CN102782820A - 制造碳化硅半导体器件的方法和装置 - Google Patents

制造碳化硅半导体器件的方法和装置 Download PDF

Info

Publication number
CN102782820A
CN102782820A CN2011800047820A CN201180004782A CN102782820A CN 102782820 A CN102782820 A CN 102782820A CN 2011800047820 A CN2011800047820 A CN 2011800047820A CN 201180004782 A CN201180004782 A CN 201180004782A CN 102782820 A CN102782820 A CN 102782820A
Authority
CN
China
Prior art keywords
semiconductor device
forming
oxide film
silicon carbide
carbide semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011800047820A
Other languages
English (en)
Chinese (zh)
Inventor
伊藤里美
盐见弘
并川靖生
和田圭司
岛津充
日吉透
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of CN102782820A publication Critical patent/CN102782820A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6903—Inorganic materials containing silicon
    • H10P14/6905—Inorganic materials containing silicon being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01366—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the semiconductor being silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6504—In-situ cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H10P30/2042—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors into crystalline silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
CN2011800047820A 2010-06-16 2011-02-23 制造碳化硅半导体器件的方法和装置 Pending CN102782820A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010-136866 2010-06-16
JP2010136866A JP2012004269A (ja) 2010-06-16 2010-06-16 炭化珪素半導体装置の製造方法および炭化珪素半導体装置の製造装置
PCT/JP2011/054010 WO2011158528A1 (ja) 2010-06-16 2011-02-23 炭化珪素半導体装置の製造方法および炭化珪素半導体装置の製造装置

Publications (1)

Publication Number Publication Date
CN102782820A true CN102782820A (zh) 2012-11-14

Family

ID=45347940

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011800047820A Pending CN102782820A (zh) 2010-06-16 2011-02-23 制造碳化硅半导体器件的方法和装置

Country Status (8)

Country Link
US (1) US20120214309A1 (enExample)
EP (1) EP2584594A4 (enExample)
JP (1) JP2012004269A (enExample)
KR (1) KR20130076791A (enExample)
CN (1) CN102782820A (enExample)
CA (1) CA2779426A1 (enExample)
TW (1) TW201203391A (enExample)
WO (1) WO2011158528A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106952811A (zh) * 2015-12-11 2017-07-14 丰田自动车株式会社 制造半导体装置的方法
US10600921B2 (en) 2013-11-22 2020-03-24 Fuji Electric Co., Ltd. Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10256094B2 (en) * 2009-08-20 2019-04-09 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch process
JP2012004275A (ja) 2010-06-16 2012-01-05 Sumitomo Electric Ind Ltd 炭化珪素半導体装置の製造方法
US9214516B2 (en) 2012-03-30 2015-12-15 Hitachi, Ltd. Field effect silicon carbide transistor
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
JP6162388B2 (ja) * 2012-11-14 2017-07-12 新日本無線株式会社 炭化珪素半導体装置の製造方法
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
JP6206012B2 (ja) * 2013-09-06 2017-10-04 住友電気工業株式会社 炭化珪素半導体装置
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
JP7774313B2 (ja) * 2020-12-18 2025-11-21 国立大学法人京都大学 ＳｉＣ半導体素子の製造方法及びＳｉＣＭＯＳＦＥＴ
JP7669310B2 (ja) * 2022-03-16 2025-04-28 株式会社東芝 半導体装置の製造方法、半導体装置、インバータ回路、駆動装置、車両、及び、昇降機
JP7822894B2 (ja) * 2022-08-30 2026-03-03 株式会社東芝 半導体装置、及び、半導体装置の製造方法
IT202300010203A1 (it) * 2023-05-19 2024-11-19 Consiglio Nazionale Ricerche Un transistor di potenza per un dispositivo a semiconduttore

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6297172B1 (en) * 1999-06-07 2001-10-02 Sony Corporation Method of forming oxide film
US20070015333A1 (en) * 2005-06-15 2007-01-18 Fuji Electric Holdings Co., Ltd. Method for manufacturing silicon carbide semiconductor devices
JP2007053227A (ja) * 2005-08-18 2007-03-01 Matsushita Electric Ind Co Ltd 半導体素子およびその製造方法
CN101263589A (zh) * 2005-09-13 2008-09-10 大见忠弘 半导体装置的制造方法及半导体制造装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066866A (ja) * 1983-09-24 1985-04-17 Sharp Corp 炭化珪素ｍｏｓ構造の製造方法
JP3261683B2 (ja) 1991-05-31 2002-03-04 忠弘 大見 半導体の洗浄方法及び洗浄装置
JPH06314679A (ja) 1993-04-30 1994-11-08 Sony Corp 半導体基板の洗浄方法
JPH0851110A (ja) * 1994-08-05 1996-02-20 Matsushita Electric Ind Co Ltd 絶縁膜の形成方法
US5787104A (en) * 1995-01-19 1998-07-28 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting element and method for fabricating the same
JPH0952796A (ja) * 1995-08-18 1997-02-25 Fuji Electric Co Ltd ＳｉＣ結晶成長方法およびＳｉＣ半導体装置
JPH10261615A (ja) * 1997-03-17 1998-09-29 Fuji Electric Co Ltd ＳｉＣ半導体の表面モホロジー制御方法およびＳｉＣ半導体薄膜の成長方法
JP3085272B2 (ja) * 1997-12-19 2000-09-04 富士電機株式会社 炭化けい素半導体装置の熱酸化膜形成方法
JP2001332508A (ja) * 2000-05-23 2001-11-30 Matsushita Electric Ind Co Ltd 半導体素子の製造方法
JP3534056B2 (ja) * 2000-08-31 2004-06-07 日産自動車株式会社 炭化珪素半導体装置の製造方法
AU2003221438A1 (en) * 2002-03-19 2003-09-29 Central Research Institute Of Electric Power Industry METHOD FOR PREPARING SiC CRYSTAL AND SiC CRYSTAL
JP2006321707A (ja) * 2005-04-22 2006-11-30 Bridgestone Corp 炭化ケイ素単結晶ウェハ及びその製造方法
JP2008098200A (ja) * 2006-10-05 2008-04-24 Kiyoyoshi Mizuno 成膜体およびその製造方法
US7781312B2 (en) * 2006-12-13 2010-08-24 General Electric Company Silicon carbide devices and method of making
JP5509520B2 (ja) * 2006-12-21 2014-06-04 富士電機株式会社 炭化珪素半導体装置の製造方法
JP5125095B2 (ja) * 2006-12-22 2013-01-23 パナソニック株式会社 ＳｉＣエピタキシャル膜付き基板の製造方法及びＳｉＣエピタキシャル膜付き基板の製造装置
JP5095253B2 (ja) * 2007-03-30 2012-12-12 富士通株式会社 半導体エピタキシャル基板、化合物半導体装置、およびそれらの製造方法
JP4719314B2 (ja) * 2009-01-30 2011-07-06 新日本製鐵株式会社 エピタキシャル炭化珪素単結晶基板及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6297172B1 (en) * 1999-06-07 2001-10-02 Sony Corporation Method of forming oxide film
US20070015333A1 (en) * 2005-06-15 2007-01-18 Fuji Electric Holdings Co., Ltd. Method for manufacturing silicon carbide semiconductor devices
JP2007053227A (ja) * 2005-08-18 2007-03-01 Matsushita Electric Ind Co Ltd 半導体素子およびその製造方法
CN101263589A (zh) * 2005-09-13 2008-09-10 大见忠弘 半导体装置的制造方法及半导体制造装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10600921B2 (en) 2013-11-22 2020-03-24 Fuji Electric Co., Ltd. Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
CN106952811A (zh) * 2015-12-11 2017-07-14 丰田自动车株式会社 制造半导体装置的方法
TWI630645B (zh) * 2015-12-11 2018-07-21 豐田自動車股份有限公司 半導體裝置的製造方法

Also Published As

Publication number Publication date
EP2584594A1 (en) 2013-04-24
JP2012004269A (ja) 2012-01-05
WO2011158528A1 (ja) 2011-12-22
CA2779426A1 (en) 2011-12-22
EP2584594A4 (en) 2014-07-23
US20120214309A1 (en) 2012-08-23
TW201203391A (en) 2012-01-16
KR20130076791A (ko) 2013-07-08

Similar Documents

Publication Publication Date Title
CN102782820A (zh) 制造碳化硅半导体器件的方法和装置
CN101652835B (zh) 具有碳化硅基板的半导体器件的退火方法和半导体器件
US8642476B2 (en) Method for manufacturing silicon carbide semiconductor device
US20120178259A1 (en) Method of cleaning silicon carbide semiconductor and apparatus for cleaning silicon carbide semiconductor
CN100380580C (zh) 硅半导体基板及其制造方法
US20130045592A1 (en) Method for manufacturing silicon carbide semiconductor device and device for manufacturing silicon carbide semiconductor device
CN101336473A (zh) 制造碳化硅半导体器件的方法
JP2009194216A (ja) 半導体装置の製造方法
TW200926303A (en) Semiconductor device manufacturing method and semiconductor device
CN102227000A (zh) 基于超级结的碳化硅mosfet器件及制备方法
CN103718299A (zh) 碳化硅半导体器件的制造方法
JP5529217B2 (ja) 半導体装置の製造方法
CN106536793A (zh) 碳化硅半导体装置的制造方法以及碳化硅半导体装置
JP3963154B2 (ja) 炭化珪素ショットキーバリアダイオードの製造方法
US20110309376A1 (en) Method of cleaning silicon carbide semiconductor, silicon carbide semiconductor, and silicon carbide semiconductor device
JP6696247B2 (ja) 半導体装置の製造方法
CN104508828A (zh) 用于制造碳化硅半导体器件的方法
TWI719085B (zh) 用以清潔砷化銦鎵(或三五族)基板的方法及解決方案
JP6156814B2 (ja) 炭化珪素半導体素子の製造方法
JP6199354B2 (ja) 半導体装置の製造方法
JP5809317B2 (ja) 半導体装置の製造方法
CN117612945A (zh) N沟道金刚石misfet器件及其制备方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20121114