CN102414623A - 光刻设备和方法 - Google Patents

光刻设备和方法 Download PDF

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Publication number
CN102414623A
CN102414623A CN2010800183873A CN201080018387A CN102414623A CN 102414623 A CN102414623 A CN 102414623A CN 2010800183873 A CN2010800183873 A CN 2010800183873A CN 201080018387 A CN201080018387 A CN 201080018387A CN 102414623 A CN102414623 A CN 102414623A
Authority
CN
China
Prior art keywords
catoptron
substrate
projection system
final
time period
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010800183873A
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English (en)
Chinese (zh)
Inventor
B·斯特里克
R·德珠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Holding NV
Original Assignee
ASML Holding NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Holding NV filed Critical ASML Holding NV
Publication of CN102414623A publication Critical patent/CN102414623A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
    • G03F7/70333—Focus drilling, i.e. increase in depth of focus for exposure by modulating focus during exposure [FLEX]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN2010800183873A 2009-04-27 2010-03-18 光刻设备和方法 Pending CN102414623A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17288609P 2009-04-27 2009-04-27
US61/172,886 2009-04-27
PCT/EP2010/053506 WO2010124903A1 (en) 2009-04-27 2010-03-18 Lithographic apparatus and method

Publications (1)

Publication Number Publication Date
CN102414623A true CN102414623A (zh) 2012-04-11

Family

ID=42225080

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800183873A Pending CN102414623A (zh) 2009-04-27 2010-03-18 光刻设备和方法

Country Status (7)

Country Link
US (1) US20120044471A1 (https=)
JP (1) JP2012524988A (https=)
KR (1) KR20120020135A (https=)
CN (1) CN102414623A (https=)
NL (1) NL2004425A (https=)
TW (1) TW201044122A (https=)
WO (1) WO2010124903A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110824857A (zh) * 2018-08-14 2020-02-21 台湾积体电路制造股份有限公司 曝光晶圆的微影系统与方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105974749A (zh) * 2016-07-13 2016-09-28 无锡宏纳科技有限公司 通过浸入式光刻机进行光刻的方法
CN105954979A (zh) * 2016-07-13 2016-09-21 无锡宏纳科技有限公司 通过移动透镜进行光刻的方法
CN105954978A (zh) * 2016-07-13 2016-09-21 无锡宏纳科技有限公司 透镜可移动的浸入式光刻机
CN105929641A (zh) * 2016-07-13 2016-09-07 无锡宏纳科技有限公司 透镜可移动的光刻机

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0490552A (ja) * 1990-08-02 1992-03-24 Canon Inc 露光装置
EP0681222A2 (en) * 1989-01-09 1995-11-08 Konica Corporation Electrophotographic photoreceptor
US6014421A (en) * 1996-05-01 2000-01-11 Canon Kabushiki Kaisha Radiation reduction exposure apparatus and method of manufacturing semiconductor device
CN1466001A (zh) * 2002-06-24 2004-01-07 中国科学院光电技术研究所 自适应全反射极紫外投影光刻物镜
CN1467568A (zh) * 2002-06-18 2004-01-14 ��ʽ����Һ���ȶ˼����������� 曝光方法及装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1985005464A1 (en) * 1984-05-24 1985-12-05 The Commonwealth Of Australia Care Of The Secretar Focal plane scanning device
JPH05343283A (ja) * 1992-06-04 1993-12-24 Hitachi Ltd 半導体露光装置
JP3028028B2 (ja) * 1994-04-22 2000-04-04 キヤノン株式会社 投影露光装置及びそれを用いた半導体デバイスの製造方法
US6147818A (en) * 1998-12-21 2000-11-14 The Regents Of The University Of California Projection optics box
DE10134387A1 (de) * 2001-07-14 2003-01-23 Zeiss Carl Optisches System mit mehreren optischen Elementen
JP4497831B2 (ja) * 2003-04-15 2010-07-07 キヤノン株式会社 露光装置及びデバイスの製造方法
US7760452B2 (en) * 2003-04-25 2010-07-20 Canon Kabushiki Kaisha Driving apparatus, optical system, exposure apparatus and device fabrication method
JP4378109B2 (ja) * 2003-05-30 2009-12-02 キヤノン株式会社 露光装置、投影光学系、デバイスの製造方法
JP2004140390A (ja) * 2003-12-01 2004-05-13 Canon Inc 照明光学系、露光装置及びデバイス製造方法
KR101249598B1 (ko) * 2004-10-26 2013-04-01 가부시키가이샤 니콘 광학 장치, 경통, 노광 장치, 및 디바이스의 제조 방법
US7307262B2 (en) * 2004-12-23 2007-12-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4817702B2 (ja) * 2005-04-14 2011-11-16 キヤノン株式会社 光学装置及びそれを備えた露光装置
JPWO2007086557A1 (ja) * 2006-01-30 2009-06-25 株式会社ニコン 光学部材保持装置、光学部材の位置調整方法、及び露光装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0681222A2 (en) * 1989-01-09 1995-11-08 Konica Corporation Electrophotographic photoreceptor
JPH0490552A (ja) * 1990-08-02 1992-03-24 Canon Inc 露光装置
US6014421A (en) * 1996-05-01 2000-01-11 Canon Kabushiki Kaisha Radiation reduction exposure apparatus and method of manufacturing semiconductor device
CN1467568A (zh) * 2002-06-18 2004-01-14 ��ʽ����Һ���ȶ˼����������� 曝光方法及装置
CN1466001A (zh) * 2002-06-24 2004-01-07 中国科学院光电技术研究所 自适应全反射极紫外投影光刻物镜

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110824857A (zh) * 2018-08-14 2020-02-21 台湾积体电路制造股份有限公司 曝光晶圆的微影系统与方法
US11016390B2 (en) 2018-08-14 2021-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method for exposing wafer

Also Published As

Publication number Publication date
WO2010124903A1 (en) 2010-11-04
NL2004425A (en) 2010-10-28
US20120044471A1 (en) 2012-02-23
KR20120020135A (ko) 2012-03-07
TW201044122A (en) 2010-12-16
JP2012524988A (ja) 2012-10-18

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Application publication date: 20120411