TWI467703B - Memory elements and memory devices - Google Patents

Memory elements and memory devices Download PDF

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Publication number
TWI467703B
TWI467703B TW101111175A TW101111175A TWI467703B TW I467703 B TWI467703 B TW I467703B TW 101111175 A TW101111175 A TW 101111175A TW 101111175 A TW101111175 A TW 101111175A TW I467703 B TWI467703 B TW I467703B
Authority
TW
Taiwan
Prior art keywords
layer
memory
magnetization
magnetic
film
Prior art date
Application number
TW101111175A
Other languages
English (en)
Chinese (zh)
Other versions
TW201248788A (en
Inventor
大森廣之
細見政功
別所和宏
肥後豐
山根一陽
內田裕行
淺山徹哉
Original Assignee
新力股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 新力股份有限公司 filed Critical 新力股份有限公司
Publication of TW201248788A publication Critical patent/TW201248788A/zh
Application granted granted Critical
Publication of TWI467703B publication Critical patent/TWI467703B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/933—Spintronics or quantum computing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/933—Spintronics or quantum computing
    • Y10S977/935—Spin dependent tunnel, SDT, junction, e.g. tunneling magnetoresistance, TMR

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
TW101111175A 2011-05-19 2012-03-29 Memory elements and memory devices TWI467703B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011112219A JP5768494B2 (ja) 2011-05-19 2011-05-19 記憶素子、記憶装置

Publications (2)

Publication Number Publication Date
TW201248788A TW201248788A (en) 2012-12-01
TWI467703B true TWI467703B (zh) 2015-01-01

Family

ID=47155515

Family Applications (2)

Application Number Title Priority Date Filing Date
TW101111175A TWI467703B (zh) 2011-05-19 2012-03-29 Memory elements and memory devices
TW103134444A TWI514637B (zh) 2011-05-19 2012-03-29 Memory elements and memory devices

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW103134444A TWI514637B (zh) 2011-05-19 2012-03-29 Memory elements and memory devices

Country Status (5)

Country Link
US (3) US8923037B2 (enExample)
JP (1) JP5768494B2 (enExample)
KR (1) KR101983855B1 (enExample)
CN (2) CN105825882B (enExample)
TW (2) TWI467703B (enExample)

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US8946837B2 (en) 2011-07-04 2015-02-03 Kabushiki Kaisha Toshiba Semiconductor storage device with magnetoresistive element
JP5722140B2 (ja) 2011-07-04 2015-05-20 株式会社東芝 磁気抵抗素子及び磁気メモリ
JP5728311B2 (ja) * 2011-07-04 2015-06-03 株式会社東芝 磁気抵抗素子及び磁気メモリ
US9837602B2 (en) 2015-12-16 2017-12-05 Western Digital Technologies, Inc. Spin-orbit torque bit design for improved switching efficiency
JP2017139399A (ja) * 2016-02-05 2017-08-10 Tdk株式会社 磁気メモリ
WO2017169291A1 (ja) * 2016-03-30 2017-10-05 ソニー株式会社 磁気抵抗素子、メモリ素子及び電子機器
WO2018155077A1 (ja) * 2017-02-27 2018-08-30 Tdk株式会社 スピン流磁化回転素子、磁気抵抗効果素子及び磁気メモリ
EP3442042B1 (en) * 2017-08-10 2020-12-09 Commissariat à l'Energie Atomique et aux Energies Alternatives Synthetic antiferromagnetic layer, magnetic tunnel junction and spintronic device using said synthetic antiferromagnetic layer
US10840259B2 (en) 2018-08-13 2020-11-17 Sandisk Technologies Llc Three-dimensional memory device including liner free molybdenum word lines and methods of making the same

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TW200304700A (en) * 2002-03-28 2003-10-01 Infineon Technologies Ag Method for producing a reference layer and MRAM memory cell provided with such a reference layer
CN100354973C (zh) * 2002-09-10 2007-12-12 株式会社东芝 磁随机存取存储器
TW200828304A (en) * 2006-12-26 2008-07-01 Sony Corp Storage element and memory
US20090180308A1 (en) * 2002-12-13 2009-07-16 Japan Science And Technology Agency Method of using spin injection device

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JP2002329905A (ja) * 2001-05-02 2002-11-15 Fujitsu Ltd Ｃｐｐ構造磁気抵抗効果素子およびその製造方法
JP2003152240A (ja) 2001-11-13 2003-05-23 Hitachi Ltd 酸化物層を含んだ積層体及びこれを用いた磁気抵抗効果型ヘッド、磁気記録再生装置
WO2003090290A1 (en) * 2002-04-22 2003-10-30 Matsushita Electric Industrial Co., Ltd. Magnetoresistance effect element, magnetic head comprising it, magnetic memory, and magnetic recorder
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JP2005064050A (ja) * 2003-08-14 2005-03-10 Toshiba Corp 半導体記憶装置及びそのデータ書き込み方法
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JP4599425B2 (ja) 2008-03-27 2010-12-15 株式会社東芝 磁気抵抗素子及び磁気メモリ
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TW200304700A (en) * 2002-03-28 2003-10-01 Infineon Technologies Ag Method for producing a reference layer and MRAM memory cell provided with such a reference layer
CN100354973C (zh) * 2002-09-10 2007-12-12 株式会社东芝 磁随机存取存储器
US20090180308A1 (en) * 2002-12-13 2009-07-16 Japan Science And Technology Agency Method of using spin injection device
TW200828304A (en) * 2006-12-26 2008-07-01 Sony Corp Storage element and memory

Also Published As

Publication number Publication date
US20150295169A1 (en) 2015-10-15
TW201248788A (en) 2012-12-01
KR20120129772A (ko) 2012-11-28
US9257635B2 (en) 2016-02-09
JP2012243933A (ja) 2012-12-10
US20150137288A1 (en) 2015-05-21
US8923037B2 (en) 2014-12-30
KR101983855B1 (ko) 2019-05-29
CN102790171A (zh) 2012-11-21
CN105825882B (zh) 2018-06-12
CN105825882A (zh) 2016-08-03
TW201519484A (zh) 2015-05-16
CN102790171B (zh) 2016-06-29
JP5768494B2 (ja) 2015-08-26
TWI514637B (zh) 2015-12-21
US20120294079A1 (en) 2012-11-22
US9099642B2 (en) 2015-08-04

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