CN102725373B - 用于抛光大体积硅的组合物及方法 - Google Patents

用于抛光大体积硅的组合物及方法 Download PDF

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Publication number
CN102725373B
CN102725373B CN201080041294.2A CN201080041294A CN102725373B CN 102725373 B CN102725373 B CN 102725373B CN 201080041294 A CN201080041294 A CN 201080041294A CN 102725373 B CN102725373 B CN 102725373B
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China
Prior art keywords
polishing composition
weight
acid
silicon
polishing
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CN201080041294.2A
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English (en)
Chinese (zh)
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CN102725373A (zh
Inventor
B.雷斯
J.克拉克
L.琼斯
J.吉利兰
M.怀特
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CMC Materials LLC
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Cabot Microelectronics Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201080041294.2A 2009-09-16 2010-09-13 用于抛光大体积硅的组合物及方法 Active CN102725373B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/462,638 2009-09-16
US12/462,638 US8883034B2 (en) 2009-09-16 2009-09-16 Composition and method for polishing bulk silicon
PCT/US2010/048587 WO2011034808A2 (en) 2009-09-16 2010-09-13 Composition and method for polishing bulk silicon

Publications (2)

Publication Number Publication Date
CN102725373A CN102725373A (zh) 2012-10-10
CN102725373B true CN102725373B (zh) 2015-05-06

Family

ID=43729582

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Application Number Title Priority Date Filing Date
CN201080041294.2A Active CN102725373B (zh) 2009-09-16 2010-09-13 用于抛光大体积硅的组合物及方法

Country Status (9)

Country Link
US (2) US8883034B2 (enExample)
EP (1) EP2478064B1 (enExample)
JP (1) JP5749719B2 (enExample)
KR (1) KR101503127B1 (enExample)
CN (1) CN102725373B (enExample)
MY (1) MY169952A (enExample)
SG (1) SG179158A1 (enExample)
TW (1) TWI484007B (enExample)
WO (1) WO2011034808A2 (enExample)

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US8815110B2 (en) * 2009-09-16 2014-08-26 Cabot Microelectronics Corporation Composition and method for polishing bulk silicon
US8697576B2 (en) * 2009-09-16 2014-04-15 Cabot Microelectronics Corporation Composition and method for polishing polysilicon
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JP2013004839A (ja) * 2011-06-20 2013-01-07 Shin Etsu Handotai Co Ltd シリコンウェーハの研磨方法
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WO2015037311A1 (ja) * 2013-09-10 2015-03-19 日立化成株式会社 スラリー、研磨液セット、研磨液、基体の研磨方法及び基体
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JP6250454B2 (ja) * 2014-03-27 2017-12-20 株式会社フジミインコーポレーテッド シリコン材料研磨用組成物
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JPWO2016143323A1 (ja) * 2015-03-11 2017-12-21 株式会社フジミインコーポレーテッド 研磨用組成物及びシリコン基板の研磨方法
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US20190153262A1 (en) * 2017-11-20 2019-05-23 Cabot Microelectronics Corporation Composition and method for polishing memory hard disks exhibiting reduced surface scratching
JP6572288B2 (ja) * 2017-11-22 2019-09-04 株式会社フジミインコーポレーテッド シリコン材料研磨用組成物
JP7575878B2 (ja) * 2020-03-24 2024-10-30 株式会社フジミインコーポレーテッド 研磨用組成物、その製造方法、および研磨方法
TWI804925B (zh) * 2020-07-20 2023-06-11 美商Ｃｍｃ材料股份有限公司 矽晶圓拋光組合物及方法
CN113182938B (zh) * 2021-03-01 2023-02-03 燕山大学 金刚石复相材料表面的加工方法

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Also Published As

Publication number Publication date
SG179158A1 (en) 2012-05-30
EP2478064A4 (en) 2017-07-05
EP2478064B1 (en) 2020-02-12
TW201129659A (en) 2011-09-01
US20110062376A1 (en) 2011-03-17
MY169952A (en) 2019-06-19
TWI484007B (zh) 2015-05-11
CN102725373A (zh) 2012-10-10
JP2013505584A (ja) 2013-02-14
US9701871B2 (en) 2017-07-11
KR20120064706A (ko) 2012-06-19
EP2478064A2 (en) 2012-07-25
KR101503127B1 (ko) 2015-03-16
JP5749719B2 (ja) 2015-07-15
US20150028254A1 (en) 2015-01-29
US8883034B2 (en) 2014-11-11
WO2011034808A2 (en) 2011-03-24
WO2011034808A3 (en) 2011-07-28

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