TWI490267B - 活性樹脂組成物、表面組裝方法及印刷配線板 - Google Patents
活性樹脂組成物、表面組裝方法及印刷配線板 Download PDFInfo
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- TWI490267B TWI490267B TW100149803A TW100149803A TWI490267B TW I490267 B TWI490267 B TW I490267B TW 100149803 A TW100149803 A TW 100149803A TW 100149803 A TW100149803 A TW 100149803A TW I490267 B TWI490267 B TW I490267B
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- Prior art keywords
- resin
- printed wiring
- wiring board
- temperature
- resin composition
- Prior art date
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/303—Surface mounted components, e.g. affixing before soldering, aligning means, spacing means
- H05K3/305—Affixing by adhesive
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/42—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/09—Carboxylic acids; Metal salts thereof; Anhydrides thereof
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- C—CHEMISTRY; METALLURGY
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- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
- H01L24/92—Specific sequence of method steps
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- H—ELECTRICITY
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
- H05K13/04—Mounting of components, e.g. of leadless components
- H05K13/046—Surface mounting
- H05K13/0465—Surface mounting by soldering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16238—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area protruding from the surface of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L2224/29099—Material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81395—Bonding interfaces outside the semiconductor or solid-state body having an external coating, e.g. protective bond-through coating
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H01L2224/81815—Reflow soldering
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- H—ELECTRICITY
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81909—Post-treatment of the bump connector or bonding area
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83102—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus using surface energy, e.g. capillary forces
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Description
本發明是有關在覆晶技術(Flip-Chip)組裝等之中有用的活性樹脂組成物,使用該樹脂組成物的表面組裝方法,以及藉由該表面組裝方法所製造的印刷配線板。
以往,表面組裝組件例如BGA組件的表面組裝,係藉由:對印刷配線基板表面的塗佈助熔劑(flux)→在印刷配線基板上搭載BGA組件→迴焊(reflow soldering)→助熔劑的洗淨/除去→對印刷配線基板與BGA組件之間隙進行底部填充膠(underfill)樹脂的填充/硬化等步驟來進行。作為助熔劑者,已知含有如松脂之類具有羧酸基之化合物當作活性劑者(專利文獻1,申請專利範圍第2項)。
但是,近年,BGA組件為了高機能化而搭載複數個晶片,而有體積變大的傾向。
然而,當BGA組件的體積變大,在洗淨/除去助熔劑時,BGA組件本身成為洗淨的障礙,會發生未除去的助熔劑(助熔劑殘渣)。結果,在後續步驟之底部填充膠樹脂的加熱硬化時,助熔劑殘渣中的活性劑成分會引起腐蝕反應之問題。
另一方面,也已知活性劑的活性低不易成為腐蝕原因之無洗淨(無洗淨必要)助熔劑(專利文獻2)。然而,使用無洗淨助熔劑時,於底部填充膠樹脂的加熱硬化時,這種無洗淨助熔劑本身會產生分解氣體,而有破壤BGA組件之
問題。
再者,BGA組件的體積變大時,填充底部填充膠樹脂時,BGA組件的接合部成為填充的障礙。尤其,在印刷配線基板表面有表面凹凸(電路的凹凸、阻焊劑的凹凸等)時,凹凸部分的各角落無法完全填充底部填充膠樹脂,而會產生孔洞或未充填空隙。結果,製品的品質、可靠性等顯著下降。再者,未注意到此種孔洞等,在進行後續步驟的底部填充膠樹脂硬化時,則已經無法修復製品,只好將其廢棄,而使得良率下降。
專利文獻1:日本特開2004-152936號公報
專利文獻2:日本特開2002-237676號公報
本發明之目的是提供一種可發揮如下述效果的活性樹脂組成物,及使用此等組成物的表面組裝方法。
1)在表面組裝方法中,不需要洗淨助熔劑的步驟,可以削減製造成本,及可能提高生產性。
2)在硬化後的塗佈樹脂及底部填充膠樹脂等之中完全不存在氣泡或孔洞等,可以提高製品的可靠性。
3)硬化後的塗佈樹脂是熱非常的安定,故即使曝露在高溫下也不會有腐蝕反應或有發生分解氣體。
再者,較佳為本案發明之目的是:
4)容易充填底部填充膠樹脂。結果,即使在組裝大型BGA組件時,在底部填充膠樹脂的填充硬化部不會產生氣泡、孔洞、其他未填充空隙,可確實接合(接著),可提高製品的可靠性。
5)提供保存安定性提高的活性樹脂組成物。
為了解決上述課題,本發明人等精心研究之結果,遂完成以下之本案發明。
亦即,本案第1發明提供一種活性樹脂組成物,係相對於環氧樹脂100重量份,分別含有封端羧酸(blocked carboxylic acid)化合物1至50重量份及/或羧酸化合物1至10重量份、以及硬化反應開始溫度在150℃以上的硬化劑1至30重量份。
本案第2發明提供一種表面組裝方法,係在印刷配線基板表面的至少一部分塗佈本案第1發明的活性樹脂組成物,在印刷配線基板上搭載表面組裝組件,進行迴焊後,將塗佈樹脂加熱硬化的表面組裝方法,係於所塗佈的活性樹脂組成物之加熱硬化前,進行真空操作及/或未達所塗佈的活性樹脂組成物之硬化反應開始溫度的加熱。
本案第3發明提供一種表面組裝方法,係在印刷配線基板表面的至少一部分塗佈本案第1發明的活性樹脂組成物,在印刷配線基板上搭載表面組裝組件,進行迴焊,填充底部填充膠樹脂後,將已塗佈活性樹脂組成物及底部填充膠樹脂加熱硬化的表面組裝方法,係於填充底部填充膠
樹脂前及/或填充底部填充膠樹脂後,進行真空操作及/或以低於所塗佈的活性樹脂組成物與底部填充膠樹脂的任一硬化反應開始溫度的溫度進行加熱。
本案第4發明提供如本案第2發明或第3發明的表面組裝方法,係在印刷配線基板表面的至少一部分前述金屬表面塗佈活性樹脂組成物。
本案第5發明提供如本案第2發明至第4發明中任一表面組裝方法,係在印刷配線基板表面搭載表面組裝組件之前,進行塗佈樹脂的乾燥及/或塗佈樹脂之軟化點溫度以上且未達硬化反應開始溫度之加熱。
本案第6發明提供一種印刷配線板表,係藉由本案第2發明至第5發明的任一表面組裝方法而製造。
本發明藉由使用活性樹脂組成物,可發揮如下述之效果。
1)在表面組裝方法中,不需要助熔劑的洗淨步驟,可削減製造成本、提高生產性。
2)在硬化後的塗佈樹脂及底部填充膠樹脂完全不存在氣泡或孔洞等,提高製品的可靠性。
3)硬化後的塗佈樹脂非常熱安定,即使曝露在高溫也不會產腐蝕反應或分解氣體。
4)填充底部填充膠樹脂變得容易。結果,即使在組裝大型BGA組件時,在底部填充膠樹脂的填充硬化部也不會產生氣泡、孔洞、其他未填充空隙,可確實接合(接著),
而提高製品的可靠性。
再者,於本案相關之活性樹脂組成物的較佳態樣中,5)可提高活性樹脂組成物的保存安定性。
以下,使用圖面詳述本案發明的最佳實施形態。
在本案的表面組裝方法中所使用之活性樹脂組成物含有環氧樹脂。環氧樹脂具有作為基質樹脂的功能。又,環氧樹脂在硬化反應時也與後述之活性劑反應,具有使活性劑失活的功能。根據此,硬化後的活性樹脂組成物,變成非常的熱安定,加熱時(例如,底部填充膠樹脂的加熱硬化時)不會產生腐蝕反應或分解氣體。
作為此種環氧樹脂,可列舉如室溫中的固體狀環氧樹脂。作為環氧樹脂的軟化點溫度,例如以70至150℃(尤其是80至100℃)為佳。具體的,作為固體狀環氧樹脂,可列舉如甲酚酚醛清漆型環氧樹脂、二環戊二烯系環氧樹脂、聯苯系環氧樹脂、雙酚A型固形環氧樹脂、固形的脂環式環氧樹脂等。
作為其他的環氧樹脂,可列舉如在室溫為液狀的環氧樹脂。液狀環氧樹脂是指在常溫中為液狀或是半固體狀態之環氧樹脂。例如,可列舉如在常溫具有流動性之環氧樹脂。作為此種液狀環氧樹脂,例如黏度(室溫,mPa.s)為20000以下,尤其是以1000至10000為佳。
具體的,作為液狀環氧樹脂,可列舉如液狀雙酚A型環氧樹脂,例如下式所示者等,
[上述式中,n表示0或是1。G表示縮水甘油基。],此等可使用1種以上。再者,作為其他液狀環氧樹脂之具體例,液狀雙酚F型環氧樹脂,例如,可列舉如下式所示者等,
[上述式中,n表示0或是1。G表示縮水甘油基。],此等可使用1種以上。
又,作為其他的環氧樹脂,具體上可列舉如萘型者、二苯硫醚(硫醚)型者、三硫型者、脂環式型者、由醇類所調製者、二丙烯基雙A型者、甲基間苯二酚型者、雙酚AD型者、及N,N,O-參(縮水甘油基)-p-胺基酚等,此等可以使用1種以上。
作為較佳液狀環氧樹脂,可列舉如雙酚A型環氧樹脂、雙酚F型環氧樹脂、N,N,O-參(縮水甘油基)-p-胺基酚、雙酚AD型環氧樹脂等,此等可以使用1種以上。
在活性樹脂組成物中,含有封端羧酸化合物及/或羧酸化合物。此等是具有作為活性劑之功能。
封端羧酸化合物是藉由將羧酸化合物與封端化劑反應而合成。使用封端羧酸化合物時,可抑制低溫副反應,可提高活性樹脂組成物之保存安定性。
作為封端羧酸化合物的一合成原料的羧酸化合物,可列舉1價(單)羧酸化合物。作為合成原料的羧酸化合物的
具體例,可列舉如芳香族1價羧酸[(羥基)安息香酸、二羥基安息香酸、苯基醋酸、安息香酸、甲苯甲酸、萘甲酸]、飽和1價羧酸[醋酸、丙酸、酪酸、2-甲基丙酸(異酪酸)、2-乙基已酸、十二烷酸、環己酸羧酸等]、不飽和1價羧酸[丙烯酸、甲基丙烯酸、巴豆酸、油酸等]、松香酸類等。
作為合成原料的羧酸化合物的其他具體例,可列舉如多價(多元)羧酸化合物。具體上可列舉如脂肪族多價羧酸(草酸、丙二酸、琥珀酸、戊二酸、己二酸、壬二酸、癸二酸、環癸烷二羧酸、丁烷四羧酸、1,2,3,4-丁烷四羧酸等)、芳香族多價羧酸[鄰苯二甲酸、間苯二甲酸、對苯二甲酸、偏苯三酸、均苯四酸、萘二羧酸、苯羧酸、(尤其是羧基數為3至4者)等]、脂環族多價羧酸[四氫羧酸、六氫羧酸、四氫苯二甲酸、六氫苯二甲酸等]、不飽和脂環族多價羧酸[馬來酸、富馬酸、衣康酸等]、具有2個以上羥基(以2至50個為佳)之多醇與酸酐進行半酯化而得之多價羧酸類、具有2個以上異氰酸基(以2至50個為佳)之多異氰酸酯與羥基羧酸或胺基酸進行加成反應而得之多價羧酸類、不飽和羧酸單獨或共聚合而得之多價羧酸類、多元醇與多價羧酸反應而得之聚酯型多價羧酸、羧酸聚合物(苯乙烯馬來酸共聚合物、丙烯酸共聚合物等)。
作為封端羧酸化合物的其他合成原料的封端化劑,係在活性樹脂組成物之硬化反應開始溫度中,試圖除去羧基的封端(保護)基者為佳。作為合成原料之封端化劑的具體例,可列舉如在分子中有1個乙烯基醚基之化合物[脂肪族
乙烯基醚類(甲基乙烯基醚、乙基乙烯基醚、異丙基乙烯基醚、正丙基乙烯基醚、異丁基乙烯基醚、正丁基乙烯基醚、環己基乙烯基醚、丙基乙烯基醚、丁基乙烯基醚、2-乙基環己基乙烯基醚、三級丁基乙烯基醚、2-乙基已基乙烯基醚等)、環狀乙烯基醚類(2,3-二氫呋喃、2,3-二氫-2H-吡喃、3,4-二氫-2H-吡喃、3,4-二氫-2-甲氧基-2H-吡喃、3,4-二氫-4,4-二甲基-2H-吡喃-2-酮、3,4-二氫-2-乙氧基-2H-吡喃、3,4-二氫-2H-吡喃-2-羧酸鈉、3,4-二氫呋喃等)、脂肪族乙烯基硫醚化合物(二氫呋喃類等)、環狀乙烯基醚化合物(二氫-2H-吡喃等)、及環狀乙烯基硫醚化合物等]。
作為合成原料之封端化劑的其他具體例,可列舉如在分子中有2個以上乙烯基醚基的化合物[二乙烯基醚化合物(乙二醇二乙烯基醚、1,2-丙二醇二乙烯基醚、1,3-丙二醇二乙烯基醚、1,3-丁二醇二乙烯基醚、1,4-丁二醇二乙烯基醚、2,3-丁二醇二乙烯基醚、1,6-己二醇二乙烯基醚、二乙二醇二乙烯基醚、三乙二醇二乙烯基醚、戊二醇二乙烯基醚、二甲基丁二醇二乙烯基醚、3-甲基-1,5-戊二醇二乙烯基醚、加氫雙酚A二乙烯基醚、新戊二醇二乙烯基醚、1,8-辛二醇二乙烯基醚、1,4-環己烷二甲醇二乙烯基醚、2-甲基-1,3-丙烷二醇二乙烯基醚、1,4-環己烷二醇二乙烯基醚、1,9-壬二醇二乙烯基醚、三乙二醇二乙烯基醚、四乙二醇二乙烯基醚、雙酚A二乙烯基醚、加氫雙酚A二乙烯基醚等)、二乙烯基硫醚化合物等]。
作為封端羧酸化合物,具體上,可列舉如環己烷二羧
酸之雙烷基酯、(甲基)丙烯酸1-異丙氧基乙酯、(甲基)丙烯酸1-乙氧基乙酯、(甲基)丙烯酸1-三級丁氧基乙酯、(甲基)丙烯酸1-(1-甲基己氧基)乙酯、(甲基)丙烯酸1-(1,1-二甲基丙氧基)乙酯、1-異丙氧基乙基(甲基)丙烯醯胺、1-乙氧基乙基(甲基)丙烯醯胺、1-三級丁氧基乙基(甲基)丙烯醯胺、1-(1-甲基己氧基)乙基(甲基)丙烯醯胺、1-(1,1-二甲基丙氧基)乙基(甲基)丙烯醯胺、1,2,4-苯三羧酸-2,4-雙(丙氧基乙基)-1-((甲基)丙烯醯氧基乙基)酯、及此等之(共)聚合物等,可以使用此等之1種以上。
作為市售品的封端羧酸化合物,具體可列舉如Suntaseto G、Suntaseto FK-03、Suntaseto FK-05、Suntaseto FK-16、Suntaseto KM-01、NOFCURE TN-2、NOFCURE OP、及NOFCURE TY501(皆為日本油脂公司製)等,可以使用此等之1種以上。
可以使用羧酸化合物本身來取代封端羧酸化合物或與其併用,作為羧酸化合物,可使用作為上述封端羧酸化合物的合成原料所例示者的一種以上。
活性樹脂組成物中含有硬化劑。硬化劑的硬化反應開始溫度是在150℃以上(而以160至200℃為佳)。藉由使用如此高溫反應性的硬化劑,在短時間的加熱不會產生硬化反應,因此即使在迴焊時也可以防止活性樹脂組成物的硬化。具體上,作為硬化劑,可列舉如二氰二胺(dicyan diamide)等。
在活性樹脂組成物中亦可含有溶劑。尤其是,使用固
狀物(固狀環氧樹脂等)時,以含有溶劑為佳。溶劑的沸點,以未達硬化反應開始溫度,尤其是在150至200℃為佳。具體上,作為溶劑,可列舉如二醇醚類、乙二醇醚酯類、丙二醇醚酯類、N-甲基吡咯烷酮等。
在活性樹脂組成物中,亦可含有作為其他之添加劑者:聚二甲基矽氧烷等消泡劑、矽烷偶合劑、AEROSIL(增黏劑)等。
活性樹脂組成物的組成中,相對於100重量份環氧樹脂,分別含有各成分如下所示。亦即,含有封端羧酸化合物1至50(而以10至40為佳)重量份及/或羧酸化合物1至10(而以2至5為佳)重量份,以及硬化劑1至30(而以2至7為佳)重量份。溶劑是10至300(尤其是以30至100為佳)重量份為宜。
在活性樹脂組成物含有或不含有溶劑時,可以是固狀也可以是液狀。然而,較佳為活性樹脂組成物在除去溶劑(或是樹脂乾燥)後,變成軟化點溫度為50至150℃(尤其是以80至120℃為佳)的固狀者。軟化點溫度過低時,即使在室溫也會呈現黏著性而有因垃圾等的付著而混入異物之虞,相反的過高時,迴焊組裝後之真空脫泡會變得不充分。再者,作為活性樹脂組成物,以冷卻後即使經固化,亦可藉由加熱再軟化者為佳。
本案的表面組裝方法之一態樣中,首先,在印刷配線基板(第1A圖,1)表面上之至少一部分(包含全部表面)塗佈本案的活性樹脂組成物(第1B圖,3)(以下,將所塗佈之
活性樹脂組成物稱為「塗佈樹脂」)。例如,可以塗佈在印刷配線基板上之至少一部分的金屬表面上。作為金屬,例如可列舉純金屬(銅等)及合金(焊劑等)。此等可為一種以上。更具體的,至少可以塗佈在電路之一部分及/或至少墊片部(第1A圖,2)之一部分。再者,亦可塗佈在接合對象的表面組裝組件(第1C圖,4)之至少焊劑表面上。具體的,也可以只在表面組裝品的全表面或凸塊部(第1C圖,9)塗佈。塗佈樹脂的層厚通常是10至50μm。
之後,因應需要(例如,使用固狀環氧樹脂及溶劑時),使塗佈樹脂乾燥,可去除溶劑。該乾燥後之塗佈樹脂常變成無黏性的塗膜。作為乾燥之條件,例如可以是80至120℃,10至30分鐘。
再者,因應需要(例如,乾燥後的塗佈樹脂變成固狀),可使塗佈樹脂進行塗佈樹脂的軟化點溫度以上且未達硬化反應開始溫度的加熱(也稱為「加熱A」)。藉由此加熱A,塗佈樹脂通常呈現黏性,使表面組裝組件變得容易組裝。作為加熱條件,例如可以是80至180℃,10秒至10分鐘。
塗佈樹脂的乾燥與加熱A,可以只進行任一者,或是將兩者依序(不論順序)或同時進行。
之後,將表面組裝組件(第1C圖,4)搭載在印刷配線基板(第1C圖,1)上。本案發明亦可使用在大型的表面組裝組件,例如可使用在50mm正方以上者。作為表面組裝組件,具體上,可列舉如封裝組件(BGA組件、CSP組件、MCM組件、IPM組件、IGBT組件等)、半導體晶片等。
之後,進行迴焊(第1D圖)。作為迴焊之條件,例如可以是240至300℃,10秒至10分鐘。加熱時間過長時,由於會引起塗佈樹脂的硬化反應,因而不佳。
之後,進行真空操作及/或未達塗佈樹脂的硬化反應開始溫度的加熱(亦稱為「加熱B」)。
真空操作是因以下理由等而進行。亦即,當迴焊時,在熔融焊劑之表面的氧化物等會藉由塗佈樹脂(活性樹脂組成物)而還原等,結果會生成水等。此生成之水等直接殘留在塗佈樹脂時,於塗佈樹脂的加熱硬化時,會有蒸發膨漲,於硬化後的塗佈樹脂中產生氣泡或孔洞等之慮。因此,應預先去除此種生成之水等,而後進行真空操作。又,藉由真空操作,進行塗佈樹脂等的脫泡。真空操作的條件,例如是以真空度10至80000(尤其是在100至50000)Pa、1至60(尤其是5至30)分鐘為佳。
加熱B雖是在未達塗佈樹脂硬化反應開始溫度中進行,但塗佈樹脂為固狀時以在其軟化點溫度以上進行為佳。藉由加熱B,進行樹脂等脫水/脫泡。再者,塗佈樹脂為固狀時,藉由加熱B而軟化塗佈樹脂,藉由此軟化塗佈樹脂吸收(平坦化)/均勻印刷配線基板表面上的凹凸。結果,進行後續步驟中底部填充膠樹脂的填充時,該填充變得容易,在底部填充膠樹脂的填充硬化部變得不會產生氣泡、孔洞、其他未填充空隙。具體的,作為加熱的條件,例如可以是60至150℃(尤其是80至120℃)、0.1至60(尤其是1至10)分鐘為佳。
真空操作與上述加熱B,可以只進行任一者,或是兩者同時進行或是(不論順序)依序進行。理想的是至少進行真空操作。
之後,加熱硬化塗佈樹脂(第1E圖,10)。作為加熱硬化條件,硬化劑的硬化反應開始溫度以上,具體而言可以是150至200℃,1至4小時。此時,封端羧酸化合物及/或是羧酸化合物與環氧樹脂反應,而失去作為活性劑的活性。因此,不會成為因腐蝕等而降低可靠性的原因。
如上述的操作,可以製造本案相關的印刷配線板。
在本案的表面組裝方法的其他態樣中,首先,與上述同樣操作,進行完成迴焊步驟。亦即,在印刷配線基板(第2A圖,1)表面的至少一部分塗佈前述活性樹脂組成物(第2B圖,3),將表面組裝組件(第2C圖,4)搭載在印刷配線基板(第2C圖,1)上,進行迴焊(第2D圖)。
於是,在封裝化等目的下,進行底部填充膠樹脂(第2E,11)之填充。具體上,對印刷配線基板與表面組裝組件間之空隙,填充底部填充膠樹脂。作為底部填充膠樹脂,以硬化反應開始溫度為100至250℃(尤其是150至200℃)者為佳。具體上,作為底部填充膠樹脂,可使用環氧系樹脂、矽氧系樹脂、聚醯亞胺系樹脂、聚烯烴系樹脂、氰酸酯系樹脂、酚系樹脂、萘系樹脂等的一種以上。
在填充底部填充膠樹脂前及/或是之後,進行真空操作及/或以低於塗佈樹脂與底部填充膠樹脂的任一硬化溫度的溫度之加熱(稱為「加熱C」)。例如在迴焊後,進行
以下i)至iii)的任一者,之後,加熱硬化樹脂(塗佈樹脂與底部填充膠樹脂)。
i)進行真空操作及/或加熱C,填充底部填充膠樹脂。
ii)進行真空操作及/或加熱C,填充底部填充膠樹脂後,進行真空操作及/或加熱C。
iii)填充底部填充膠樹脂後,進行真空操作及/或加熱C。
真空操作及/或加熱C,雖然可只進行任一者,或使兩方同時或是(不論順序)依序進行,但理想的是至少也要進行真空操作,更佳是在填充底部填充膠樹脂前進行加熱C。
真空操作是可以與前述同樣操作來進行。藉由真空操作,進行脫水等及樹脂(塗佈樹脂、填充樹脂等)之脫泡等。
加熱C是可以與前述加熱B同樣操作來進行。藉由加熱C,可容易地脫水、脫泡、進一步的填充底部填充膠樹脂。但是,填充底部填充膠樹脂後,進行加熱C時,塗佈樹脂及底部填充膠樹脂以不會引起硬化反應的方式,以低於此等任何之硬化反應開始溫度的溫度來加熱。
之後,加熱硬化塗佈樹脂及底部填充膠樹脂(第2F圖,各為10、6)。作為加熱硬化的條件,係以硬化劑的硬化反應開始溫度以上且底部填充膠樹脂的硬化溫度以上,具體而言可為150至200℃,1至12小時。
如上述之操作,製造本案相關的底部填充膠樹脂填充印刷配線板。
以下,以實施例具體說明本案發明。
〈活性樹脂組成物的調製〉
.調製實施例1至5
根據表1所示配合組成,均勻混合各配合成分,調製成活性樹脂組成物(各調製實施例1至5)。
〈印刷配線板的製造〉
.實施例1至5
在10mm正方的印刷配線基板[墊片(第4A圖,2)間距0.6mm、墊片徑0.3mm、墊片數25個](第3圖;第4A圖,1)的全部面上,將上述活性樹脂組成物(各調製實施例1至5)(第4B圖,3)用網版印刷塗佈(第4B圖)。
之後,將此印刷配線基板於100℃加熱20分鐘,使塗佈樹脂乾燥。冷卻到室溫後之印刷配線基板的塗佈樹脂是無黏性的固狀,表面的鉛筆硬度是HB。
之後,將上述印刷配線基板加熱到120℃時,軟化塗佈樹脂,呈現黏性。
之後,在塗佈樹脂軟化的狀態,以安裝機(mounter)將4mm正方的半導體晶片([凸塊(第4C圖,9)間距0.6mm、凸塊徑0.3mm、凸塊數25個](第5圖;第4C圖,4)設置在印刷配線基板上(第4C圖)。
之後,將安裝有半導體晶片(第4C圖,4)之印刷配線基板(第4C圖,1)通過迴焊裝置(預熱加熱條件:150至180℃、60秒,迴焊加熱條件:220至260℃、30秒),進行焊接(第4D圖)。
冷卻經焊劑焊接上述半導體晶片之印刷配線基板時,
塗佈樹脂表面的鉛筆硬度變成HB的固狀。
之後,將上述印刷配線基板再度加熱到120℃時,塗佈樹脂再度軟化,而呈現黏性。於是,在此溫度下,進行真空操作(真空度為100Pa,2分鐘)。
之後,將上述印刷配線基板加熱(190℃,2小時),使活性樹脂組成物硬化,製作印刷配線板(各實施例1至5)。硬化後之塗佈樹脂,表面的鉛筆硬度為8H,係完全硬化(第4E圖)。
由上述製作之印刷配線板(各實施例1至5)以物理的剝開上述半導體晶片,將已硬化之活性樹脂組成物以20倍之放大鏡觀察時,確認沒有氣泡及孔洞。
.比較例1
除了不進行活性樹脂組成物之加熱硬化前的120℃的加熱及真空操作之外,其餘與前述印刷配線板(實施例1)的製造方法相同操作,製作印刷配線板(比較例1)。
由上述製作的印刷配線板(比較例1)以物理的剝開半導體晶片,將已硬化之活性樹脂組成物以20倍之放大鏡觀察時,確認氣泡及孔洞有17個,其大小是0.5至2mm。
.實施例6
首先,調製下述組成的均勻糊狀活性樹脂組成物(調製實施例6)。
組成:甲酚酚醛清漆型環氧樹脂(軟化點溫度94℃)100重量份、p-羥基安息香酸4重量份、二氰胺5重量份、丙二醇甲基醚醋酸酯50重量份。
在100mm正方的印刷配線基板[墊片間距0.6mm、墊片徑0.3mm、墊片數1010個](第6圖,1)的全面上,將上述糊狀活性樹脂組成物(調製實施例6)用網版印刷塗佈。
之後,將該印刷配線基板加熱到100℃、20分鐘,使塗佈樹脂乾燥。冷卻到室溫後的印刷配線基板之塗佈樹脂是無黏性的固狀,表面之鉛筆硬度是HB。
之後,將上述印刷配線基板加熱到120℃時,塗佈樹脂軟化,呈現黏性。
之後,在塗佈樹脂軟化的狀態,用安裝機將70mm正方的BGA組件([凸塊間距0.6mm、凸塊徑0.3mm、凸塊數1010個](第7圖,4),設置在印刷配線基板上。
之後,將安裝有BGA組件之印刷配線基板,通過設定在尖峰溫度260℃的迴焊裝置,進行焊劑焊接。
冷卻經焊劑焊接上述BGA組件之印刷配線基板時,塗佈樹脂成為表面之鉛筆硬度為HB的固狀。
之後,將上述印刷配線基板,再度加熱到120℃時,塗佈樹脂再度軟化,呈現黏性。於是,在此溫度下,進行真空操作(真空度為150Pa,60分鐘)。
之後,將上述印刷配線基板加熱(190℃,2小時),使活性樹脂組成物硬化,製作印刷配線板(實施例6)。硬化後之塗佈樹脂,表面的鉛筆硬度為8H,係完全硬化。
由上述製作的印刷配線板(實施例6)以物理的剝開BGA組件,將已硬化之活性樹脂組成物以20倍之放大鏡觀察時,確認沒有氣泡及孔洞。
.實施例7
首先,進行與前述印刷配線板(實施例6)的製造方法同樣操作,來完成迴焊步驟。
冷卻經焊劑焊接上述BGA組件之印刷配線基板時,塗佈樹脂成為表面的鉛筆硬度為HB之固狀。
之後,將上述塗佈樹脂再度加熱到120℃時,再度軟化,呈現黏性。
之後,在此溫度下,進行底部填充膠樹脂(日立化成工業公司製,「CEL-C-3720」)的充填。
之後,在此溫度下,進行真空操作(真空度為150Pa,30分鐘)。
之後,將上述印刷配線基板加熱(190℃,2小時),使活性樹脂組成物及底部填充膠樹脂硬化,製作印刷配線板(實施例7)。
有關上述製作的印刷配線板(實施例7),以X光觀察時,確認已硬化的活性樹脂組成物及底部填充膠樹脂沒有任何氣泡及孔洞,同時也確認沒有底部填充膠樹脂的未填充空隙。
.實施例8至12
除了使用各調製實施例1至5的活性樹脂組成物來替代調製實施例6的活性樹脂組成物之外,其餘與前述印刷配線板(實施例7)的製造方法同樣操作,製作印刷配線板(各實施例8至12)。
有關上述製作的印刷配線板(各實施例8至12),以X
光觀察時,確認已硬化的活性樹脂組成物及底部填充膠樹脂沒有任何氣泡及孔洞,同時也確認沒有底部填充膠樹脂的未填充空隙。
.比較例2
除了不進行活性樹脂組成物及底部填充膠樹脂之加熱硬化前的120℃的加熱及真空操作之外,其餘與前述印刷配線板(實施例8)的製造方法相同操作,製作印刷配線板(比較例2)。
有關上述製作的印刷配線板(比較例2),以X光觀察時,確認已硬化的活性樹脂組成物及底部填充膠樹脂有氣泡及孔洞22個,其大小是0.5至2mm,同時確認底部填充膠樹脂的未填充空隙有2處,其大小是4mm及7mm。
〈活性樹脂組成物的各種性能試驗〉
.焊劑連接性試驗
使用保存期間0日的活性樹脂組成物,與前述印刷配線板(各實施例1至5)的製造方法相同操作,進行完成迴焊步驟。之後,冷卻印刷配線板,自印刷配線基板強制剝離BGA組件。於是,調查在印刷配線板的焊盤(land)上,凸塊焊劑25個之內,到底有幾個附著。在表1中,表示附著的焊劑比率(焊劑焊接比率)。
.25℃保存安定性試驗
使用各種保存期間的不同活性樹脂組成物,代替保存期間為0日的活性樹脂組成物,進行上述焊劑連接性試驗。於是,調查可以達成(維持)保存期間0日時的焊劑焊接率
之活性樹脂組成物的保存期間。在表1中,表示此之保存期限。
1、7‧‧‧印刷配線基板
2‧‧‧墊片焊劑
3‧‧‧未硬化的活性樹脂組成物(塗佈樹脂)
4‧‧‧表面組裝組件(半導體晶片或BGA組件)
5‧‧‧裸晶片
6‧‧‧已硬化之底部填充膠樹脂
8‧‧‧電路
9‧‧‧凸塊焊劑
10‧‧‧已硬化之活性樹脂組成物(塗佈樹脂)
11‧‧‧未硬化的底部填充膠樹脂
第1圖係用以說明本案之表面組裝方法的一態樣之步驟截面圖。
第2圖係用以說明本案之表面組裝方法的其他態樣之步驟截面圖。
第3圖係實施例中所使用的印刷配線基板之平面圖(A)及其a-a’切斷截面圖(B)。
第4圖係用以說明實施例中所示表面組裝方法的一態樣之步驟截面圖。
第5圖係實施例中所使用的半導體晶片之底面圖(A)及其a-a’切斷截面圖(B)。
第6圖係實施例中所使用的其他印刷配線基板之平面圖(A)及其a-a’切斷截面圖(B)。
第7圖係實施例中所使用的BGA組件之底面圖(A)及其a-a’切斷截面圖(B)。
1、7‧‧‧印刷配線基板
2‧‧‧墊片焊劑
3‧‧‧未硬化的活性樹脂組成物(塗佈樹脂)
4‧‧‧表面組裝組件(半導體晶片或BGA組件)
5‧‧‧裸晶片
6‧‧‧已硬化之底部填充膠樹脂
8‧‧‧電路
9‧‧‧凸塊焊劑
10‧‧‧已硬化之活性樹脂組成物(塗佈樹脂)
11‧‧‧未硬化的底部填充膠樹脂
Claims (10)
- 一種活性樹脂組成物,相對於環氧樹脂100重量份,分別含有封端羧酸化合物1至50重量份、以及硬化反應開始溫度150℃以上的硬化劑1至30重量份。
- 一種表面組裝方法,係在印刷配線基板表面的至少一部分塗佈申請專利範圍第1項所述之活性樹脂組成物,在印刷配線基板上搭載表面組裝組件,進行迴焊,進行以真空操作及/或未達塗佈樹脂之硬化溫度且加熱溫度範圍60至150℃、加熱溫度時間範圍0.1至60分鐘的加熱,其後,使塗佈樹脂加熱硬化的表面組裝方法。
- 一種表面組裝方法,係在印刷配線板表面的至少一部分塗佈申請專利範圍第1項所述之活性樹脂組成物,在印刷配線基板上搭載表面組裝組件,進行迴焊,填充底部填充膠(underfill)樹脂後,使所塗佈的活性樹脂組成物及底部填充膠樹脂加熱硬化的表面組裝方法,其中,在迴焊後且於底部填充膠樹脂填充之前及/或底部填充膠樹脂填充之後且塗佈樹脂及底部填充膠樹脂之加熱硬化前,進行真空操作及/或以低於所塗佈的活性樹脂組成物與底部填充膠樹脂的任一硬化反應開始溫度的溫度且加熱溫度範圍60至150℃、加熱溫度時間範圍0.1至60分鐘之加熱。
- 如申請專利範圍第2項所述之表面組裝方法,其中,在印刷配線基板表面的至少一部分的金屬表面塗佈前述活性樹脂組成物。
- 如申請專利範圍第3項所述之表面組裝方法,其中,在印刷配線基板表面至少一部分的金屬表面塗佈前述活性樹脂組成物。
- 如申請專利範圍第2項所述之表面組裝方法,其中,在印刷配線基板上搭載表面組裝組件前,進行塗佈樹脂的乾燥及/或是塗佈樹脂的軟化點溫度以上且未達硬化反應開始溫度之加熱。
- 如申請專利範圍第3項所述之表面組裝方法,其中,在印刷配線基板上搭載表面組裝組件前,進行塗佈樹脂的乾燥及/或是塗佈樹脂的軟化點溫度以上且未達硬化反應開始溫度之加熱。
- 如申請專利範圍第4項所述之表面組裝方法,其中,在印刷配線基板上搭載表面組裝組件前,進行塗佈樹脂的乾燥及/或是塗佈樹脂的軟化點溫度以上且未達硬化反應開始溫度之加熱。
- 如申請專利範圍第5項所述之表面組裝方法,其中,在印刷配線基板上搭載表面組裝組件前,進行塗佈樹脂的乾燥及/或是塗佈樹脂的軟化點溫度以上且未達硬化反應開始溫度之加熱。
- 一種印刷配線基板,係藉由申請專利範圍第2至9項中任一項所述之表面組裝方法而製造。
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