CN102790171B - 存储元件和存储装置 - Google Patents

存储元件和存储装置 Download PDF

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Publication number
CN102790171B
CN102790171B CN201210143618.4A CN201210143618A CN102790171B CN 102790171 B CN102790171 B CN 102790171B CN 201210143618 A CN201210143618 A CN 201210143618A CN 102790171 B CN102790171 B CN 102790171B
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CN
China
Prior art keywords
layer
magnetization
magnetic coupling
magnetization fixed
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN201210143618.4A
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English (en)
Chinese (zh)
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CN102790171A (zh
Inventor
大森广之
细见政功
别所和宏
肥后丰
山根一阳
内田裕行
浅山徹哉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
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Sony Corp
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Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to CN201610305766.XA priority Critical patent/CN105825882B/zh
Publication of CN102790171A publication Critical patent/CN102790171A/zh
Application granted granted Critical
Publication of CN102790171B publication Critical patent/CN102790171B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/933—Spintronics or quantum computing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/933—Spintronics or quantum computing
    • Y10S977/935—Spin dependent tunnel, SDT, junction, e.g. tunneling magnetoresistance, TMR

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
CN201210143618.4A 2011-05-19 2012-05-09 存储元件和存储装置 Expired - Fee Related CN102790171B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610305766.XA CN105825882B (zh) 2011-05-19 2012-05-09 自旋转移扭矩存储元件和存储装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-112219 2011-05-19
JP2011112219A JP5768494B2 (ja) 2011-05-19 2011-05-19 記憶素子、記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201610305766.XA Division CN105825882B (zh) 2011-05-19 2012-05-09 自旋转移扭矩存储元件和存储装置

Publications (2)

Publication Number Publication Date
CN102790171A CN102790171A (zh) 2012-11-21
CN102790171B true CN102790171B (zh) 2016-06-29

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
CN201610305766.XA Active CN105825882B (zh) 2011-05-19 2012-05-09 自旋转移扭矩存储元件和存储装置
CN201210143618.4A Expired - Fee Related CN102790171B (zh) 2011-05-19 2012-05-09 存储元件和存储装置

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201610305766.XA Active CN105825882B (zh) 2011-05-19 2012-05-09 自旋转移扭矩存储元件和存储装置

Country Status (5)

Country Link
US (3) US8923037B2 (enExample)
JP (1) JP5768494B2 (enExample)
KR (1) KR101983855B1 (enExample)
CN (2) CN105825882B (enExample)
TW (2) TWI467703B (enExample)

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JP5824907B2 (ja) * 2011-06-24 2015-12-02 富士通株式会社 磁気抵抗素子及び磁気記憶装置
JP5722140B2 (ja) 2011-07-04 2015-05-20 株式会社東芝 磁気抵抗素子及び磁気メモリ
US8946837B2 (en) 2011-07-04 2015-02-03 Kabushiki Kaisha Toshiba Semiconductor storage device with magnetoresistive element
JP5728311B2 (ja) * 2011-07-04 2015-06-03 株式会社東芝 磁気抵抗素子及び磁気メモリ
US9837602B2 (en) 2015-12-16 2017-12-05 Western Digital Technologies, Inc. Spin-orbit torque bit design for improved switching efficiency
JP2017139399A (ja) * 2016-02-05 2017-08-10 Tdk株式会社 磁気メモリ
JPWO2017169291A1 (ja) * 2016-03-30 2019-02-07 ソニー株式会社 磁気抵抗素子、メモリ素子及び電子機器
US10593388B2 (en) * 2017-02-27 2020-03-17 Tdk Corporation Spin current magnetization rotational element, magnetoresistance effect element, and magnetic memory
EP3442042B1 (en) * 2017-08-10 2020-12-09 Commissariat à l'Energie Atomique et aux Energies Alternatives Synthetic antiferromagnetic layer, magnetic tunnel junction and spintronic device using said synthetic antiferromagnetic layer
US10840259B2 (en) 2018-08-13 2020-11-17 Sandisk Technologies Llc Three-dimensional memory device including liner free molybdenum word lines and methods of making the same

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CN1726601A (zh) * 2002-12-16 2006-01-25 日本电气株式会社 磁隧道元件及使用其的磁存储器
CN101145351A (zh) * 2006-09-13 2008-03-19 富士电机电子技术株式会社 垂直磁性记录介质
CN101689599A (zh) * 2007-06-19 2010-03-31 佳能安内华股份有限公司 隧道磁阻薄膜及磁性多层膜制作装置

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JP2001308413A (ja) 2000-02-18 2001-11-02 Sony Corp 磁気抵抗効果薄膜、磁気抵抗効果素子及び磁気抵抗効果型磁気ヘッド
JP2002329905A (ja) * 2001-05-02 2002-11-15 Fujitsu Ltd Ｃｐｐ構造磁気抵抗効果素子およびその製造方法
JP2003152240A (ja) * 2001-11-13 2003-05-23 Hitachi Ltd 酸化物層を含んだ積層体及びこれを用いた磁気抵抗効果型ヘッド、磁気記録再生装置
DE10214159B4 (de) * 2002-03-28 2008-03-20 Qimonda Ag Verfahren zur Herstellung einer Referenzschicht für MRAM-Speicherzellen
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JP3788964B2 (ja) * 2002-09-10 2006-06-21 株式会社東芝 磁気ランダムアクセスメモリ
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WO2004055906A1 (ja) * 2002-12-13 2004-07-01 Japan Science And Technology Agency スピン注入デバイス及びこれを用いた磁気装置並びにこれらに用いられる磁性薄膜
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JP4874884B2 (ja) * 2007-07-11 2012-02-15 株式会社東芝 磁気記録素子及び磁気記録装置
JP2009081215A (ja) 2007-09-25 2009-04-16 Toshiba Corp 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ
JP4599425B2 (ja) 2008-03-27 2010-12-15 株式会社東芝 磁気抵抗素子及び磁気メモリ
US7948044B2 (en) * 2008-04-09 2011-05-24 Magic Technologies, Inc. Low switching current MTJ element for ultra-high STT-RAM and a method for making the same
JP2010109319A (ja) 2008-09-30 2010-05-13 Canon Anelva Corp 磁気抵抗素子の製造法および記憶媒体
US8102700B2 (en) * 2008-09-30 2012-01-24 Micron Technology, Inc. Unidirectional spin torque transfer magnetic memory cell structure
KR101607357B1 (ko) * 2008-12-02 2016-03-29 아이아이아이 홀딩스 3, 엘엘씨 자기 메모리 소자 및 불휘발성 기억장치
JP5579175B2 (ja) * 2009-05-28 2014-08-27 株式会社日立製作所 磁気抵抗効果素子及びそれを用いたランダムアクセスメモリ

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CN1308317A (zh) * 1999-09-16 2001-08-15 株式会社东芝 磁电阻元件和磁存储装置
CN1726601A (zh) * 2002-12-16 2006-01-25 日本电气株式会社 磁隧道元件及使用其的磁存储器
US20050045931A1 (en) * 2003-08-28 2005-03-03 Headway Technologies, Inc. Magnetic random access memory designs with controlled magnetic switching mechanism by magnetostatic coupling
CN101145351A (zh) * 2006-09-13 2008-03-19 富士电机电子技术株式会社 垂直磁性记录介质
CN101689599A (zh) * 2007-06-19 2010-03-31 佳能安内华股份有限公司 隧道磁阻薄膜及磁性多层膜制作装置

Also Published As

Publication number Publication date
US20120294079A1 (en) 2012-11-22
US8923037B2 (en) 2014-12-30
US20150137288A1 (en) 2015-05-21
TW201519484A (zh) 2015-05-16
US20150295169A1 (en) 2015-10-15
TW201248788A (en) 2012-12-01
KR101983855B1 (ko) 2019-05-29
TWI467703B (zh) 2015-01-01
CN105825882A (zh) 2016-08-03
US9257635B2 (en) 2016-02-09
JP2012243933A (ja) 2012-12-10
CN105825882B (zh) 2018-06-12
TWI514637B (zh) 2015-12-21
CN102790171A (zh) 2012-11-21
US9099642B2 (en) 2015-08-04
JP5768494B2 (ja) 2015-08-26
KR20120129772A (ko) 2012-11-28

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Granted publication date: 20160629