CN105825882B - 自旋转移扭矩存储元件和存储装置 - Google Patents

自旋转移扭矩存储元件和存储装置 Download PDF

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Publication number
CN105825882B
CN105825882B CN201610305766.XA CN201610305766A CN105825882B CN 105825882 B CN105825882 B CN 105825882B CN 201610305766 A CN201610305766 A CN 201610305766A CN 105825882 B CN105825882 B CN 105825882B
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China
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layer
magnetization
thickness
magnetic
film
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Chinese (zh)
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CN105825882A (zh
Inventor
大森广之
细见政功
别所和宏
肥后丰
山根阳
山根一阳
内田裕行
浅山徹哉
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Sony Corp
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Sony Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/933—Spintronics or quantum computing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/933—Spintronics or quantum computing
    • Y10S977/935—Spin dependent tunnel, SDT, junction, e.g. tunneling magnetoresistance, TMR

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
CN201610305766.XA 2011-05-19 2012-05-09 自旋转移扭矩存储元件和存储装置 Active CN105825882B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011-112219 2011-05-19
JP2011112219A JP5768494B2 (ja) 2011-05-19 2011-05-19 記憶素子、記憶装置
CN201210143618.4A CN102790171B (zh) 2011-05-19 2012-05-09 存储元件和存储装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201210143618.4A Division CN102790171B (zh) 2011-05-19 2012-05-09 存储元件和存储装置

Publications (2)

Publication Number Publication Date
CN105825882A CN105825882A (zh) 2016-08-03
CN105825882B true CN105825882B (zh) 2018-06-12

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CN201610305766.XA Active CN105825882B (zh) 2011-05-19 2012-05-09 自旋转移扭矩存储元件和存储装置
CN201210143618.4A Expired - Fee Related CN102790171B (zh) 2011-05-19 2012-05-09 存储元件和存储装置

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Country Status (5)

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US (3) US8923037B2 (enExample)
JP (1) JP5768494B2 (enExample)
KR (1) KR101983855B1 (enExample)
CN (2) CN105825882B (enExample)
TW (2) TWI467703B (enExample)

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JP5728311B2 (ja) * 2011-07-04 2015-06-03 株式会社東芝 磁気抵抗素子及び磁気メモリ
JP5722140B2 (ja) 2011-07-04 2015-05-20 株式会社東芝 磁気抵抗素子及び磁気メモリ
US8946837B2 (en) 2011-07-04 2015-02-03 Kabushiki Kaisha Toshiba Semiconductor storage device with magnetoresistive element
US9837602B2 (en) 2015-12-16 2017-12-05 Western Digital Technologies, Inc. Spin-orbit torque bit design for improved switching efficiency
JP2017139399A (ja) * 2016-02-05 2017-08-10 Tdk株式会社 磁気メモリ
CN108780781A (zh) * 2016-03-30 2018-11-09 索尼公司 磁阻元件、存储元件和电子装置
WO2018155077A1 (ja) * 2017-02-27 2018-08-30 Tdk株式会社 スピン流磁化回転素子、磁気抵抗効果素子及び磁気メモリ
EP3442042B1 (en) * 2017-08-10 2020-12-09 Commissariat à l'Energie Atomique et aux Energies Alternatives Synthetic antiferromagnetic layer, magnetic tunnel junction and spintronic device using said synthetic antiferromagnetic layer
US10840259B2 (en) 2018-08-13 2020-11-17 Sandisk Technologies Llc Three-dimensional memory device including liner free molybdenum word lines and methods of making the same

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Also Published As

Publication number Publication date
US9257635B2 (en) 2016-02-09
KR20120129772A (ko) 2012-11-28
US8923037B2 (en) 2014-12-30
US20150295169A1 (en) 2015-10-15
JP5768494B2 (ja) 2015-08-26
TW201248788A (en) 2012-12-01
TW201519484A (zh) 2015-05-16
US9099642B2 (en) 2015-08-04
US20150137288A1 (en) 2015-05-21
JP2012243933A (ja) 2012-12-10
TWI467703B (zh) 2015-01-01
KR101983855B1 (ko) 2019-05-29
CN102790171B (zh) 2016-06-29
CN102790171A (zh) 2012-11-21
TWI514637B (zh) 2015-12-21
CN105825882A (zh) 2016-08-03
US20120294079A1 (en) 2012-11-22

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