JP2012004269A - 炭化珪素半導体装置の製造方法および炭化珪素半導体装置の製造装置 - Google Patents

炭化珪素半導体装置の製造方法および炭化珪素半導体装置の製造装置 Download PDF

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Publication number
JP2012004269A
JP2012004269A JP2010136866A JP2010136866A JP2012004269A JP 2012004269 A JP2012004269 A JP 2012004269A JP 2010136866 A JP2010136866 A JP 2010136866A JP 2010136866 A JP2010136866 A JP 2010136866A JP 2012004269 A JP2012004269 A JP 2012004269A
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Prior art keywords
semiconductor device
forming
oxide film
silicon carbide
sic semiconductor
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Pending
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JP2010136866A
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English (en)
Japanese (ja)
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JP2012004269A5 (enExample
Inventor
Satomi Ito
里美 伊藤
Hiroshi Shiomi
弘 塩見
Yasuo Namikawa
靖生 並川
Keiji Wada
圭司 和田
Mitsuru Shimazu
充 嶋津
Toru Hiyoshi
透 日吉
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Priority to JP2010136866A priority Critical patent/JP2012004269A/ja
Priority to EP11795436.2A priority patent/EP2584594A4/en
Priority to CA2779426A priority patent/CA2779426A1/en
Priority to US13/503,964 priority patent/US20120214309A1/en
Priority to CN2011800047820A priority patent/CN102782820A/zh
Priority to KR1020127012240A priority patent/KR20130076791A/ko
Priority to PCT/JP2011/054010 priority patent/WO2011158528A1/ja
Priority to TW100116378A priority patent/TW201203391A/zh
Publication of JP2012004269A publication Critical patent/JP2012004269A/ja
Publication of JP2012004269A5 publication Critical patent/JP2012004269A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6903—Inorganic materials containing silicon
    • H10P14/6905—Inorganic materials containing silicon being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01366—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the semiconductor being silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6504—In-situ cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H10P30/2042—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors into crystalline silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2010136866A 2010-06-16 2010-06-16 炭化珪素半導体装置の製造方法および炭化珪素半導体装置の製造装置 Pending JP2012004269A (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2010136866A JP2012004269A (ja) 2010-06-16 2010-06-16 炭化珪素半導体装置の製造方法および炭化珪素半導体装置の製造装置
EP11795436.2A EP2584594A4 (en) 2010-06-16 2011-02-23 METHOD FOR PRODUCING A SILICON CARBIDE SEMICONDUCTOR COMPONENT AND DEVICE FOR PRODUCING A SILICON CARBIDE SEMICONDUCTOR COMPONENT
CA2779426A CA2779426A1 (en) 2010-06-16 2011-02-23 Method and apparatus of fabricating silicon carbide semiconductor device
US13/503,964 US20120214309A1 (en) 2010-06-16 2011-02-23 Method and apparatus of fabricating silicon carbide semiconductor device
CN2011800047820A CN102782820A (zh) 2010-06-16 2011-02-23 制造碳化硅半导体器件的方法和装置
KR1020127012240A KR20130076791A (ko) 2010-06-16 2011-02-23 탄화규소 반도체 장치의 제조 방법 및 탄화규소 반도체 장치의 제조 장치
PCT/JP2011/054010 WO2011158528A1 (ja) 2010-06-16 2011-02-23 炭化珪素半導体装置の製造方法および炭化珪素半導体装置の製造装置
TW100116378A TW201203391A (en) 2010-06-16 2011-05-10 Method for manufacturing silicon carbide semiconductor device and apparatus for manufacturing silicon carbide semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010136866A JP2012004269A (ja) 2010-06-16 2010-06-16 炭化珪素半導体装置の製造方法および炭化珪素半導体装置の製造装置

Publications (2)

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JP2012004269A true JP2012004269A (ja) 2012-01-05
JP2012004269A5 JP2012004269A5 (enExample) 2013-04-04

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JP2010136866A Pending JP2012004269A (ja) 2010-06-16 2010-06-16 炭化珪素半導体装置の製造方法および炭化珪素半導体装置の製造装置

Country Status (8)

Country Link
US (1) US20120214309A1 (enExample)
EP (1) EP2584594A4 (enExample)
JP (1) JP2012004269A (enExample)
KR (1) KR20130076791A (enExample)
CN (1) CN102782820A (enExample)
CA (1) CA2779426A1 (enExample)
TW (1) TW201203391A (enExample)
WO (1) WO2011158528A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8642476B2 (en) 2010-06-16 2014-02-04 Sumitomo Electric Industries, Ltd. Method for manufacturing silicon carbide semiconductor device
JP2014099495A (ja) * 2012-11-14 2014-05-29 New Japan Radio Co Ltd 炭化珪素半導体装置の製造方法

Families Citing this family (16)

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US10256094B2 (en) * 2009-08-20 2019-04-09 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch process
US9214516B2 (en) 2012-03-30 2015-12-15 Hitachi, Ltd. Field effect silicon carbide transistor
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
JP6206012B2 (ja) * 2013-09-06 2017-10-04 住友電気工業株式会社 炭化珪素半導体装置
JP6222771B2 (ja) 2013-11-22 2017-11-01 国立研究開発法人産業技術総合研究所 炭化珪素半導体装置の製造方法
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
JP6314965B2 (ja) * 2015-12-11 2018-04-25 トヨタ自動車株式会社 半導体装置の製造方法
JP7774313B2 (ja) * 2020-12-18 2025-11-21 国立大学法人京都大学 ＳｉＣ半導体素子の製造方法及びＳｉＣＭＯＳＦＥＴ
JP7669310B2 (ja) * 2022-03-16 2025-04-28 株式会社東芝 半導体装置の製造方法、半導体装置、インバータ回路、駆動装置、車両、及び、昇降機
JP7822894B2 (ja) * 2022-08-30 2026-03-03 株式会社東芝 半導体装置、及び、半導体装置の製造方法
IT202300010203A1 (it) * 2023-05-19 2024-11-19 Consiglio Nazionale Ricerche Un transistor di potenza per un dispositivo a semiconduttore

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JPH11186256A (ja) * 1997-12-19 1999-07-09 Fuji Electric Co Ltd 炭化けい素半導体装置の熱酸化膜形成方法
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JPS6066866A (ja) * 1983-09-24 1985-04-17 Sharp Corp 炭化珪素ｍｏｓ構造の製造方法
JPH0952796A (ja) * 1995-08-18 1997-02-25 Fuji Electric Co Ltd ＳｉＣ結晶成長方法およびＳｉＣ半導体装置
JPH11186256A (ja) * 1997-12-19 1999-07-09 Fuji Electric Co Ltd 炭化けい素半導体装置の熱酸化膜形成方法
JP2000349081A (ja) * 1999-06-07 2000-12-15 Sony Corp 酸化膜形成方法
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JP2006351744A (ja) * 2005-06-15 2006-12-28 Fuji Electric Holdings Co Ltd 炭化珪素半導体装置の製造方法
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8642476B2 (en) 2010-06-16 2014-02-04 Sumitomo Electric Industries, Ltd. Method for manufacturing silicon carbide semiconductor device
JP2014099495A (ja) * 2012-11-14 2014-05-29 New Japan Radio Co Ltd 炭化珪素半導体装置の製造方法

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Publication number Publication date
EP2584594A1 (en) 2013-04-24
WO2011158528A1 (ja) 2011-12-22
CA2779426A1 (en) 2011-12-22
CN102782820A (zh) 2012-11-14
EP2584594A4 (en) 2014-07-23
US20120214309A1 (en) 2012-08-23
TW201203391A (en) 2012-01-16
KR20130076791A (ko) 2013-07-08

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