・ボトムコンタクト有機電界効果トランジスタを製造するためのパターニング方法
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KR102458414B1 (ko) * 2021-01-26 2022-10-25 한국화학연구원 절연성 수지 조성물, 이로부터 제조된 절연체 및 이를 포함하는 유기박막트랜지스터
CN113410384B (zh) * 2021-06-28 2023-04-07 西南大学 一种用于柔性场效应晶体管的聚合物介电层的制备方法
CN118234574A (zh) * 2021-08-30 2024-06-21 飞利斯有限公司 有色介电聚合物材料及使用它们的器件
CN113943436B (zh) * 2021-09-29 2023-06-02 郑州大学 一种可简便图案化的耐溶剂高介电常数绝缘层的制备方法

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Also Published As

Publication number Publication date
TWI527834B (zh) 2016-04-01
JP2012528476A (ja) 2012-11-12
KR101702484B1 (ko) 2017-02-06
WO2010136385A1 (en) 2010-12-02
EP2436056B1 (en) 2016-08-03
EP2436056A1 (en) 2012-04-04
KR20120059457A (ko) 2012-06-08
TW201105689A (en) 2011-02-16
CN102804439A (zh) 2012-11-28
CN102804439B (zh) 2015-05-27
US8853820B2 (en) 2014-10-07
US20120068314A1 (en) 2012-03-22

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