TWI527834B - 可交聯介電質及其製備方法與用途 - Google Patents
可交聯介電質及其製備方法與用途 Download PDFInfo
- Publication number
- TWI527834B TWI527834B TW099116713A TW99116713A TWI527834B TW I527834 B TWI527834 B TW I527834B TW 099116713 A TW099116713 A TW 099116713A TW 99116713 A TW99116713 A TW 99116713A TW I527834 B TWI527834 B TW I527834B
- Authority
- TW
- Taiwan
- Prior art keywords
- group
- electronic device
- dielectric
- alkyl
- compound
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/14—Organic dielectrics
- H01G4/18—Organic dielectrics of synthetic material, e.g. derivatives of cellulose
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49894—Materials of the insulating layers or coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/151—Copolymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Thin Film Transistor (AREA)
- Macromonomer-Based Addition Polymer (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Formation Of Insulating Films (AREA)
- Organic Insulating Materials (AREA)
- Paints Or Removers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP09160980 | 2009-05-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201105689A TW201105689A (en) | 2011-02-16 |
| TWI527834B true TWI527834B (zh) | 2016-04-01 |
Family
ID=42341621
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099116713A TWI527834B (zh) | 2009-05-25 | 2010-05-25 | 可交聯介電質及其製備方法與用途 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8853820B2 (enExample) |
| EP (1) | EP2436056B1 (enExample) |
| JP (1) | JP5886189B2 (enExample) |
| KR (1) | KR101702484B1 (enExample) |
| CN (1) | CN102804439B (enExample) |
| TW (1) | TWI527834B (enExample) |
| WO (1) | WO2010136385A1 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012195580A (ja) * | 2011-03-03 | 2012-10-11 | Mitsubishi Chemicals Corp | 電界効果トランジスタのゲート絶縁層用組成物、ゲート絶縁層、電界効果トランジスタ及び表示パネル |
| US8901544B2 (en) * | 2011-12-06 | 2014-12-02 | Corning Incorporated | Organic thin film transistor with ion exchanged glass substrate |
| US9171961B2 (en) | 2012-07-11 | 2015-10-27 | Polyera Corporation | Coating materials for oxide thin film transistors |
| JP2016506625A (ja) * | 2012-12-18 | 2016-03-03 | メルク パテント ゲーエムベーハー | 縮合環系を有する発光体 |
| US9035287B2 (en) * | 2013-02-01 | 2015-05-19 | Polyera Corporation | Polymeric materials for use in metal-oxide-semiconductor field-effect transistors |
| CN106031308B (zh) | 2013-12-24 | 2019-08-09 | 飞利斯有限公司 | 用于附接式二维挠性电子装置的支撑结构 |
| US10261634B2 (en) | 2014-03-27 | 2019-04-16 | Flexterra, Inc. | Infrared touch system for flexible displays |
| WO2015183567A1 (en) | 2014-05-28 | 2015-12-03 | Polyera Corporation | Low power display updates |
| DE102014215108A1 (de) * | 2014-07-31 | 2016-02-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Elektronisches Bauteil, Verwendung eines Polymerisats sowie Polymerisat |
| EP3070741B1 (en) * | 2015-03-18 | 2020-07-29 | Emberion Oy | An apparatus comprising a sensor arrangemenet and associated fabrication method |
| US10254795B2 (en) | 2015-05-06 | 2019-04-09 | Flexterra, Inc. | Attachable, flexible display device with flexible tail |
| DE102015119939A1 (de) | 2015-11-18 | 2017-05-18 | ALTANA Aktiengesellschaft | Vernetzbare polymere Materialien für dielektrische Schichten in elektronischen Bauteilen |
| WO2018060016A1 (en) * | 2016-09-27 | 2018-04-05 | Basf Se | Star-shaped and triblock polymers with enhanced crosslinkability |
| CN112119515A (zh) * | 2018-03-07 | 2020-12-22 | Clap有限公司 | 用于制造顶栅底接触有机场效应晶体管的图案化方法 |
| US20200066457A1 (en) * | 2018-08-24 | 2020-02-27 | Apple Inc. | Self-fused capacitor |
| CN109216549A (zh) * | 2018-09-14 | 2019-01-15 | 宁波石墨烯创新中心有限公司 | 一种有机薄膜晶体管及其制备方法 |
| KR102458414B1 (ko) * | 2021-01-26 | 2022-10-25 | 한국화학연구원 | 절연성 수지 조성물, 이로부터 제조된 절연체 및 이를 포함하는 유기박막트랜지스터 |
| CN113410384B (zh) * | 2021-06-28 | 2023-04-07 | 西南大学 | 一种用于柔性场效应晶体管的聚合物介电层的制备方法 |
| US20250250394A1 (en) * | 2021-08-30 | 2025-08-07 | Flexterra, Inc. | Dielectric polymer materials with coloration and devices using them |
| CN113943436B (zh) * | 2021-09-29 | 2023-06-02 | 郑州大学 | 一种可简便图案化的耐溶剂高介电常数绝缘层的制备方法 |
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| US4586111A (en) | 1984-08-01 | 1986-04-29 | Sfe Technologies | Capacitor with dielectric comprising a polymer of polyacrylate polyether pre-polymer |
| EP0250631A1 (en) | 1986-07-02 | 1988-01-07 | DeSOTO, INC. | Ultraviolet curable buffer coatings for optical fiber |
| US5126915A (en) | 1989-07-28 | 1992-06-30 | E. I. Du Pont De Nemours And Company | Metal oxide-coated electrically conductive powders and compositions thereof |
| US5358775A (en) | 1993-07-29 | 1994-10-25 | Rogers Corporation | Fluoropolymeric electrical substrate material exhibiting low thermal coefficient of dielectric constant |
| EP0996313A3 (en) | 1995-07-14 | 2000-08-02 | Matsushita Electric Industrial Co., Ltd. | Illuminated switch unit |
| DE69832444T2 (de) | 1997-09-11 | 2006-08-03 | E.I. Dupont De Nemours And Co., Wilmington | Flexible Polyimidfolie mit hoher dielektrischer Konstante |
| US6274224B1 (en) | 1999-02-01 | 2001-08-14 | 3M Innovative Properties Company | Passive electrical article, circuit articles thereof, and circuit articles comprising a passive electrical article |
| US6586791B1 (en) | 2000-07-19 | 2003-07-01 | 3M Innovative Properties Company | Transistor insulator layer incorporating superfine ceramic particles |
| US6585914B2 (en) | 2000-07-24 | 2003-07-01 | Northwestern University | N-type thiophene semiconductors |
| WO2002009201A1 (en) | 2000-07-24 | 2002-01-31 | Northwestern University | n-TYPE THIOPHENE SEMICONDUCTORS |
| CA2469912A1 (en) | 2001-12-19 | 2003-06-26 | Avecia Limited | Organic field effect transistor with an organic dielectric |
| US7098525B2 (en) | 2003-05-08 | 2006-08-29 | 3M Innovative Properties Company | Organic polymers, electronic devices, and methods |
| US7279777B2 (en) | 2003-05-08 | 2007-10-09 | 3M Innovative Properties Company | Organic polymers, laminates, and capacitors |
| US7049629B2 (en) * | 2003-08-22 | 2006-05-23 | Xerox Corporation | Semiconductor polymers and devices thereof |
| WO2005076815A2 (en) | 2004-01-26 | 2005-08-25 | Northwestern University | PERYLENE n-TYPE SEMICONDUCTORS AND RELATED DEVICES |
| JP5108210B2 (ja) * | 2004-06-21 | 2012-12-26 | 三星電子株式会社 | 有機絶縁膜組成物およびこれを用いた有機絶縁膜のパターン形成方法および有機薄膜トランジスタおよびこれを含む表示素子 |
| KR101001441B1 (ko) | 2004-08-17 | 2010-12-14 | 삼성전자주식회사 | 유무기 금속 하이브리드 물질 및 이를 포함하는 유기절연체 조성물 |
| KR20070106976A (ko) | 2004-09-14 | 2007-11-06 | 노오쓰웨스턴 유니버시티 | 카르보닐-관능화 티오펜 화합물 및 관련 장치 구조물 |
| JP2006140400A (ja) * | 2004-11-15 | 2006-06-01 | Kyocera Corp | セラミック多層基板及びその製造方法 |
| US20070075308A1 (en) | 2005-09-30 | 2007-04-05 | Florian Dotz | Active semiconductor devices |
| KR100793610B1 (ko) * | 2005-10-05 | 2008-01-10 | 엘지전자 주식회사 | 플라즈마 디스플레이 패널의 격벽 제조방법 및 이를 이용한플라즈마 디스플레이 패널 |
| WO2007086237A1 (en) | 2006-01-24 | 2007-08-02 | Ricoh Company, Ltd. | Electronic element, current control device, arithmetic device, and display device |
| KR101313538B1 (ko) * | 2006-04-06 | 2013-10-01 | 주식회사 동진쎄미켐 | 네가티브 감광성 수지 조성물 |
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| US7569693B2 (en) | 2006-06-12 | 2009-08-04 | Northwestern University | Naphthalene-based semiconductor materials and methods of preparing and use thereof |
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| US7892454B2 (en) | 2006-11-17 | 2011-02-22 | Polyera Corporation | Acene-based organic semiconductor materials and methods of preparing and using the same |
| CN101622253B (zh) | 2007-01-08 | 2015-04-29 | 破立纪元有限公司 | 用于制备基于芳烃-双(二羧酰亚胺)的半导体材料的方法和用于制备它们的相关中间体 |
| WO2008091670A2 (en) | 2007-01-24 | 2008-07-31 | Polyera Corporation | Organic semiconductor materials and precursors thereof |
| CN101641749B (zh) | 2007-03-26 | 2011-05-04 | 株式会社村田制作所 | 感光性电介质糊剂及使用其的电子部件 |
| EP2140510A1 (en) * | 2007-04-25 | 2010-01-06 | Merck Patent GmbH | Process for preparing an electronic device |
| KR101353824B1 (ko) | 2007-06-12 | 2014-01-21 | 삼성전자주식회사 | 유기 절연체 형성용 조성물 및 이를 이용하여 제조된 유기절연체 |
| WO2009013291A2 (en) * | 2007-07-25 | 2009-01-29 | Basf Se | Field effect elements |
| JP6097216B2 (ja) * | 2010-09-02 | 2017-03-15 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングMerck Patent Gesellschaft mit beschraenkter Haftung | 電子デバイス用のゲート絶縁層 |
-
2010
- 2010-05-20 JP JP2012512314A patent/JP5886189B2/ja not_active Expired - Fee Related
- 2010-05-20 WO PCT/EP2010/056983 patent/WO2010136385A1/en not_active Ceased
- 2010-05-20 KR KR1020117030258A patent/KR101702484B1/ko not_active Expired - Fee Related
- 2010-05-20 US US13/322,252 patent/US8853820B2/en not_active Expired - Fee Related
- 2010-05-20 CN CN201080032571.3A patent/CN102804439B/zh not_active Expired - Fee Related
- 2010-05-20 EP EP10723074.0A patent/EP2436056B1/en not_active Not-in-force
- 2010-05-25 TW TW099116713A patent/TWI527834B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CN102804439A (zh) | 2012-11-28 |
| US20120068314A1 (en) | 2012-03-22 |
| EP2436056B1 (en) | 2016-08-03 |
| CN102804439B (zh) | 2015-05-27 |
| EP2436056A1 (en) | 2012-04-04 |
| JP5886189B2 (ja) | 2016-03-16 |
| KR101702484B1 (ko) | 2017-02-06 |
| JP2012528476A (ja) | 2012-11-12 |
| US8853820B2 (en) | 2014-10-07 |
| TW201105689A (en) | 2011-02-16 |
| KR20120059457A (ko) | 2012-06-08 |
| WO2010136385A1 (en) | 2010-12-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |