CN102626895B - 基于光谱的监测化学机械研磨的装置及方法 - Google Patents

基于光谱的监测化学机械研磨的装置及方法 Download PDF

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Publication number
CN102626895B
CN102626895B CN201210109226.6A CN201210109226A CN102626895B CN 102626895 B CN102626895 B CN 102626895B CN 201210109226 A CN201210109226 A CN 201210109226A CN 102626895 B CN102626895 B CN 102626895B
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China
Prior art keywords
spectrum
grinding
base material
window
terminal
Prior art date
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CN201210109226.6A
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English (en)
Chinese (zh)
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CN102626895A (zh
Inventor
D·J·本韦格努
J·D·戴维
B·斯韦德克
H·Q·李
L·卡鲁皮亚
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Applied Materials Inc
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Applied Materials Inc
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Publication date
Priority claimed from US11/213,674 external-priority patent/US7226339B2/en
Priority claimed from US11/261,742 external-priority patent/US7406394B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN102626895A publication Critical patent/CN102626895A/zh
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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/005Control means for lapping machines or devices
    • B24B37/013Devices or means for detecting lapping completion
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/205Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/34Accessories
    • B24B37/345Feeding, loading or unloading work specially adapted to lapping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/64Manufacture or treatment of solid state devices other than semiconductor devices, or of parts thereof, not peculiar to a single device provided for in groups H01L31/00 - H10K99/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
CN201210109226.6A 2005-08-22 2006-08-21 基于光谱的监测化学机械研磨的装置及方法 Active CN102626895B (zh)

Applications Claiming Priority (13)

Application Number Priority Date Filing Date Title
US71068205P 2005-08-22 2005-08-22
US60/710,682 2005-08-22
US11/213,344 2005-08-26
US11/213,674 US7226339B2 (en) 2005-08-22 2005-08-26 Spectrum based endpointing for chemical mechanical polishing
US11/213,344 US7764377B2 (en) 2005-08-22 2005-08-26 Spectrum based endpointing for chemical mechanical polishing
US11/213,675 US7306507B2 (en) 2005-08-22 2005-08-26 Polishing pad assembly with glass or crystalline window
US11/213,674 2005-08-26
US11/213,675 2005-08-26
US11/261,742 2005-10-28
US11/261,742 US7406394B2 (en) 2005-08-22 2005-10-28 Spectra based endpointing for chemical mechanical polishing
US74776806P 2006-05-19 2006-05-19
US60/747,768 2006-05-19
CN2006800304049A CN101242931B (zh) 2005-08-22 2006-08-21 基于光谱的监测化学机械研磨的装置及方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN2006800304049A Division CN101242931B (zh) 2005-08-22 2006-08-21 基于光谱的监测化学机械研磨的装置及方法

Publications (2)

Publication Number Publication Date
CN102626895A CN102626895A (zh) 2012-08-08
CN102626895B true CN102626895B (zh) 2016-05-25

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CN201210109226.6A Active CN102626895B (zh) 2005-08-22 2006-08-21 基于光谱的监测化学机械研磨的装置及方法
CN201610227541.7A Active CN105773398B (zh) 2005-08-22 2006-08-21 基于光谱的监测化学机械研磨的装置及方法
CN201410667878.0A Active CN104526536B (zh) 2005-08-22 2006-08-21 基于光谱的监测化学机械研磨的装置及方法

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CN201410667878.0A Active CN104526536B (zh) 2005-08-22 2006-08-21 基于光谱的监测化学机械研磨的装置及方法

Country Status (4)

Country Link
JP (6) JP5622807B2 (ko)
KR (5) KR101593927B1 (ko)
CN (3) CN102626895B (ko)
TW (1) TWI361454B (ko)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI445098B (zh) * 2007-02-23 2014-07-11 Applied Materials Inc 使用光譜來判斷研磨終點
JP5968783B2 (ja) * 2009-11-03 2016-08-10 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated スペクトルの等高線図のピーク位置と時間の関係を使用する終点方法
TWI496661B (zh) * 2010-04-28 2015-08-21 Applied Materials Inc 用於光學監測之參考光譜的自動產生
US9579767B2 (en) 2010-04-28 2017-02-28 Applied Materials, Inc. Automatic generation of reference spectra for optical monitoring of substrates
US8190285B2 (en) * 2010-05-17 2012-05-29 Applied Materials, Inc. Feedback for polishing rate correction in chemical mechanical polishing
WO2012148716A2 (en) * 2011-04-28 2012-11-01 Applied Materials, Inc. Varying coefficients and functions for polishing control
US10012494B2 (en) * 2013-10-25 2018-07-03 Applied Materials, Inc. Grouping spectral data from polishing substrates
US9997420B2 (en) * 2013-12-27 2018-06-12 Taiwan Semiconductor Manufacturing Company Limited Method and/or system for chemical mechanical planarization (CMP)
US9352440B2 (en) * 2014-04-30 2016-05-31 Applied Materials, Inc. Serial feature tracking for endpoint detection
KR102447790B1 (ko) * 2014-12-12 2022-09-27 어플라이드 머티어리얼스, 인코포레이티드 Cmp 동안의 인 시튜 부산물 제거 및 플래튼 냉각을 위한 시스템 및 프로세스
CN104802091A (zh) * 2015-05-19 2015-07-29 肥西县三星玻璃有限公司 一种玻璃磨边机
JP2017064899A (ja) * 2015-10-01 2017-04-06 株式会社荏原製作所 研磨装置
KR101870701B1 (ko) 2016-08-01 2018-06-25 에스케이실트론 주식회사 폴리싱 측정 장치 및 그의 연마 시간 제어 방법, 및 그를 포함한 폴리싱 제어 시스템
US10286517B2 (en) 2017-08-08 2019-05-14 Micron Technology, Inc. Polishing apparatuses
CN107520740A (zh) * 2017-09-18 2017-12-29 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) 一种化学机械抛光中光谱终点的检测方法、装置及系统
KR101890331B1 (ko) * 2017-10-16 2018-08-21 에스케이씨 주식회사 누수 방지된 연마패드 및 이의 제조방법
CN107900788B (zh) * 2017-11-24 2020-04-24 上海华力微电子有限公司 一种改善层间介质研磨工艺厚度稳定性的方法
KR102527659B1 (ko) 2017-11-27 2023-05-03 삼성전자주식회사 공기청정기
US11577356B2 (en) 2018-09-24 2023-02-14 Applied Materials, Inc. Machine vision as input to a CMP process control algorithm
US11780047B2 (en) * 2020-06-24 2023-10-10 Applied Materials, Inc. Determination of substrate layer thickness with polishing pad wear compensation
CN112025547B (zh) * 2020-09-15 2021-11-02 泉芯集成电路制造(济南)有限公司 激光投影虚拟校正设备和方法
CN113478382B (zh) * 2021-07-20 2022-11-04 湖北鼎汇微电子材料有限公司 检测窗口、化学机械抛光垫及抛光系统

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000310512A (ja) * 1999-04-28 2000-11-07 Hitachi Ltd 薄膜の膜厚計測方法及びその装置並びにそれを用いた薄膜デバイスの製造方法及びその装置
JP2002359217A (ja) * 2001-05-31 2002-12-13 Omron Corp 研磨終点検出方法およびその装置
TW541233B (en) * 1999-03-18 2003-07-11 Speedfam Ipec Corp Method and apparatus for endpoint detection for chemical mechanical polishing
CN1500290A (zh) * 1999-12-27 2004-05-26 ������������ʽ���� 抛光状态监视方法、抛光状态监视装置、抛光设备、加工晶片、半导体器件制造方法和半导体器件
TW593969B (en) * 2000-03-29 2004-06-21 Nikon Corp Process end point detection apparatus and method, polishing apparatus, semiconductor device manufacturing method, and recording medium recorded with signal processing program

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0286128U (ko) * 1988-12-21 1990-07-09
JP3300217B2 (ja) * 1996-01-29 2002-07-08 大日本スクリーン製造株式会社 研磨処理モニタ方法および装置
JP3327175B2 (ja) * 1997-07-18 2002-09-24 株式会社ニコン 検知部及びこの検知部を具えたウェハ研磨装置
JP4460659B2 (ja) * 1997-10-22 2010-05-12 株式会社ルネサステクノロジ 薄膜の膜厚計測方法及びその装置並びにそれを用いた薄膜デバイスの製造方法及びその製造装置
JP3371775B2 (ja) * 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
US6124141A (en) * 1998-01-07 2000-09-26 International Business Machines Corporation Non-destructive method and device for measuring the depth of a buried interface
US6271047B1 (en) * 1998-05-21 2001-08-07 Nikon Corporation Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same
JP3395663B2 (ja) * 1998-09-03 2003-04-14 株式会社ニコン 検出方法及び検出装置及び研磨装置及び研磨方法
US6106662A (en) * 1998-06-08 2000-08-22 Speedfam-Ipec Corporation Method and apparatus for endpoint detection for chemical mechanical polishing
US6296189B1 (en) * 1998-08-26 2001-10-02 Spectra Science Corporation. Methods and apparatus employing multi-spectral imaging for the remote identification and sorting of objects
JP2000254860A (ja) * 1999-03-08 2000-09-19 Nikon Corp 研磨装置
KR100435246B1 (ko) * 1999-03-31 2004-06-11 가부시키가이샤 니콘 연마체, 연마장치, 연마장치의 조정방법, 연마막 두께또는 연마종점의 측정방법, 및 반도체 디바이스의 제조방법
US6334807B1 (en) * 1999-04-30 2002-01-01 International Business Machines Corporation Chemical mechanical polishing in-situ end point system
US6146242A (en) * 1999-06-11 2000-11-14 Strasbaugh, Inc. Optical view port for chemical mechanical planarization endpoint detection
US6171181B1 (en) * 1999-08-17 2001-01-09 Rodel Holdings, Inc. Molded polishing pad having integral window
JP4487375B2 (ja) * 2000-03-30 2010-06-23 株式会社ニコン パターンのモデル化方法、膜厚測定方法、工程状態判定方法、膜厚測定装置、工程状態判定装置、研磨装置、及び半導体デバイスの製造方法
JP2001287159A (ja) * 2000-04-05 2001-10-16 Nikon Corp 表面状態測定方法及び測定装置及び研磨装置及び半導体デバイス製造方法
JP2002116163A (ja) * 2000-10-05 2002-04-19 Jeol Ltd 表面分析装置におけるスペクトルピーク位置の補正方法
JP3804064B2 (ja) * 2001-12-04 2006-08-02 株式会社東京精密 ウェーハ研磨装置の研磨終点検出方法及び装置
JP2002025960A (ja) * 2000-12-28 2002-01-25 Wallace T Y Tang 薄膜を監視するための方法および装置
US6491569B2 (en) * 2001-04-19 2002-12-10 Speedfam-Ipec Corporation Method and apparatus for using optical reflection data to obtain a continuous predictive signal during CMP
US6676482B2 (en) * 2001-04-20 2004-01-13 Speedfam-Ipec Corporation Learning method and apparatus for predictive determination of endpoint during chemical mechanical planarization using sparse sampling
JP3932836B2 (ja) * 2001-07-27 2007-06-20 株式会社日立製作所 薄膜の膜厚計測方法及びその装置並びにそれを用いたデバイスの製造方法
US6618130B2 (en) 2001-08-28 2003-09-09 Speedfam-Ipec Corporation Method and apparatus for optical endpoint detection during chemical mechanical polishing
JP2003080451A (ja) * 2001-09-07 2003-03-18 Tokyo Seimitsu Co Ltd 研磨装置及び研磨方法
US6688945B2 (en) * 2002-03-25 2004-02-10 Macronix International Co. Ltd. CMP endpoint detection system
JP2004012302A (ja) * 2002-06-07 2004-01-15 Hitachi Ltd 膜厚分布計測方法及びその装置
JP2004017229A (ja) * 2002-06-18 2004-01-22 Shimadzu Corp 基板研磨装置
JP4542324B2 (ja) * 2002-10-17 2010-09-15 株式会社荏原製作所 研磨状態監視装置及びポリッシング装置
JP2004165473A (ja) * 2002-11-14 2004-06-10 Seiko Epson Corp Cmp装置、cmp研磨方法、半導体装置及びその製造方法
US6931870B2 (en) * 2002-12-04 2005-08-23 Samsung Electronics Co., Ltd. Time division multi-cycle type cooling apparatus and method for controlling the same
JP2004343090A (ja) * 2003-04-22 2004-12-02 Jsr Corp 研磨パッドおよび半導体ウェハの研磨方法
US20040242121A1 (en) * 2003-05-16 2004-12-02 Kazuto Hirokawa Substrate polishing apparatus
JP2005011977A (ja) * 2003-06-18 2005-01-13 Ebara Corp 基板研磨装置および基板研磨方法
JP2005033012A (ja) * 2003-07-14 2005-02-03 Seiko Epson Corp 研磨装置および半導体装置の製造方法
US20050026542A1 (en) 2003-07-31 2005-02-03 Tezer Battal Detection system for chemical-mechanical planarization tool
JP4464642B2 (ja) 2003-09-10 2010-05-19 株式会社荏原製作所 研磨状態監視装置、研磨状態監視方法、研磨装置及び研磨方法
JP2005101114A (ja) * 2003-09-22 2005-04-14 Lam Res Corp 動的更新参照を介した光学干渉を用いた金属薄膜状態の境界のインシチューな検出
US7798309B2 (en) * 2003-11-13 2010-09-21 Applied Materials, Inc. Stabilizing substrate carriers during overhead transport

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW541233B (en) * 1999-03-18 2003-07-11 Speedfam Ipec Corp Method and apparatus for endpoint detection for chemical mechanical polishing
JP2000310512A (ja) * 1999-04-28 2000-11-07 Hitachi Ltd 薄膜の膜厚計測方法及びその装置並びにそれを用いた薄膜デバイスの製造方法及びその装置
CN1500290A (zh) * 1999-12-27 2004-05-26 ������������ʽ���� 抛光状态监视方法、抛光状态监视装置、抛光设备、加工晶片、半导体器件制造方法和半导体器件
EP1176631B1 (en) * 1999-12-27 2006-03-22 Nikon Corporation Method and apparatus for monitoring polishing state, polishing device, process wafer, semiconductor device, and method of manufacturing semiconductor device
TW593969B (en) * 2000-03-29 2004-06-21 Nikon Corp Process end point detection apparatus and method, polishing apparatus, semiconductor device manufacturing method, and recording medium recorded with signal processing program
JP2002359217A (ja) * 2001-05-31 2002-12-13 Omron Corp 研磨終点検出方法およびその装置

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KR20130041396A (ko) 2013-04-24
JP5622806B2 (ja) 2014-11-12
KR101423579B1 (ko) 2014-07-25
JP6438288B2 (ja) 2018-12-12
JP5622807B2 (ja) 2014-11-12
JP2013048259A (ja) 2013-03-07
JP2012256912A (ja) 2012-12-27
CN102626895A (zh) 2012-08-08
CN104526536B (zh) 2017-09-22
JP6052906B2 (ja) 2016-12-27
KR20130041397A (ko) 2013-04-24
KR101398567B1 (ko) 2014-05-22
JP2012256913A (ja) 2012-12-27
CN105773398A (zh) 2016-07-20
JP2012256911A (ja) 2012-12-27
JP2015079984A (ja) 2015-04-23
JP6047327B2 (ja) 2016-12-21
TW200717637A (en) 2007-05-01
KR101593927B1 (ko) 2016-02-15
JP2015077684A (ja) 2015-04-23
KR20130042059A (ko) 2013-04-25
TWI361454B (en) 2012-04-01
KR101521414B1 (ko) 2015-05-19
KR20140019484A (ko) 2014-02-14
CN105773398B (zh) 2019-11-19
CN104526536A (zh) 2015-04-22
JP5624099B2 (ja) 2014-11-12
KR101398570B1 (ko) 2014-05-22
KR20140140598A (ko) 2014-12-09

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