CN102414828A - 具有基于聚硅氮烷的阻挡层的太阳能电池 - Google Patents

具有基于聚硅氮烷的阻挡层的太阳能电池 Download PDF

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CN102414828A
CN102414828A CN2010800187361A CN201080018736A CN102414828A CN 102414828 A CN102414828 A CN 102414828A CN 2010800187361 A CN2010800187361 A CN 2010800187361A CN 201080018736 A CN201080018736 A CN 201080018736A CN 102414828 A CN102414828 A CN 102414828A
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K·罗德
S·斯图加诺维克
J·斯克涅比斯
C·考弗曼
H-W·斯考克
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Abstract

薄膜太阳能电池(10),包括由金属或玻璃构成的基材(1)、基于聚硅氮烷的介电阻挡层(2)和铜-铟-硫化物(CIS)或铜-铟-镓-硒化物(CIGSe)型光伏层状结构(4)。

Description

具有基于聚硅氮烷的阻挡层的太阳能电池
本发明涉及黄铜矿太阳能电池,包括基材、光伏层状结构和处于二者之间的介电阻挡层。在所述基材和光伏层状结构之间设置的介电阻挡层是电绝缘的,并且使所述光伏层状结构屏蔽于由所述基材扩散出来并损害太阳能电池效率的外来原子。本发明的太阳能电池特别是具有铜-铟-硫化物(CIS)或铜-铟-镓-硒化物(CIGSe)型光伏层状结构的薄膜太阳能电池。
此外,本发明涉及黄铜矿基太阳能电池的制备方法。在该方法的范畴内,厚度在100-3000nm范围内的阻挡层通过使聚硅氮烷和添加剂的溶液在20-1000℃,特别是80-200℃范围内的温度下硬化而产生。
鉴于缺乏化石资源,光伏技术作为可更新并且有利环境的能源具有重大意义。太阳能电池将阳光转化为电流。在太阳能电池中晶体硅或非晶硅大多用作光吸收半导体材料。硅的使用带来巨大的成本。与之相反,可以用低得多的成本制备具有由黄铜矿材料,如铜-铟-硫化物(CIS)或铜-铟-镓-硒化物(CIGSe)构成的吸收体的薄膜太阳能电池。
为了迅速推广光伏技术,通常需要改善光伏发电的费效比。为此值得期待的是,一方面提高太阳能电池的效率,另一方面降低生产成本。
通过整体连接可以提高黄铜矿太阳能电池组件的效率。具有整体连接的太阳能电池组件由多个在基材上彼此相邻布置的分开的太阳能电池组成,其以串联的方式彼此电连接。为了整体连接,根据预置的模式,首先划分后触点,其次划分光伏层状结构——通常以条带状。后触点的结构化——所谓的P1节段——以电绝缘基材为先决条件。所述P1节段优选如此实施:沿预定的分隔线借助于聚焦激光束蒸发后触点。
作为黄铜矿太阳能电池的载体材料,使用玻璃或由金属或聚酰亚胺构成的基材薄膜。在此,玻璃被证明是有利的,因为其是电绝缘的,具有光滑的表面并且在制备黄铜矿吸收体层期间提供钠,所述钠从玻璃扩散入吸收体层,并且作为掺杂物改善吸收体层的性质。玻璃的缺点在于其重量大以及缺乏柔韧性。特别地,由于其刚性,玻璃基材不能以低成本的辊对辊方法(Rolle zu Rolle Verfahren)涂覆。
玻璃的另一缺点在于,在以后太阳能电池的使用中,还有钠扩散入黄铜矿吸收体层,其中,在较长的时间段内累积的浓度可以达到一个值,在该值下尤其通过持续的微晶生长而损害黄铜矿吸收体层。
由金属或塑料构成的膜型基材比玻璃轻,并且特别是柔性的,因此其适于通过低成本的辊对辊方法用于制备太阳能电池。但是,视其特性而定,金属薄膜或塑料膜对黄铜矿层复合体的性质产生不良影响,并且还不提供用于吸收体掺杂的钠沉积物。由于升高的温度(有时>500℃)(在太阳能电池制备期间基材暴露于该温度),优选使用由钢或钛构成的金属膜。
为了将太阳能电池整体连接到钛基材或钢基材上,必须在基材和光电吸收体之间置入电绝缘层。此外,该绝缘层应起到扩散阻挡作用,以便阻止损害吸收体层的来自基材的金属离子扩散。例如,由钢扩散的铁原子提高黄铜矿吸收体层中的载流子(电子和空穴)的复合率,由此减少光电流。
在众多的硅基电子器件和由非晶硅或微晶硅构成的太阳能电池中,将硅氧化物(SiOx)用作绝缘层或介电层的材料。在如硅片的基材上由气相或液相沉积此类SiOx层。优选通过CVD、微波等离子体增强CVD(MWPECVD)、PVD(磁控溅射)或溶胶-凝胶法进行沉积。
CVD和PVD法由于昂贵的真空技术装置而与高昂的成本相关,其中所产生的SiOx层在一些基材材料上,特别是在金属上具有低的粘附性和低的机械强度。此外,气相沉积法需要使用高度易燃的和/或有毒的气体,如SiH4、CH4、H2、NH3
借助溶胶-凝胶法制备的SiOx层在金属基材上也具有低的粘附性。此外,溶胶-凝胶材料的耐久性如此低,以至于即使在短暂贮存时独特的材料性质也可能发生显著变化,并且由此制备的层的质量剧烈波动。
此外,现有技术公开了SiOx层,其由聚硅氮烷产生,并且在太阳能电池中用于钝化目的或用于包封。
例如,US 7,396,563公开了借助PA-CVD沉积介电的且钝化的聚硅氮烷层,其中,使用聚硅烷作为CVD前体。
US 4,751,191教导了借助PA-CVD沉积用于太阳能电池的聚硅氮烷层。所获得的聚硅氮烷层以光刻技术结构化,并用于掩蔽金属触点以及用作防反光层。
考虑到现有技术,本发明目的在于,提供具有主要由SiOx构成的介电阻挡层的黄铜矿太阳能电池以及其低成本的制备方法。特别地,本发明的阻挡层应确保高的扩散阻挡作用和电绝缘性与在玻璃或由金属或塑料构成的柔性基材上的良好粘附性相结合,并且具有低的缺陷密度,如孔洞和裂隙。
本发明目的通过包括基材、光伏层状结构和处于二者之间的基于聚硅氮烷的介电阻挡层的黄铜矿太阳能电池得以实现。
以下借助于附图更清楚地阐述本发明。图1以透视视角示出了通过具有基材1、阻挡层2和光伏层状结构4的本发明的太阳能电池10的剖面图。该太阳能电池10优选设置为薄膜太阳能电池并具有铜-铟-硫化物(CIS)或铜-铟-镓-硒化物(CIGSe)型光伏层状结构4。
本发明的太阳能电池10的改进方案的特征在于,
-光伏层状结构4包括由钼构成的后触点41,组成为CuInSe2、CuInS2、CuGaSe2、CuIn1-xGaxSe2其中0<x≤0.5或Cu(InGa)(Se1-ySy)2其中0<y≤1的吸收体42,由CdS构成的缓冲体43,由ZnO或ZnO:Al构成的窗层44以及由Al或银构成的前触点45;
-基材1由包含金属、金属合金、玻璃、陶瓷或塑料的材料构成;
-基材1以膜的形式,特别是以钢膜或钛膜的形式形成;
-阻挡层2由硬化的聚硅氮烷和添加剂在溶剂中的溶液构成,该溶剂优选是二丁基醚;
-阻挡层2含有钠或包括含钠的前驱层21;
-阻挡层2具有100-3000nm,优选200-2500nm,以及特别是300-2000nm的厚度;
-阻挡层2具有根据DIN IEC 60093测定的大于1·109MΩ·cm,优选大于1·1010MΩ·cm,和特别地大于1·1011MΩ·cm的比体积电阻;
-阻挡层2在基材1,特别是在钢膜和钛膜上具有根据DIN-EN-ISO2409用20mm胶带宽度测定的大于5N,优选大于7N,和特别地大于10N的粘附强度;
-所述太阳能电池10包括包封层5,该包封层由硬化的聚硅氮烷和添加剂在溶剂中的溶液构成;
-所述阻挡层2和任选地包封层5由通式(I)的聚硅氮烷制备,
-(SiR′R″-NR″′)n-(I)
其中R′、R″、R″′相同或不同,并且彼此独立地为氢或任选取代的烷基、芳基、乙烯基或(三烷氧基甲硅烷基)烷基残基,其中n为整数并如此确定n,使得所述聚硅氮烷具有150-150000g/mol,优选50000-150000g/mol,和特别为100000-150000g/mol的数均分子量;
-至少一种聚硅氮烷选自其中R′、R″和R″′=H的全氢聚硅氮烷。
制备本发明的太阳能电池的方法包括以下步骤a)-g):
a)用含有至少一种通式(I)的聚硅氮烷的溶液涂覆由金属、金属合金、玻璃、陶瓷或塑料构成的基材
-(SiR′R″-NR″′)n-(I)
其中R′、R″、R″′相同或不同,并且彼此独立地为氢或任选取代的烷基、芳基、乙烯基或(三烷氧基甲硅烷基)烷基残基,其中n为整数并如此确定n,使得所述聚硅氮烷具有150-150000g/mol,优选50000-150000g/mol,和特别为100000-150000g/mol的数均分子量,
b)通过蒸发去除溶剂,其中在基材上获得厚度为100-3000nm,优选200-2500nm,和特别为300-2000nm的聚硅氮烷层,
c)任选地一次或多次重复步骤a)和b),
d)通过i)加热到20-1000℃,特别是80-200℃范围内的温度和/或ii)用180-230nm范围内的波长段的紫外线辐照,使所述聚硅氮烷层硬化,其中所述加热和/或辐照在1min-14h,优选1min-60min和特别是1min-30min期间内进行,优选在由含水蒸气的空气或氮气构成的气氛下,
e)任选地,在20-1000℃,优选60-130℃温度下,在相对湿度为60-90%的空气中,在1min-2h,优选30min-1h期间内,对所述聚硅氮烷层进行后硬化,
f)施加基于黄铜矿的光伏层状结构,和
g)按照步骤a)-e)任选地将包封层施加到该光伏层状结构上。
本发明方法的有利实施方式的特征在于,用于涂覆的聚硅氮烷溶液含有一种或多种下述成分:
-至少一种其中R′、R″和R″′=H的全氢聚硅氮烷;
-催化剂,以及任选的其他添加剂;
-钠,优选以醋酸钠或四硼酸钠的形式。
作为将含钠化合物混入聚硅氮烷溶液之外的选择,在步骤d)或任选地e)之后,即在步骤f)中施加光伏层状结构之前,在聚硅氮烷层上沉积含钠前驱层,优选通过气相沉积氟化钠。
根据本发明优选的是设置成柔性条带形式的基材,该基材使得黄铜矿太阳能电池可以以辊对辊方法制备。
在用于制备本发明包封层的聚硅氮烷溶液中,聚硅氮烷的份额为1-80重量%,优选2-50重量%,和特别是5-20重量%,以溶液的总重量计。
适合作为溶剂的特别是有机溶剂,优选非质子溶剂,其不含水以及反应性基团如羟基-或氨基基团,并且对聚硅氮烷是惰性的。实例是芳族或脂族烃及其混合物。它们例如是脂族或芳族烃、卤代烃、酯如乙酸乙酯或乙酸丁酯、酮如丙酮或甲乙酮、醚如四氢呋喃或二丁基醚、以及单-和聚亚烷基二醇二烷基醚(Glymes)或由这些溶剂组成的混合物。
聚硅氮烷溶液的其他组分可以是催化剂,例如有机胺、酸以及金属或金属盐或这些混合物的混合物,其促进层形成过程。特别合适作为胺催化剂的是N,N-二乙基乙醇胺、N,N-二甲基乙醇胺、N,N-二甲基丙醇胺、三乙胺、三乙醇胺和3-吗啉代丙胺。催化剂优选以0.001-10重量%,特别地0.01-6重量%,特别优选地0.1-5重量%的量使用,以聚硅氮烷重量计。
其他组分可以是用于衬底润湿和膜形成的添加剂以及由氧化物如SiO2、TiO2、ZnO、ZrO2或Al2O3构成的无机纳米颗粒。
为了制备本发明阻挡层,将上述组成的聚硅氮烷溶液以常规的涂覆方法,例如通过喷嘴或浸浴施加到基材上,优选施加到钢膜上,并且任选地用弹性刮刀刮平,以确保在基材上均匀的厚度分布或材料覆盖。在柔性基材如由金属或塑料构成的适于辊对辊涂覆的膜上,也可以使用缝隙式喷嘴作为施加系统用于获得非常薄的均匀的层。此后蒸发溶剂。这可在室温下或在使用合适的干燥器时在较高的温度,优选40-60℃下在辊对辊方法中以>1m/min的速度进行。
涂覆聚硅氮烷溶液,随后蒸发溶剂的步骤顺序任选地重复一次、两次或多次,以便获得干燥未硬化(“生的”)的总厚度为100-3000nm的聚硅氮烷层。通过多次进行由涂覆和干燥的步骤顺序,在生的聚硅氮烷层中的溶剂含量明显降低或消除。通过这种方式可以改善硬化的聚硅氮烷膜在困难的基材如钢膜或钛膜上的粘附性。多次涂覆和干燥的另一优点在于,很大程度上覆盖并封闭单层中可能存在的空穴或裂隙,以便显著降低在导电基材如钢膜或钛膜上的电绝缘缺陷的数量。电绝缘缺陷大多由在钢膜或钛膜表面上的机械缺陷如轧制痕迹或粘附的能够穿透薄的(单层)聚硅氮烷层的尖锐的颗粒造成。
在100-180℃范围内的温度下在0.5-1h期间内通过硬化将该干燥的或生的聚硅氮烷层转化成透明的陶瓷相。所述硬化在对流烘箱中进行,所述烘箱可选地用过滤的且用水蒸气润湿的空气或用氮气运行。视温度、持续时间和烘箱气氛(含水蒸汽的空气或氮气)而定,所述陶瓷相具有不同的组成。如果硬化例如在含水蒸汽的空气中进行,则获得组成为SiNvHwOxCy的相,其中x>v;v<1;0<x<1.3;0≤w≤2.5且y<0.5。而在氮气气氛下的硬化则形成组成为SiNvHwOxCy的相,其中v<1.3;x<0.1;0≤w≤2.5且y<0.2。
如此产生的聚硅氮烷层具有低于0.01cm-2,优选低于0.005cm-2,和特别地低于0.002cm-2的电缺陷密度。在此,以如下方法确定电缺陷密度:将1-3μm厚的铝膜气相沉积或溅射到配置有本发明聚硅氮烷层的钢膜(SS420型Hamilton钢)上。然后借助激光切割装置,将10块面积分别为约10×10cm2尺寸的铝膜划分为100块面积分别为1×1cm2的相邻的彼此电绝缘的方形检测区域,并且在钢膜和在铝膜中总计为1000块检测区域的每一块之间的电阻通过欧姆计测定。如果在检测区域测得的电阻低于100KΩ,则将所涉及的检测场标视为具有电缺陷,并评价为1cm-2的缺陷密度。通过对总计为1000块的检测场取均值,计算得出电缺陷密度。
根据已知的方法进行基于黄铜矿的光伏层状结构的制备。在此,首先在由聚硅氮烷构成的本发明阻挡层上通过DC磁控溅射沉积由约1μm厚的钼层构成的后触点,并优选结构化成整体连接(P1节段)(P1-Schnitt)。为此所需的将钼层分成条带用激光切割装置实施。如篇首所讨论的那样,黄铜矿太阳能电池的效率可以通过整体连接而显著提高。
通常,通过如CVD、PVD和快速加热处理(RTP)的方法来沉积黄铜矿吸收体层,其中太阳能电池的温度具有介于450和600℃之间的值。在此,偶尔可能出现聚硅氮烷层与由钼构成的后触点之间或后触点与黄铜矿吸收体层之间的脱层。根据本发明,通过热应力导致的脱层以如下方式得以避免:在黄铜矿吸收体层沉积期间,将太阳能电池的温度保持在360-最高400℃范围内。优选地,吸收体层的制备在3阶段PVD工艺中在3·10-6mbar的压力下进行。PVD工艺总持续时间约为1.5h,其中基材具有低于400℃的最高温度。
此外,可以以如下方式对抗脱层:在沉积钼-后触点之前,将聚硅氮烷层再次硬化。这种“后硬化”特别地在温度约为85℃,相对湿度为85%空气中在1h期间内进行。光谱分析显示,后硬化明显降低了聚硅氮烷层的氮含量。
以湿式化学方式在温度为约60℃下沉积CdS缓冲体层。由i-ZnO和用铝掺杂的ZnO构成的窗层通过DC磁控溅射沉积。
在本发明特别优选的具体实施方式中,使阻挡层配备有钠沉积物。优选地,将醋酸钠混入用于制备阻挡层的聚硅氮烷溶液中。在另一可选的具体实施方式中,在沉积钼-后触点之前,用5-20nm厚的由氟化钠构成的层蒸镀硬化的聚硅氮烷层。通过掺杂钠,相对于常规的黄铜矿参比电池,本发明太阳能电池的效率提高超过60%,如试验结果的以下对照所示的那样:
*醋酸钠
上表中,Voc表示空载电压,Isc表示短路电流,jsc表示短路电流密度,FF表示占空系数以及η表示效率。表中给出的数值表示各自为8个太阳能电池的试验系列的均值,其中所有24个太阳能电池的黄铜矿吸收体层是按照同样的方法制备的。
本说明书、权利要求书以及附图中公开的本发明的特征既可以单独地,也可以以任意组合的方式用于在其多种实施方式中实现本发明。

Claims (20)

1.黄铜矿太阳能电池(10),包括基材(1)、光伏层状结构(4)和处于二者之间的基于聚硅氮烷的介电阻挡层(2)。
2.根据权利要求1的太阳能电池(10),其特征在于,其设置成薄膜太阳能电池,并具有铜-铟-硫化物(CIS)或铜-铟-镓-硒化物(CIGSe)型光伏层状结构(4)。
3.根据权利要求1或2的太阳能电池(10),其特征在于,光伏层状结构(4)包括由钼构成的后触点(41),组成为CuInSe2、CuInS2、CuGaSe2、CuIn1-xGaxSe2其中0<x≤0.5或Cu(InGa)(Se1-ySy)2其中0<y≤1的吸收体(42),由CdS构成的缓冲体(43),由ZnO或ZnO:Al构成的窗层(44)以及由Al或银构成的前触点(45)。
4.根据权利要求1、2或3的太阳能电池(10),其特征在于,基材(1)由包含金属、金属合金、玻璃、陶瓷或塑料的材料构成。
5.根据权利要求1-4一项或多项的太阳能电池(10),其特征在于,基材(1)以膜的形式,特别是以钢膜或钛膜的形式形成。
6.根据权利要求1-5一项或多项的太阳能电池(10),其特征在于,阻挡层(2)由硬化的聚硅氮烷和添加剂在溶剂中的溶液构成,该溶剂优选是二丁基醚。
7.根据权利要求1-6一项或多项的太阳能电池(10),其特征在于,阻挡层(2)含有钠或包括含钠的前驱层(21)。
8.根据权利要求1-7一项或多项的太阳能电池(10),其特征在于,阻挡层(2)具有100-3000nm,优选200-2500nm,以及特别是300-2000nm的厚度。
9.根据权利要求1-8一项或多项的太阳能电池(10),其特征在于,阻挡层(2)具有根据DIN IEC 60093测定的大于1·109MΩ·cm,优选大于1·1010MΩ·cm,和特别地大于1·1011MΩ·cm的比体积电阻。
10.根据权利要求1-9一项或多项的太阳能电池(10),其特征在于,阻挡层(2)在基材(1)上具有根据DIN-EN-ISO 2409用20mm胶带宽度测定的大于5N,优选大于7N,和特别地大于10N的粘附强度。
11.根据权利要求1-10一项或多项的太阳能电池(10),其特征在于,其包括包封层(5),该包封层由硬化的聚硅氮烷和添加剂在溶剂中的溶液构成。
12.根据权利要求1-11一项或多项的太阳能电池(10),其特征在于,阻挡层(2)和任选地包封层(5)由通式(I)的聚硅氮烷制备,
-(SiR′R″-NR″′)n-(I)
其中R′、R″、R″′相同或不同,并且彼此独立地为氢或任选取代的烷基、芳基、乙烯基或(三烷氧基甲硅烷基)烷基残基,其中n为整数并如此确定n,使得所述聚硅氮烷具有150-150000g/mol,优选50000-150000g/mol,和特别为100000-150000g/mol的数均分子量。
13.根据权利要求12的太阳能电池(10),其特征在于,至少一种聚硅氮烷选自其中R′、R″和R″′=H的全氢聚硅氮烷。
14.制备黄铜矿太阳能电池的方法,包括步骤:
a)用含有至少一种通式(I)的聚硅氮烷的溶液涂覆由金属、金属合金、玻璃、陶瓷或塑料构成的基材
-(SiR′R″-NR″′)n-(I)
其中R′、R″、R″′相同或不同,并且彼此独立地为氢或任选取代的烷基、芳基、乙烯基或(三烷氧基甲硅烷基)烷基残基,其中n为整数并如此确定n,使得所述聚硅氮烷具有150-150000g/mol,优选50000-150000g/mol,和特别为100000-150000g/mol的数均分子量,
b)通过蒸发去除溶剂,其中在基材上获得厚度为100-3000nm,优选200-2500nm,和特别为300-2000nm的聚硅氮烷层,
c)任选地一次或多次重复步骤a)和b),
d)通过i)加热到20-1000℃,特别是80-200℃范围内的温度和/或ii)用180-230nm范围内的波长段的紫外线辐照,使所述聚硅氮烷层硬化,其中所述加热和/或辐照在1min-14h,优选1min-60min和特别是1min-30min期间内进行,优选在由含水蒸气的空气或氮气构成的气氛下,
e)任选地,在20-1000℃,优选60-130℃温度下,在相对湿度为60-90%的空气中,在1min-2h,优选30min-1h期间内,对所述聚硅氮烷层进行后硬化,
f)施加基于黄铜矿的光伏层状结构,和
g)按照步骤a)-e)任选地将包封层施加到该光伏层状结构上。
15.根据权利要求14的方法,其特征在于,所述聚硅氮烷溶液含有至少一种其中R′、R″和R″′=H的全氢聚硅氮烷。
16.根据权利要求14或15的方法,其特征在于,所述聚硅氮烷溶液含有催化剂,以及任选地其他添加剂。
17.根据权利要求14、15或16的方法,其特征在于,所述聚硅氮烷溶液含有钠,优选以醋酸钠或四硼酸钠的形式。
18.根据权利要求14-17一项或多项的方法,其特征在于,紧随步骤d)或e)之后,在所述聚硅氮烷层上沉积含钠的前驱层,优选通过氟化钠气相沉积。
19.根据权利要求14-18一项或多项的方法,其特征在于,所述黄铜矿太阳能电池在柔性带状基材上以辊对辊方法制成。
20.含有至少一种通式(I)的聚硅氮烷的聚硅氮烷溶液的用途,
-(SiR′R″-NR″′)n-(I)
其中R′、R″、R″′相同或不同,并且彼此独立地为氢或任选取代的烷基、芳基、乙烯基或(三烷氧基甲硅烷基)烷基残基,其中n为整数并如此确定n,使得所述聚硅氮烷具有150-150000g/mol的数均分子量,用于制备铜-铟-硫化物(CIS)或铜-铟-镓-硒化物(CIGSe)型黄铜矿薄膜太阳能电池的阻挡层。
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