TWI454332B - 焊料、焊接方法及半導體裝置 - Google Patents

焊料、焊接方法及半導體裝置 Download PDF

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Publication number
TWI454332B
TWI454332B TW100145581A TW100145581A TWI454332B TW I454332 B TWI454332 B TW I454332B TW 100145581 A TW100145581 A TW 100145581A TW 100145581 A TW100145581 A TW 100145581A TW I454332 B TWI454332 B TW I454332B
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Taiwan
Prior art keywords
solder
tin
weight percent
bismuth
alloy
Prior art date
Application number
TW100145581A
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English (en)
Other versions
TW201231206A (en
Inventor
Toshiya Akamatsu
Nobuhiro Imaizumi
Seiki Sakuyama
Keisuke Uenishi
Tetsuhiro Nakanishi
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Fujitsu Ltd
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Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of TW201231206A publication Critical patent/TW201231206A/zh
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Publication of TWI454332B publication Critical patent/TWI454332B/zh

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457—Solder materials or compositions; Methods of application thereof
    • H05K3/3463—Solder compositions in relation to features of the printed circuit board or the mounting process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/264—Bi as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C12/00—Alloys based on antimony or bismuth
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C13/00—Alloys based on tin
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
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    • C22C13/02—Alloys based on tin with antimony or bismuth as the next major constituent
    • C—CHEMISTRY; METALLURGY
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    • C22C30/04—Alloys containing less than 50% by weight of each constituent containing tin or lead
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    • C22C30/06—Alloys containing less than 50% by weight of each constituent containing zinc
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    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T428/12708—Sn-base component

Description

焊料、焊接方法及半導體裝置 發明領域
此處所討論之發明係關於焊料、焊接方法，以及半導體裝置。
 發明背景
至今，舉例來說，當電子構件被鑲嵌至電路板之上時，係廣泛地使用具有鉛成份(例如：37重量百分比)之錫-鉛(Sn-Pb)共晶焊料。然而，近年來，以達到環境保護的觀點，已限制使用含鉛焊料，以至於已使用不含鉛的(Pb-free)焊料。
一含有之3重量百分比之銀、0.5重量百分比之銅，以及剩餘量為錫之錫-銀-銅合金係已知為一典型的不含鉛焊料。在下文，至於表示一合金的組成，該含量(重量百分比)係敘述於元素符號之前。例如，前述之錫-銀-銅合金係以錫-3重量百分比銀-0.5重量百分比銅來表示。
此外，一錫-3.5重量百分比銀合金和錫-0.7重量百分比銅合金係已知為不含鉛之焊料合金。
以下係參考文件。
[文件1]　日本專利早期公開第62-252693號
[文件2]　日本專利早期公開第2001-334386號
[文件3]　日本專利早期公開第2010-167472號
 發明概要
依據本發明之一方面，一焊料包括錫、鉍及鋅，其中該焊料具有鋅含量為0.01重量百分比至0.1重量百分比。
將藉由申請專利範圍中所特定指出之元件及組合而了解及達到本發明之目的及優點。
被了解的是，前述一般敘述以及之後詳細的敘述係屬示範性和解釋性的，而並非用於限制如請求的發明。
圖式簡單說明
第1圖係錫-鉍合金的相位圖；第2圖係說明鉍含量和錫-鉍合金疲勞時限之間關係的圖示；第3圖係概述量測疲勞時限之方法的說明圖；第4圖係說明銻含量和錫-鉍-銻合金斷裂時之延長之間關係的圖示；第5A圖係錫-58重量百分比鉍-0.5重量百分比銻合金結構之二元制掃描式電子顯微照相；第5B圖係錫-58重量百分比鉍-0.5重量百分比銻-0.1重量百分比鋅合金結構之二元制掃描式電子顯微照相；第6圖係錫-58重量百分比鉍合金之成份清單；第7圖係說明在回流的時候示範性溫度之量變曲線的圖表；第8圖係概述拉球測試之說明圖式；第9圖係說明拉球測試結果之圖表；第10圖係說明保持在125℃下1000小時後錫-58重量百分比鉍-0.5重量百分比銻-鋅合金之鋅含量和抗張強度(斷裂應力)之間關係的圖表；第11圖係用於計算藉由潤濕之擴張角度之方法的說明圖式；第12圖係說明錫-鉍-銻合金之鋅含量和藉由潤濕擴張角度之間關係的圖式；以及第13圖係一示範性覆晶式球狀矩陣(flip chip ball grid array；FC-BGA)封裝半導體裝置的剖面圖。
 實施態樣之描述
在敘述實施態樣之前，將於下敘述初步的資訊以有助於了解實施態樣。
對於一覆晶式球狀矩陣(flip chip ball grid allay；FC-BGA)封裝半導體裝置，一半導體晶片(晶元)係以用於一級鑲嵌之焊料(焊料凸起)鑲嵌於一封裝基材之上側之上(插入物)。一用於二級鑲嵌以建立和電路板之連接的焊料(焊料球)係經配置於該封裝基材之下側。對於FC-BGA封裝半導體裝置，該用於一級鑲嵌之焊料在鑲嵌於電路板上之期間不應融熔。為了此目的，重要的是，用於二級鑲嵌之焊料的熔點必須充份地低於用於一級鑲嵌之焊料的熔點。
上述之所有的不含鉛焊料合金具有比錫-鉛焊料(共晶焊料)來得高的熔點。在目前的環境下，沒有適用為用於二級鑲嵌之焊料之低熔點不含鉛焊料。舉例來說，錫-37重量百分比鉛之焊料具有183℃的熔點，反之錫-3重量百分比銀-0.5重量百分比銅合金具有217℃的熔點，錫-3.5重量百分比銀合金具有221℃的熔點，而錫-0.7重量百分比銅合金具有227℃的熔點。
一錫-鉍合金係已知為具有低熔點的合金。舉例來說，一錫-58重量百分比鉍合金具有139℃的熔點。因此推測的是，例如，錫-3重量百分比銀-0.5重量百分比銅合金可被使用為用於一級鑲嵌之焊料而錫-58重量百分比鉍合金可被使用為用於二級鑲嵌之焊料。
然而，該錫-58重量百分比鉍合金係堅硬且易碎的。連結之後，賦加於該合金之衝擊或是較大的壓力造成破裂。因此，當該合金被使用為用於電子構件的焊料時，其不具有足夠的可信賴度。
同時，則提出由含有0.5重量百分比-1.5重量百分比之錫以及0.5重量百分比-3重量百分比之銀的錫-鉍合金所構成之不含鉛焊料和由含有0.3重量百分比-0.8重量百分比銻的錫-鉍合金所構成之不含鉛焊料。
發明人已進行環境測試(加速測試)，其中該含有銀或銻之錫-鉍合金(不含鉛焊料)係經焊接至一銅電極且被保持在高溫環境中以確認結合強度的降低。結果顯示在不含鉛焊料之實例中，銅和錫反應而生成一介金屬化合物(intermetallic compound)(銅-錫反應層)且在電極和焊料之間的界面形成一易碎的富鉍層(Bi-rich layer)，因此降低了結合強度。
此外，提出一含有0.1重量百分比-3重量百分比之銻以及2重量百分比-4重量百分比之鋅的錫-鉍合金。然而，此焊料係適用於陶瓷材料而不具有足夠用於電極材料的可濕性，例如：銅。
實施態樣
發明人對於可使用於FC-BGA封裝半導體裝置之不含鉛焊料已進行密集的研究，該不含鉛焊料具有低熔點以及高延展性且經過一長時間仍保有足夠結合強度。該結果已證實由含有0.01重量百分比至0.1重量百分比之鋅之錫-鉍合金所組成之焊料(錫-鉍-鋅合金)具有低熔點，在固化之後形成錫及鉍之共晶結構，且在強度方面僅呈現少量減少，即使在高溫環境下執行環境測試。
若該錫-鉍-鋅合金具有少於45重量百分比之鉍含量，錫之初晶沉澱遂增加而增加了該合金(焊料)的熔點。苫該錫-鉍-鋅合金具有超過65重量百分比之鉍含量，熔點和鉍之初晶沉澱遂增加而使該合金變成易碎的。因此，該錫-鉍-鋅合金較佳地具有45重量百分比至65重量百分比之鉍含量。
第1圖係錫-鉍合金的相位圖。如第1圖中所說明的，當該鉍含量在45重量百分比至65重量百分比的範圍內，該錫-鉍合金具有165℃或較少的熔點。依據本實施態樣之不含鉛焊料(錫-鉍-鋅合金)係一合併有鋅在內的錫-鉍合金。該不含鉛焊料之熔點實質上相同於該錫-鉍合金之熔點，因為鋅含量係低如0.1%重量百分比或更少。
第2圖係說明鉍含量和錫-鉍合金疲勞時限之間關係的圖示，該水平軸表示鉍含量，而該垂直軸係表示疲勞時限。如第2圖所說明，0.5%之扭轉應變係重覆地以6.28 rad/秒之速度施加至受測樣本1，該受測樣本1量有10 mm寬、50 mm長、0.7 mm厚。當該受測樣本損毀時計算循環次數(重覆的數目)且定義為疲勞時限。
如第2圖中所易懂的，當該鉍含量在51重量百分比至60重量百分比的範圍內，該重覆數目係10×103 次或更多，其證明有足夠長的疲勞時限。考量到疲勞時限以及熔點，該錫-鉍-鋅合金較佳地具有51重量百分比至60重量百分比的鉍含量。
鋅改良了對於銅電極的結合強度。也就是，鋅和銅反應(其為一電極材料)而在電極和焊料之間的界面形成一銅-鋅化合物。該銅-鋅化合物改善了電極和焊料之間的結合強度。
然而，當該錫-鉍-鋅合金具有少於0.01%重量百分比的鋅含量，所形成之銅-鋅化合物的量就少，因此不足於改善該結合強度。當錫-鉍-鋅合金具有多於0.1%重量百分比的鋅含量，該焊料的可濕度減少。焊料可濕度的減少需要高度活性的助熔劑。典型地，高度活性的助熔劑係高腐蝕性的。在助熔劑清潔之後，即使是少量的助熔劑殘餘降低長期的可信賴度。因此，依據本實施態樣之不含鉛焊料(錫-鉍-鋅合金)的鋅含量係設定在0.01%重量百分比至0.1%重量百分比之範圍內。
如上所述，併入鋅於錫-鉍合金改善了電極和焊料之間界面的結合強度，因此抑制了結合點的破裂。然而，若該焊料本身具有低強度，在施以壓力的時候焊料部份則破裂。因此，焊料強度的本身係較佳地經增加的。
第4圖係說明銻含量和錫-鉍-銻合金斷裂時之延長之間關係的圖示，水平軸代表銻含量，而垂直軸代表斷裂時的延長。如第4圖中所易懂的，在錫-鉍-銻合金之銻含量為0.5重量百分比時，較高的銻含量造成較高的斷裂時的延長。在銻含量超過0.5重量百分比時，較高的銻含量造成較低的斷裂時的延長。第4圖也證明在銻含量為0.3重量百分比至0.8重量百分比之間之斷裂時的延長係一定大於錫-58重量百分比鉍合金(在第4圖中當銻含量為0時)之斷裂時的延長。
因此，在依據本實施態樣之不含鉛焊料中，較佳地係含有0.3重量百分比至0.8重量百分比範圍內的銻。此改善了延展性且抑制了焊料部份的斷裂以及電極和焊料之間結合處的斷裂。
第5A圖係錫-58重量百分比鉍-0.5重量百分比銻合金結構之二元制掃描式電子顯微照相。第5B圖係錫-58重量百分比鉍-0.5重量百分比銻-0.1重量百分比鋅合金結構之二元制掃描式電子顯微照相。
在第5A和5B圖中，暗黑部份表示錫，而亮白部份代表鉍。錫是數種和鉍形成完全固態溶液的元素之一。合併入錫-鉍合金之銻係經結合至錫以形成一介金屬化合物。在錫-鉍合金之實例中，鉍結晶出來為共熔晶或是由錫結晶出來。將銻併入錫-鉍合金造成共晶結構尺寸的減少以改良延展性(延長)。
如第5A和5B圖中所易懂的，即使將鋅併入錫-鉍-銻合金中，產生共晶結構之稍粗糙感或是鋅的稍稍結晶，因此得到精細的結構。
將於下文敘述依據此實施態樣之不含鉛焊料的特性。於標準溫度下的拉球測試
如範例1般製備一錫-58重量百分比鉍合金。第6圖係一錫-58重量百分比鉍合金成份的列表。在第6圖中，除了錫和鉍之外的元素是雜質(附帶的雜質)。
接著，銻以0.5%重量百分比的比例被加入錫-鉍合金(具有和範例1一樣的組成)而形成一錫-鉍-銻合金，其係被界定為範例2。鋅以0.01%重量百分比、0.5%重量百分比、1.0%重量百分比以及1.5%重量百分比的比例被加入錫-鉍-銻合金(具有和範例2一樣的組成)而形成一錫-鉍-銻-鋅合金，其係被界定為範例3至6。
準備數個經印刷的電路板(玻璃環氧化物板)，其各量有110mm和110mm以及1.0mm厚。各具有0.64mm直徑的銅電極(端子)係經安置於各經印刷之電路板表面上的矩陣中。提供一焊料遮罩於各經印刷的電路板的表面。各具有0.54mm直徑的開孔係經安置於相對於銅電極的焊料遮罩部份。
球形之焊料球和焊料糊係由範例1至6的合金所製備。該焊料糊係藉由印刷法而施用至該經印刷之電路板的銅電極(端子)。接著該焊料球係被鑲嵌至該焊料糊之上。注意的是，不同的焊料糊和不同的焊料球係被使用於各經印刷之電路板。被配置於相同之經印刷之電路板上的焊料糊和焊料球係由相同的範例(合金)所組成。
接著，在一含氮氛圍下執行回流以將該焊料球黏接至該銅電極。在回流期間，溫度被升至180℃，降低至等於或低於熔點的溫度，維持在該溫度於預先決定的時間區間，且降低至室溫，如第7圖所描述之溫度曲線中所說明的。
所致之其中之焊料球係經黏結至銅電極之經印刷的電路板係使用為測試樣本。該測試樣本係被置放於一電爐中，維持於125℃，在一預定時間的溫度驟減之後由該電爐中移出，且接受在一般溫度下的拉球測試。以一測試器(型號：SRRIS-4000P，由DAGE公司所製造)執行在一般溫度下的拉球測試。
第8圖係概述拉球測試之說明圖式。在第8圖中，參考標號15表示該測試器的夾片，參考標號10表示一經印刷之電路板，參考標號11表示一銅電極，參考標號12表示一焊料遮罩，且參考標號13表示一焊料球。如第8圖中所說明的，該焊料球13係被夾片15所鉗緊且在速度300μm/s之下撕離，藉此測量斷裂時的應力(抗張強度)。
第9圖係說明拉球測試結果之圖表，水平軸表示時間，而垂直軸表示抗張強度。第10圖係說明保持在125℃下1000小時後錫-58重量百分比鉍-0.5重量百分比銻-鋅合金之鋅含量和抗張強度(斷裂應力)之間關係的圖表，水平軸表示含量，而垂直軸表示抗張強度。
如第9圖所能清楚了解的，在範例1(錫-58重量百分比鉍)和範例2(錫-58重量百分比鉍-0.5重量百分比銻)之各者，其並不含有鋅，保持在125℃下1000小時後之抗張強度係降低為原始抗張強度之1/3或更低。相對地，在範例3至範例6中之各者，其含有0.01重量百分比或更多的鋅，保持在125℃下1000小時後之抗張強度係輕微地降低。
併入鋅可改善強度之理由被認為是如下：對於不含有鋅之錫-鉍合金之各者，在銅電極和焊料(錫-鉍合金)之間界面錫係黏結至銅而造成錫缺乏，藉此形成一易碎的富鉍層。相對地，對於錫-鉍-鋅合金之各者，鋅係優先地黏結至銅，以至於不會發生錫缺乏，因此抑制易碎的富鉍層的形成。經過特別長的時間期間此遮罩係可能維持足夠的強度。
以上所述之測試結果證明了錫-鉍-鋅合金較佳地含有0.01%重量百分比或更多的鋅。
可濕性測試(Wettability Test)
如同在一般溫度下之拉球測試，如範例1般製備錫-58重量百分比鉍合金。接著，以0.5%重量百分比的比例將銻加入一錫-鉍合金(具有和範例1一樣的組成)而形成一錫-鉍-銻合金，其係被界定為範例2。鋅以0.01%重量百分比、0.1%重量百分比、0.2%重量百分比、0.5%重量百分比以及1.0%重量百分比的比例被加入錫-鉍-銻合金(具有和範例2一樣的組成)而形成一錫-鉍-銻-鋅合金，其係被界定為範例3至7。
施用一松香助熔劑(RMA類型)至一具有99.9%純度之銅板材。接著由範例1至7之合金所組成的0.76-mm-直徑之焊料球係經鑲嵌至該銅板材之上。接著，在一含氮氛圍下執行回流。在回流期間，溫度被升至180℃，降低至等於或低於熔點的溫度，維持在該溫度於預先決定的時間區間，且降低至室溫，如第7圖所描述之溫度曲線中所說明的。
在回流之後以一包括光學顯微鏡之高度量測儀器測量焊料的高度。抗著計算藉由濕潤之擴張角度。
第11圖係用於計算藉由潤濕之擴張角度之方法的說明圖式。在第11圖中，參考標號21表示一銅板材，參考標號22表示在回流前之焊料球，而參考標號23表示在回流後之焊料球。如第11圖所說明，使用以下方程式(1)計算藉由潤濕之擴張角度：
藉由潤濕之擴張角度(%)=100(D-H)/D(1)
其中D代表在回流前之焊料球22的直徑，而H代表在回流後之焊料球23的高度。
第12圖係說明錫-鉍-銻合金之鋅含量和藉由潤濕之擴張角度之間關係的圖式，水平軸表示鋅含量，而垂直軸表示藉由潤濕之擴張角度。如由第12圖所能清楚了解的，較高的鋅含量造成較低的藉由潤濕之擴張角度。在鋅含量為0.1重量百分比，該藉由潤濕之擴張角度係約50%。在鋅含量為0.2重量百分比或更多，該藉由潤濕之擴張角度係約40%或更少。
當該藉由潤濕之擴張角度係40%或更少時，在焊接的時刻需要高活性助熔劑。此外，在焊接之後不充分的清潔造成焊料的腐蝕，因此導致了長期可靠性明顯減少。因此，在此實施態樣中，錫-鉍-鋅合金之鋅含量係設定為0.1重量百分比或更少。
FC-BGA封裝半導體裝置
第13圖係一示範性覆晶式球狀矩陣(flip chip ball grid array；FC-BGA)封裝半導體裝置的剖面圖。如第13圖中所說明的，在一FC-BGA封裝半導體裝置30中，一半導體晶片32係以焊料33被鑲嵌於一封裝基材31上作為一級鑲嵌(焊料球)。該半導體晶片32係以一密封樹脂35而密封起來。
由金屬薄片所組成之墊材(傳導性圖案，未說明)係經配置於該封裝基材31之上表面及下表面。經配置於上表面之墊材及經配置於該封裝基材31之下表面的墊材係經由配置在封裝基材31中之互相連接的線路(佈線圖案和穿孔，未說明)。
經配置於該封裝基材31之下表面的墊材係黏結至一焊料34(焊料球)作為二級鑲嵌，該焊料球係用於將半導體晶片32鑲嵌於一電路板40上。一經配置於半導體晶片32中之電子電路係經由用於二級鑲嵌之焊料34電性連接至在該電路板40上之互相連接的線路。
可使用為用於一級鑲嵌之焊料33的合金範例包括具有熔點為221℃之錫-3.5重量百分比銀合金，具有熔點為227℃之錫-0.7重量百分比銅合金，以及具有熔點為217℃之錫-3重量百分比銀-0.5重量百分比銅合金。如同用於二級鑲嵌之焊料34，可使用依據此實施態樣之錫-鉍-鋅合金或是錫-鉍-銻-鋅合金。在此方面，使用不含鉛焊料作為用於一級鑲嵌之焊料33以及用於二級鑲嵌之焊料34避免了由鉛所引起的環境污染。
當FC-BGA封裝半導體裝置30係經鑲嵌(經焊接)至電路板40上時，舉例來說，依據第7圖中所說明的溫度曲線執行加熱和冷卻。
依據此實施態樣之錫-鉍-鋅合金(焊料)以及錫-鉍-銻-鋅合金(焊料)之各者具有約135℃至約150℃的熔點。因此，在焊接期間該焊料需要被加熱至高於熔點的溫度。然而，一過度高的溫度逆向地影響電子構件等等。因而，該焊料可被加熱至如160℃至180℃。在此實例中，如第7圖中實線所指示，該焊料係由室溫被線性加熱至錫-鉍-鋅合金熔化的溫度。可擇地，該焊料可被加熱至低於熔點的溫度，維持於該溫度一預定的時間，且加熱至熔化的溫度。
在焊接之後，該溫度可藉由自然冷卻而降低。一過度高的冷卻率並不會造成符合要求的共晶結構。以一過度低的冷卻率，過程需要長的時間，因此造成生產成本的增加。因而，冷卻率較佳係在舉例如0.05℃/秒至5℃/秒之範圍內。
在第7圖所說明的溫度曲線中，一冷卻步驟包括將該焊料保持在低於該焊料熔點且係高於室溫之溫度下一預定時間的保持子步驟(舉例來說，0.5分鐘或更多)。該保持子步驟並非係必須的。為了進一步抑制共晶結構的粗糙化，較佳地係執行該保持子步驟。舉例來說，該保持子步驟係被執行於50℃至100℃。
對於所致之鑲嵌於該電路板40上之FC-BGA封裝半導體裝置30，即使對其施加一撞擊或是壓力，並不會在結合處發生如同破碎般的故障。也就是說，在結合處具有高度的可靠度。
在前述的實施態樣中，依據該實施態樣之不含鉛焊料係被使用為在FC-BGA封裝半導體裝置中的用於二級鑲嵌之焊料。當然，依據該實施態樣之不含鉛焊料可能不被使用為用於二級鑲嵌之焊料，而是以一通常的用法被使用於將電子構件連接於電路板。此外，如上所述，該含有45重量百分比至65重量百分比之鉍，0.01重量百分比至0.1重量百分比的鋅，0.3重量百分比至0.8重量百分比的銻，以及錫的焊料材料改良了易碎之性質和黏合強度。相似地，由含有45重量百分比至65重量百分比之鉍，0.01重量百分比至0.1重量百分比的鋅，0.3重量百分比至0.8重量百分比的銻，以及錫的焊料所構成的結合處係具有高可靠度的。也就是說，在經過1000次或更多的自-55℃至125℃的溫度循環測試之後沒有發現到破裂。
依據此實施態樣之不含鉛焊料具有低熔點，因此減少在焊接過程中之能源消耗且減少半導體裝置的生產成本。此外，加諸於擬被焊接之電子構件的熱負荷為低，因此避免該電子構件在焊接期間被熱的劣化。基於以上所述的理由，依據本實施態樣的不含鉛焊料係適合使用於鑲嵌具有高裝載密度之微型化電子構件。
該半導體裝置可被使用於電子設備，例如消費者設備，例如：個人電腦以及大哥大、伺服器、路由器以及網路產品，藉此改善電子設備的可靠性。
此處所詳述之所有範例和附有條件的表達方式係意欲用於教學之目的以有助於讀者了解本發明以及本發明人對於促進此技術領域所貢獻之概念，且係被解讀為並非限制於此類特定描述的範例及方式，也並非是在本說明書中此類範例之組織係關於表示本發明的優勢及劣勢。雖然本發明之實施態樣已被詳細地敘述，該被了解的是，可對此進行各種不同的改變、替換和變更而不偏離本發明的概念和範圍。
30．．．FC-BGA封裝半導體裝置
31．．．封裝基材
32．．．半導體晶片
33．．．焊料
34．．．焊料
35．．．密封樹脂
40．．．電路板
D．．．回流前之焊料球的直徑
H．．．回流後之焊料球的高度
1．．．受測樣本
10．．．經印刷之電路板
11．．．銅電極
12．．．焊料遮罩
13．．．焊料球
15．．．夾片
21．．．銅板材
22．．．回流前之焊料球
23．．．回流後之焊料球
第1圖係錫-鉍合金的相位圖；
第2圖係說明鉍含量和錫-鉍合金疲勞時限之間關係的圖示；
第3圖係概述量測疲勞時限之方法的說明圖；
第4圖係說明銻含量和錫-鉍-銻合金斷裂時之延長之間關係的圖示；
第5A圖係錫-58重量百分比鉍-0.5重量百分比銻合金結構之二元制掃描式電子顯微照相；
第5B圖係錫-58重量百分比鉍-0.5重量百分比銻-0.1重量百分比鋅合金結構之二元制掃描式電子顯微照相；
第6圖係錫-58重量百分比鉍合金之成份清單；
第7圖係說明在回流的時候示範性溫度之量變曲線的圖表；
第8圖係概述拉球測試之說明圖式；
第9圖係說明拉球測試結果之圖表；
第10圖係說明保持在125℃下1000小時後錫-58重量百分比鉍-0.5重量百分比銻-鋅合金之鋅含量和抗張強度(斷裂應力)之間關係的圖表；
第11圖係用於計算藉由潤濕之擴張角度之方法的說明圖式；
第12圖係說明錫-鉍-銻合金之鋅含量和藉由潤濕擴張角度之間關係的圖式；以及
第13圖係一示範性覆晶式球狀矩陣(flip chip ball grid array；FC-BGA)封裝半導體裝置的剖面圖。

Claims (4)

  1. 一種焊料，該焊料包含：錫；45重量百分比至65重量百分比之鉍；0.01重量百分比至0.1重量百分比之鋅，以及0.3重量百分比至0.8重量百分比的銻。
  2. 一種用於將一電子構件焊接至一基材之焊接方法，該方法包含以下步驟：將一焊料附著於該電子構件和在該基材上之一傳導性圖案之間，將該焊料加熱至等於或高於該焊料之熔點的溫度；將該焊料冷卻至一低於該熔點且高於室溫的溫度，且將該焊料保持於該溫度下一預定的時間；而且將該焊料冷卻至室溫，其中該焊料含有錫、45重量百分比至65重量百分比之鉍、0.01重量百分比至0.1重量百分比之鋅，以及0.3重量百分比至0.8重量百分比的銻。
  3. 一種電子設備，該設備包含：一構成一電子構件和一基材之間之結合處的焊料，其中該焊料包含有45重量百分比至65重量百分比之鉍，0.01重量百分比至0.1重量百分比之鋅，0.3重量百分比至0.8重量百分比之銻，以及錫。
  4. 一種半導體裝置，該裝置包含：一半導體晶片； 一封裝基材，其包括經配置於該封裝基材之各表面上的傳導性圖案；一第一焊料，該焊料係經配置於該封裝基材之一表面和該半導體晶片之間，該第一焊料將該半導體晶片連接至該封裝基材；以及一第二焊料，其係經連接至經配置於該封裝基材之另一表面上的傳導性圖案，其中該第一焊料之熔點係比該第二焊料之熔點來得高，該第二焊料含有錫、45重量百分比至65重量百分比之鉍、0.01重量百分比至0.1重量百分比之鋅，以及0.3重量百分比至0.8重量百分比的銻。
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JP2012157873A (ja) 2012-08-23
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US20120193800A1 (en) 2012-08-02

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