TW201044122A - Lithographic apparatus and method - Google Patents

Lithographic apparatus and method Download PDF

Info

Publication number
TW201044122A
TW201044122A TW099110622A TW99110622A TW201044122A TW 201044122 A TW201044122 A TW 201044122A TW 099110622 A TW099110622 A TW 099110622A TW 99110622 A TW99110622 A TW 99110622A TW 201044122 A TW201044122 A TW 201044122A
Authority
TW
Taiwan
Prior art keywords
mirror
substrate
projection system
movement
final
Prior art date
Application number
TW099110622A
Other languages
English (en)
Chinese (zh)
Inventor
Bob Streefkerk
Jongh Robertus Johannes Marinus De
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of TW201044122A publication Critical patent/TW201044122A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
    • G03F7/70333—Focus drilling, i.e. increase in depth of focus for exposure by modulating focus during exposure [FLEX]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW099110622A 2009-04-27 2010-04-06 Lithographic apparatus and method TW201044122A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17288609P 2009-04-27 2009-04-27

Publications (1)

Publication Number Publication Date
TW201044122A true TW201044122A (en) 2010-12-16

Family

ID=42225080

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099110622A TW201044122A (en) 2009-04-27 2010-04-06 Lithographic apparatus and method

Country Status (7)

Country Link
US (1) US20120044471A1 (https=)
JP (1) JP2012524988A (https=)
KR (1) KR20120020135A (https=)
CN (1) CN102414623A (https=)
NL (1) NL2004425A (https=)
TW (1) TW201044122A (https=)
WO (1) WO2010124903A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105974749A (zh) * 2016-07-13 2016-09-28 无锡宏纳科技有限公司 通过浸入式光刻机进行光刻的方法
CN105954979A (zh) * 2016-07-13 2016-09-21 无锡宏纳科技有限公司 通过移动透镜进行光刻的方法
CN105954978A (zh) * 2016-07-13 2016-09-21 无锡宏纳科技有限公司 透镜可移动的浸入式光刻机
CN105929641A (zh) * 2016-07-13 2016-09-07 无锡宏纳科技有限公司 透镜可移动的光刻机
US10775700B2 (en) 2018-08-14 2020-09-15 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography system and method for exposing wafer

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1985005464A1 (en) * 1984-05-24 1985-12-05 The Commonwealth Of Australia Care Of The Secretar Focal plane scanning device
JP2714838B2 (ja) * 1989-01-09 1998-02-16 コニカ株式会社 電子写真感光体
JPH0490552A (ja) * 1990-08-02 1992-03-24 Canon Inc 露光装置
JPH05343283A (ja) * 1992-06-04 1993-12-24 Hitachi Ltd 半導体露光装置
JP3028028B2 (ja) * 1994-04-22 2000-04-04 キヤノン株式会社 投影露光装置及びそれを用いた半導体デバイスの製造方法
JP3231241B2 (ja) * 1996-05-01 2001-11-19 キヤノン株式会社 Ｘ線縮小露光装置、及び該装置を用いた半導体製造方法
US6147818A (en) * 1998-12-21 2000-11-14 The Regents Of The University Of California Projection optics box
DE10134387A1 (de) * 2001-07-14 2003-01-23 Zeiss Carl Optisches System mit mehreren optischen Elementen
JP4146673B2 (ja) * 2002-06-18 2008-09-10 株式会社 液晶先端技術開発センター 露光方法及び装置
CN1466001A (zh) * 2002-06-24 2004-01-07 中国科学院光电技术研究所 自适应全反射极紫外投影光刻物镜
JP4497831B2 (ja) * 2003-04-15 2010-07-07 キヤノン株式会社 露光装置及びデバイスの製造方法
US7760452B2 (en) * 2003-04-25 2010-07-20 Canon Kabushiki Kaisha Driving apparatus, optical system, exposure apparatus and device fabrication method
JP4378109B2 (ja) * 2003-05-30 2009-12-02 キヤノン株式会社 露光装置、投影光学系、デバイスの製造方法
JP2004140390A (ja) * 2003-12-01 2004-05-13 Canon Inc 照明光学系、露光装置及びデバイス製造方法
KR101249598B1 (ko) * 2004-10-26 2013-04-01 가부시키가이샤 니콘 광학 장치, 경통, 노광 장치, 및 디바이스의 제조 방법
US7307262B2 (en) * 2004-12-23 2007-12-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4817702B2 (ja) * 2005-04-14 2011-11-16 キヤノン株式会社 光学装置及びそれを備えた露光装置
JPWO2007086557A1 (ja) * 2006-01-30 2009-06-25 株式会社ニコン 光学部材保持装置、光学部材の位置調整方法、及び露光装置

Also Published As

Publication number Publication date
WO2010124903A1 (en) 2010-11-04
NL2004425A (en) 2010-10-28
US20120044471A1 (en) 2012-02-23
KR20120020135A (ko) 2012-03-07
CN102414623A (zh) 2012-04-11
JP2012524988A (ja) 2012-10-18

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