KR101702484B1 - 가교결합성 유전체 및 이의 제조 방법 및 용도 - Google Patents

가교결합성 유전체 및 이의 제조 방법 및 용도 Download PDF

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KR101702484B1
KR101702484B1 KR1020117030258A KR20117030258A KR101702484B1 KR 101702484 B1 KR101702484 B1 KR 101702484B1 KR 1020117030258 A KR1020117030258 A KR 1020117030258A KR 20117030258 A KR20117030258 A KR 20117030258A KR 101702484 B1 KR101702484 B1 KR 101702484B1
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electronic device
dielectric
compound
alkyl
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KR20120059457A (ko
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마르셀 카스틀러
질케 아니카 쾰러
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바스프 에스이
폴리에라 코퍼레이션
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/468Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/018Dielectrics
    • H01G4/06Solid dielectrics
    • H01G4/14Organic dielectrics
    • H01G4/18Organic dielectrics of synthetic material, e.g. derivatives of cellulose
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/33Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49894Materials of the insulating layers or coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/466Lateral bottom-gate IGFETs comprising only a single gate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/151Copolymers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10Transparent electrodes, e.g. using graphene
    • H10K2102/101Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Formation Of Insulating Films (AREA)
  • Organic Insulating Materials (AREA)
  • Paints Or Removers (AREA)
KR1020117030258A 2009-05-25 2010-05-20 가교결합성 유전체 및 이의 제조 방법 및 용도 Expired - Fee Related KR101702484B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP09160980 2009-05-25
EP09160980.0 2009-05-25
PCT/EP2010/056983 WO2010136385A1 (en) 2009-05-25 2010-05-20 Crosslinkable dielectrics and methods of preparation and use thereof

Publications (2)

Publication Number Publication Date
KR20120059457A KR20120059457A (ko) 2012-06-08
KR101702484B1 true KR101702484B1 (ko) 2017-02-06

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Country Link
US (1) US8853820B2 (enExample)
EP (1) EP2436056B1 (enExample)
JP (1) JP5886189B2 (enExample)
KR (1) KR101702484B1 (enExample)
CN (1) CN102804439B (enExample)
TW (1) TWI527834B (enExample)
WO (1) WO2010136385A1 (enExample)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
KR20220107721A (ko) * 2021-01-26 2022-08-02 한국화학연구원 절연성 수지 조성물, 이로부터 제조된 절연체 및 이를 포함하는 유기박막트랜지스터

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US8901544B2 (en) * 2011-12-06 2014-12-02 Corning Incorporated Organic thin film transistor with ion exchanged glass substrate
US9171961B2 (en) 2012-07-11 2015-10-27 Polyera Corporation Coating materials for oxide thin film transistors
JP2016506625A (ja) * 2012-12-18 2016-03-03 メルク パテント ゲーエムベーハー 縮合環系を有する発光体
US9035287B2 (en) * 2013-02-01 2015-05-19 Polyera Corporation Polymeric materials for use in metal-oxide-semiconductor field-effect transistors
CN106031308B (zh) 2013-12-24 2019-08-09 飞利斯有限公司 用于附接式二维挠性电子装置的支撑结构
US10261634B2 (en) 2014-03-27 2019-04-16 Flexterra, Inc. Infrared touch system for flexible displays
WO2015183567A1 (en) 2014-05-28 2015-12-03 Polyera Corporation Low power display updates
DE102014215108A1 (de) * 2014-07-31 2016-02-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Elektronisches Bauteil, Verwendung eines Polymerisats sowie Polymerisat
EP3070741B1 (en) * 2015-03-18 2020-07-29 Emberion Oy An apparatus comprising a sensor arrangemenet and associated fabrication method
US10254795B2 (en) 2015-05-06 2019-04-09 Flexterra, Inc. Attachable, flexible display device with flexible tail
DE102015119939A1 (de) 2015-11-18 2017-05-18 ALTANA Aktiengesellschaft Vernetzbare polymere Materialien für dielektrische Schichten in elektronischen Bauteilen
WO2018060016A1 (en) * 2016-09-27 2018-04-05 Basf Se Star-shaped and triblock polymers with enhanced crosslinkability
CN112119515A (zh) * 2018-03-07 2020-12-22 Clap有限公司 用于制造顶栅底接触有机场效应晶体管的图案化方法
US20200066457A1 (en) * 2018-08-24 2020-02-27 Apple Inc. Self-fused capacitor
CN109216549A (zh) * 2018-09-14 2019-01-15 宁波石墨烯创新中心有限公司 一种有机薄膜晶体管及其制备方法
CN113410384B (zh) * 2021-06-28 2023-04-07 西南大学 一种用于柔性场效应晶体管的聚合物介电层的制备方法
US20250250394A1 (en) * 2021-08-30 2025-08-07 Flexterra, Inc. Dielectric polymer materials with coloration and devices using them
CN113943436B (zh) * 2021-09-29 2023-06-02 郑州大学 一种可简便图案化的耐溶剂高介电常数绝缘层的制备方法

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
KR20220107721A (ko) * 2021-01-26 2022-08-02 한국화학연구원 절연성 수지 조성물, 이로부터 제조된 절연체 및 이를 포함하는 유기박막트랜지스터
KR102458414B1 (ko) 2021-01-26 2022-10-25 한국화학연구원 절연성 수지 조성물, 이로부터 제조된 절연체 및 이를 포함하는 유기박막트랜지스터

Also Published As

Publication number Publication date
CN102804439A (zh) 2012-11-28
US20120068314A1 (en) 2012-03-22
EP2436056B1 (en) 2016-08-03
CN102804439B (zh) 2015-05-27
EP2436056A1 (en) 2012-04-04
JP5886189B2 (ja) 2016-03-16
JP2012528476A (ja) 2012-11-12
US8853820B2 (en) 2014-10-07
TW201105689A (en) 2011-02-16
KR20120059457A (ko) 2012-06-08
TWI527834B (zh) 2016-04-01
WO2010136385A1 (en) 2010-12-02

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