CN102403309B - 发光器件 - Google Patents

发光器件 Download PDF

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Publication number
CN102403309B
CN102403309B CN201110276376.1A CN201110276376A CN102403309B CN 102403309 B CN102403309 B CN 102403309B CN 201110276376 A CN201110276376 A CN 201110276376A CN 102403309 B CN102403309 B CN 102403309B
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CN
China
Prior art keywords
substrate
luminescent device
type surface
light
driver
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201110276376.1A
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English (en)
Chinese (zh)
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CN102403309A (zh
Inventor
宋镐荣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN102403309A publication Critical patent/CN102403309A/zh
Application granted granted Critical
Publication of CN102403309B publication Critical patent/CN102403309B/zh
Active legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
CN201110276376.1A 2010-09-10 2011-09-13 发光器件 Active CN102403309B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100089048A KR101711961B1 (ko) 2010-09-10 2010-09-10 발광 디바이스
KR10-2010-0089048 2010-09-10

Publications (2)

Publication Number Publication Date
CN102403309A CN102403309A (zh) 2012-04-04
CN102403309B true CN102403309B (zh) 2015-09-16

Family

ID=44582605

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110276376.1A Active CN102403309B (zh) 2010-09-10 2011-09-13 发光器件

Country Status (5)

Country Link
US (1) US9006973B2 (fr)
EP (1) EP2428991B1 (fr)
JP (1) JP5945392B2 (fr)
KR (1) KR101711961B1 (fr)
CN (1) CN102403309B (fr)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102751296B (zh) * 2012-07-24 2015-05-20 矽光光电科技（上海）有限公司 整合集成电路、发光元件及传感元件的单衬底器件
WO2014154023A1 (fr) * 2013-03-25 2014-10-02 The Hong Kong University Of Science And Technology Architecture de système sur puce électrique
KR20160032236A (ko) * 2013-07-19 2016-03-23 코닌클리케 필립스 엔.브이. 광학 요소를 가지며 기판 캐리어를 갖지 않는 ｐｃ ｌｅｄ
TWM496091U (zh) * 2014-03-26 2015-02-21 Leadray Energy Co Ltd 具矽基座的發光二極體及發光二極體燈具
DE102014105734A1 (de) * 2014-04-23 2015-10-29 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
JP6736260B2 (ja) * 2015-05-13 2020-08-05 ローム株式会社 半導体発光装置
US20170104135A1 (en) * 2015-10-13 2017-04-13 Sensor Electronic Technology, Inc. Light Emitting Diode Mounting Structure
WO2019202874A1 (fr) 2018-04-19 2019-10-24 ソニーセミコンダクタソリューションズ株式会社 Dispositif de pilotage de laser à semi-conducteur et son procédé de fabrication
US20220037300A1 (en) * 2018-12-11 2022-02-03 Sony Semiconductor Solutions Corporation Semiconductor device and electronic equipment
CN113594194B (zh) 2020-04-30 2024-09-17 华为机器有限公司 一种堆叠结构、显示屏及显示装置
KR102557580B1 (ko) * 2021-01-05 2023-07-20 엘지전자 주식회사 반도체 발광 소자 패키지 및 디스플레이 장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1828921A (zh) * 2005-01-21 2006-09-06 范朝阳 异质集成高压直流/交流发光器
CN101032034A (zh) * 2004-06-30 2007-09-05 克里公司 用于封装发光器件的芯片级方法和芯片级封装的发光器件
CN101142692A (zh) * 2005-03-11 2008-03-12 首尔半导体株式会社 具有串联耦合的发光单元阵列的发光二极管封装
CN101154656A (zh) * 2006-09-30 2008-04-02 香港微晶先进封装技术有限公司 多芯片发光二极管模组结构及其制造方法

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JPS63111682A (ja) * 1986-10-29 1988-05-16 Mitsubishi Electric Corp 光半導体素子用サブマウント
US6333522B1 (en) 1997-01-31 2001-12-25 Matsushita Electric Industrial Co., Ltd. Light-emitting element, semiconductor light-emitting device, and manufacturing methods therefor
US6777883B2 (en) 2002-04-10 2004-08-17 Koninklijke Philips Electronics N.V. Integrated LED drive electronics on silicon-on-insulator integrated circuits
US20040206970A1 (en) 2003-04-16 2004-10-21 Martin Paul S. Alternating current light emitting device
JP2005142294A (ja) 2003-11-05 2005-06-02 Matsushita Electric Ind Co Ltd 半導体レーザユニットおよびそれを用いた光ピックアップ装置
US20070257901A1 (en) * 2004-04-19 2007-11-08 Matsushita Electric Industrial Co., Ltd. Semiconductor chip for driving light emitting element, light emitting device, and lighting device
KR100927256B1 (ko) 2004-07-09 2009-11-16 엘지전자 주식회사 제너다이오드가 집적된 발광소자 서브마운트 제작방법
JP4601464B2 (ja) * 2005-03-10 2010-12-22 株式会社沖データ 半導体装置、プリントヘッド、及びそれを用いた画像形成装置
EP2280430B1 (fr) 2005-03-11 2020-01-01 Seoul Semiconductor Co., Ltd. Boîtier de diodes électroluminescentes à matrice de cellules photoemettrices montées en serie
US7495944B2 (en) 2005-03-30 2009-02-24 Ovonyx, Inc. Reading phase change memories
JP4969055B2 (ja) * 2005-04-28 2012-07-04 ローム株式会社 光通信モジュール
US7994514B2 (en) 2006-04-21 2011-08-09 Koninklijke Philips Electronics N.V. Semiconductor light emitting device with integrated electronic components
US7655957B2 (en) 2006-04-27 2010-02-02 Cree, Inc. Submounts for semiconductor light emitting device packages and semiconductor light emitting device packages including the same
KR101134752B1 (ko) 2006-07-14 2012-04-13 엘지이노텍 주식회사 Ｌｅｄ 패키지
US7855425B2 (en) * 2007-03-09 2010-12-21 Sanyo Electric Co., Ltd. Semiconductor device and method of manufacturing the same
JP2008235792A (ja) * 2007-03-23 2008-10-02 Matsushita Electric Ind Co Ltd 半導体装置とその製造方法
US8436371B2 (en) * 2007-05-24 2013-05-07 Cree, Inc. Microscale optoelectronic device packages
KR100878326B1 (ko) 2007-07-03 2009-01-14 한국광기술원 칩스케일 패키징 발광소자 및 그의 제조방법
JP2009117536A (ja) * 2007-11-05 2009-05-28 Towa Corp 樹脂封止発光体及びその製造方法
JP5102605B2 (ja) 2007-12-25 2012-12-19 パナソニック株式会社 発光装置およびその製造方法
JP5475954B2 (ja) * 2008-01-28 2014-04-16 パナソニック株式会社 発光装置
US8084780B2 (en) * 2009-08-13 2011-12-27 Semileds Optoelectronics Co. Smart integrated semiconductor light emitting system including light emitting diodes and application specific integrated circuits (ASIC)

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101032034A (zh) * 2004-06-30 2007-09-05 克里公司 用于封装发光器件的芯片级方法和芯片级封装的发光器件
CN1828921A (zh) * 2005-01-21 2006-09-06 范朝阳 异质集成高压直流/交流发光器
CN101142692A (zh) * 2005-03-11 2008-03-12 首尔半导体株式会社 具有串联耦合的发光单元阵列的发光二极管封装
CN101154656A (zh) * 2006-09-30 2008-04-02 香港微晶先进封装技术有限公司 多芯片发光二极管模组结构及其制造方法

Also Published As

Publication number Publication date
JP5945392B2 (ja) 2016-07-05
US20120062115A1 (en) 2012-03-15
EP2428991A3 (fr) 2014-06-11
CN102403309A (zh) 2012-04-04
KR101711961B1 (ko) 2017-03-03
US9006973B2 (en) 2015-04-14
EP2428991B1 (fr) 2019-02-20
JP2012060133A (ja) 2012-03-22
EP2428991A2 (fr) 2012-03-14
KR20120026873A (ko) 2012-03-20

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: SAMSUNG ELECTRONICS CO., LTD.

Free format text: FORMER OWNER: SAMSUNG LED CO., LTD.

Effective date: 20121128

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20121128

Address after: Gyeonggi Do Korea Suwon

Applicant after: Samsung Electronics Co., Ltd.

Address before: Gyeonggi Do Korea Suwon

Applicant before: Samsung LED Co., Ltd.

C14 Grant of patent or utility model
GR01 Patent grant