CN102623328B - 用水蒸气或蒸汽处理基材的方法 - Google Patents

用水蒸气或蒸汽处理基材的方法 Download PDF

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Publication number
CN102623328B
CN102623328B CN201110404378.4A CN201110404378A CN102623328B CN 102623328 B CN102623328 B CN 102623328B CN 201110404378 A CN201110404378 A CN 201110404378A CN 102623328 B CN102623328 B CN 102623328B
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Prior art keywords
steam
composition
sulfuric acid
temperature
base material
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Chinese (zh)
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CN102623328A (zh
Inventor
J·W·巴特鲍
D·德克拉克
R·E·威廉姆森
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Theil Electric Manufacturing and Engineering Co.,Ltd. in the United States
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FSI International Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201110404378.4A 2007-05-18 2008-05-15 用水蒸气或蒸汽处理基材的方法 Active CN102623328B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US93072007P 2007-05-18 2007-05-18
US60/930,720 2007-05-18

Related Parent Applications (1)

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CN200880016565A Division CN101681827A (zh) 2007-05-18 2008-05-15 用水蒸气或蒸汽处理基材的方法

Publications (2)

Publication Number Publication Date
CN102623328A CN102623328A (zh) 2012-08-01
CN102623328B true CN102623328B (zh) 2014-11-26

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CN201110404378.4A Active CN102623328B (zh) 2007-05-18 2008-05-15 用水蒸气或蒸汽处理基材的方法
CN200880016565A Pending CN101681827A (zh) 2007-05-18 2008-05-15 用水蒸气或蒸汽处理基材的方法

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US (2) US7819984B2 (enExample)
JP (2) JP5199339B2 (enExample)
KR (2) KR101532224B1 (enExample)
CN (2) CN102623328B (enExample)
TW (1) TWI529787B (enExample)
WO (1) WO2008143909A1 (enExample)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100993311B1 (ko) 2005-04-01 2010-11-09 에프에스아이 인터내쇼날 인크. 하나 이상의 처리 유체로 마이크로일렉트로닉 작업물을 처리하는 장치용 이동 및 중첩 가능한 배플들을 포함하는 소형 덕트 시스템
JP4728402B2 (ja) 2005-11-23 2011-07-20 エフエスアイ インターナショナル インコーポレーテッド 支持体から物質を除去する方法
CN101484974B (zh) 2006-07-07 2013-11-06 Fsi国际公司 用于处理微电子工件的设备和方法以及遮挡结构
DE102007030957A1 (de) * 2007-07-04 2009-01-08 Siltronic Ag Verfahren zum Reinigen einer Halbleiterscheibe mit einer Reinigungslösung
WO2009020524A1 (en) 2007-08-07 2009-02-12 Fsi International, Inc. Rinsing methodologies for barrier plate and venturi containment systems in tools used to process microelectronic workpieces with one or more treatment fluids, and related apparatuses
CN102683249B (zh) 2008-05-09 2015-06-17 泰尔Fsi公司 用于处理微电子工件的系统
US20100124410A1 (en) * 2008-11-18 2010-05-20 Fsi International, Inc. System for supplying water vapor in semiconductor wafer treatment
US20100155026A1 (en) * 2008-12-19 2010-06-24 Walther Steven R Condensible gas cooling system
MY159780A (en) * 2009-08-19 2017-01-31 Unilever Plc A process for cleaning hard surfaces
CN102481603B (zh) 2009-08-19 2016-08-17 荷兰联合利华有限公司 清洁基质的装置
JP5066152B2 (ja) * 2009-09-25 2012-11-07 株式会社東芝 洗浄システム
US20110130009A1 (en) * 2009-11-30 2011-06-02 Lam Research Ag Method and apparatus for surface treatment using a mixture of acid and oxidizing gas
SG181642A1 (en) * 2009-12-11 2012-07-30 Advanced Tech Materials Removal of masking material
CN102834182B (zh) * 2010-04-27 2016-11-02 泰尔Fsi公司 在邻近基板表面处的受控流体混合情况下的微电子基板的湿处理
JP2012074601A (ja) * 2010-09-29 2012-04-12 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
CN102466988B (zh) * 2010-11-03 2014-05-07 中国科学院微电子研究所 高温水蒸气和水混合射流清洗系统及方法
JP2012129496A (ja) * 2010-11-22 2012-07-05 Tokyo Electron Ltd 液処理方法、その液処理方法を実行させるためのプログラムを記録した記録媒体及び液処理装置
US8709165B2 (en) 2010-12-03 2014-04-29 Lam Research Ag Method and apparatus for surface treatment using inorganic acid and ozone
US9299570B2 (en) * 2010-12-10 2016-03-29 Tel Fsi, Inc. Process for silicon nitride removal selective to SiGex
US9691628B2 (en) * 2010-12-10 2017-06-27 Tel Fsi, Inc. Process for silicon nitride removal selective to SiGex
CN110189995A (zh) * 2010-12-10 2019-08-30 东京毅力科创Fsi公司 用于从衬底选择性地移除氮化物的方法
US20120145201A1 (en) * 2010-12-13 2012-06-14 Chang-Hsin Wu Spin rinse dry apparatus and method of processing a wafer using the same
WO2012082198A1 (en) * 2010-12-13 2012-06-21 Tp Solar, Inc. Dopant applicator system and method of applying vaporized doping compositions to pv solar wafers
US20120248061A1 (en) * 2011-03-30 2012-10-04 Tokyo Electron Limited Increasing masking layer etch rate and selectivity
US9257292B2 (en) 2011-03-30 2016-02-09 Tokyo Electron Limited Etch system and method for single substrate processing
TWI419222B (zh) * 2011-05-05 2013-12-11 Lextar Electronics Corp 下蠟製程
CN102319699A (zh) * 2011-06-29 2012-01-18 彩虹（佛山）平板显示有限公司 一种tft基板的清洗装置
US9355874B2 (en) * 2011-09-24 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Silicon nitride etching in a single wafer apparatus
JP5837787B2 (ja) * 2011-09-28 2015-12-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
US8367556B1 (en) * 2011-12-01 2013-02-05 International Business Machines Corporation Use of an organic planarizing mask for cutting a plurality of gate lines
CN103163745B (zh) * 2011-12-15 2015-09-02 中芯国际集成电路制造(上海)有限公司 光刻胶层的去除方法、晶体管的形成方法
JP6024272B2 (ja) * 2011-12-22 2016-11-16 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
US8940103B2 (en) 2012-03-06 2015-01-27 Tokyo Electron Limited Sequential stage mixing for single substrate strip processing
US9075318B2 (en) 2012-03-07 2015-07-07 Tokyo Electron Limited Sequential stage mixing for a resist batch strip process
CN103324032B (zh) * 2012-03-22 2015-07-22 上海微电子装备有限公司 一种多面体主基板及其制造方法和加工方法
EP2850495A4 (en) * 2012-05-18 2016-01-20 Entegris Inc COMPOSITION AND METHOD FOR REMOVING PHOTOLACK FROM A SURFACE WITH TITANNITRIDE
US20130319465A1 (en) * 2012-06-03 2013-12-05 Tokyo Electron Limited Method and system for rapid mixing of process chemicals using an injection nozzle
JP5832397B2 (ja) * 2012-06-22 2015-12-16 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP6168271B2 (ja) 2012-08-08 2017-07-26 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
TWI576938B (zh) 2012-08-17 2017-04-01 斯克林集團公司 基板處理裝置及基板處理方法
US9513556B2 (en) * 2012-11-19 2016-12-06 Tokyo Electron Limited Method and system of process chemical temperature control using an injection nozzle
US9017568B2 (en) 2013-01-22 2015-04-28 Tel Fsi, Inc. Process for increasing the hydrophilicity of silicon surfaces following HF treatment
US8871108B2 (en) 2013-01-22 2014-10-28 Tel Fsi, Inc. Process for removing carbon material from substrates
US9117760B2 (en) * 2013-01-30 2015-08-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for energized and pressurized liquids for cleaning/etching applications in semiconductor manufacturing
CN105121040B (zh) * 2013-05-08 2018-04-10 东京毅力科创Fsi公司 用于雾度消除和残留物去除的包括水蒸气的方法
US10464107B2 (en) 2013-10-24 2019-11-05 SCREEN Holdings Co., Ltd. Substrate processing method and substrate processing apparatus
WO2015073517A1 (en) * 2013-11-13 2015-05-21 Tel Fsi, Inc. Improved chamber cleaning when using acid chemistries to fabricate microelectronic devices and precursors thereof
US20160284535A1 (en) * 2015-03-27 2016-09-29 Tel Fsi, Inc. Method for wet stripping silicon-containing organic layers
TWI629720B (zh) * 2015-09-30 2018-07-11 東京威力科創股份有限公司 用於濕蝕刻製程之溫度的動態控制之方法及設備
US10325779B2 (en) 2016-03-30 2019-06-18 Tokyo Electron Limited Colloidal silica growth inhibitor and associated method and system
US10515820B2 (en) 2016-03-30 2019-12-24 Tokyo Electron Limited Process and apparatus for processing a nitride structure without silica deposition
GB201815163D0 (en) 2018-09-18 2018-10-31 Lam Res Ag Wafer washing method and apparatus
JP7713834B2 (ja) * 2020-10-09 2025-07-28 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP7738433B2 (ja) * 2020-10-09 2025-09-12 東京エレクトロン株式会社 基板処理装置
CN112599458A (zh) * 2021-03-03 2021-04-02 西安奕斯伟硅片技术有限公司 硅片刻蚀装置和方法
JP7675540B2 (ja) * 2021-03-17 2025-05-13 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP7638138B2 (ja) * 2021-04-20 2025-03-03 東京エレクトロン株式会社 基板処理装置および基板処理方法
CN113471108B (zh) * 2021-07-06 2022-10-21 华海清科股份有限公司 一种基于马兰戈尼效应的晶圆竖直旋转处理装置
JP2023087757A (ja) * 2021-12-14 2023-06-26 東京エレクトロン株式会社 ノズル、基板処理装置および基板処理方法
JP2024011170A (ja) * 2022-07-14 2024-01-25 東京エレクトロン株式会社 基板処理装置および基板処理方法
CN114935880A (zh) * 2022-07-25 2022-08-23 合肥晶合集成电路股份有限公司 一种光阻的去除方法和装置
KR20250133381A (ko) * 2023-02-27 2025-09-05 가부시키가이샤 스크린 홀딩스 기판 처리 방법 및 기판 처리 장치

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4778536A (en) * 1985-06-13 1988-10-18 Purusar Corporation Sulfur trioxide vapor phase stripping

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4001383A (en) * 1971-08-12 1977-01-04 Stauffer Chemical Company Impure sulfuric acid treatment process
SU865975A1 (ru) 1980-01-30 1981-09-23 Уральский научно-исследовательский институт трубной промышленности Способ травлени стальных изделий
US5037506A (en) 1990-09-06 1991-08-06 Subhash Gupta Method of stripping layers of organic materials
JP3377294B2 (ja) * 1994-06-03 2003-02-17 大日本スクリーン製造株式会社 基板表面処理方法及び装置
JP3690619B2 (ja) 1996-01-12 2005-08-31 忠弘 大見 洗浄方法及び洗浄装置
US5785875A (en) 1996-02-13 1998-07-28 Micron Technology, Inc. Photoresist removal process using heated solvent vapor
US5998305A (en) 1996-03-29 1999-12-07 Praxair Technology, Inc. Removal of carbon from substrate surfaces
WO1997050019A1 (en) 1996-06-25 1997-12-31 Cfm Technologies, Inc. Improved method for sulfuric acid resist stripping
US5861064A (en) 1997-03-17 1999-01-19 Fsi Int Inc Process for enhanced photoresist removal in conjunction with various methods and chemistries
US7163588B2 (en) 1997-05-09 2007-01-16 Semitool, Inc. Processing a workpiece using water, a base, and ozone
US20020157686A1 (en) 1997-05-09 2002-10-31 Semitool, Inc. Process and apparatus for treating a workpiece such as a semiconductor wafer
US6701941B1 (en) 1997-05-09 2004-03-09 Semitool, Inc. Method for treating the surface of a workpiece
US6869487B1 (en) 1997-05-09 2005-03-22 Semitool, Inc. Process and apparatus for treating a workpiece such as a semiconductor wafer
US5971368A (en) 1997-10-29 1999-10-26 Fsi International, Inc. System to increase the quantity of dissolved gas in a liquid and to maintain the increased quantity of dissolved gas in the liquid until utilized
US6231775B1 (en) 1998-01-28 2001-05-15 Anon, Inc. Process for ashing organic materials from substrates
US6146469A (en) 1998-02-25 2000-11-14 Gamma Precision Technology Apparatus and method for cleaning semiconductor wafers
WO1999049998A1 (en) 1998-03-30 1999-10-07 The Regents Of The University Of California Composition and method for removing photoresist materials from electronic components
US6235641B1 (en) 1998-10-30 2001-05-22 Fsi International Inc. Method and system to control the concentration of dissolved gas in a liquid
US6406551B1 (en) 1999-05-14 2002-06-18 Fsi International, Inc. Method for treating a substrate with heat sensitive agents
US6274506B1 (en) 1999-05-14 2001-08-14 Fsi International, Inc. Apparatus and method for dispensing processing fluid toward a substrate surface
JP2001077069A (ja) * 1999-06-30 2001-03-23 Sony Corp 基板処理方法及び基板処理装置
NL1012895C2 (nl) * 1999-07-22 2001-01-23 Innocleaning Concepts Holding Werkwijze en inrichting voor het verwijderen van vuil met behulp van stoom en reinigingsmiddel.
US6610168B1 (en) 1999-08-12 2003-08-26 Sipec Corporation Resist film removal apparatus and resist film removal method
US6689284B1 (en) 1999-09-29 2004-02-10 Kabushiki Kaisha Toshiba Surface treating method
US7364625B2 (en) 2000-05-30 2008-04-29 Fsi International, Inc. Rinsing processes and equipment
US6488272B1 (en) 2000-06-07 2002-12-03 Simplus Systems Corporation Liquid delivery system emulsifier
US20020063169A1 (en) * 2000-06-26 2002-05-30 Applied Materials, Inc. Wafer spray configurations for a single wafer processing apparatus
US6418945B1 (en) 2000-07-07 2002-07-16 Semitool, Inc. Dual cassette centrifugal processor
US7479205B2 (en) * 2000-09-22 2009-01-20 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus
US6451118B1 (en) 2000-11-14 2002-09-17 Anon, Inc. Cluster tool architecture for sulfur trioxide processing
US6584989B2 (en) 2001-04-17 2003-07-01 International Business Machines Corporation Apparatus and method for wet cleaning
US6867148B2 (en) 2001-05-16 2005-03-15 Micron Technology, Inc. Removal of organic material in integrated circuit fabrication using ozonated organic acid solutions
US6598805B2 (en) * 2001-05-30 2003-07-29 Dainippon Screen Mfg. Co., Ltd Substrate cleaning apparatus
JP4942263B2 (ja) * 2001-08-31 2012-05-30 ラムリサーチ株式会社 洗浄装置
US20030190870A1 (en) 2002-04-03 2003-10-09 Applied Materials, Inc. Cleaning ceramic surfaces
US6848455B1 (en) 2002-04-22 2005-02-01 Novellus Systems, Inc. Method and apparatus for removing photoresist and post-etch residue from semiconductor substrates by in-situ generation of oxidizing species
KR100499781B1 (ko) 2002-11-25 2005-07-07 현대모비스 주식회사 버스의 시트구조
US6770424B2 (en) * 2002-12-16 2004-08-03 Asml Holding N.V. Wafer track apparatus and methods for dispensing fluids with rotatable dispense arms
US6908565B2 (en) 2002-12-24 2005-06-21 Intel Corporation Etch thinning techniques for wafer-to-wafer vertical stacks
JP2004351321A (ja) * 2003-05-29 2004-12-16 Regal Joint Co Ltd 液体噴射装置
US7422031B2 (en) 2004-03-12 2008-09-09 Fsi International, Inc. Rotary unions, fluid delivery systems, and related methods
JP4439956B2 (ja) 2004-03-16 2010-03-24 ソニー株式会社 レジスト剥離方法およびレジスト剥離装置
TW200608453A (en) * 2004-08-20 2006-03-01 Aqua Science Corp Object treating device and method
JP4542448B2 (ja) * 2005-03-07 2010-09-15 株式会社フューチャービジョン レジスト剥離除去装置
JP2007201070A (ja) * 2006-01-25 2007-08-09 Sharp Manufacturing System Corp 基板上の残留有機物の除去方法とその装置
US20070227556A1 (en) * 2006-04-04 2007-10-04 Bergman Eric J Methods for removing photoresist
US7737010B2 (en) 2006-04-14 2010-06-15 Micron Technology, Inc. Method of photoresist strip for plasma doping process of semiconductor manufacturing
CN101484974B (zh) 2006-07-07 2013-11-06 Fsi国际公司 用于处理微电子工件的设备和方法以及遮挡结构
JP2008085231A (ja) * 2006-09-28 2008-04-10 Sharp Manufacturing System Corp 基板上の残留有機物除去方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4778536A (en) * 1985-06-13 1988-10-18 Purusar Corporation Sulfur trioxide vapor phase stripping

Also Published As

Publication number Publication date
US20080283090A1 (en) 2008-11-20
US20100326477A1 (en) 2010-12-30
KR20120092722A (ko) 2012-08-21
CN101681827A (zh) 2010-03-24
KR101282714B1 (ko) 2013-07-05
JP5199339B2 (ja) 2013-05-15
WO2008143909A1 (en) 2008-11-27
TW200903604A (en) 2009-01-16
KR20100017272A (ko) 2010-02-16
TWI529787B (zh) 2016-04-11
CN102623328A (zh) 2012-08-01
JP2013058790A (ja) 2013-03-28
US8920577B2 (en) 2014-12-30
JP2010528459A (ja) 2010-08-19
KR101532224B1 (ko) 2015-06-30
JP5249462B2 (ja) 2013-07-31
US7819984B2 (en) 2010-10-26

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