CN102770774B - 静态电流(iddq)指示及测试装置和方法 - Google Patents

静态电流(iddq)指示及测试装置和方法 Download PDF

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Publication number
CN102770774B
CN102770774B CN201180007327.6A CN201180007327A CN102770774B CN 102770774 B CN102770774 B CN 102770774B CN 201180007327 A CN201180007327 A CN 201180007327A CN 102770774 B CN102770774 B CN 102770774B
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CN
China
Prior art keywords
iddq
electronic device
ground node
electrically coupled
ground
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN201180007327.6A
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English (en)
Chinese (zh)
Other versions
CN102770774A (zh
Inventor
N·A·杰瑞格
I·S·坎达尔
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NXP USA Inc
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Freescale Semiconductor Inc
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Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of CN102770774A publication Critical patent/CN102770774A/zh
Application granted granted Critical
Publication of CN102770774B publication Critical patent/CN102770774B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/30Marginal testing, e.g. by varying supply voltage
    • G01R31/3004Current or voltage test
    • G01R31/3008Quiescent current [IDDQ] test or leakage current test
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155Manufacturing circuit on or in base

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
CN201180007327.6A 2010-01-29 2011-01-19 静态电流(iddq)指示及测试装置和方法 Expired - Fee Related CN102770774B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/696,257 2010-01-29
US12/696,257 US8476917B2 (en) 2010-01-29 2010-01-29 Quiescent current (IDDQ) indication and testing apparatus and methods
PCT/US2011/021711 WO2011094103A2 (en) 2010-01-29 2011-01-19 Quiescent current (iddq) indication and testing apparatus and methods

Publications (2)

Publication Number Publication Date
CN102770774A CN102770774A (zh) 2012-11-07
CN102770774B true CN102770774B (zh) 2015-04-08

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180007327.6A Expired - Fee Related CN102770774B (zh) 2010-01-29 2011-01-19 静态电流(iddq)指示及测试装置和方法

Country Status (5)

Country Link
US (1) US8476917B2 (enExample)
EP (1) EP2531866A2 (enExample)
JP (1) JP5785194B2 (enExample)
CN (1) CN102770774B (enExample)
WO (1) WO2011094103A2 (enExample)

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* Cited by examiner, † Cited by third party
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US9103877B2 (en) * 2012-04-03 2015-08-11 Sandisk Technologies Inc. Apparatus and method for IDDQ tests
US9866133B2 (en) 2014-01-10 2018-01-09 Astec International Limited Control circuits and methods for regulating output voltages using multiple and/or adjustable reference voltages
US9698694B2 (en) 2014-01-10 2017-07-04 Astec International Limited Control circuits and methods for regulating output voltages based on adjustable references voltages
CN104897954A (zh) * 2015-05-22 2015-09-09 成都前锋电子仪器有限责任公司 多路智能燃气表静态电流自动检测装置
CN105067928B (zh) * 2015-08-11 2018-01-30 惠州华阳通用电子有限公司 一种汽车电子产品暗电流自动化测试方法及装置
US10139448B2 (en) 2016-08-31 2018-11-27 Nxp Usa, Inc. Scan circuitry with IDDQ verification
TWI628448B (zh) * 2017-03-07 2018-07-01 慧榮科技股份有限公司 電路測試方法
US11223289B2 (en) 2020-01-17 2022-01-11 Astec International Limited Regulated switched mode power supplies having adjustable output voltages
US11398287B2 (en) * 2020-03-24 2022-07-26 Sandisk Technologies Llc Input/output circuit internal loopback

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US5850404A (en) * 1995-01-20 1998-12-15 Nec Corporation Fault block detecting system using abnormal current
US5889789A (en) * 1995-06-30 1999-03-30 Nec Coporation Fault mode estimating system using abnormal current and V-I characteristics
US6127838A (en) * 1997-03-21 2000-10-03 U.S. Philips Corporation IDDQ testable programmable logic arrays
CN101059537A (zh) * 2006-04-18 2007-10-24 聚积科技股份有限公司 静默电流侦测方法及其装置
CN101533043A (zh) * 2009-04-20 2009-09-16 上海汽车集团股份有限公司 车辆静态电流测试系统

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US5773990A (en) 1995-09-29 1998-06-30 Megatest Corporation Integrated circuit test power supply
JP3641517B2 (ja) * 1995-10-05 2005-04-20 株式会社ルネサステクノロジ 半導体装置
DE69733789T2 (de) * 1996-06-05 2006-06-01 Interuniversitair Micro-Electronica Centrum Vzw Hochauflösendes Stromversorgungsprüfsystem
JP2950313B2 (ja) * 1998-01-19 1999-09-20 日本電気株式会社 半導体集積回路の入力バッファ回路
US6313657B1 (en) * 1998-12-24 2001-11-06 Advantest Corporation IC testing apparatus and testing method using same
US6496028B1 (en) * 1999-05-11 2002-12-17 Interuniversitair Micro-Elektronica Centrum Method and apparatus for testing electronic devices
US6859058B2 (en) 1999-05-11 2005-02-22 Interuniversitair Microelektronica Centrum (Imec Uzw) Method and apparatus for testing electronic devices
JP3430137B2 (ja) * 2000-09-27 2003-07-28 エヌイーシーマイクロシステム株式会社 Iddqテスト回路
CA2407766C (en) 2000-11-22 2010-06-29 Ecole De Technologie Superieure Vddq integrated circuit testing system and method
JP3720271B2 (ja) * 2001-03-22 2005-11-24 株式会社ルネサステクノロジ 半導体集積回路装置
WO2003023358A2 (en) 2001-09-10 2003-03-20 University Of North Carolina At Charlotte Methods and apparatus for testing electronic circuits
DE10145021C1 (de) * 2001-09-13 2003-04-30 Infineon Technologies Ag Integrierte Schaltung mit einer Strommesseinheit und ein Verfahren zum Messen eines Stromes
JP2003156534A (ja) * 2001-11-21 2003-05-30 Hitachi Ltd 半導体集積回路
AU2003255888A1 (en) 2002-09-16 2004-04-30 Koninklijke Philips Electronics N.V. A method and apparatus for iddq measuring
JP4346373B2 (ja) * 2002-10-31 2009-10-21 株式会社ルネサステクノロジ 半導体装置
WO2004104605A1 (ja) 2003-05-21 2004-12-02 Advantest Corporation 電流測定装置及び試験装置
US6930500B2 (en) 2003-08-01 2005-08-16 Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College IDDQ testing of CMOS mixed-signal integrated circuits
JP4557526B2 (ja) * 2003-11-10 2010-10-06 パナソニック株式会社 半導体集積回路及び半導体集積回路の故障検出方法
JP2005164467A (ja) * 2003-12-04 2005-06-23 Matsushita Electric Ind Co Ltd Iddq測定回路
US7282905B2 (en) 2004-12-10 2007-10-16 Texas Instruments Incorporated System and method for IDDQ measurement in system on a chip (SOC) design
JP4627446B2 (ja) 2005-02-25 2011-02-09 株式会社アドバンテスト 電流測定装置、試験装置、電流測定方法、および試験方法
WO2007049331A1 (ja) * 2005-10-25 2007-05-03 Renesas Technology Corp. 接続装置、iddqテスト方法及び半導体集積回路
US7274203B2 (en) * 2005-10-25 2007-09-25 Freescale Semiconductor, Inc. Design-for-test circuit for low pin count devices
ATE465419T1 (de) * 2006-09-06 2010-05-15 Nxp Bv Prüfbare integrierte schaltung und ic- prüfverfahren
US8044676B2 (en) * 2008-06-11 2011-10-25 Infineon Technologies Ag IDDQ testing
US7688100B2 (en) 2008-06-30 2010-03-30 Freescale Semiconductor, Inc. Integrated circuit and a method for measuring a quiescent current of a module
US8278960B2 (en) * 2009-06-19 2012-10-02 Freescale Semiconductor, Inc. Method and circuit for measuring quiescent current
DE102009037649B4 (de) * 2009-08-14 2017-11-23 Texas Instruments Deutschland Gmbh Elektronische Vorrichtung und Verfahren zur Induktivitätsstrommessung

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5850404A (en) * 1995-01-20 1998-12-15 Nec Corporation Fault block detecting system using abnormal current
US5889789A (en) * 1995-06-30 1999-03-30 Nec Coporation Fault mode estimating system using abnormal current and V-I characteristics
US6127838A (en) * 1997-03-21 2000-10-03 U.S. Philips Corporation IDDQ testable programmable logic arrays
CN101059537A (zh) * 2006-04-18 2007-10-24 聚积科技股份有限公司 静默电流侦测方法及其装置
CN101533043A (zh) * 2009-04-20 2009-09-16 上海汽车集团股份有限公司 车辆静态电流测试系统

Also Published As

Publication number Publication date
US20110187396A1 (en) 2011-08-04
JP2013518285A (ja) 2013-05-20
EP2531866A2 (en) 2012-12-12
WO2011094103A2 (en) 2011-08-04
US8476917B2 (en) 2013-07-02
WO2011094103A3 (en) 2011-11-03
JP5785194B2 (ja) 2015-09-24
CN102770774A (zh) 2012-11-07

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CP01 Change in the name or title of a patent holder

Address after: Texas in the United States

Patentee after: NXP USA, Inc.

Address before: Texas in the United States

Patentee before: FREESCALE SEMICONDUCTOR, Inc.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150408