CN102615446A - 焊料、焊接方法和半导体器件 - Google Patents

焊料、焊接方法和半导体器件 Download PDF

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CN102615446A
CN102615446A CN2011104606515A CN201110460651A CN102615446A CN 102615446 A CN102615446 A CN 102615446A CN 2011104606515 A CN2011104606515 A CN 2011104606515A CN 201110460651 A CN201110460651 A CN 201110460651A CN 102615446 A CN102615446 A CN 102615446A
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scolder
alloy
content
solder
fusing point
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CN102615446B (zh
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赤松俊也
今泉延弘
作山诚树
上西启介
中西彻洋
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Fujitsu Ltd
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Fujitsu Ltd
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457—Solder materials or compositions; Methods of application thereof
    • H05K3/3463—Solder compositions in relation to features of the printed circuit board or the mounting process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
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    • B23K35/262—Sn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
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    • H05K3/00—Apparatus or processes for manufacturing printed circuits
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Abstract

本发明提供一种焊料、焊接方法和半导体器件，所述焊料包括Sn(锡)、Bi(铋)和Zn(锌)，其中所述焊料具有0.01wt％至0.1wt％的Zn含量。

Description

焊料、焊接方法和半导体器件
技术领域
本文讨论的实施方案涉及焊料、焊接方法和半导体器件。
背景技术
迄今，例如，在将电子元件安装在电路板上时，广泛使用具有例如37重量％的Pb(铅)含量的Sn(锡)-Pb(铅)共晶焊料。然而，近年来，含Pb焊料的应用已从实现环保的角度受到限制，使得无Pb焊料得以应用。
含3wt％Ag(银)、0.5wt％Cu(铜)和余量Sn的Sn-Ag-Cu合金已知为典型的无Pb焊料。在下文，在表示合金组成的情况下，含量(wt％)在元素符号之前描述。例如，前文Sn-Ag-Cu合金表示为Sn-3wt％Ag-0.5wt％Cu。
此外，Sn-3.5wt％Ag合金和Sn-0.7wt％Cu合金也已知为无铅焊料合金。
以下为参考文件。
日本专利特许公开公布号62-252693
日本专利特许公开公布号2001-334386
日本专利特许公开公布号2010-167472
发明内容
根据实施方案的一个方面，焊料包括Sn(锡)、Bi(铋)和Zn(锌)，其中焊料具有0.01wt％至0.1wt％的Zn含量。
借助于权利要求中具体指出的要素与组合将实现并获得本发明的目的和优点。
应当理解，前文的一般性描述与以下详细描述两者均为示例性和说明性的，并且不是对所要求保护的本发明的限制。
附图说明
图1是Sn-Bi合金的相图；
图2是图示Bi含量与Sn-Bi合金的疲劳寿命之间关系的图；
图3是用于测量疲劳寿命方法概要的说明图；
图4是图示Sb含量与Sn-Bi-Sb合金断裂伸长率之间的关系的图；
图5A是Sn-58wt％Bi-0.5wt％Sb合金结构的二值化扫描电镜显微照片，并且图5B是Sn-58wt％Bi-0.5wt％Sb-0.1wt％Zn合金结构的二值化扫描电镜显微照片；
图6是Sn-58wt％Bi合金的组分列表；
图7是图示回流时一个示例性温度曲线的图；
图8是凸块拉力测试概要的说明图；
图9是图示凸块拉力测试结果的图；
图10是图示在125℃保持1000小时之后Sn-58wt％Bi-0.5wt％Sb-Zn合金的Zn含量与拉伸强度(断裂应力)之间的关系的图；
图11是用于计算润湿铺展度的方法的说明图；
图12是图示Sn-Bi-Sb合金的Zn含量与润湿铺展度之间关系的图；和
13是示例性倒装芯片球栅格阵列(FC-BGA)封装半导体器件的横截面视图。
具体实施方式
在描述实施方案之前，下面将描述初步信息以利于理解实施方案。
对于倒装芯片球栅格阵列(FC-BGA)封装半导体器件，将半导体芯片(裸片)用焊料(焊料凸块)安装在封装衬底(插入式)的上侧，用于初步安装。将用于二次安装以与电路板形成连接的焊料(焊球)布置在封装衬底的下侧上。对于FC-BGA封装半导体器件，用于初步安装的焊料不应在安装在电路板上的过程中熔化。为此，重要的是用于二次安装的焊料的熔点充分低于用于初步安装的焊料的熔点。
上文描述的所有无Pb焊料合金都具有比Sn-Pb焊料(共晶焊料)高的熔点。在目前的情况下，没有适合作为用于二次安装的焊料的低熔点无Pb焊料。例如，Sn-37wt％Pb焊料具有183℃的熔点，而Sn-3wt％Ag-0.5wt％Cu合金具有217℃的熔点，Sn-3.5wt％Ag合金具有221℃的熔点，并且Sn-0.7wt％Cu合金具有227℃的熔点。
Sn-Bi(铋)合金已知是具有低熔点的合金。例如，Sn-58wt％Bi合金具有139℃的熔点。由此预期，例如Sn-3wt％Ag-0.5wt％Cu合金可用作用于初步安装的焊料，并且Sn-58wt％Bi合金可用作用于二次安装的焊料。
然而，Sn-58wt％Bi合金硬且脆。接合后施加于合金上的冲击或大应力会引起开裂。因此，当合金用作用于电子元件的焊料时，其不具有足够的可靠性。
同时，已经报道了由含有0.5wt％至1.5wt％Sb和0.5wt％至3wt％Ag的Sn-Bi合金构成的无Pb焊料以及由含有0.3wt％至0.8wt％Sb的Sn-Bi合金构成的无Pb焊料。
发明人已实施了如下环境测试(加速测试)，测试中将含Ag或Sb的Sn-Bi合金(无Pb焊料)焊接到Cu(铜)电极，并在高温环境中保持，以检查粘合强度的降低情况。结果已证明，在无Pb焊料的情况下，Cu与Sn反应，以生长金属间化合物(Cu-Sn反应层)，并且在电极与焊料之间的界面形成脆性富Bi层，由此降低粘合强度。
此外，已报道了包含0.1wt％至3wt％Sb和2wt％至4wt％Zn(锌)的Sn-Bi合金。然而，该焊料适合于陶瓷材料并且对于电极材料例如Cu没有足够的润湿性。
实施方案
发明人已对可用于FC-BGA封装半导体器件的无Pb焊料进行了深入研究，所述无Pb焊料具有低熔点和高延展性，并且长期保持足够的粘合强度。结果已证明，由包含0.01wt％至0.1wt％Zn的Sn-Bi合金构成的焊料(Sn-Bi-Zn合金)具有低熔点，固化后形成Sn和Bi的共晶结构，并且如果在高温环境进行环境测试的话仅呈现小的强度降低。
如果Sn-Bi-Zn合金具有小于45wt％的Bi含量，则Sn的初晶析出增加，从而提高合金(焊料)的熔点。如果Sn-Bi-Zn合金具有超过65wt％的Bi含量，则熔点以及Bi的初晶析出增加，从而使合金变脆。因此，Sn-Bi-Zn合金优选具有45wt％至65wt％的Bi含量。
图1是Sn-Bi合金的相图。如图1中所示，当Bi含量在45wt％至65wt％的范围时，Sn-Bi合金具有165℃或更低的熔点。根据该实施方案的无Pb焊料(Sn-Bi-Zn合金)是其中掺入Zn的Sn-Bi合金。无Pb焊料的熔点基本上与Sn-Bi合金的熔点相同，这是因为Zn含量低至0.1wt％或更小。
图2是图示Bi含量与Sn-Bi合金的疲劳寿命之间的关系的图，水平轴代表Bi含量，而垂直轴代表疲劳寿命。如图3所示，以6.28弧度/秒的速度对测试试样1重复施加0.5％的扭转应变，测试试样1测量的尺寸为10mm宽×50mm长×0.7mm厚。测量测试试样1被损坏时的循环数目(重复次数)，并将其定义为疲劳寿命。
如从图2清楚可见的，当Bi含量在51wt％至60wt％的范围内时，重复次数为10×103或更多，这证明足够长的疲劳寿命。考虑疲劳寿命以及熔点，Sn-Bi-Zn合金优选具有51wt％至60wt％的Bi含量。
Zn改善对Cu电极的粘合强度。亦即，Zn与作为电极材料的Cu反应，以在电极与焊料之间的界面处形成Cu-Zn化合物。Cu-Zn化合物改善电极与焊料之间的粘合强度。
然而，当Sn-Bi-Zn合金具有小于0.01wt％的Zn含量时，形成的Cu-Zn化合物的量小，由此不能充分改善粘合强度。当Sn-Bi-Zn合金具有超过0.1wt％的Zn含量时，焊料的润湿性降低。焊料的润湿性降低要求高度活性的焊剂。通常，高度活性的焊剂是高腐蚀性的。即使在焊剂清除之后少量的焊剂残留也会降低长期可靠性。因此，根据该实施方案的无Pb焊料(Sn-Bi-Zn合金)的Zn含量设在0.01wt％至0.1wt％的范围内。
如上文所述，将Zn掺入Sn-Bi合金中改善了电极与焊料之间界面处的粘合强度，由此抑制连接破裂。然而，如果焊料自身具有低强度，则焊料部分在施加应力时破裂。因此，优选增加焊料自身的强度。
图4是图示Sb含量与Sn-Bi-Sb合金的断裂伸长率之间关系的图，水平轴代表Sb含量，而垂直轴代表断裂伸长率。如从图4清楚可见的，在Sn-Bi-Sb合金的Sb含量为0.5wt％时，较高的Sb含量导致较高的断裂伸长率。在Sb含量超过0.5wt％时，较高的Sb含量导致较低的断裂伸长率。图4也证明，在Sb含量为0.3wt％至0.8wt％时的断裂伸长率肯定大于Sn-58wt％Bi合金(在图4中为0的Sb含量)的断裂伸长率。
因此，在根据该实施方案的无Pb焊料中，优选以0.3wt％至0.8wt％的范围包含Sb。这改善延展性并抑制焊料部分的破裂以及电极与焊料之间连接的破裂。
图5A是Sn-58wt％Bi-0.5wt％Sb合金结构的二值化扫描电镜显微照片。图5B是Sn-58wt％Bi-0.5wt％Sb-0.1wt％Zn合金结构的二值化扫描电镜显微照片。
在图5A和5B中，深色阴影部分代表Sn，而浅色阴影部分代表Bi。Sb是与Bi形成完全固溶体的几种元素之一。掺入Sn-Bi合金中的Sb与Sn键合，以形成金属间化合物。在Sn-Bi合金的情况下，Bi作为共晶晶体结晶出来，或者从Sn结晶。将Sb掺入Sn-Bi合金中导致共晶结构尺寸的减小，从而改善延展性(伸长率)。
如从图5A和5B清楚可见的，即使将Zn掺入Sn-Bi-Sb合金中，也几乎不发生共晶结构的粗化，或者几乎不发生Zn的结晶，从而得获得精细结构。
下文将描述根据该实施方案的无Pb焊料的性质。
正常温度的凸块拉力测试
制备Sn-58wt％Bi合金作为样品1。图6是Sn-58wt％Bi合金组分的列表。在图6中，除Sn和Bi以外的元素为杂质(附带杂质)。
接下来，将Sb以0.5wt％的比例添加到具有与样品1相同组成的Sn-Bi合金中以形成Sn-Bi-Sb合金，该合金定义为样品2。将Zn以0.01wt％、0.5wt％、1.0wt％和1.5wt％的比例添加到具有与样品2相同组成的Sn-Bi-Sb合金中以形成Sn-Bi-Sb-Zn合金，该合金定义为样品3至6。
制备多个印刷电路板(玻璃环氧树脂板)，每个电路板测量的尺寸为110mm×110mm×1.0mm厚。将每个直径为0.64mm的Cu电极(焊盘)以矩阵形式布置在每个印刷电路板的表面上。将焊接掩模提供在每个印刷电路板的表面上。将每个直径为0.54mm的开口布置在焊接掩模对应于Cu电极的部分。
由样品1至6的合金来制备球形焊球和焊膏。通过印刷将焊膏施用到印刷电路板的Cu电极(焊盘)。然后将焊球安装在焊膏上。注意，对于每种印刷电路板使用不同的焊膏和不同的焊球。在相同印刷电路板上提供的焊膏和焊球由相同的样品(合金)构成。
接下来，在氮气氛中进行回流，以使焊球结合到Cu电极。在回流期间，将温度升高到180℃，降低到等于或低于熔点的温度，在该温度保持预定的时间段，并降低到室温，如图7中描绘的温度曲线所示。
使用将焊球结合到Cu电极所得到的印刷电路板作为测试试样。将测试试样放在电炉中，保持在125℃，经过预定的时间之后从电炉取出，并在正常温度经受凸块拉力测试。正常温度的凸块拉力测试用测试仪(型号：SRRIS-4000P，由DAGE Corp.制造)来进行。
图8是凸块拉力测试的概要的说明图。在图8中，附图标记15指测试仪的钳口，附图标记10指印刷电路板，附图标记11指Cu电极，附图标记12指焊接掩模，并且附图标记13指焊球。如图8中所示，焊球13被钳口15夹住，并以300μm/s的速度剥掉，由此测量断裂时的应力(拉伸强度)。
图9是图示凸块拉力测试结果的图，水平轴代表时间，而垂直轴代表拉伸强度。图10是图示Zn含量与Sn-58wt％Bi-0.5wt％Sb-Zn合金在125℃保持1000小时之后的拉伸强度(断裂应力)之间关系的图，水平轴代表Zn含量，而垂直轴代表拉伸强度。
如从图9清楚可见的，在不含Zn的样品1(Sn-58wt％Bi)和样品2(Sn-58wt％Bi-0.5wt％Sb)的每个样品中，在125℃保持1000小时之后的拉伸强度减小到初始拉伸强度的1/3或更小。与此相比，在含有0.01wt％或更多Zn的样品3至6的每个样品中，在125℃保持1000小时之后的拉伸强度略微减小。
Zn的掺入改善强度的原因据认为如下：对于不含Zn的每种Sn-Bi合金，Sn在Cu电极和焊料(Sn-Bi合金)之间的界面处与Cu结合以引起Sn的缺乏，由此形成脆性富Bi层。与此相比，对于每种Sn-Bi-Zn合金，Zn优先与Cu结合，使得不再发生Sn的缺乏，由此抑制脆性富Bi层的形成。这使得可以长期保持足够的强度。
上文描述的测试结果证实，Sn-Bi-Zn合金优选含有0.01wt％或更多Zn。
可湿性测试
与正常温度的凸块拉力测试一样，制备Sn-58wt％Bi合金作为样品1。接下来，将Sb以0.5wt％的比例添加到具有与样品1相同组成的Sn-Bi合金以形成Sn-Bi-Sb合金，该合金定义为样品2。将Zn以0.01wt％、0.1wt％、0.2wt％、0.5wt％和1.0wt％的比例添加到具有与样品2相同组成的Sn-Bi-Sb合金以形成Sn-Bi-Sb-Zn合金，该合金定义为样品3至7。
将松香焊剂(RMA型)施加到具有99.9％纯度的铜板。然后将由样品1至7的合金构成的0.76-mm直径焊球安装在Cu板上。接下来，在氮气氛中进行回流。在回流期间，将温度升高到180℃，降低到等于或低于熔点的温度，在该温度保持预定的时间段，并降低到室温，如在图7中描绘的温度曲线所示的。
回流之后焊料的高度用包括光学显微镜的测高仪来测量。然后计算润湿铺展度。
图11是用于计算润湿铺展度的方法的说明图。图11中，附图标记21指Cu板，附图标记22指回流之前的焊球，并且附图标记23指回流之后的焊料。如图11所示，润湿铺展度用下式(1)计算：
润湿铺展度(％)＝100(D-H)/D(1)
其中D代表回流之前焊球22的直径，并且H代表回流之后焊料23的高度。
图12是图示Sn-Bi-Sb合金的Zn含量与润湿铺展度之间关系的图，水平轴代表Zn含量，而垂直轴代表润湿铺展度。如从图12清楚可见的，较高的Zn含量导致较低的润湿铺展度。在0.1wt％的Zn含量时，润湿铺展度为约50％。在0.2wt％或更大的Zn含量时，润湿铺展度为约40％或更小。
当润湿铺展度为40％或更小时，在焊接时需要高度活性的焊剂。而且，焊接之后不充分的清洁会引起焊料的腐蚀，由此导致长期可靠性显著降低。因此，在该实施方案中，Sn-Bi-Zn合金的Zn含量设定为0.1wt％或更小。
FC-BGA封装半导体器件
图13是示例性倒装芯片球栅格阵列(FC-BGA)封装半导体器件的横截面视图。如图13所示，在FC-BGA封装半导体器件30中，半导体芯片32利用用于初步安装的焊料33(焊料凸块)安装在封装衬底31上。半导体芯片32用密封树脂35密封。
由金属箔构成的垫(导电图案，未示出)布置在封装衬底31的上表面和下表面上。布置在封装衬底31上表面上的垫和布置在封装衬底下表面上的垫通过布置在封装衬底31中的互联线(布线图案和导通孔，未示出)彼此电连接。
布置在封装衬底31下表面上的垫被结合到焊料34(焊球)以用于二次安装，焊球用于将半导体芯片32安装在电路板40上。布置在半导体芯片32中的电路通过用于二次安装的焊料34而电连接到电路板40上的互联线。
可用作用于初级安装的焊料33的合金的实例包括具有221℃熔点的Sn-3.5wt％Ag合金、具有227℃熔点的Sn-0.7wt％Cu合金和具有217℃熔点的Sn-3wt％Ag-0.5wt％Cu合金。作为用于二次安装的焊料34，可以使用根据该实施方案的Sn-Bi-Zn合金或Sn-Bi-Sb-Zn合金。以此方式，使用无Pb焊料作为用于初步安装的焊料33以及用于二次安装的焊料34防止由Pb造成的环境污染。
在将FC-BGA封装半导体器件30安装(焊接)在电路板40上时，例如根据图7中所示的温度曲线进行加热和冷却。
根据该实施方案的Sn-Bi-Zn合金(焊料)和Sn-Bi-Sb-Zn合金(焊料)中的每一种均具有约135℃至约150℃的熔点。由此，焊料在焊接期间需要被加热到高于熔点的温度。然而，过高的温度对电子元件等有不利影响。因此，焊料可以被加热到例如160℃至180℃。在该情况下，如在图7中的实线所表明的，焊料可以从室温被线性加热到Sn-Bi-Zn合金融化的温度。或者，焊料可以被加热到低于熔化温度的温度，在该温度保持预定的时间段，并被加热到熔化温度。
焊接之后，可通过自然冷却来降低温度。过高的冷却速率不导致满意的共晶结构。在过低的冷却速率时，过程要求长的时间，由此造成生产成本增加。因此，冷却速率优选在例如0.05℃/秒至5℃/秒的范围内。
在图7中所示的温度曲线中，冷却步骤包括将焊料在低于焊料熔点并且高于室温的温度保持预定时间段(例如，0.5分钟或更久)的保持子步骤。该保持子步骤不是必要的。为了进一步抑制共晶结构的粗化，优选进行保持子步骤。保持子步骤可以在例如50℃至100℃进行。
对于安装在电路板40上的所得FC-BGA封装半导体器件30，即使对其施加冲击或应力，在连接也不发生诸如开裂的失效。也就是说，连接具有高可靠性。
在前述实施方案中，根据实施方案的无Pb焊料用作用于在FC-BGA封装半导体器件中的二次安装的焊料。当然，根据实施方案的无Pb焊料可以不用做用于二次安装的焊料，而可以用于将电子元件以通常的方式连接到电路板。而且，如上文所述，含有45wt％至65wt％Bi、0.01wt％至0.1wt％Zn、0.3wt％至0.8wt％Sb和Sn的焊料材料改善了疲劳性质和粘合强度。类似地，由含有45wt％至65wt％Bi、0.01wt％至0.1wt％Zn、0.3wt％至0.8wt％Sb和Sn的焊料构成的连接具有高可靠性。也就是说，在从-55℃到125℃的温度循环测试中，在1000次循环或更多次循环之后未检测到失效。
根据实施方案的无Pb焊料具有低熔点，由此在焊接过程中减少能量消耗并降低半导体器件的生产成本。此外，在待焊接的电子元件上施加的热负荷低，由此防止电子元件因焊接期间的热而劣化。为了上文描述的原因，根据该实施方案的无Pb焊料适合用于安装具有高堆积密度的微型化电子元件。
半导体器件可用在诸如消费设备的电子设备中，如个人电脑和便携式电话、服务器、路由器和网络产品，由此改进电子设备的可靠性。
本文记载的所有实例和条件性语言意图用于教导的目的，以辅助阅读者理解本发明以及由发明人贡献的概念来促进技术进步，并且要解读为不受这些具体记载的实例和条件的限制，也不受说明书中有关示出本发明的优势与劣势的这些实例的组织的限制。尽管本发明的实施方案已得以详细描述，应理解可以对这些实施方案做出各种改动、替换和更改，而不偏离本发明的精神和范围。

Claims (8)

1.一种焊料，包含：
Sn(锡)；
Bi(铋)；和
Zn(锌)，
其中所述焊料具有0.01wt％至0.1wt％的Zn含量。
2.根据权利要求1所述的焊料，其中所述焊料具有45wt％至65wt％的Bi含量。
3.根据权利要求1所述的焊料，还包括：
0.3wt％至0.8wt％的Sb(锑)
4.一种用于将电子元件焊接到衬底的焊接方法，所述方法包括如下步骤：
将焊料附着在所述电子元件和所述衬底上的导电图案之间，所述焊料被加热到等于或高于所述焊料的熔点的温度；
使所述焊料冷却至低于所述熔点并且高于室温的温度，并将所述焊料在所述温度保持预定的时间段；和
使所述焊料冷却到室温，
其中所述焊料包含Sn(锡)、Bi(铋)和Zn(锌)，并且所述焊料具有0.01wt％至0.1wt％的Zn含量。
5.根据权利要求4所述的焊接方法，其中所述焊料还含有0.3wt％至0.8wt％的Sb(锑)。
6.一种电子设备，包括：
焊料，所述焊料构成电子元件和衬底之间的连接，
其中所述焊料包含45wt％至65wt％的Bi(铋)、0.01wt％至0.1wt％的Zn(锌)、0.3wt％至0.8wt％的Sb(锑)和Sn(锡)。
7.一种半导体器件，包括：
半导体芯片；
封装衬底，所述封装衬底包括布置在所述封装衬底的每个表面上的导电图案；
第一焊料，所述第一焊料布置在所述封装衬底的一个表面和所述半导体芯片之间，所述第一焊料将所述半导体芯片连接到所述封装衬底；和
第二焊料，所述第二焊料连接到布置在所述封装衬底的另一表面上的所述导电图案，
其中所述第一焊料的熔点高于所述第二焊料的熔点，所述第二焊料包含Sn(锡)、Bi(铋)和Zn(锌)，并且所述第二焊料具有0.01wt％至0.1wt％的Zn含量。
8.根据权利要求7所述的半导体器件，其中所述第二焊料还包含0.3wt％至0.8wt％的Sb(锑)。
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