JP2006028497A - 有機絶縁膜組成物およびこれを用いた有機絶縁膜のパターン形成方法および有機薄膜トランジスタおよびこれを含む表示素子 - Google Patents
有機絶縁膜組成物およびこれを用いた有機絶縁膜のパターン形成方法および有機薄膜トランジスタおよびこれを含む表示素子 Download PDFInfo
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- JP2006028497A JP2006028497A JP2005179808A JP2005179808A JP2006028497A JP 2006028497 A JP2006028497 A JP 2006028497A JP 2005179808 A JP2005179808 A JP 2005179808A JP 2005179808 A JP2005179808 A JP 2005179808A JP 2006028497 A JP2006028497 A JP 2006028497A
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- Prior art keywords
- insulating film
- organic
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- organic insulating
- forming
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- 238000000034 method Methods 0.000 title claims abstract description 54
- 239000000203 mixture Substances 0.000 title claims abstract description 46
- 239000010409 thin film Substances 0.000 title claims abstract description 43
- 239000003999 initiator Substances 0.000 claims abstract description 18
- 229920000592 inorganic polymer Polymers 0.000 claims abstract description 14
- 239000002253 acid Substances 0.000 claims abstract description 11
- 150000001875 compounds Chemical class 0.000 claims abstract description 10
- 125000003700 epoxy group Chemical group 0.000 claims abstract 2
- -1 imide sulfonate Chemical class 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 20
- 239000000178 monomer Substances 0.000 claims description 16
- 125000000524 functional group Chemical group 0.000 claims description 15
- 239000000126 substance Substances 0.000 claims description 15
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- 239000004065 semiconductor Substances 0.000 claims description 11
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 claims description 10
- 229920001665 Poly-4-vinylphenol Polymers 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 150000003254 radicals Chemical class 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 6
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- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 6
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- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 claims description 6
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 claims description 6
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- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 claims description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 4
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- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical class I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims description 4
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- 239000010703 silicon Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000004342 Benzoyl peroxide Substances 0.000 claims description 3
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical group C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 3
- 244000028419 Styrax benzoin Species 0.000 claims description 3
- 235000000126 Styrax benzoin Nutrition 0.000 claims description 3
- 235000008411 Sumatra benzointree Nutrition 0.000 claims description 3
- 229960002130 benzoin Drugs 0.000 claims description 3
- 235000019400 benzoyl peroxide Nutrition 0.000 claims description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 3
- 235000019382 gum benzoic Nutrition 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
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- 239000011733 molybdenum Substances 0.000 claims description 3
- IZJVVXCHJIQVOL-UHFFFAOYSA-N nitro(phenyl)methanesulfonic acid Chemical compound OS(=O)(=O)C([N+]([O-])=O)C1=CC=CC=C1 IZJVVXCHJIQVOL-UHFFFAOYSA-N 0.000 claims description 3
- 229920000636 poly(norbornene) polymer Polymers 0.000 claims description 3
- DTGKSKDOIYIVQL-WEDXCCLWSA-N (+)-borneol Chemical group C1C[C@@]2(C)[C@@H](O)C[C@@H]1C2(C)C DTGKSKDOIYIVQL-WEDXCCLWSA-N 0.000 claims description 2
- MSAHTMIQULFMRG-UHFFFAOYSA-N 1,2-diphenyl-2-propan-2-yloxyethanone Chemical compound C=1C=CC=CC=1C(OC(C)C)C(=O)C1=CC=CC=C1 MSAHTMIQULFMRG-UHFFFAOYSA-N 0.000 claims description 2
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 claims description 2
- RNIPJYFZGXJSDD-UHFFFAOYSA-N 2,4,5-triphenyl-1h-imidazole Chemical compound C1=CC=CC=C1C1=NC(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)N1 RNIPJYFZGXJSDD-UHFFFAOYSA-N 0.000 claims description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 2
- KMNCBSZOIQAUFX-UHFFFAOYSA-N 2-ethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)C(=O)C1=CC=CC=C1 KMNCBSZOIQAUFX-UHFFFAOYSA-N 0.000 claims description 2
- ZACVGCNKGYYQHA-UHFFFAOYSA-N 2-ethylhexoxycarbonyloxy 2-ethylhexyl carbonate Chemical compound CCCCC(CC)COC(=O)OOC(=O)OCC(CC)CCCC ZACVGCNKGYYQHA-UHFFFAOYSA-N 0.000 claims description 2
- BQZJOQXSCSZQPS-UHFFFAOYSA-N 2-methoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OC)C(=O)C1=CC=CC=C1 BQZJOQXSCSZQPS-UHFFFAOYSA-N 0.000 claims description 2
- RPBWMJBZQXCSFW-UHFFFAOYSA-N 2-methylpropanoyl 2-methylpropaneperoxoate Chemical compound CC(C)C(=O)OOC(=O)C(C)C RPBWMJBZQXCSFW-UHFFFAOYSA-N 0.000 claims description 2
- XFOHWECQTFIEIX-UHFFFAOYSA-N 2-nitrofluorene Chemical compound C1=CC=C2C3=CC=C([N+](=O)[O-])C=C3CC2=C1 XFOHWECQTFIEIX-UHFFFAOYSA-N 0.000 claims description 2
- GUUVPOWQJOLRAS-UHFFFAOYSA-N Diphenyl disulfide Chemical compound C=1C=CC=CC=1SSC1=CC=CC=C1 GUUVPOWQJOLRAS-UHFFFAOYSA-N 0.000 claims description 2
- YIVJZNGAASQVEM-UHFFFAOYSA-N Lauroyl peroxide Chemical compound CCCCCCCCCCCC(=O)OOC(=O)CCCCCCCCCCC YIVJZNGAASQVEM-UHFFFAOYSA-N 0.000 claims description 2
- XOBKSJJDNFUZPF-UHFFFAOYSA-N Methoxyethane Chemical group CCOC XOBKSJJDNFUZPF-UHFFFAOYSA-N 0.000 claims description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 2
- 239000002202 Polyethylene glycol Substances 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 150000001298 alcohols Chemical class 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 claims description 2
- 150000004056 anthraquinones Chemical class 0.000 claims description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 claims description 2
- 239000012965 benzophenone Substances 0.000 claims description 2
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- 229920001577 copolymer Polymers 0.000 claims description 2
- XJOBOFWTZOKMOH-UHFFFAOYSA-N decanoyl decaneperoxoate Chemical compound CCCCCCCCCC(=O)OOC(=O)CCCCCCCCC XJOBOFWTZOKMOH-UHFFFAOYSA-N 0.000 claims description 2
- 125000004342 dicyclopropylmethyl group Chemical group [H]C1([H])C([H])([H])C1([H])C([H])(*)C1([H])C([H])([H])C1([H])[H] 0.000 claims description 2
- 238000003618 dip coating Methods 0.000 claims description 2
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
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- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 238000007641 inkjet printing Methods 0.000 claims description 2
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 claims description 2
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 claims description 2
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- 230000015572 biosynthetic process Effects 0.000 description 2
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
【解決手段】特定の構造を有するエポキシ基含有化合物又は特定の構造を有するラジカル重合可能化合物と、光によって酸又はラジカルを発生させる開始剤と、有機高分子又は無機高分子とを含む有機絶縁膜組成物を用いる。
【選択図】なし
Description
れる群から選択される少なくとも一つのエポキシド基含有化合物、または下記化学式4で表わされる群から選択される少なくとも一つのラジカル重合可能化合物を含む官能基を持つ単量体と、(2)光によって酸またはラジカルを発生させる開始剤と、(3)有機高分
子または無機高分子とを含む、有機絶縁膜組成物が提供される。
また、本発明の別の観点によれば、前記パターン形成された有機絶縁膜を含む有機薄膜トランジスタが提供される。
本発明の有機絶縁膜組成物に使用される官能基を持つ単量体(functional group containing monomer)は、下記化学式5で表わされる群から選択される少なくとも一つのエポキシド基含有化合物または下記化学式6で表わされる群から選択される少なくとも一つのラジカル重合可能化合物である。
図2は従来の一般的なフォトリソグラフィ法による有機絶縁膜パターン形成段階を説明する工程概略図である。
図1、図2を使ってこの工程を段階的に説明すると、まず、洗浄された基板上に電極を形成し(S1、(a))、その上に有機絶縁膜をコートする(S2、(b))。次に、有機絶縁膜上にフォトレジストをコートし(S3、(c))、フォトマスクを用いた露光工程によって(S4、(d))、パターンが形成されるべき領域を露出させる現像(develop)工程を行う(S5、(e))。パターン形成されたフォトレジストをシャドーマスクとして下部膜の有機絶縁膜をドライエッチングまたはウェットエッチング(S6、(f))した後、フォトレジストストリッパーによってフォトレジストを除去することにより(S7、(g))、最終的に有機絶縁膜のパターン形成を完了する。
図4は本発明の方法によって有機絶縁膜パターン形成工程を説明する工程概略図である。
図3、図4を使って説明すると、すなわち、本発明は、1)基板上に電極を形成する段
階(S11、(h))と、2)その上に本発明の有機絶縁膜組成物を用いて有機絶縁膜を
コートする段階(S12、(i))と、3)所望のパターンのフォトマスクを用いて露光
(S13、(j))した後、有機現像液で現像させてパターン形成する段階(S14、(k))とを含む。
第(1)段階:電極形成段階
通常の方法によって基板を洗浄して不純物を除去し、蒸着(deposition)、パターニング(patterning)またはプリンティング(printing)によって電極を形成する(S11、(h))。
基板上に電極が形成されると、本発明の有機絶縁膜組成物を用いて有機絶縁膜をコートする(S12、(i))。前記組成物は、適切な溶媒に溶かして2000Å〜20000Åの厚さにコートし、80℃〜150℃で10秒〜30分、好ましくは100℃で5分間ソフトベーキングを行う。
有機絶縁膜がコートされると、所望の形状のフォトマスクを用いてUV光に露光させ(S13、(j))、前記露光したフィルムを有機現像液で現像することにより(S14、(k))、前記フィルムの非露光部を除去してパターンを形成する。
図5を参照すると、基板1上にゲート電極4を形成し、前記ゲート電極4上に、光パターン形成可能な本発明の有機絶縁膜2を積層した後、その上にソース/ドレイン電極5、6を形成し、前記ソース/ドレイン電極5、6の上に有機半導体層3を形成する。本発明によって製造された有機薄膜トランジスタは、必ずしも前記の構造に限定されるのではなく、例えばゲート電極4、有機絶縁膜2、有機半導体層3およびソース/ドレイン電極5、6の上下位置がお互い変わることもできる。
製造例1:官能基としてエポキシド基含有単量体を用いた有機絶縁膜組成物の製造
トリメチロールプロパントリグリシジルエーテル(Aldrich社)2.0g、トリフェニルスルホニウムトリフラート(Aldrich社)0.02g、ベンゾイルペルオキシド(Aldrich社)0.02g、およびポリビニルフェノール(Aldrich社、重量平均分子量8,000)2.0gをシクロヘキサノン18mLに溶解させて有機絶縁膜組成物を製造した。
トリメチロールプロパントリメタクリレート(Aldrich社)1.0g、トリフェニルスルホニウムトリフラート(Aldrich社)0.01g、ベンゾイルペルオキシド(Aldrich社)0.01g、およびポリビニルフェノール(Aldrich社、重量平均分子量8,000)3.0gをシクロヘキサノン27mLに溶解させて有機絶縁膜組成物を製造した。
ある官能基を持つ単量体と開始剤を含んでいないまま、ポリビニルフェノール(Aldrich社、重量平均分子量8,000)3.0gのみをシクロヘキサノン27mLに溶解させて有機絶縁膜組成物を製造した。
(1)有機絶縁膜のパターン形成
ガラス基板1上に、前記製造例1で収得した有機絶縁膜組成物をスピンコーティング法を用いて2000rpmで8000Åの厚さにコートした後、100℃で5分間ソフトベーキングを行った。次に、所望の形状のフォトマスクを介してUV露光器で照射(100mJ/cm2)し、100℃で10分間ハードベーキングを行った。その後、1−メチル−2−ピロリジノンを有機現像液として用いて非露光部を除去することにより、図6に示すように、有機絶縁膜2をパターン形成した。
ガラス基板1にモリブデン(Mo)を用いて厚さ800Åのゲート電極4を形成し、その上に前記実施例1のパターン形成方法で駆動回路連結のための電極上の有機絶縁膜2をパターン形成した。
(1)有機絶縁膜のパターン形成
製造例2の有機絶縁膜組成物を使用した以外は、実施例1と同様の方法で有機絶縁膜2をパターン形成した。
前記実施例2のパターン形成方法を使用した以外は、実施例1と同様の方法で有機薄膜トランジスタを製作した。
(1)有機絶縁膜のパターン形成
比較製造例の有機絶縁膜組成物を用いて前記実施例1と同一のパターン形成方法でパターン形成工程を行ったが、有機現像液に非選択的に有機絶縁膜2が現像されて結局パターンが形成されなかった。
駆動回路連結のための電極上の有機絶縁膜パターン形成のために通常のフォトリソグラフィ工程によるパターン形成方法を使用した以外は、実施例1と同一の方法で有機薄膜トランジスタを製作した。
2 有機絶縁膜
3 有機半導体層
4 ゲート電極
5 ソース電極
6 ドレイン電極
Claims (17)
- 前記酸を発生させる開始剤が、スルホニウム塩系、ヨードニウム塩系物質などのイオン性光酸発生剤、ニトロベンジルスルホネート類、イミドスルホネート類、アゾナフトキノン類物質などの非イオン性光酸発生剤、および主鎖または側鎖にスルホニウム塩またはヨードニウム塩を有しあるいは側鎖に有機光酸発生基を有する重量平均分子量500〜100,000の高分子型の光酸発生剤よりなる群から選択されることを特徴とする請求項1に記載の有機絶縁膜組成物。
- 前記ラジカルを発生させる開始剤が、ベンゾイルペルオキシド、ラウロイルペルオキシド、t−ブチルヒドロペルオキシド、アセチルシクロヘキサンスルホニルペルオキシド、イソブチロイルペルオキシド、ジ(2−エチルヘキシル)ペルオキシジカルボキシレート、ジイソプロピルペルオキシジカルボキシレート、t−ブチルペルオキシピバレート、デカノイルペルオキシド、アゾビス(2−メチルプロピオニトリル)である有機ペルオキシド類、アゾ類、アルファヒドロキシルケトン類、アルファアミノケノン類、ベンジルジメチルケタール類、ベンゾイン、ベンゾインメチルエーテル、ベンゾインエチルエーテル、ベンゾインエンプロピルエーテル、ベンゾインイソプロピルエーテル、ベンゾインエンブチルエーテル、ベンゾフェノン、パラメチルベンゾフェノン、アセトフェノン、アントラキノン、フェニルジスルフィドまたは2−ニトロフルオレンであることを特徴とする請求項1に記載の有機絶縁膜組成物。
- 前記有機高分子または無機高分子が、分子量1000〜1,000,000の高分子であって、ポリビニルフェノールまたはポリビニルフェノール誘導体、ポリビニルアルコールまたはポリビニルアルコール誘導体、ポリアクリルまたはポリアクリル誘導体、ポリノルボルネンまたはポリノルボルネン誘導体、ポリエチレングリコール誘導体、ポリプロピレングリコール誘導体、ポリシロキサン誘導体、セルロース誘導体またはこれらを含む共重合体よりなる群から選択されることを特徴とする請求項1に記載の有機絶縁膜組成物。
- 前記有機高分子または無機高分子が、主鎖または側鎖の各末端にヒドロキシル基またはカルボキシル基などの極性基を含むことを特徴とする請求項1から請求項4に記載の有機絶縁膜組成物。
- 前記有機高分子または無機高分子が、t−ブチル基、イソボニル基、メンチル基、2−メチル−2−アダマンタニル基、2−エチル−2−アダマンタニル基、テトラシクロデカニル基、テトラヒドロピラノイル基、3−オキソシクロヘキサノイル基、メバロニックラクトニル基、ジシクロプロピルメチル基、メチルシクロプロピルメチル基、メチルエチルエーテル基よりなる群から選択される酸に不安定な保護基で保護されることを特徴とする請求項1から請求項4に記載の有機絶縁膜組成物。
- 前記単量体と前記開始剤と前記有機高分子または無機高分子との重量比が100:0.1〜10:1〜10,000であることを特徴とする請求項1に記載の有機絶縁膜組成物。
- 1〜80%のシクロヘキサノン、クロロホルム、クロロベンゼン、エチレングリコールモノメチルエーテル、プロピレングリコールメチルエーテルアセテート、エチルラクテート、トルエン、キシレン、メチルエチルケトン、4−ヘプタノン、メタノール、ブタノール、アセトン、N−メチルホルムアミド、N−メチルピロリドン、トリフェニルイミダゾール、メシチレン、テトラリン、デカリン等よりなる群から選択される溶媒を含むことを特徴とする請求項1に記載の有機絶縁膜組成物。
- 基板上に電極を形成する電極形成工程と、
前記電極上に請求項1から請求項8の何れか1項に記載の有機絶縁膜組成物をコートする有機絶縁膜のコーティング工程と、
所望のパターンのフォトマスクを介して露光する露光工程と、
有機現像液で現像してパターンを形成するパターン形成工程と、
を含むことを特徴とする有機絶縁膜のパターン形成方法。 - 前記有機絶縁膜のコーティング工程が、スピンコーティング、スピンキャスティング、ディップコーティング、スプレーコーティング、ロールコーティングまたはインクジェットプリンティングであることを特徴とする請求項9に記載の有機絶縁膜のパターン形成方法。
- 前記露光工程は、UV露光器を用いて1〜400mJ/cm2の露光量でコートされた有機絶縁膜の表面に照射し、80℃〜150℃で1分〜120分間ハードベーキングすることを特徴とする請求項9に記載の有機絶縁膜のパターン形成方法。
- 請求項9の方法によってパターン形成された有機絶縁膜。
- 基板、ゲート電極、有機絶縁膜、有機半導体層およびソース/ドレイン電極を含む有機薄膜トランジスタにおいて、
前記有機絶縁膜が請求項9の方法によってパターン形成された有機絶縁膜であることを特徴とする有機薄膜トランジスタ。 - 前記有機半導体層が、ペンタセン、銅フタロシアニン、ポリチオフェン、ポリアニリン、ポリアセチレン、ポリピロール、ポリフェニレンビニレンまたはこれらの誘導体よりなる群から選択されることを特徴とする請求項13に記載の有機薄膜トランジスタ。
- 前記ゲート電極、ソース電極およびドレイン電極が、金(Au)、銀(Ag)、アルミニウム(Al)、ニッケル(Ni)、モリブデン(Mo)、タングステン(W)、インジウムスズ酸化物(ITO)、ポリチオフェン(polythiophene)、ポリアニリン(polyaniline)、ポリアセチレン(polyacetylene)、ポリピロール(polypyrrole)、ポリフェニレンビニレン(polyphenylene vinylene)またはPEDOT(Polyethylenedioxythiophene)/PSS(Polystyrenesulfonat)であることを特徴とする請求項13に記載の有機薄膜トランジスタ。
- 前記基板が、ガラス、シリコンまたはプラスチックであることを特徴とする請求項13に記載の有機薄膜トランジスタ。
- 請求項13の有機薄膜トランジスタを含む表示素子。
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