JP5897986B2 - ポリマー組成物およびこのポリマーを含むフォトレジスト - Google Patents

ポリマー組成物およびこのポリマーを含むフォトレジスト Download PDF

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Publication number
JP5897986B2
JP5897986B2 JP2012117271A JP2012117271A JP5897986B2 JP 5897986 B2 JP5897986 B2 JP 5897986B2 JP 2012117271 A JP2012117271 A JP 2012117271A JP 2012117271 A JP2012117271 A JP 2012117271A JP 5897986 B2 JP5897986 B2 JP 5897986B2
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monomer
polymer
alkyl
base
combination
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JP2012117271A
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Japanese (ja)
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JP2013010936A (ja
JP2013010936A5 (enExample
Inventor
グレゴリー・ピー．プロコポビッチ
ゲルハルト・ポーラース
ミンキー・リー
チュンイ・ウー
コン・リュウ
チェンバイ・スー
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DuPont Electronic Materials International LLC
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Rohm and Haas Electronic Materials LLC
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F214/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F214/18—Monomers containing fluorine
    • C08F214/186—Monomers containing fluorine with non-fluorinated comonomers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F214/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F214/18—Monomers containing fluorine
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2012117271A 2011-05-27 2012-05-23 ポリマー組成物およびこのポリマーを含むフォトレジスト Expired - Fee Related JP5897986B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161490883P 2011-05-27 2011-05-27
US61/490,883 2011-05-27

Publications (3)

Publication Number Publication Date
JP2013010936A JP2013010936A (ja) 2013-01-17
JP2013010936A5 JP2013010936A5 (enExample) 2016-03-17
JP5897986B2 true JP5897986B2 (ja) 2016-04-06

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JP2012117271A Expired - Fee Related JP5897986B2 (ja) 2011-05-27 2012-05-23 ポリマー組成物およびこのポリマーを含むフォトレジスト

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Country Link
US (1) US8603728B2 (enExample)
EP (1) EP2527379A1 (enExample)
JP (1) JP5897986B2 (enExample)
CN (1) CN102796223A (enExample)
TW (1) TWI507428B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5793489B2 (ja) * 2011-11-30 2015-10-14 富士フイルム株式会社 感活性光線性又は感放射線性組成物、それを用いたレジスト膜、パターン形成方法、及び電子デバイスの製造方法
US9581901B2 (en) * 2013-12-19 2017-02-28 Rohm And Haas Electronic Materials Llc Photoacid-generating copolymer and associated photoresist composition, coated substrate, and method of forming an electronic device
JP6267532B2 (ja) 2014-02-14 2018-01-24 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
KR102233577B1 (ko) 2014-02-25 2021-03-30 삼성전자주식회사 반도체 소자의 패턴 형성 방법
KR102480950B1 (ko) * 2014-12-24 2022-12-23 올싸거널 인코포레이티드 전자 장치의 포토리소그래피 패터닝
CN118702852B (zh) * 2024-08-29 2024-11-08 珠海基石科技有限公司 含氟树脂及其制备方法、含氟单体、树脂组合物、功能膜和功能件、半导体器件及其制备方法
CN119161524B (zh) * 2024-11-19 2025-04-08 中节能万润股份有限公司 一种用于电子束光刻胶的聚合物及其制备方法和应用

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JPH0654382B2 (ja) 1986-11-18 1994-07-20 富士写真フイルム株式会社 感光性組成物
AU632605B2 (en) * 1989-08-14 1993-01-07 Mitsubishi Rayon Company Limited Material for dentistry
US5229245A (en) * 1991-07-26 1993-07-20 Industrial Technology Research Institute Positively working photosensitive composition
US5185403A (en) * 1991-07-31 1993-02-09 Morton Coatings, Inc. Thermosetting acrylic polymers and coating compositions containing said acrylic polymers and fluorocarbon resins
US6011119A (en) * 1995-07-28 2000-01-04 Mitsui Chemicals, Inc. Resin composition for electrophotographic toner, and toner
WO1997043325A1 (en) * 1996-05-10 1997-11-20 E.I. Du Pont De Nemours And Company Acrylic polymer compounds
JP3623058B2 (ja) 1996-06-13 2005-02-23 和光純薬工業株式会社 新規ポリマー及びこれを用いたレジスト組成物並びにこれを用いたパターン形成方法
TW491860B (en) 1997-04-30 2002-06-21 Wako Pure Chem Ind Ltd Acrylic or methacrylic acid derivatives and polymers obtained therefrom
JP3788549B2 (ja) 1997-09-30 2006-06-21 旭電化工業株式会社 ポリビニルブチラール樹脂組成物
US6254878B1 (en) * 1999-07-01 2001-07-03 E. I. Du Pont De Nemours And Company Nail polish compositions containing acrylic polymers
JP3984488B2 (ja) * 2001-03-27 2007-10-03 日本ペイント株式会社 硬化性塗料組成物および塗膜形成方法
KR100821440B1 (ko) * 2003-01-31 2008-04-10 미츠비시 레이온 가부시키가이샤 레지스트용 중합체 및 레지스트 조성물
JP4301872B2 (ja) * 2003-06-19 2009-07-22 ダイセル化学工業株式会社 ラクトン環含有重合性単量体、高分子化合物、フォトレジスト用樹脂組成物、及び半導体の製造方法
US7063931B2 (en) * 2004-01-08 2006-06-20 International Business Machines Corporation Positive photoresist composition with a polymer including a fluorosulfonamide group and process for its use
JP4442887B2 (ja) * 2004-02-27 2010-03-31 三菱レイヨン株式会社 レジスト用重合体
TWI368825B (en) * 2004-07-07 2012-07-21 Fujifilm Corp Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same
JP4714488B2 (ja) * 2004-08-26 2011-06-29 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2006171667A (ja) * 2004-11-22 2006-06-29 Fuji Photo Film Co Ltd ポジ型レジスト組成物及びそれを用いたパターン形成方法
US7247419B2 (en) * 2005-04-11 2007-07-24 Az Electronic Materials Usa Corp. Nanocomposite photosensitive composition and use thereof
EP1720072B1 (en) * 2005-05-01 2019-06-05 Rohm and Haas Electronic Materials, L.L.C. Compositons and processes for immersion lithography
JP4614092B2 (ja) * 2006-01-31 2011-01-19 信越化学工業株式会社 フッ素アルコール化合物の製造方法
JP2007284368A (ja) * 2006-04-14 2007-11-01 Daicel Chem Ind Ltd （メタ）アクリル系単量体及びレジスト樹脂の保護膜用樹脂
JP2007284381A (ja) * 2006-04-18 2007-11-01 Daicel Chem Ind Ltd フォトレジスト用（メタ）アクリル系単量体、その高分子化合物及びフォトレジスト用樹脂組成物
JP2008165146A (ja) * 2007-01-05 2008-07-17 Fujifilm Corp ポジ型感光性組成物、それを用いたパターン形成方法及び該ポジ型感光性組成物に用いられる樹脂
EP1970760B1 (en) * 2007-03-14 2012-12-26 FUJIFILM Corporation Positive resist composition containing a resin for hydrophobilizing resist surface, method for production thereof
JP4621754B2 (ja) * 2007-03-28 2011-01-26 富士フイルム株式会社 ポジ型レジスト組成物およびパターン形成方法
JP4743450B2 (ja) * 2008-09-05 2011-08-10 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
US8716385B2 (en) * 2008-12-15 2014-05-06 Central Glass Company, Limited Polymerizable fluoromonomer, fluoropolymer, resist material, and method of pattern formation
JP5402809B2 (ja) * 2009-04-21 2014-01-29 セントラル硝子株式会社 トップコート組成物
JP5698923B2 (ja) 2009-06-26 2015-04-08 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 自己整合型スペーサー多重パターニング方法
JP5741297B2 (ja) * 2010-08-05 2015-07-01 Jsr株式会社 感放射線性樹脂組成物、レジストパターン形成方法及び重合体

Also Published As

Publication number Publication date
JP2013010936A (ja) 2013-01-17
TWI507428B (zh) 2015-11-11
EP2527379A1 (en) 2012-11-28
US20120301823A1 (en) 2012-11-29
CN102796223A (zh) 2012-11-28
TW201307406A (zh) 2013-02-16
US8603728B2 (en) 2013-12-10

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