CN102585166B - 活性树脂组合物、表面安装方法以及印刷线路板 - Google Patents

活性树脂组合物、表面安装方法以及印刷线路板 Download PDF

Info

Publication number
CN102585166B
CN102585166B CN201110452883.6A CN201110452883A CN102585166B CN 102585166 B CN102585166 B CN 102585166B CN 201110452883 A CN201110452883 A CN 201110452883A CN 102585166 B CN102585166 B CN 102585166B
Authority
CN
China
Prior art keywords
resin
surface mounting
temperature
printed circuit
circuit substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201110452883.6A
Other languages
English (en)
Other versions
CN102585166A (zh
Inventor
北村和宪
高濑靖弘
花田和辉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
YAMAHIDE CHEMISTRY CO Ltd
Original Assignee
YAMAHIDE CHEMISTRY CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by YAMAHIDE CHEMISTRY CO Ltd filed Critical YAMAHIDE CHEMISTRY CO Ltd
Publication of CN102585166A publication Critical patent/CN102585166A/zh
Application granted granted Critical
Publication of CN102585166B publication Critical patent/CN102585166B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/303Surface mounted components, e.g. affixing before soldering, aligning means, spacing means
    • H05K3/305Affixing by adhesive
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00Soldering, e.g. brazing, or unsoldering
    • B23K1/0008Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016Brazing of electronic components
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00Soldering, e.g. brazing, or unsoldering
    • B23K1/20Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/42Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/04Oxygen-containing compounds
    • C08K5/09Carboxylic acids; Metal salts thereof; Anhydrides thereof
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135Double encapsulation or coating and encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
    • H01L24/92Specific sequence of method steps
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K13/00Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
    • H05K13/04Mounting of components, e.g. of leadless components
    • H05K13/046Surface mounting
    • H05K13/0465Surface mounting by soldering
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341Surface mounted components
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00Soldering, e.g. brazing, or unsoldering
    • B23K1/0008Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16238Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area protruding from the surface of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/2919Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119Arrangement of the bump connectors prior to mounting
    • H01L2224/81191Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8138Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/81395Bonding interfaces outside the semiconductor or solid-state body having an external coating, e.g. protective bond-through coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818Bonding techniques
    • H01L2224/81801Soldering or alloying
    • H01L2224/81815Reflow soldering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81909Post-treatment of the bump connector or bonding area
    • H01L2224/8191Cleaning, e.g. oxide removal step, desmearing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83102Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus using surface energy, e.g. capillary forces
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • H01L2224/83192Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83862Heat curing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/921Connecting a surface with connectors of different types
    • H01L2224/9212Sequential connecting processes
    • H01L2224/92122Sequential connecting processes the first connecting process involving a bump connector
    • H01L2224/92125Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • H01L2924/13055Insulated gate bipolar transistor [IGBT]
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10954Other details of electrical connections
    • H05K2201/10977Encapsulated connections
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Wire Bonding (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Epoxy Resins (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

本发明以下述内容为目的。1)在表面安装方法中,不需要焊药的清洗工序,可实现降低制造成本、提高生产率。2)在固化后的涂布树脂以及底部填充树脂等中完全没有产生气泡或空穴等下提高产品的可靠性。3)将固化后的涂布树脂作成对热非常稳定的物质,即使在置于高温时也不会发生腐蚀反应或分解气体。本发明提供表面安装方法,其中在印刷线路基板1的至少部分表面涂布下述活性树脂组合物3,将表面安装部件4搭载于印刷线路基板1上,进行回流焊接并填充底部填充树脂11,之后,加热固化涂布树脂3以及底部填充树脂11,其特征在于,填充底部填充树脂11之前和/或之后,进行真空操作和/或在低于涂布树脂3和底部填充树脂11的任意一个的固化温度的温度下进行加热。

Description

活性树脂组合物、表面安装方法以及印刷线路板
技术领域
本发明涉及对倒装芯片(FlipChip)安装等有用的活性树脂组合物、使用了它的表面安装方法以及利用该表面安装方法制造的印刷线路板。
背景技术
以往,表面安装部件例如BGA部件的表面安装通过向印刷线路基板表面的焊药涂布→向印刷线路基板上的BGA部件搭载→回流焊接→焊药的清洗、除去→底部填充树脂向印刷线路基板和BGA部件的间隙的填充、固化的工序而进行。作为焊药,已知有含有如松香这样的具有羧酸基的化合物作为活性剂的焊药(专利文献1的权利要求2)。
但是,近年来,对于BGA部件而言,为了高功能化而搭载多个芯片,存在尺寸逐渐变大的趋势。
但是,BGA部件的尺寸变大时,在清洗、除去焊药时,BGA部件自身成为清洗的阻碍,有时产生未除去的焊药(焊药残渣)。其结果,在后面的工序的加热固化底部填充树脂时,存在引起焊药残渣中的活性剂成分发生腐蚀反应之类的问题。
另一方面,还已知有活性剂的活性力低而难以成为腐蚀原因的免清洗(没有必要清洗)焊药(专利文献2)。但是,在使用免清洗焊药的情况下,加热固化底部填充树脂时,这次存在免清洗焊药自身产生分解气体而破坏BGA部件的问题。
此外,BGA部件的尺寸变大时,在填充底部填充树脂时,BGA部件的接合部会成为填充的阻碍。特别是在印刷线路基板表面上存在表面凹凸(电路的凹凸、阻焊剂的凹凸等)时,有时不能将底部填充树脂完全填充至凹凸部的各个角落而产生空穴或未填充空隙。其结果,产品的质量、可靠性等显著降低。此外,在忽视这样的空穴等而进行后面工序的底部填充树脂的固化的情况下,产品修复已经变得不可能而只能废弃,成品率降低。
现有技术文献
专利文献
专利文献1:日本特开2004-152936号公报
专利文献2:日本特开2002-237676号公报
发明内容
发明要解决的问题
本申请发明的目的在于,提供能达到如下所述的效果的活性树脂组合物、以及使用了其的表面安装方法。
1)在表面安装方法中,不需要焊药的清洗工序,制造成本的降低以及生产率的提高成为可能。
2)在固化后的涂布树脂以及底部填充树脂等中完全不存在气泡和空穴等,从而可提高产品的可靠性。
3)固化后的涂布树脂对热非常稳定,即使置于高温时也不会产生腐蚀反应及分解气体。
此外,优选地,本发明的目的在于,
4)使底部填充树脂的填充容易。其结果,即使是在安装了大型BGA部件的情况下,也可在底部填充树脂的填充固化部中不产生气泡、空穴、其它未填充空隙,能可靠地接合(粘合),能提高产品的可靠性。
5)提供保存稳定性提高了的活性树脂组合物。
用于解决问题的手段
为了解决上述问题,本申请发明人进行了潜心研究,结果完成了以下的本申请发明。
即,本申请的第一发明提供活性树脂组合物,其特征在于,相对于100重量份环氧树脂,分别含有1~50重量份封端羧酸化合物和/或1~10重量份羧酸化合物、及1~30重量份固化反应开始温度为150℃以上的固化剂。
本申请的第二发明提供表面安装方法,其中,将本申请第一发明的活性树脂组合物涂布在印刷线路基板的至少部分表面,将表面安装部件搭载于印刷线路基板上并进行回流焊接,之后,加热固化涂布树脂,该方法特征在于,在将涂布的活性树脂组合物加热固化之前,进行真空操作和/或低于涂布的活性树脂组合物的固化反应开始温度的加热。
本申请第三发明提供表面安装方法,其中,将本申请第一发明的活性树脂组合物涂布在印刷线路基板的至少部分表面,将表面安装部件搭载于印刷线路基板上,进行回流焊接,填充底部填充树脂,之后,将涂布的活性树脂组合物以及底部填充树脂加热固化,该方法特征在于,在底部填充树脂的填充之前和/或底部填充树脂的填充之后,进行真空操作和/或在低于涂布的活性树脂组合物和底部填充树脂任意一个的固化反应开始温度的温度下进行加热。
本申请第四发明提供本申请第二发明或者第三发明的表面安装方法,其特征在于,将活性树脂组合物涂布在印刷线路基板的至少部分的所述金属表面。
本申请第五发明提供本申请第二发明~第四发明中任一个的表面安装方法,其特征在于,将表面安装部件搭载于印刷线路基板上之前,进行涂布树脂的干燥和/或在涂布树脂的软化点温度以上且低于固化反应开始温度的温度下进行加热。
本申请第六发明提供印刷线路板,其特征在于,所述印刷线路板是利用本申请第二发明~第五发明中任意一个的表面安装方法制造而成。
发明效果
通过使用本申请所述的活性树脂组合物,可以达到如下的效果。
1)在表面安装方法中,不需要焊药的清洗工序,可降低制造成本以及提高生产率。
2)在固化后的涂布树脂以及底部填充树脂等中完全不存在气泡或空穴等下提高产品的可靠性。
3)固化后的涂布树脂对热非常稳定,即使置于高温时也不会产生腐蚀反应及分解气体。
4)使底部填充树脂的填充容易。其结果,即使是在安装了大型BGA部件的情况下,也可在底部填充树脂的填充固化部中不产生气泡、空穴、其它未填充空隙,能可靠地接合(粘合),能提高产品的可靠性。
此外,在本申请所述的活性树脂组合物的优选实施方式中,
5)能提高活性树脂组合物的保存稳定性。
附图说明
图1为用于说明本申请的表面安装方法的一个实施方式的工序剖面图。
图2为用于说明本申请的表面安装方法的另一个实施方式的工序剖面图。
图3为实施例中使用的印刷线路基板的俯视图(A)及其a-a’切断剖面图(B)。
图4为用于说明实施例中所示的表面安装方法的一个实施方式的工序剖面图。
图5为实施例中使用的半导体芯片的仰视图(A)及其a-a’切断剖面图(B)。
图6为实施例中使用的另一个印刷线路基板的俯视图(A)及其a-a’切断剖面图(B)。
图7为实施例中使用的BGA部件的仰视图(A)及其a-a’切断剖面图(B)。
附图标记说明
1、7印刷线路基板
2焊接区(solderpad)
3未固化的活性树脂组合物(涂布树脂)
4表面安装部件(半导体芯片或者BGA部件)
5裸芯片
6固化了的底部填充树脂
8电路
9焊接凸点
10固化了的活性树脂组合物(涂布树脂)
11未固化的底部填充树脂
具体实施方式
以下使用附图详述本申请发明的最佳实施方式。
在用于本申请的表面安装方法的活性树脂组合物中含有环氧树脂。环氧树脂具有作为基体树脂的功能。另外,环氧树脂具有在固化反应时还与后述的活性剂反应而使活性剂失活的功能。由此,固化后的活性树脂组合物对热非常稳定,加热时(例如,加热固化底部填充树脂时)不会产生腐蚀反应及分解气体。
作为这样的环氧树脂,可以举出在室温下为固体状的环氧树脂。作为环氧树脂的软化点温度,例如优选为70~150(特别是80~100)℃。具体而言,作为固体状的环氧树脂,可以举出:甲酚酚醛清漆型环氧树脂、双环戊二烯系环氧树脂、联苯系环氧树脂,双酚A型固态环氧树脂、固态脂环式环氧树脂等。
作为其它的环氧树脂,可以举出在室温下为液状的环氧树脂。液状环氧树脂是指常温下为液态或者半固体状态的环氧树脂,例如,可以举出常温下具有流动性的环氧树脂。作为这样的液态环氧树脂,例如粘度(室温、mPa·s)优选为20000以下、特别是1000~10000。
具体而言,作为液态环氧树脂,可以举出液态双酚A型环氧树脂,例如由下式
[化学式1]
[上述式中,n表示0或1。G表示缩水甘油基。]表示的环氧树脂等,也可以使用它们中的一种以上。此外,作为其它的液态环氧树脂的具体例,可以举出液态双酚F型环氧树脂,例如由下式
[化学式2]
[上述式中,n表示0或1。G表示缩水甘油基。]表示的环氧树脂等,也可以使用它们中的一种以上。
此外,作为其它的液态环氧树脂,具体可以举出:萘型的环氧树脂、二苯硫醚(硫醚)型的环氧树脂、三苯甲基型的环氧树脂、脂环式型的环氧树脂、由醇类制备的环氧树脂、二烯丙基双酚A型的环氧树脂、甲基间苯二酚型的环氧树脂、双酚AD型的环氧树脂、以及N,N,O-三(缩水甘油基)-对氨基苯酚等,也可以使用它们中的一种以上。
优选地,作为液态环氧树脂,可以举出:双酚A型环氧树脂、双酚F型环氧树脂、N,N,O-三(缩水甘油基)-对氨基苯酚、双酚AD型环氧树脂等,也可以使用它们中的一种以上。
在活性树脂组合物中含有封端羧酸化合物和/或羧酸化合物。它们具有作为活性剂的功能。
封端羧酸化合物可通过使羧酸化合物和封端剂进行反应而合成。使用封端羧酸化合物的情况下,能抑制低温副反应,能提高活性树脂组合物的保存稳定性。
作为封端羧酸化合物的一种合成原料的羧酸化合物,可以举出一元(单)羧酸化合物。作为合成原料的羧酸化合物的具体例,可以举出:芳香族一元羧酸[(羟基)苯甲酸、二羟基苯甲酸、苯乙酸、苯甲酸、甲基苯甲酸、萘甲酸等]、饱和一元羧酸[乙酸、丙酸、丁酸、2-甲基丙酸(异丁酸)、2-乙基己酸、月桂酸、环己烷甲酸等]、不饱和一元羧酸(丙烯酸、甲基丙烯酸、巴豆酸、油酸等)、松香酸类等。
作为合成原料的羧酸化合物的其它具体例,可以举出多元(多)羧酸化合物。具体而言,可以举出:脂肪族多元羧酸(乙二酸、丙二酸、丁二酸、戊二酸、己二酸、壬二酸、癸二酸、十二烷二酸、丁烷四酸、1,2,3,4-丁烷四酸等)、芳香族多元羧酸[邻苯二甲酸、间苯二甲酸、对苯二甲酸、偏苯三酸、均苯四甲酸、萘二甲酸、苯羧酸(特别是羧基数为3~4的苯羧酸)等]、脂环族多元羧酸(四氢羧酸、六氢羧酸、四氢邻苯二甲酸、六氢邻苯二甲酸等)、不饱和脂肪族多元羧酸(马来酸、富马酸、衣康酸等)、对具有2个以上(优选2~50个)羟基的多元醇和酸酐进行半酯化而得到的多元羧酸类、使具有2个以上(优选2~50个)异氰酸酯基的多异氰酸酯和羟基羧酸或者氨基酸进行加成反应而得到的多元羧酸类、将不饱和羧酸均聚或者共聚而得到的多元羧酸类、使多元醇和多元羧酸进行反应而得到的聚酯型的多元羧酸、羧酸聚合物(苯乙烯马来酸共聚物、丙烯酸类共聚物等)。
就作为封端羧酸化合物的另一合成原料的封端剂而言,优选在活性树脂组合物的固化反应开始温度下羧基的封端(保护)基脱落这样的封端剂。作为合成原料的封端剂的具体例,可以举出:分子中具有1个乙烯基醚基的化合物[脂肪族乙烯基醚类(甲基乙烯基醚、乙基乙烯基醚、异丙基乙烯基醚、正丙基乙烯基醚、异丁基乙烯基醚、正丁基乙烯基醚、环己基乙烯基醚、丙基乙烯基醚、丁基乙烯基醚、2-乙基环己基乙烯基醚、叔丁基乙烯基醚、2-乙基己基乙烯基醚等)、环状乙烯基醚类(2,3-二氢呋喃、2,3-二氢-2H-吡喃、3,4-二氢-2H-吡喃、3,4-二氢-2-甲氧基-2H-吡喃、3,4-二氢-4,4-二甲基-2H-吡喃-2-酮、3,4-二氢-2-乙氧基-2H-吡喃、3,4-二氢-2H-吡喃-2-甲酸钠、3,4-二氢呋喃等)、脂肪族乙烯基硫醚化合物(二氢呋喃类等)、环状乙烯基醚化合物(二氢-2H-吡喃等)、以及环状乙烯基硫醚化合物等。
作为合成原料的封端剂的其它具体例,可以举出:分子中具有2个以上乙烯基醚基的化合物[二乙烯基醚化合物(乙二醇二乙烯基醚、1,2-丙二醇二乙烯基醚、1,3-丙二醇二乙烯基醚、1,3-丁二醇二乙烯基醚、1,4-丁二醇二乙烯基醚、2,3-丁二醇二乙烯基醚、1,6-己二醇二乙烯基醚、二乙二醇二乙烯基醚、三乙二醇二乙烯基醚、戊二醇二乙烯基醚、二甲基丁二醇二乙烯基醚、3-甲基-1,5-戊二醇二乙烯基醚、氢化双酚A二乙烯基醚、新戊二醇二乙烯基醚、1,8-辛二醇二乙烯基醚、1,4-环己烷二甲醇二乙烯基醚、2-甲基-1,3-丙二醇二乙烯基醚、1,4-环己二醇二乙烯基醚、1,9-壬二醇二乙烯基醚、三乙二醇二乙烯基醚、四乙二醇二乙烯基醚、双酚A二乙烯基醚、氢化双酚A二乙烯基醚等)、二乙烯基硫醚化合物等]。
作为封端羧酸化合物,具体可以举出:环己烷二甲酸的双烷基酯、(甲基)丙烯酸1-异丙氧基乙酯、(甲基)丙烯酸1-乙氧基乙酯、(甲基)丙烯酸1-叔丁氧基乙酯、(甲基)丙烯酸1-(1-甲基己氧基)乙酯、(甲基)丙烯酸1-(1,1-二甲基丙氧基)乙酯、1-异丙氧基乙基(甲基)丙烯酰胺、1-乙氧基乙基(甲基)丙烯酰胺、1-叔丁氧基乙基(甲基)丙烯酰胺、1-(1-甲基己氧基)乙基(甲基)丙烯酰胺、1-(1,1-二甲基丙氧基)乙基(甲基)丙烯酰胺、1,2,4-苯三甲酸-2,4-双(丙氧基乙基)-1-((甲基)丙烯酰氧乙基)酯、以及它们的(共)聚合物等,也可以使用它们中的一种以上。
作为市售品的封端羧酸化合物,具体可以举出:サンタシツドG、サンタシツドFK-03、サンタシツドFK-05、サンタシツドFK-16、サンタシツドKM-01、ノフキユア一TN-2、ノフキユア一OP、以及ノフキユア一TY501(均为日本油脂公司制)等,也可以使用它们中的一种以上。
可以使用羧酸化合物其自身代替封端羧酸化合物或者与之并用。作为羧酸化合物,可以使用作为上述封端羧酸化合物的合成原料而示例的羧酸化合物的一种以上。
在活性树脂组合物中含有固化剂。固化剂的固化反应开始温度为150℃以上(优选160~200℃)。这样,通过使用高温反应性的固化剂,不会因短时间的加热而引起固化反应,因而,即使是回流时也能防止活性树脂组合物固化。具体而言,作为固化剂,可以举出双氰胺等。
在活性树脂组合物中也可以含有溶剂。特别是在使用固体状物(固体状环氧树脂等)的情况下,优选含有溶剂。优选溶剂的沸点低于固化反应开始温度,特别优选150~200℃。具体而言,作为溶剂,可以举出:乙二醇醚类、乙二醇醚酯类、丙二醇醚酯类、N-甲基吡咯烷酮等。
在活性树脂组合物中也可以含有聚二甲基硅氧烷等消泡剂、硅烷偶联剂、气相二氧化硅等作为其它添加剂。
在活性树脂组合物的组成中,相对于100重量份环氧树脂,分别含有如下所述各成分。即,含有1~50(优选10~40)重量份封端羧酸化合物和/或1~10(优选2~5)重量份羧酸化合物、及1~30(优选2~7)重量份固化剂。溶剂优选为10~300(特别是30~100)重量份。
就活性树脂组合物而言,在包含溶剂的情况下或者不包含溶剂的情况下,可以是固体状,也可以是液状。但是,优选活性树脂组合物在除去溶剂(或者树脂干燥)后成为软化点温度50~150(特别是80~120)℃的固体状。软化点温度过低时,有时即使在室温下也显现出粘性,有可能会因尘埃等的附着而混入杂质,相反地软化点温度过高时,有时回流安装后的真空脱泡变得不充分。此外,作为活性树脂组合物,优选冷却后即使固化也可通过加热来再软化的活性树脂组合物。
在本申请的表面安装方法的一个实施方式中,首先,在印刷线路基板(图1A,1)的至少部分表面(包含整个表面。)上,涂布本申请的活性树脂组合物(图1B、3)(以下也将涂布的活性树脂组合物称为“涂布树脂”)。例如,可以涂布在印刷线路基板上的至少部分金属表面上。作为金属,例如可以举出纯金属(铜等)以及合金(焊料等),也可以是它们中的一种以上。更具体而言,也可以涂布在至少部分电路和/或焊接区部(图1A、2)的至少部分上。此外,也可以涂布在作为接合对象的表面安装部件(图1C、4)的至少焊料表面上。具体而言,也可以在表面安装部件的整个表面或者仅焊接区部(图1C、9)涂布。涂布树脂的层厚通常为10~50μm。
其后,根据需要(例如,在使用有固体状环氧树脂以及溶剂的情况下)也可以干燥涂布树脂、除去溶剂。该干燥后的涂布树脂通常成为无粘性的涂膜。作为干燥条件,可以是例如80~120℃、10~30分钟。
此外,根据需要(例如,在干燥后的涂布树脂成为固体状的情况下等)也可以对涂布树脂进行在涂布树脂的软化点温度以上且低于固化反应开始温度的温度下的加热(也称作“加热A”。)。通过该加热A,涂布树脂通常显现出粘性,容易安装表面安装部件。作为加热条件,可以是例如80~180℃、10秒~10分钟。
对于涂布树脂的干燥和加热A,可以只进行任一种操作或者依次或同时进行(不论顺序)这两种操作。
其后,将表面安装部件(图1C、4)搭载于印刷线路基板(图1C、1)上。本申请发明也可以使用大型的表面安装部件、例如50mm方形以上的表面安装部件。作为表面安装部件,具体可以举出:封装部件(BGA部件、CSP部件、MCM部件、IPM部件、IGBT部件等)、半导体芯片等。
其后,进行回流焊接(图1D)。作为回流条件,可以是例如240~300℃、10秒~10分钟。加热时间过长时,有时涂布树脂发生固化反应,因此不优选。
其后,进行真空操作和/或在低于涂布树脂的固化反应开始温度的温度下的加热(也称作“加热B”。)。
真空操作根据以下的理由等来进行。即,回流焊接时,存在于熔融焊料的表面的氧化物等被涂布树脂(活性树脂组合物)还原等,其结果,有时生成水等。在该生成水等原样残留于涂布树脂中的情况下,涂布树脂加热固化时发生蒸发膨胀,可能会在固化后的涂布树脂中产生气泡或空穴等。因此,为了预先除去这样的生成水等,可进行真空操作。此外,通过真空操作,还可进行涂布树脂等的脱泡。就真空操作条件而言,优选例如真空度10~80000(特别是100~50000)Pa、1~60(特别是5~30)分钟。
加热B可在低于涂布树脂的固化反应开始温度的温度下进行,但是,在涂布树脂为固体状的情况下,优选在其软化点温度以上进行。通过加热B,可进行树脂等的脱水、脱泡。此外,在涂布树脂为固体状的情况下,通过加热B,涂布树脂软化,利用该软化了的涂布树脂可将印刷线路基板表面上的凹凸吸收(平坦化)、使其平整。其结果,在后面的工序中进行底部填充树脂的填充时,该填充变得容易,在底部填充树脂的填充固化部不会产生气泡、空穴、其它未填充空隙。具体而言,作为加热条件,优选例如60~150(特别是80~120)℃、0.1~60(特别是1~10)分钟。
对于真空操作和上述加热B,可以仅进行任一种操作或者同时或(不论顺序)依次进行这两种操作。优选至少进行真空操作。
其后,加热固化涂布树脂(图1E、10)。作为加热固化条件,可以为固化剂的固化反应开始温度以上,具体而言为150~200℃、1~4小时。此时,封端羧酸化合物和/或羧酸化合物与环氧树脂发生反应,失去作为活性剂的活性力。因而,使由腐蚀等引起的可靠性降低的原因消失。
如上所述操作可制造本申请所述的印刷线路板。
在本申请的表面安装方法的另一个实施方式中,首先,和上述同样地,进行直至回流焊接的工序。即,在印刷线路基板(图2A、1)的至少部分表面涂布上述活性树脂组合物(图2B、3),将表面安装部件(图2C、4)搭载于印刷线路基板(图2C、1)上,进行回流焊接(图2D)。
然后,为了进行封装等,进行底部填充树脂(图2E、11)的填充。具体而言,向印刷线路基板和表面安装部件的间隙填充底部填充树脂。作为底部填充树脂,优选固化反应开始温度为100~250(特别是150~200)℃的底部填充树脂。具体而言,作为底部填充树脂,可以使用环氧系树脂、有机硅系树脂、聚酰亚胺系树脂、聚烯烃系树脂、氰酸酯系树脂、酚醛系树脂、萘系树脂等的一种以上。
在填充底部填充树脂之前和/或之后,进行真空操作和/或在低于涂布树脂和底部填充树脂中任意一个的固化温度的温度下的加热(也称作“加热C”。)。例如,进行回流焊接之后,进行以下的i)~iii)的任一种操作,其后,加热固化树脂(涂布树脂以及底部填充树脂)。
i)进行真空操作和/或加热C,填充底部填充树脂。
ii)进行真空操作和/或加热C,填充底部填充树脂,进行真空操作和/或加热C。
iii)填充底部填充树脂,进行真空操作和/或加热C。
对于真空操作和加热C,可以仅进行任一种操作或者同时或(不论顺序)依次进行这两种操作,优选至少进行真空操作,另外优选在填充底部填充树脂之前进行加热C。
可以和上述同样地进行真空操作。通过真空操作,可进行脱水等以及树脂(涂布树脂、填充树脂等)的脱泡等。
可以和上述加热B同样地进行加热C。通过加热C,可以容易地进行脱水、脱泡以及底部填充树脂的填充。但是,在填充底部填充树脂之后进行加热C的情况下,为了使涂布树脂以及底部填充树脂不发生固化反应,在低于这两种树脂中任一个的固化反应开始温度的温度下进行加热。
其后,将涂布树脂以及底部填充树脂(图2F、各10、6)加热固化。作为加热固化条件,可以是固化剂的固化反应开始温度以上且底部填充树脂的固化温度以上,具体而言为150~200℃、1~12小时。
如上所述操作可制造本申请所述的底部填充树脂填充的印刷线路板。
实施例
以下用实施例具体地说明本申请发明。
<活性树脂组合物的制备>
·制备实施例1~5
根据表1中所示的配合组成,均匀地混合各配合成分,制备活性树脂组合物(各制备实施例1~5)。
<印刷线路板的制造>
·实施例1~5
在10mm方形的印刷线路基板[焊接区(图4A、2)间距0.6mm,焊接区直径0.3mm、焊接区数25个](图3;图4A、1)整个表面,通过丝网印刷涂布上述活性树脂组合物(各制备实施例1~5)(图4B、3)(图4B)。
其后,将该印刷线路基板100℃下加热20分钟,干燥涂布树脂。冷却至室温后的印刷线路基板的涂布树脂为没有粘性的固体状,表面的铅笔硬度为HB。
其后,当将上述印刷线路基板加热至120℃时,涂布树脂发生软化,显现出粘性。
其后,在涂布树脂软化了的状态下,通过贴装机将4mm方形的半导体芯片[凸点(图4C、9)间距0.6mm、凸点直径0.3mm、凸点数25个](图5;图4C、4)设置在印刷线路基板上(图4C)。
其后,使贴装有半导体芯片(图4C、4)的印刷线路基板(图4C、1)通过回流装置(预热加热条件:150~180℃、60秒,回流加热条件:220~260℃、30秒),进行焊接(图4D)。
当将上述焊接有半导体芯片的印刷线路基板冷却时,涂布树脂成为表面铅笔硬度为HB的固体状。
其后,将上述印刷线路基板再次加热至120℃,结果涂布树脂再次软化,显现出粘性。然后,在该温度下进行真空操作(真空度100Pa、2分钟)。
其后,加热(190℃、2小时)上述印刷线路基板,使活性树脂组合物固化,制作印刷线路板(各实施例1~5)。固化后的涂布树脂表面的铅笔硬度为8H,已完全固化(图4E)。
从上述制作的印刷线路板(各实施例1~5)物理剥离半导体芯片,用20倍的放大镜观察固化了的活性树脂组合物,结果没有确认到气泡以及空穴。
·比较例1
不进行活性树脂组合物加热固化前的120℃的加热以及真空操作,除此以外,和上述印刷线路板(实施例1)的制造方法同样地制作印刷线路板(比校例1)。
从上述制作的印刷线路板(比较例1)物理剥离半导体芯片,用20倍的放大镜观察固化了的活性树脂组合物,结果可确认17个气泡以及空穴,其大小为0.5~2mm。
·实施例6
首先,制备下述组成的均匀糊状活性树脂组合物(制备实施例6)。组成:甲酚酚醛清漆型环氧树脂(软化点温度94℃)100重量份、对羟基苯甲酸4重量份、双氰胺5重量份、丙二醇甲醚乙酸酯50重量份。
在100mm方形的印刷线路基板[焊接区间距0.6mm、焊接区直径0.3mm、焊接区数1010个](图6、1)的整个表面,通过丝网印刷涂布上述糊状活性树脂组合物(制备实施例6)。
其后,将该印刷线路基板在100℃下加热20分钟,干燥涂布树脂。冷却至室温后的印刷线路基板的涂布树脂为没有粘性的固体状,表面的铅笔硬度为HB。
其后,当将上述印刷线路基板加热至120℃时,涂布树脂软化,显现出粘性。
其后,在涂布树脂软化了的状态下,通过贴装机将70mm方形的BGA部件[焊接区间距0.6mm、焊接区直径0.3mm、焊接区数1010个](图7、4)设置在印刷线路基板上。
其后,使贴装有BGA部件的印刷线路基板通过峰值温度设定为260℃的回流装置,进行焊接。
当冷却上述焊接有BGA部件的印刷线路基板时,涂布树脂成为表面的铅笔硬度为HB的固体状。
其后,将上述印刷线路基板再次加热至120℃,结果涂布树脂再次软化,显现出粘性。然后,在该温度下进行真空操作(真空度150Pa、60分钟)。
其后,加热(190℃、2小时)上述印刷线路基板,使活性树脂组合物固化,制作印刷线路板(实施例6)。固化后的涂布树脂表面的铅笔硬度为8H,已完全固化。
从上述制作的印刷线路板(实施例6)物理剥离BGA部件,用20倍的放大镜观察固化了的活性树脂组合物,结果没有确认到气泡以及空穴。
·实施例7
首先,和上述印刷线路板(实施例6)的制造方法同样地进行直至回流焊接的工序。
当冷却上述焊接有BGA部件的印刷线路基板时,涂布树脂成为表面的铅笔硬度为HB的固体状。
其后,将上述涂布树脂再次加热至120℃,结果再次软化,显现出粘性。
其后,在该温度下,进行底部填充树脂(日立化成工业公司制、“CEL-C-3720”)的填充。
其后,在该温度下进行真空操作(真空度150Pa、30分钟)。
其后,加热(190℃、2小时)上述印刷线路基板,使活性树脂组合物以及底部填充树脂固化,制作印刷线路板(实施例7)。
对于上述制作的印刷线路板(实施例7),用X射线进行观察,结果固化了的活性树脂组合物以及底部填充树脂均没有看到气泡以及空穴,另外,也没有确认到底部填充树脂的未填充空隙。
·实施例8~12
代替制备实施例6的活性树脂组合物,使用各制备实施例1~5的活性树脂组合物,除此以外,和上述印刷线路板(实施例7)的制造方法同样地制作印刷线路板(各实施例8~12)。
对于上述制作的印刷线路板(各实施例8~12),用X射线进行观察,结果固化了的活性柑脂组合物与底部填充树脂气泡及空穴均没有确认到,另外,也没有确认到底部填充树脂的未填充空隙。
·比较例2
不进行活性树脂组合物以及底部填充树脂加热固化之前的120℃的加热以及真空操作,除此以外,和上述印刷线路板(实施例8)的制造方法同样地制作印刷线路板(比较例2)。
对于上述制作的印刷线路板(比较例2),用X射线进行观察,结果可确认固化了的活性树脂组合物以及22个底部填充树脂的气泡和空穴,气泡和空穴大小为0.5~2mm,另外,确认有两处底部填充树脂的未填充空隙,其大小为4mm以及7mm。
<活性树脂组合物的各种性能试验>
·焊接连接性试验
使用保存时间为0天的活性树脂组合物作为活性树脂组合物,和上述印刷线路板(各实施例1~5)的制造方法同样地进行直至回流焊接的工序。其后,冷却印刷线路基板,从印刷线路基板强行剥离BGA部件。然后,调查25个焊接凸点内有多少个附着在印刷线路基板的焊接区上。将附着的焊料的比例(焊料附着率)示于表1。
·25℃保存稳定性试验
代替保存时间为0天的活性树脂组合物,使用各种保存时间的不同活性树脂组合物,进行上述焊接连接性试验。然后,调查可以实现(维持)保存时间为0天时的焊料附着率的活性树脂组合物的保存时间。将其保存时间示于表1。
表1
1)日本化药公司制、“EOCN-103”
2)日本化药公司制、“RE-310S”

Claims (8)

1.表面安装方法,其中,将活性树脂组合物涂布在印刷线路基板的至少部分表面,将表面安装部件搭载于印刷线路基板上并进行回流焊接,进行真空操作和/或在低于涂布树脂的固化温度下并且加热温度范围为60~150℃、加热温度时间范围为0.1~60分钟的加热,之后,加热固化涂布树脂,
所述活性树脂组合物特征在于相对于100重量份环氧树脂,含有分别为1~50重量份的封端羧酸化合物及1~30重量份的固化反应开始温度为150℃以上的固化剂。
2.根据权利要求1所述的表面安装方法,其特征在于,将所述活性树脂组合物涂布在印刷线路基板表面的至少部分的金属表面。
3.根据权利要求1所述的表面安装方法,其特征在于,将表面安装部件搭载于印刷线路基板上之前,进行涂布树脂的干燥和/或在涂布树脂的软化点温度以上且低于固化反应开始温度的温度下进行加热。
4.根据权利要求2所述的表面安装方法,其特征在于,将表面安装部件搭载于印刷线路基板上之前,进行涂布树脂的干燥和/或在涂布树脂的软化点温度以上且低于固化反应开始温度的温度下进行加热。
5.表面安装方法,其中,将活性树脂组合物涂布在印刷线路基板的至少部分表面,将表面安装部件搭载于印刷线路基板上,进行回流焊接,填充底部填充树脂,之后,将涂布的活性树脂组合物以及底部填充树脂加热固化,该方法特征在于,在回流焊接后并且底部填充树脂的填充之前、和/或底部填充树脂的填充之后并且在涂布树脂和底部填充树脂的加热固化之前,进行真空操作和/或在低于涂布的活性树脂组合物和底部填充树脂任意一个的固化反应开始温度的温度下并且加热温度范围为60~150℃、加热温度时间范围为0.1~60分钟的加热,
所述活性树脂组合物特征在于相对于100重量份环氧树脂,含有分别为1~50重量份的封端羧酸化合物及1~30重量份的固化反应开始温度为150℃以上的固化剂。
6.根据权利要求5所述的表面安装方法,其特征在于,将所述活性树脂组合物涂布在印刷线路基板表面的至少部分的金属表面。
7.根据权利要求5所述的表面安装方法,其特征在于,其特征在于,将表面安装部件搭载于印刷线路基板上之前,进行涂布树脂的干燥和/或在涂布树脂的软化点温度以上且低于固化反应开始温度的温度下进行加热。
8.根据权利要求6所述的表面安装方法,其特征在于,将表面安装部件搭载于印刷线路基板上之前,进行涂布树脂的干燥和/或在涂布树脂的软化点温度以上且低于固化反应开始温度的温度下进行加热。
CN201110452883.6A 2011-01-04 2011-12-30 活性树脂组合物、表面安装方法以及印刷线路板 Active CN102585166B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2011-011378 2011-01-04
JP2011011378 2011-01-04
JP2011-198839 2011-08-25
JP2011198839 2011-08-25

Publications (2)

Publication Number Publication Date
CN102585166A CN102585166A (zh) 2012-07-18
CN102585166B true CN102585166B (zh) 2016-06-01

Family

ID=46379761

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110452883.6A Active CN102585166B (zh) 2011-01-04 2011-12-30 活性树脂组合物、表面安装方法以及印刷线路板

Country Status (6)

Country Link
US (2) US20120168219A1 (zh)
JP (1) JP5467469B2 (zh)
KR (1) KR101432620B1 (zh)
CN (1) CN102585166B (zh)
DE (1) DE102011122672B4 (zh)
TW (1) TWI490267B (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5234029B2 (ja) * 2009-08-05 2013-07-10 山栄化学株式会社 無洗浄活性樹脂組成物及び表面実装技術
JP5807221B2 (ja) * 2010-06-28 2015-11-10 アユミ工業株式会社 接合構造体製造方法および加熱溶融処理方法ならびにこれらのシステム
US8946072B2 (en) * 2012-02-02 2015-02-03 Taiwan Semiconductor Manufacturing Company, Ltd. No-flow underfill for package with interposer frame
TWI548005B (zh) * 2014-01-24 2016-09-01 環旭電子股份有限公司 選擇性電子封裝模組的製造方法
EP3137565B1 (en) 2014-05-01 2022-09-14 Henkel AG & Co. KGaA Anaerobic curable compositions containing blocked carboxylic acid compounds
WO2015168630A1 (en) 2014-05-01 2015-11-05 Henkel IP & Holding GmbH Anaerobic curable compositions containing blocked (meth)acrylic acid compounds
JP6447557B2 (ja) * 2016-03-24 2019-01-09 日亜化学工業株式会社 発光装置の製造方法
JP6374434B2 (ja) 2016-04-21 2018-08-15 山栄化学株式会社 熱硬化性樹脂組成物及び電子部品搭載基板
GB2577684A (en) 2018-10-01 2020-04-08 Harwin Plc Terminal and method for retaining a component to a surface, and manufacturing method and apparatus
CN113545183B (zh) * 2019-01-04 2023-09-15 捷普有限公司 用于在电路板上提供底部填充物的设备、系统和方法
KR102229860B1 (ko) * 2019-02-07 2021-03-19 (주)에이피텍 카트리지 일체형 디스펜싱 용액 경화 히터
KR20210097292A (ko) 2020-01-30 2021-08-09 엔트리움 주식회사 반도체 장치용 언더필 물질, 이를 이용하여 형성된 언더필 물질층, 및 상기 언더필 물질을 포함하는 반도체 장치
CN113798734B (zh) * 2021-10-15 2023-02-24 浙江亚通新材料股份有限公司 一种锡基焊膏用助焊剂、电子封装用激光软钎焊膏
EP4270504A1 (en) * 2022-04-26 2023-11-01 Terra Quantum AG Contact layer for layered materials

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002239785A (ja) * 2000-12-04 2002-08-28 Fuji Electric Co Ltd 鉛フリーハンダ対応無洗浄用フラックスおよびこれを含有するハンダ組成物
CN1427753A (zh) * 2001-01-08 2003-07-02 亨克尔洛克泰特公司 助熔的底层填料组合物
CN101993581A (zh) * 2009-08-05 2011-03-30 山荣化学有限公司 免清洁的活化的树脂组合物及使用该组合物的表面安装方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5620831A (en) 1994-04-05 1997-04-15 Taiyo Ink Manufacturing Co., Ltd. Cyanoguanidine derivatives, and thermosetting or photocurable, thermosetting resin composition using the same
JP3816714B2 (ja) * 2000-02-29 2006-08-30 Tdk株式会社 熱硬化性フラックスおよびはんだ付け方法、ならびに電子部品搭載基板
JP2002237676A (ja) 2001-02-08 2002-08-23 Denso Corp 表面実装部品の組み付け方法
TW574739B (en) * 2001-02-14 2004-02-01 Nitto Denko Corp Thermosetting resin composition and semiconductor device using the same
JP5280597B2 (ja) * 2001-03-30 2013-09-04 サンスター技研株式会社 一液加熱硬化型エポキシ樹脂組成物および半導体実装用アンダーフィル材
JP3911690B2 (ja) 2001-07-19 2007-05-09 山栄化学株式会社 熱硬化性樹脂組成物、並びに平滑板の製造方法及びその平滑板
JP3606253B2 (ja) 2001-11-27 2005-01-05 松下電工株式会社 エポキシ樹脂組成物及び半導体装置
MY139328A (en) * 2002-05-20 2009-09-30 Nitto Denko Corp Thermosetting resin composition and semiconductor device obtained with the same
JP2004152936A (ja) 2002-10-30 2004-05-27 Tamura Kaken Co Ltd 回路基板はんだ付用フラックス、ソルダーペースト及び回路基板
JP4784238B2 (ja) * 2005-05-23 2011-10-05 日立化成工業株式会社 液状封止材の流動性評価方法及び液状封止材の選択方法
JP4915639B2 (ja) 2005-08-11 2012-04-11 山栄化学株式会社 多層プリント配線板及びその製造方法
JP2008147601A (ja) 2006-12-13 2008-06-26 Yoshihiro Shimada フリップチップ接合方法及び半導体装置の製造方法
JP5387874B2 (ja) 2007-10-17 2014-01-15 日立化成株式会社 液状封止樹脂組成物を用いた半導体装置の製造方法
JP5344394B2 (ja) 2008-07-10 2013-11-20 山栄化学株式会社 硬化性樹脂組成物、並びにハロゲンフリー樹脂基板及びハロゲンフリービルドアッププリント配線板
DE102010046930B4 (de) 2010-02-23 2014-07-17 San-Ei Kagaku Co. Ltd. Verfahren zur Oberflächenmontage

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002239785A (ja) * 2000-12-04 2002-08-28 Fuji Electric Co Ltd 鉛フリーハンダ対応無洗浄用フラックスおよびこれを含有するハンダ組成物
CN1427753A (zh) * 2001-01-08 2003-07-02 亨克尔洛克泰特公司 助熔的底层填料组合物
CN101993581A (zh) * 2009-08-05 2011-03-30 山荣化学有限公司 免清洁的活化的树脂组合物及使用该组合物的表面安装方法

Also Published As

Publication number Publication date
JP2013059807A (ja) 2013-04-04
US20120168219A1 (en) 2012-07-05
US9072205B1 (en) 2015-06-30
TWI490267B (zh) 2015-07-01
KR101432620B1 (ko) 2014-08-21
JP5467469B2 (ja) 2014-04-09
TW201237095A (en) 2012-09-16
CN102585166A (zh) 2012-07-18
KR20120079448A (ko) 2012-07-12
DE102011122672B4 (de) 2021-07-08
DE102011122672A1 (de) 2012-07-05
US20150158103A1 (en) 2015-06-11

Similar Documents

Publication Publication Date Title
CN102585166B (zh) 活性树脂组合物、表面安装方法以及印刷线路板
TWI238476B (en) Dual cure B-stageable underfill for wafer level
KR20070081435A (ko) 웨이퍼 패키지용 언더필 인캡슐런트, 및 그의 도포 방법
JP4904923B2 (ja) 樹脂組成物、プリアプライド用封止材、半導体装置、半導体装置の製造方法およびプリアプライド封止用部品
CN101993581B (zh) 免清洁的活化的树脂组合物及使用该组合物的表面安装方法
JP2000302841A (ja) エポキシ樹脂組成物
CN1314752C (zh) 环氧树脂组合物
JP5493327B2 (ja) 封止充てん用樹脂組成物、並びに半導体装置及びその製造方法
KR101900602B1 (ko) 열경화성 수지 조성물 및 전자 부품 탑재 기판
JP2004204047A (ja) 液状エポキシ樹脂組成物
JP2001329048A (ja) 封止充填剤用液状エポキシ樹脂組成物
JP2008214381A (ja) 一液性エポキシ樹脂組成物
JP2016124021A (ja) 無洗浄フラックス、および半導体パッケージの製造方法
JP5361840B2 (ja) 半導体装置の製造方法、及び該製造方法を用いて製作された半導体装置
CN115298242B (zh) 固化剂、包含其的用于半导体的粘合剂组合物、用于半导体的粘合剂膜和使用其的半导体封装件
WO2022158460A1 (ja) はんだ接合用樹脂組成物
KR102017281B1 (ko) 친환경 솔더 페이스트용 플럭스 조성물
JP2022147854A (ja) 仮固定組成物
MXPA99006673A (en) Mounting structure and mounting process from semiconductor devices
MXPA99006668A (en) Thermosetting resin compositions

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant