JP2012524988A - リソグラフィ装置および方法 - Google Patents

リソグラフィ装置および方法 Download PDF

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Publication number
JP2012524988A
JP2012524988A JP2012506419A JP2012506419A JP2012524988A JP 2012524988 A JP2012524988 A JP 2012524988A JP 2012506419 A JP2012506419 A JP 2012506419A JP 2012506419 A JP2012506419 A JP 2012506419A JP 2012524988 A JP2012524988 A JP 2012524988A
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JP
Japan
Prior art keywords
mirror
substrate
projection system
time interval
final mirror
Prior art date
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Pending
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JP2012506419A
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English (en)
Japanese (ja)
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JP2012524988A5 (https=
Inventor
ストリーフケルク，ボブ
ヨン，ロベルタス デ
Original Assignee
エーエスエムエル ネザーランズ ビー．ブイ．
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Application filed by エーエスエムエル ネザーランズ ビー．ブイ． filed Critical エーエスエムエル ネザーランズ ビー．ブイ．
Publication of JP2012524988A publication Critical patent/JP2012524988A/ja
Publication of JP2012524988A5 publication Critical patent/JP2012524988A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
    • G03F7/70333—Focus drilling, i.e. increase in depth of focus for exposure by modulating focus during exposure [FLEX]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2012506419A 2009-04-27 2010-03-18 リソグラフィ装置および方法 Pending JP2012524988A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17288609P 2009-04-27 2009-04-27
US61/172,886 2009-04-27
PCT/EP2010/053506 WO2010124903A1 (en) 2009-04-27 2010-03-18 Lithographic apparatus and method

Publications (2)

Publication Number Publication Date
JP2012524988A true JP2012524988A (ja) 2012-10-18
JP2012524988A5 JP2012524988A5 (https=) 2013-05-02

Family

ID=42225080

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012506419A Pending JP2012524988A (ja) 2009-04-27 2010-03-18 リソグラフィ装置および方法

Country Status (7)

Country Link
US (1) US20120044471A1 (https=)
JP (1) JP2012524988A (https=)
KR (1) KR20120020135A (https=)
CN (1) CN102414623A (https=)
NL (1) NL2004425A (https=)
TW (1) TW201044122A (https=)
WO (1) WO2010124903A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105974749A (zh) * 2016-07-13 2016-09-28 无锡宏纳科技有限公司 通过浸入式光刻机进行光刻的方法
CN105954979A (zh) * 2016-07-13 2016-09-21 无锡宏纳科技有限公司 通过移动透镜进行光刻的方法
CN105954978A (zh) * 2016-07-13 2016-09-21 无锡宏纳科技有限公司 透镜可移动的浸入式光刻机
CN105929641A (zh) * 2016-07-13 2016-09-07 无锡宏纳科技有限公司 透镜可移动的光刻机
US10775700B2 (en) 2018-08-14 2020-09-15 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography system and method for exposing wafer

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05343283A (ja) * 1992-06-04 1993-12-24 Hitachi Ltd 半導体露光装置
JP2004140390A (ja) * 2003-12-01 2004-05-13 Canon Inc 照明光学系、露光装置及びデバイス製造方法
JP2006179930A (ja) * 2004-12-23 2006-07-06 Asml Netherlands Bv リソグラフィ装置及びデバイス製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1985005464A1 (en) * 1984-05-24 1985-12-05 The Commonwealth Of Australia Care Of The Secretar Focal plane scanning device
JP2714838B2 (ja) * 1989-01-09 1998-02-16 コニカ株式会社 電子写真感光体
JPH0490552A (ja) * 1990-08-02 1992-03-24 Canon Inc 露光装置
JP3028028B2 (ja) * 1994-04-22 2000-04-04 キヤノン株式会社 投影露光装置及びそれを用いた半導体デバイスの製造方法
JP3231241B2 (ja) * 1996-05-01 2001-11-19 キヤノン株式会社 Ｘ線縮小露光装置、及び該装置を用いた半導体製造方法
US6147818A (en) * 1998-12-21 2000-11-14 The Regents Of The University Of California Projection optics box
DE10134387A1 (de) * 2001-07-14 2003-01-23 Zeiss Carl Optisches System mit mehreren optischen Elementen
JP4146673B2 (ja) * 2002-06-18 2008-09-10 株式会社 液晶先端技術開発センター 露光方法及び装置
CN1466001A (zh) * 2002-06-24 2004-01-07 中国科学院光电技术研究所 自适应全反射极紫外投影光刻物镜
JP4497831B2 (ja) * 2003-04-15 2010-07-07 キヤノン株式会社 露光装置及びデバイスの製造方法
US7760452B2 (en) * 2003-04-25 2010-07-20 Canon Kabushiki Kaisha Driving apparatus, optical system, exposure apparatus and device fabrication method
JP4378109B2 (ja) * 2003-05-30 2009-12-02 キヤノン株式会社 露光装置、投影光学系、デバイスの製造方法
KR101249598B1 (ko) * 2004-10-26 2013-04-01 가부시키가이샤 니콘 광학 장치, 경통, 노광 장치, 및 디바이스의 제조 방법
JP4817702B2 (ja) * 2005-04-14 2011-11-16 キヤノン株式会社 光学装置及びそれを備えた露光装置
JPWO2007086557A1 (ja) * 2006-01-30 2009-06-25 株式会社ニコン 光学部材保持装置、光学部材の位置調整方法、及び露光装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05343283A (ja) * 1992-06-04 1993-12-24 Hitachi Ltd 半導体露光装置
JP2004140390A (ja) * 2003-12-01 2004-05-13 Canon Inc 照明光学系、露光装置及びデバイス製造方法
JP2006179930A (ja) * 2004-12-23 2006-07-06 Asml Netherlands Bv リソグラフィ装置及びデバイス製造方法

Also Published As

Publication number Publication date
WO2010124903A1 (en) 2010-11-04
NL2004425A (en) 2010-10-28
US20120044471A1 (en) 2012-02-23
KR20120020135A (ko) 2012-03-07
CN102414623A (zh) 2012-04-11
TW201044122A (en) 2010-12-16

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