KR20130122898A - 반도체 장치 및 그 제조 방법 - Google Patents

반도체 장치 및 그 제조 방법 Download PDF

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Publication number
KR20130122898A
KR20130122898A KR1020127023119A KR20127023119A KR20130122898A KR 20130122898 A KR20130122898 A KR 20130122898A KR 1020127023119 A KR1020127023119 A KR 1020127023119A KR 20127023119 A KR20127023119 A KR 20127023119A KR 20130122898 A KR20130122898 A KR 20130122898A
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South Korea
Prior art keywords
layer
atoms
electrode layer
semiconductor device
silicon carbide
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KR1020127023119A
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English (en)
Korean (ko)
Inventor
히데토 다마소
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스미토모덴키고교가부시키가이샤
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Publication of KR20130122898A publication Critical patent/KR20130122898A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0115—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors to silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

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  • Electrodes Of Semiconductors (AREA)
KR1020127023119A 2010-11-01 2011-10-19 반도체 장치 및 그 제조 방법 Withdrawn KR20130122898A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010245149A JP5418466B2 (ja) 2010-11-01 2010-11-01 半導体装置およびその製造方法
JPJP-P-2010-245149 2010-11-01
PCT/JP2011/073995 WO2012060222A1 (ja) 2010-11-01 2011-10-19 半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
KR20130122898A true KR20130122898A (ko) 2013-11-11

Family

ID=46024339

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127023119A Withdrawn KR20130122898A (ko) 2010-11-01 2011-10-19 반도체 장치 및 그 제조 방법

Country Status (8)

Country Link
US (1) US8823017B2 (https=)
EP (1) EP2637198B1 (https=)
JP (1) JP5418466B2 (https=)
KR (1) KR20130122898A (https=)
CN (1) CN102804342B (https=)
CA (1) CA2790077A1 (https=)
TW (1) TW201234609A (https=)
WO (1) WO2012060222A1 (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014003252A (ja) 2012-06-21 2014-01-09 Sumitomo Electric Ind Ltd 炭化珪素半導体装置およびその製造方法
EP2913843A4 (en) 2012-10-23 2016-06-29 Fuji Electric Co Ltd METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT
JP5962475B2 (ja) * 2012-12-06 2016-08-03 三菱電機株式会社 炭化珪素半導体装置の製造方法及び炭化珪素半導体装置
JP2014123589A (ja) * 2012-12-20 2014-07-03 Sumitomo Heavy Ind Ltd 半導体装置の製造方法
JP6323252B2 (ja) * 2014-08-20 2018-05-16 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP2016046311A (ja) * 2014-08-20 2016-04-04 住友電気工業株式会社 炭化珪素半導体装置
JP2016046309A (ja) * 2014-08-20 2016-04-04 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP6350106B2 (ja) 2014-08-20 2018-07-04 住友電気工業株式会社 炭化珪素半導体装置
JP2016046449A (ja) * 2014-08-26 2016-04-04 住友重機械工業株式会社 半導体素子の製造方法
JP6425457B2 (ja) * 2014-08-26 2018-11-21 住友重機械工業株式会社 半導体素子の製造方法
JP6686581B2 (ja) 2016-03-16 2020-04-22 富士電機株式会社 炭化珪素半導体素子および炭化珪素半導体素子の製造方法
JP6728096B2 (ja) 2017-04-24 2020-07-22 株式会社東芝 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機
JP6728097B2 (ja) 2017-04-24 2020-07-22 株式会社東芝 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機
DE102019101268A1 (de) * 2019-01-18 2020-07-23 Psc Technologies Gmbh Verfahren zur Herstellung oder Modifizierung von siliciumcarbidhaltigen Objekten
US12100739B2 (en) 2019-07-17 2024-09-24 Sumitomo Electric Industries, Ltd. Method for producing silicon carbide semiconductor device and silicon carbide semiconductor device
US12087821B2 (en) 2019-07-17 2024-09-10 Sumitomo Electric Industries, Ltd. Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device
JP7647216B2 (ja) * 2021-03-22 2025-03-18 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP2023137581A (ja) * 2022-03-18 2023-09-29 キオクシア株式会社 半導体装置、半導体装置の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6422026A (en) * 1987-07-17 1989-01-25 Sony Corp Manufacture of semiconductor device
JP3079851B2 (ja) 1993-09-28 2000-08-21 富士電機株式会社 炭化けい素電子デバイスの製造方法
US7297626B1 (en) * 2001-08-27 2007-11-20 United States Of America As Represented By The Secretary Of The Army Process for nickel silicide Ohmic contacts to n-SiC
US20050104072A1 (en) 2003-08-14 2005-05-19 Slater David B.Jr. Localized annealing of metal-silicon carbide ohmic contacts and devices so formed
KR100586949B1 (ko) * 2004-01-19 2006-06-07 삼성전기주식회사 플립칩용 질화물 반도체 발광소자
JP4594113B2 (ja) * 2005-01-19 2010-12-08 新電元工業株式会社 半導体装置の製造方法
EP1935007B1 (en) * 2005-09-16 2023-02-22 Wolfspeed, Inc. Methods of processing semiconductor wafers having silicon carbide power devices thereon
US20070138482A1 (en) * 2005-12-08 2007-06-21 Nissan Motor Co., Ltd. Silicon carbide semiconductor device and method for producing the same
JP4140648B2 (ja) * 2006-11-02 2008-08-27 住友電気工業株式会社 ＳｉＣ半導体用オーミック電極、ＳｉＣ半導体用オーミック電極の製造方法、半導体装置および半導体装置の製造方法
CN101542740B (zh) * 2007-02-14 2011-01-12 松下电器产业株式会社 半导体装置及其制造方法
US7829374B2 (en) * 2007-07-20 2010-11-09 Panasonic Corporation Silicon carbide semiconductor device and method for manufacturing the same
JP5091063B2 (ja) * 2008-09-05 2012-12-05 三菱電機株式会社 半導体装置の製造方法
JP5391643B2 (ja) * 2008-10-22 2014-01-15 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法

Also Published As

Publication number Publication date
CN102804342A (zh) 2012-11-28
EP2637198A1 (en) 2013-09-11
US20120319135A1 (en) 2012-12-20
EP2637198A4 (en) 2014-12-31
CN102804342B (zh) 2016-08-03
WO2012060222A9 (ja) 2012-10-11
WO2012060222A1 (ja) 2012-05-10
CA2790077A1 (en) 2012-05-10
JP2012099598A (ja) 2012-05-24
JP5418466B2 (ja) 2014-02-19
EP2637198B1 (en) 2018-09-26
TW201234609A (en) 2012-08-16
US8823017B2 (en) 2014-09-02

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