CN102610634B - 半导体装置和半导体装置的制造方法 - Google Patents

半导体装置和半导体装置的制造方法 Download PDF

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Publication number
CN102610634B
CN102610634B CN201210018534.8A CN201210018534A CN102610634B CN 102610634 B CN102610634 B CN 102610634B CN 201210018534 A CN201210018534 A CN 201210018534A CN 102610634 B CN102610634 B CN 102610634B
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China
Prior art keywords
carrier concentration
collector layer
semiconductor device
peak position
semiconductor substrate
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CN201210018534.8A
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Chinese (zh)
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CN102610634A (zh
Inventor
本田成人
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices

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  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
CN201210018534.8A 2011-01-24 2012-01-20 半导体装置和半导体装置的制造方法 Active CN102610634B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011012325A JP5621621B2 (ja) 2011-01-24 2011-01-24 半導体装置と半導体装置の製造方法
JP2011-012325 2011-01-24

Publications (2)

Publication Number Publication Date
CN102610634A CN102610634A (zh) 2012-07-25
CN102610634B true CN102610634B (zh) 2015-07-15

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CN201210018534.8A Active CN102610634B (zh) 2011-01-24 2012-01-20 半导体装置和半导体装置的制造方法

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US (1) US8614448B2 (https=)
JP (1) JP5621621B2 (https=)
KR (1) KR101318219B1 (https=)
CN (1) CN102610634B (https=)
DE (1) DE102011088624B4 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103918078B (zh) 2011-11-09 2016-09-14 丰田自动车株式会社 半导体装置及其制造方法
JP6265594B2 (ja) * 2012-12-21 2018-01-24 ラピスセミコンダクタ株式会社 半導体装置の製造方法、及び半導体装置
JP6219044B2 (ja) * 2013-03-22 2017-10-25 株式会社東芝 半導体装置およびその製造方法
JP6844130B2 (ja) * 2015-08-18 2021-03-17 富士電機株式会社 半導体装置及びその製造方法
JP7119350B2 (ja) * 2017-11-22 2022-08-17 富士電機株式会社 縦型ＧａＮ系半導体装置の製造方法および縦型ＧａＮ系半導体装置
JP7010184B2 (ja) * 2018-09-13 2022-01-26 株式会社デンソー 半導体装置
JP7249586B2 (ja) * 2019-03-18 2023-03-31 国立大学法人東海国立大学機構 窒化物半導体装置の製造方法
DE112022002851T5 (de) * 2022-02-17 2024-03-14 Fuji Electric Co., Ltd. Halbleitervorrichtung und verfahren für dessen herstellung
JP7845142B2 (ja) * 2022-10-27 2026-04-14 株式会社デンソー 半導体装置

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US4782379A (en) * 1981-11-23 1988-11-01 General Electric Company Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device
US5270230A (en) 1990-04-20 1993-12-14 Fuji Electric Co., Ltd. Method for making a conductivity modulation MOSFET
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JPH08288500A (ja) * 1995-04-20 1996-11-01 Hitachi Ltd 炭化珪素半導体素子とその製造法及び用途
JP3727827B2 (ja) * 2000-05-15 2005-12-21 株式会社東芝 半導体装置
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JP2003249653A (ja) * 2002-02-26 2003-09-05 Fuji Electric Co Ltd 半導体装置
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JP4676708B2 (ja) * 2004-03-09 2011-04-27 新電元工業株式会社 半導体装置の製造方法
JP2005354031A (ja) 2004-05-13 2005-12-22 Mitsubishi Electric Corp 半導体装置
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JP2006332199A (ja) * 2005-05-24 2006-12-07 Shindengen Electric Mfg Co Ltd ＳｉＣ半導体装置
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JP4867518B2 (ja) * 2006-08-03 2012-02-01 株式会社デンソー 半導体装置の製造方法
JP4979309B2 (ja) * 2006-08-29 2012-07-18 三菱電機株式会社 電力用半導体装置
JP5320679B2 (ja) 2007-02-28 2013-10-23 富士電機株式会社 半導体装置およびその製造方法
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JP2010056134A (ja) 2008-08-26 2010-03-11 Mitsubishi Electric Corp 半導体装置
JP2010206111A (ja) 2009-03-05 2010-09-16 Toshiba Corp 半導体装置
JP2011012325A (ja) 2009-07-05 2011-01-20 Bisansei Denkaisui Kenkyusho:Kk 電解槽

Also Published As

Publication number Publication date
JP2012156207A (ja) 2012-08-16
US8614448B2 (en) 2013-12-24
JP5621621B2 (ja) 2014-11-12
DE102011088624A1 (de) 2012-07-26
DE102011088624B4 (de) 2016-06-02
KR101318219B1 (ko) 2013-10-15
CN102610634A (zh) 2012-07-25
KR20120085663A (ko) 2012-08-01
US20120187416A1 (en) 2012-07-26

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