CN102804342B - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
- Publication number
- CN102804342B CN102804342B CN201180013968.2A CN201180013968A CN102804342B CN 102804342 B CN102804342 B CN 102804342B CN 201180013968 A CN201180013968 A CN 201180013968A CN 102804342 B CN102804342 B CN 102804342B
- Authority
- CN
- China
- Prior art keywords
- layer
- electrode layer
- semiconductor device
- atoms
- silicon carbide
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/01—Manufacture or treatment
- H10D12/031—Manufacture or treatment of IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
- H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
- H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
- H10D64/0115—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors to silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P10/00—Bonding of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
- H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
- H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
Landscapes
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010-245149 | 2010-11-01 | ||
| JP2010245149A JP5418466B2 (ja) | 2010-11-01 | 2010-11-01 | 半導体装置およびその製造方法 |
| PCT/JP2011/073995 WO2012060222A1 (ja) | 2010-11-01 | 2011-10-19 | 半導体装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102804342A CN102804342A (zh) | 2012-11-28 |
| CN102804342B true CN102804342B (zh) | 2016-08-03 |
Family
ID=46024339
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201180013968.2A Active CN102804342B (zh) | 2010-11-01 | 2011-10-19 | 半导体器件及其制造方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8823017B2 (https=) |
| EP (1) | EP2637198B1 (https=) |
| JP (1) | JP5418466B2 (https=) |
| KR (1) | KR20130122898A (https=) |
| CN (1) | CN102804342B (https=) |
| CA (1) | CA2790077A1 (https=) |
| TW (1) | TW201234609A (https=) |
| WO (1) | WO2012060222A1 (https=) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014003252A (ja) | 2012-06-21 | 2014-01-09 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置およびその製造方法 |
| EP2913843A4 (en) | 2012-10-23 | 2016-06-29 | Fuji Electric Co Ltd | METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT |
| JP5962475B2 (ja) * | 2012-12-06 | 2016-08-03 | 三菱電機株式会社 | 炭化珪素半導体装置の製造方法及び炭化珪素半導体装置 |
| JP2014123589A (ja) * | 2012-12-20 | 2014-07-03 | Sumitomo Heavy Ind Ltd | 半導体装置の製造方法 |
| JP6323252B2 (ja) * | 2014-08-20 | 2018-05-16 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
| JP2016046311A (ja) * | 2014-08-20 | 2016-04-04 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
| JP2016046309A (ja) * | 2014-08-20 | 2016-04-04 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
| JP6350106B2 (ja) | 2014-08-20 | 2018-07-04 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
| JP2016046449A (ja) * | 2014-08-26 | 2016-04-04 | 住友重機械工業株式会社 | 半導体素子の製造方法 |
| JP6425457B2 (ja) * | 2014-08-26 | 2018-11-21 | 住友重機械工業株式会社 | 半導体素子の製造方法 |
| JP6686581B2 (ja) | 2016-03-16 | 2020-04-22 | 富士電機株式会社 | 炭化珪素半導体素子および炭化珪素半導体素子の製造方法 |
| JP6728096B2 (ja) | 2017-04-24 | 2020-07-22 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
| JP6728097B2 (ja) | 2017-04-24 | 2020-07-22 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
| DE102019101268A1 (de) * | 2019-01-18 | 2020-07-23 | Psc Technologies Gmbh | Verfahren zur Herstellung oder Modifizierung von siliciumcarbidhaltigen Objekten |
| US12100739B2 (en) | 2019-07-17 | 2024-09-24 | Sumitomo Electric Industries, Ltd. | Method for producing silicon carbide semiconductor device and silicon carbide semiconductor device |
| US12087821B2 (en) | 2019-07-17 | 2024-09-10 | Sumitomo Electric Industries, Ltd. | Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device |
| JP7647216B2 (ja) * | 2021-03-22 | 2025-03-18 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
| JP2023137581A (ja) * | 2022-03-18 | 2023-09-29 | キオクシア株式会社 | 半導体装置、半導体装置の製造方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1645634A (zh) * | 2004-01-19 | 2005-07-27 | 三星电机株式会社 | 倒装芯片氮化物半导体发光二极管 |
| JP2006202883A (ja) * | 2005-01-19 | 2006-08-03 | Shindengen Electric Mfg Co Ltd | 半導体装置および半導体装置の製造方法 |
| CN101263581A (zh) * | 2005-09-16 | 2008-09-10 | 克里公司 | 其上有碳化硅功率器件的半导体晶圆的处理方法 |
| CN101536152A (zh) * | 2006-11-02 | 2009-09-16 | 住友电气工业株式会社 | SiC半导体用欧姆电极、SiC半导体用欧姆电极的制造方法、半导体装置以及半导体装置的制造方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6422026A (en) * | 1987-07-17 | 1989-01-25 | Sony Corp | Manufacture of semiconductor device |
| JP3079851B2 (ja) | 1993-09-28 | 2000-08-21 | 富士電機株式会社 | 炭化けい素電子デバイスの製造方法 |
| US7297626B1 (en) * | 2001-08-27 | 2007-11-20 | United States Of America As Represented By The Secretary Of The Army | Process for nickel silicide Ohmic contacts to n-SiC |
| US20050104072A1 (en) | 2003-08-14 | 2005-05-19 | Slater David B.Jr. | Localized annealing of metal-silicon carbide ohmic contacts and devices so formed |
| US20070138482A1 (en) * | 2005-12-08 | 2007-06-21 | Nissan Motor Co., Ltd. | Silicon carbide semiconductor device and method for producing the same |
| CN101542740B (zh) * | 2007-02-14 | 2011-01-12 | 松下电器产业株式会社 | 半导体装置及其制造方法 |
| US7829374B2 (en) * | 2007-07-20 | 2010-11-09 | Panasonic Corporation | Silicon carbide semiconductor device and method for manufacturing the same |
| JP5091063B2 (ja) * | 2008-09-05 | 2012-12-05 | 三菱電機株式会社 | 半導体装置の製造方法 |
| JP5391643B2 (ja) * | 2008-10-22 | 2014-01-15 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
-
2010
- 2010-11-01 JP JP2010245149A patent/JP5418466B2/ja active Active
-
2011
- 2011-10-19 CN CN201180013968.2A patent/CN102804342B/zh active Active
- 2011-10-19 KR KR1020127023119A patent/KR20130122898A/ko not_active Withdrawn
- 2011-10-19 CA CA2790077A patent/CA2790077A1/en not_active Abandoned
- 2011-10-19 WO PCT/JP2011/073995 patent/WO2012060222A1/ja not_active Ceased
- 2011-10-19 US US13/579,482 patent/US8823017B2/en active Active
- 2011-10-19 EP EP11837873.6A patent/EP2637198B1/en active Active
- 2011-10-25 TW TW100138734A patent/TW201234609A/zh unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1645634A (zh) * | 2004-01-19 | 2005-07-27 | 三星电机株式会社 | 倒装芯片氮化物半导体发光二极管 |
| JP2006202883A (ja) * | 2005-01-19 | 2006-08-03 | Shindengen Electric Mfg Co Ltd | 半導体装置および半導体装置の製造方法 |
| CN101263581A (zh) * | 2005-09-16 | 2008-09-10 | 克里公司 | 其上有碳化硅功率器件的半导体晶圆的处理方法 |
| CN101536152A (zh) * | 2006-11-02 | 2009-09-16 | 住友电气工业株式会社 | SiC半导体用欧姆电极、SiC半导体用欧姆电极的制造方法、半导体装置以及半导体装置的制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102804342A (zh) | 2012-11-28 |
| EP2637198A1 (en) | 2013-09-11 |
| US20120319135A1 (en) | 2012-12-20 |
| EP2637198A4 (en) | 2014-12-31 |
| WO2012060222A9 (ja) | 2012-10-11 |
| WO2012060222A1 (ja) | 2012-05-10 |
| CA2790077A1 (en) | 2012-05-10 |
| KR20130122898A (ko) | 2013-11-11 |
| JP2012099598A (ja) | 2012-05-24 |
| JP5418466B2 (ja) | 2014-02-19 |
| EP2637198B1 (en) | 2018-09-26 |
| TW201234609A (en) | 2012-08-16 |
| US8823017B2 (en) | 2014-09-02 |
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Legal Events
| Date | Code | Title | Description |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |