TWI527834B - 可交聯介電質及其製備方法與用途 - Google Patents

可交聯介電質及其製備方法與用途 Download PDF

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Publication number
TWI527834B
TWI527834B TW099116713A TW99116713A TWI527834B TW I527834 B TWI527834 B TW I527834B TW 099116713 A TW099116713 A TW 099116713A TW 99116713 A TW99116713 A TW 99116713A TW I527834 B TWI527834 B TW I527834B
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TW
Taiwan
Prior art keywords
group
electronic device
dielectric
alkyl
compound
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TW099116713A
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English (en)
Chinese (zh)
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TW201105689A (en
Inventor
馬可 凱斯特勒
席克 阿尼卡 庫勤
Original Assignee
巴地斯顏料化工廠
保利艾拉公司
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Application filed by 巴地斯顏料化工廠, 保利艾拉公司 filed Critical 巴地斯顏料化工廠
Publication of TW201105689A publication Critical patent/TW201105689A/zh
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Publication of TWI527834B publication Critical patent/TWI527834B/zh

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/468Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/018Dielectrics
    • H01G4/06Solid dielectrics
    • H01G4/14Organic dielectrics
    • H01G4/18Organic dielectrics of synthetic material, e.g. derivatives of cellulose
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/33Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49894Materials of the insulating layers or coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/466Lateral bottom-gate IGFETs comprising only a single gate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/151Copolymers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10Transparent electrodes, e.g. using graphene
    • H10K2102/101Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Formation Of Insulating Films (AREA)
  • Organic Insulating Materials (AREA)
  • Paints Or Removers (AREA)
TW099116713A 2009-05-25 2010-05-25 可交聯介電質及其製備方法與用途 TWI527834B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP09160980 2009-05-25

Publications (2)

Publication Number Publication Date
TW201105689A TW201105689A (en) 2011-02-16
TWI527834B true TWI527834B (zh) 2016-04-01

Family

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Family Applications (1)

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TW099116713A TWI527834B (zh) 2009-05-25 2010-05-25 可交聯介電質及其製備方法與用途

Country Status (7)

Country Link
US (1) US8853820B2 (enExample)
EP (1) EP2436056B1 (enExample)
JP (1) JP5886189B2 (enExample)
KR (1) KR101702484B1 (enExample)
CN (1) CN102804439B (enExample)
TW (1) TWI527834B (enExample)
WO (1) WO2010136385A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012195580A (ja) * 2011-03-03 2012-10-11 Mitsubishi Chemicals Corp 電界効果トランジスタのゲート絶縁層用組成物、ゲート絶縁層、電界効果トランジスタ及び表示パネル
US8901544B2 (en) * 2011-12-06 2014-12-02 Corning Incorporated Organic thin film transistor with ion exchanged glass substrate
US9171961B2 (en) 2012-07-11 2015-10-27 Polyera Corporation Coating materials for oxide thin film transistors
JP2016506625A (ja) * 2012-12-18 2016-03-03 メルク パテント ゲーエムベーハー 縮合環系を有する発光体
US9035287B2 (en) * 2013-02-01 2015-05-19 Polyera Corporation Polymeric materials for use in metal-oxide-semiconductor field-effect transistors
CN106031308B (zh) 2013-12-24 2019-08-09 飞利斯有限公司 用于附接式二维挠性电子装置的支撑结构
US10261634B2 (en) 2014-03-27 2019-04-16 Flexterra, Inc. Infrared touch system for flexible displays
WO2015183567A1 (en) 2014-05-28 2015-12-03 Polyera Corporation Low power display updates
DE102014215108A1 (de) * 2014-07-31 2016-02-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Elektronisches Bauteil, Verwendung eines Polymerisats sowie Polymerisat
EP3070741B1 (en) * 2015-03-18 2020-07-29 Emberion Oy An apparatus comprising a sensor arrangemenet and associated fabrication method
US10254795B2 (en) 2015-05-06 2019-04-09 Flexterra, Inc. Attachable, flexible display device with flexible tail
DE102015119939A1 (de) 2015-11-18 2017-05-18 ALTANA Aktiengesellschaft Vernetzbare polymere Materialien für dielektrische Schichten in elektronischen Bauteilen
WO2018060016A1 (en) * 2016-09-27 2018-04-05 Basf Se Star-shaped and triblock polymers with enhanced crosslinkability
CN112119515A (zh) * 2018-03-07 2020-12-22 Clap有限公司 用于制造顶栅底接触有机场效应晶体管的图案化方法
US20200066457A1 (en) * 2018-08-24 2020-02-27 Apple Inc. Self-fused capacitor
CN109216549A (zh) * 2018-09-14 2019-01-15 宁波石墨烯创新中心有限公司 一种有机薄膜晶体管及其制备方法
KR102458414B1 (ko) * 2021-01-26 2022-10-25 한국화학연구원 절연성 수지 조성물, 이로부터 제조된 절연체 및 이를 포함하는 유기박막트랜지스터
CN113410384B (zh) * 2021-06-28 2023-04-07 西南大学 一种用于柔性场效应晶体管的聚合物介电层的制备方法
US20250250394A1 (en) * 2021-08-30 2025-08-07 Flexterra, Inc. Dielectric polymer materials with coloration and devices using them
CN113943436B (zh) * 2021-09-29 2023-06-02 郑州大学 一种可简便图案化的耐溶剂高介电常数绝缘层的制备方法

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4586111A (en) 1984-08-01 1986-04-29 Sfe Technologies Capacitor with dielectric comprising a polymer of polyacrylate polyether pre-polymer
EP0250631A1 (en) 1986-07-02 1988-01-07 DeSOTO, INC. Ultraviolet curable buffer coatings for optical fiber
US5126915A (en) 1989-07-28 1992-06-30 E. I. Du Pont De Nemours And Company Metal oxide-coated electrically conductive powders and compositions thereof
US5358775A (en) 1993-07-29 1994-10-25 Rogers Corporation Fluoropolymeric electrical substrate material exhibiting low thermal coefficient of dielectric constant
EP0996313A3 (en) 1995-07-14 2000-08-02 Matsushita Electric Industrial Co., Ltd. Illuminated switch unit
DE69832444T2 (de) 1997-09-11 2006-08-03 E.I. Dupont De Nemours And Co., Wilmington Flexible Polyimidfolie mit hoher dielektrischer Konstante
US6274224B1 (en) 1999-02-01 2001-08-14 3M Innovative Properties Company Passive electrical article, circuit articles thereof, and circuit articles comprising a passive electrical article
US6586791B1 (en) 2000-07-19 2003-07-01 3M Innovative Properties Company Transistor insulator layer incorporating superfine ceramic particles
US6585914B2 (en) 2000-07-24 2003-07-01 Northwestern University N-type thiophene semiconductors
WO2002009201A1 (en) 2000-07-24 2002-01-31 Northwestern University n-TYPE THIOPHENE SEMICONDUCTORS
CA2469912A1 (en) 2001-12-19 2003-06-26 Avecia Limited Organic field effect transistor with an organic dielectric
US7098525B2 (en) 2003-05-08 2006-08-29 3M Innovative Properties Company Organic polymers, electronic devices, and methods
US7279777B2 (en) 2003-05-08 2007-10-09 3M Innovative Properties Company Organic polymers, laminates, and capacitors
US7049629B2 (en) * 2003-08-22 2006-05-23 Xerox Corporation Semiconductor polymers and devices thereof
WO2005076815A2 (en) 2004-01-26 2005-08-25 Northwestern University PERYLENE n-TYPE SEMICONDUCTORS AND RELATED DEVICES
JP5108210B2 (ja) * 2004-06-21 2012-12-26 三星電子株式会社 有機絶縁膜組成物およびこれを用いた有機絶縁膜のパターン形成方法および有機薄膜トランジスタおよびこれを含む表示素子
KR101001441B1 (ko) 2004-08-17 2010-12-14 삼성전자주식회사 유무기 금속 하이브리드 물질 및 이를 포함하는 유기절연체 조성물
KR20070106976A (ko) 2004-09-14 2007-11-06 노오쓰웨스턴 유니버시티 카르보닐-관능화 티오펜 화합물 및 관련 장치 구조물
JP2006140400A (ja) * 2004-11-15 2006-06-01 Kyocera Corp セラミック多層基板及びその製造方法
US20070075308A1 (en) 2005-09-30 2007-04-05 Florian Dotz Active semiconductor devices
KR100793610B1 (ko) * 2005-10-05 2008-01-10 엘지전자 주식회사 플라즈마 디스플레이 패널의 격벽 제조방법 및 이를 이용한플라즈마 디스플레이 패널
WO2007086237A1 (en) 2006-01-24 2007-08-02 Ricoh Company, Ltd. Electronic element, current control device, arithmetic device, and display device
KR101313538B1 (ko) * 2006-04-06 2013-10-01 주식회사 동진쎄미켐 네가티브 감광성 수지 조성물
EP2016594A2 (en) 2006-05-11 2009-01-21 Northwestern University Silole-based polymers and semiconductor materials prepared from the same
US7569693B2 (en) 2006-06-12 2009-08-04 Northwestern University Naphthalene-based semiconductor materials and methods of preparing and use thereof
US20080161464A1 (en) 2006-06-28 2008-07-03 Marks Tobin J Crosslinked polymeric dielectric materials and methods of manufacturing and use thereof
US7947837B2 (en) 2006-10-25 2011-05-24 Polyera Corporation Organic semiconductor materials and methods of preparing and use thereof
EP2086974B1 (en) 2006-11-17 2013-07-24 Polyera Corporation Diimide-based semiconductor materials and methods of preparing and using the same
US7892454B2 (en) 2006-11-17 2011-02-22 Polyera Corporation Acene-based organic semiconductor materials and methods of preparing and using the same
CN101622253B (zh) 2007-01-08 2015-04-29 破立纪元有限公司 用于制备基于芳烃-双(二羧酰亚胺)的半导体材料的方法和用于制备它们的相关中间体
WO2008091670A2 (en) 2007-01-24 2008-07-31 Polyera Corporation Organic semiconductor materials and precursors thereof
CN101641749B (zh) 2007-03-26 2011-05-04 株式会社村田制作所 感光性电介质糊剂及使用其的电子部件
EP2140510A1 (en) * 2007-04-25 2010-01-06 Merck Patent GmbH Process for preparing an electronic device
KR101353824B1 (ko) 2007-06-12 2014-01-21 삼성전자주식회사 유기 절연체 형성용 조성물 및 이를 이용하여 제조된 유기절연체
WO2009013291A2 (en) * 2007-07-25 2009-01-29 Basf Se Field effect elements
JP6097216B2 (ja) * 2010-09-02 2017-03-15 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングMerck Patent Gesellschaft mit beschraenkter Haftung 電子デバイス用のゲート絶縁層

Also Published As

Publication number Publication date
CN102804439A (zh) 2012-11-28
US20120068314A1 (en) 2012-03-22
EP2436056B1 (en) 2016-08-03
CN102804439B (zh) 2015-05-27
EP2436056A1 (en) 2012-04-04
JP5886189B2 (ja) 2016-03-16
KR101702484B1 (ko) 2017-02-06
JP2012528476A (ja) 2012-11-12
US8853820B2 (en) 2014-10-07
TW201105689A (en) 2011-02-16
KR20120059457A (ko) 2012-06-08
WO2010136385A1 (en) 2010-12-02

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