CN102796223A - 聚合物组合物以及包含所述聚合物的光刻胶 - Google Patents

聚合物组合物以及包含所述聚合物的光刻胶 Download PDF

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Publication number
CN102796223A
CN102796223A CN2012102429953A CN201210242995A CN102796223A CN 102796223 A CN102796223 A CN 102796223A CN 2012102429953 A CN2012102429953 A CN 2012102429953A CN 201210242995 A CN201210242995 A CN 201210242995A CN 102796223 A CN102796223 A CN 102796223A
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CN
China
Prior art keywords
alkyl
group
multipolymer
monomer
combination
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Pending
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CN2012102429953A
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English (en)
Chinese (zh)
Inventor
G·P·普洛科泊维兹
G·波勒斯
李明琦
C·吴
刘骢
C·徐
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DuPont Electronic Materials International LLC
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Rohm and Haas Electronic Materials LLC
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Application filed by Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials LLC
Publication of CN102796223A publication Critical patent/CN102796223A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F214/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F214/18—Monomers containing fluorine
    • C08F214/186—Monomers containing fluorine with non-fluorinated comonomers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F214/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F214/18—Monomers containing fluorine
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
CN2012102429953A 2011-05-27 2012-05-28 聚合物组合物以及包含所述聚合物的光刻胶 Pending CN102796223A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161490883P 2011-05-27 2011-05-27
US61/490,883 2011-05-27

Publications (1)

Publication Number Publication Date
CN102796223A true CN102796223A (zh) 2012-11-28

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2012102429953A Pending CN102796223A (zh) 2011-05-27 2012-05-28 聚合物组合物以及包含所述聚合物的光刻胶

Country Status (5)

Country Link
US (1) US8603728B2 (enExample)
EP (1) EP2527379A1 (enExample)
JP (1) JP5897986B2 (enExample)
CN (1) CN102796223A (enExample)
TW (1) TWI507428B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107251190A (zh) * 2014-12-24 2017-10-13 正交公司 电子装置的光刻图案化
CN104725558B (zh) * 2013-12-19 2018-07-27 罗门哈斯电子材料有限公司 光致酸生成共聚物和相关的光刻胶组合物、涂覆的基材以及形成电子器件的方法
CN118702852A (zh) * 2024-08-29 2024-09-27 珠海基石科技有限公司 含氟树脂及其制备方法、含氟单体、树脂组合物、功能膜和功能件、半导体器件及其制备方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5793489B2 (ja) * 2011-11-30 2015-10-14 富士フイルム株式会社 感活性光線性又は感放射線性組成物、それを用いたレジスト膜、パターン形成方法、及び電子デバイスの製造方法
JP6267532B2 (ja) 2014-02-14 2018-01-24 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
KR102233577B1 (ko) 2014-02-25 2021-03-30 삼성전자주식회사 반도체 소자의 패턴 형성 방법
CN119161524B (zh) * 2024-11-19 2025-04-08 中节能万润股份有限公司 一种用于电子束光刻胶的聚合物及其制备方法和应用

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US20060246373A1 (en) * 2005-05-01 2006-11-02 Rohm And Haas Electronic Materials Llc Compositions and processes for immersion lithography
JP2008165146A (ja) * 2007-01-05 2008-07-17 Fujifilm Corp ポジ型感光性組成物、それを用いたパターン形成方法及び該ポジ型感光性組成物に用いられる樹脂
WO2010071029A1 (ja) * 2008-12-15 2010-06-24 セントラル硝子株式会社 含フッ素重合性単量体、含フッ素重合体、レジスト材料及びパターン形成方法

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JP5741297B2 (ja) * 2010-08-05 2015-07-01 Jsr株式会社 感放射線性樹脂組成物、レジストパターン形成方法及び重合体

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060246373A1 (en) * 2005-05-01 2006-11-02 Rohm And Haas Electronic Materials Llc Compositions and processes for immersion lithography
JP2008165146A (ja) * 2007-01-05 2008-07-17 Fujifilm Corp ポジ型感光性組成物、それを用いたパターン形成方法及び該ポジ型感光性組成物に用いられる樹脂
WO2010071029A1 (ja) * 2008-12-15 2010-06-24 セントラル硝子株式会社 含フッ素重合性単量体、含フッ素重合体、レジスト材料及びパターン形成方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104725558B (zh) * 2013-12-19 2018-07-27 罗门哈斯电子材料有限公司 光致酸生成共聚物和相关的光刻胶组合物、涂覆的基材以及形成电子器件的方法
CN107251190A (zh) * 2014-12-24 2017-10-13 正交公司 电子装置的光刻图案化
CN107251190B (zh) * 2014-12-24 2020-11-10 正交公司 电子装置的光刻图案化
CN118702852A (zh) * 2024-08-29 2024-09-27 珠海基石科技有限公司 含氟树脂及其制备方法、含氟单体、树脂组合物、功能膜和功能件、半导体器件及其制备方法
CN118702852B (zh) * 2024-08-29 2024-11-08 珠海基石科技有限公司 含氟树脂及其制备方法、含氟单体、树脂组合物、功能膜和功能件、半导体器件及其制备方法

Also Published As

Publication number Publication date
TWI507428B (zh) 2015-11-11
JP5897986B2 (ja) 2016-04-06
TW201307406A (zh) 2013-02-16
EP2527379A1 (en) 2012-11-28
US20120301823A1 (en) 2012-11-29
US8603728B2 (en) 2013-12-10
JP2013010936A (ja) 2013-01-17

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Application publication date: 20121128

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