CN105322084A - 发光器件模块 - Google Patents
发光器件模块 Download PDFInfo
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- CN105322084A CN105322084A CN201510295516.8A CN201510295516A CN105322084A CN 105322084 A CN105322084 A CN 105322084A CN 201510295516 A CN201510295516 A CN 201510295516A CN 105322084 A CN105322084 A CN 105322084A
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Abstract
本发明涉及一种发光器件模块。实施例提供了一种发光器件模块,包括:电路板;发光器件,其经由导电粘合剂结合至电路板上的导电层;荧光体层,其被布置在发光器件的侧表面和上表面上;和透镜,其在电路板和荧光体层上。在发光器件和电路板之间产生空隙。
Description
相关申请的交叉引用
本申请要求于2014年6月2日在韩国提交的韩国专利申请No.10-2014-0066694的优先权,其公开内容通过引用在此整体并入。
技术领域
实施例涉及一种发光器件模块。
背景技术
由于许多优点,诸如易控的宽带隙能,所以III-V族化合物半导体,诸如GaN和AlGaN广泛地用于光电子学和电子学。
特别地,由于装置材料和薄膜生长技术的发展,使用III-V或II-VI族化合物半导体的发光器件,诸如发光二极管或激光二极管能够发出诸如红色、绿色和蓝色的各种颜色的可见和紫外光。这些发光器件也能够通过使用荧光体或颜色组合而发出具有高发光效率的白光,并且与传统的光源,诸如荧光灯和白炽灯相比,具有低能量消耗、半永久寿命、快速响应速度、安全和环境友好的几个优点。
因而,发光器件的应用部分扩展至光学通信装置的传输模块、代替起液晶显示器(LCD)设备的背光作用的冷阴极荧光灯(CCFL)的发光二极管背光、代替荧光灯或白炽灯的白光发光二极管照明设备、车头灯和交通灯。
在发光器件中,将包括第一导电半导体层、有源层和第二导电半导体层的发光结构布置在例如由蓝宝石形成的衬底上,并且分别将第一电极和第二电极布置在第一导电半导体层和第二导电半导体层上。发光器件发出具有由组成有源层的材料的本征带能确定的能量的光,在有源层中,通过第一导电半导体层引入的电子和通过第二导电半导体层引入的空穴彼此相遇。从有源层发出的光可基于组成有源层的材料组分而变化,并且例如可能为蓝光、紫外(UV)或远UV光。
例如,可能以封装形式将上述发光器件安装至背光单元或照明设备。
图1是图示传统的发光器件模块的视图。
在发光器件模块100中,将发光器件10布置在封装主体110的腔体底部上,并且绕发光主体10填充包括荧光体162的成型部分。成型部分160可起透镜作用。
可将第一引线框架121和第二引线框架122设置在封装主体110中。发光器件10可分别经由布线140和145而电连接至第一引线框架121和第二引线框架122。
反射层R可在封装主体110的表面上形成,并且用于向上反射从发光器件10发出的光。
封装主体110可连接至电路板180,诸如印刷电路板(PCB),以接收驱动发光器件10所需的电流。
然而,上述传统的发光器件模块具有下列问题。
需要布线和引线框架向发光器件供电,并且这些材料可能导致成本增加。此外,布线可阻碍从发光器件发出的光的传播,降低光提取效率。
另外,上述反射层R可能由高反射性材料形成,因而会褪色(discolor)。例如,组成封装主体的聚酰胺(PPA)可能易于由于受热而褪色。
发明内容
实施例提供一种发光器件模块,其能够实现降低的制造成本和提高的光提取效率,并且防止例如封装主体的褪色。
在一个实施例中,发光器件模块包括:电路板;发光器件,其经由导电粘合剂结合至电路板上的导电层;荧光体层,其被布置在发光器件的侧表面和上表面上;和透镜,其在电路板和荧光体层上,其中在发光器件和电路板之间产生空隙。
发光器件可包括在衬底上的发光结构,并且可在发光结构和电路板之间产生空隙。
荧光体层可被布置成从发光器件的侧表面延伸至电路板的表面,并且可在由荧光体层和电路板围绕的区域中产生空隙。
空隙可充满有空气。
发光器件可为倒装芯片式发光器件。
布置在发光器件的侧表面上的荧光体层的可被设置为比发光结构的高度高。
发光器件可具有彼此面对的第一侧表面和第二侧表面,并且第一侧表面处的荧光体层和电路板之间的距离可等于第二侧表面处的荧光体层和电路板之间的距离。
荧光体层和透镜可包括硅。
透镜可接触荧光体层和电路板。
透镜可具有凹部,并且发光器件可被插入凹部中。
凹部可具有等于荧光体层的高度的深度。
发光器件的侧表面处的荧光体层的高度可等于发光器件的高度。
发光器件的侧表面处的荧光体层的厚度可等于发光器件的上表面处的荧光体层的厚度。
发光器件可具有彼此面对的第一侧表面和第二侧表面,并且第一侧表面处的荧光体层的厚度可等于第二侧表面处的荧光体层的厚度。
发光器件外部的透镜在其外围处的厚度可大于发光器件的高度,并且小于发光器件的高度和荧光体层的高度的总和。
透镜在其中心处的厚度可在发光器件的高度和荧光体层的高度的总和的两倍至三倍的范围内。
在另一实施例中,发光器件模块包括:电路板;发光器件,其被配置成电接触电路板上的导电层;荧光体层,其被布置在发光器件的侧表面和上表面上;和透镜,其被布置在电路板和荧光体层上,其中荧光体层在发光器件的侧表面处与电路板间隔开。
发光器件可包括发光结构,并且发光结构的表面的高度和荧光体层的高度可在发光器件的侧表面处彼此相等。
发光器件可具有彼此面对的第一侧表面和第二侧表面,并且第一侧表面处的荧光体层和电路板之间的距离可等于第二侧表面处的荧光体层和电路板之间的距离。
在另一实施例中,发光器件模块包括:电路板;发光器件,其经由导电粘合剂结合至电路板上的导电层;荧光体层,其被布置在发光器件的侧表面和上表面上;和透镜,其被布置在电路板和荧光体层上,其中发光器件外部的透镜在其外围处的厚度大于发光器件的高度,并且小于发光器件的高度和荧光体层的高度的总和,并且其中透镜在其中心处的厚度可在发光器件的高度和荧光体层的高度的总和的两倍至三倍的范围内。
附图说明
将参考附图详细地描述布置和实施例,其中相同附图标记涉及相同元件,并且其中:
图1是图示传统的发光器件模块的视图;
图2是图示发光器件模块的第一实施例的视图;
图3A至3C是图示制造图2的发光器件模块的工艺的视图;
图4是图示发光器件模块的第二实施例的视图;
图5是图示发光器件模块的第三实施例的视图;
图6A至6D是根据实施例和比较实施例的发光器件模块的比较图;
图7A至7D是根据实施例和比较实施例的发光器件模块的其它比较图;
图8A至8C是图示上述发光器件模块阵列的视图。
具体实施方式
下面将参考附图详细地描述具体地实现上述目标的示例性实施例。
在下文实施例的说明中,应理解,当涉及在其它元件“上”或“下”形成的每个元件时,其可能直接地处于该其它元件“上”或“下”,或者间接地形成,两者之间存在一个或多个插入元件。另外也应理解,在元件“上”或“下”可意味着元件的向上方向和向下方向。
图2是图示发光器件模块的第一实施例的视图。
由附图标记200a指示的根据本实施例的发光器件模块包括:电路板280;发光器件20,其电连接至电路板280上的第一和第二导电层281和282;荧光体层260,其围绕发光器件20;和透镜270,其被布置在荧光体层260和电路板280上。
例如,电路板280可为印刷电路板(PCB)、金属PCB或FR-4板。电路板280上的第一导电层281和第二导电层282可分别电连接至发光器件20的第一电极26a和第二电极26c。
发光器件20可为所示倒装芯片式发光器件。缓冲层22和发光结构24顺序地布置在衬底21上。发光结构24包括第一导电半导体层24a、有源层24b和第二导电层24c。第一电极26a和第二电极26c分别布置在第一导电半导体层24a和第二导电半导体层24c上。
衬底21由适合用于半导体材料生长的材料或载体晶圆形成。衬底21可由高度导热的材料形成,并且包括传导衬底或绝缘衬底。例如,衬底21可采用从蓝宝石(Al2O3)、SiO2、SiC、Si、GaAs、GaN、ZnO、GaP、InP、Ge和Ga2O3中选择的至少一种。
例如,当衬底21由蓝宝石形成,并且包括GaN或AlGaN的发光结构24布置在衬底21上时,例如由于GaN或AlGaN与蓝宝石之间的显著晶格失配以及其热膨胀系数之间的显著差异,可能发生影响结晶化的位错、回熔、破裂、麻点和表面形貌缺陷。因此,例如缓冲层22可由AlN形成。
第一导电半导体层24a可由化合物半导体,诸如III-V族或II-VI族化合物半导体形成,并且可掺杂有第一导电掺杂物。第一导电半导体层24a可由下列半导体材料形成,其具有组分AlxInyGa(1-x-y)N(0≤x≤1,0≤y≤1,0≤x+y≤1)。例如,第一导电半导体层24a可由在AlGaN、GaN、InAlGaN、AlGaAs、GaP、GaAs、GaAsP和AlGaInP中选择的任何一种或多种材料形成。
当第一导电半导体层24a为n型半导体层时,第一导电掺杂物可包括n型掺杂物,诸如Si、Ge、Sn、Se和Te。第一导电半导体层24a可具有单层或多层形式,但不限于此。
有源层24b布置在第一导电半导体层24a的上表面上,并且可包括单阱结构、多阱结构、单量子阱结构、多量子阱结构、量子点结构和量子线结构中的任何一个。
有源层24b由III-V族化合物半导体形成,并且包括具有一对任何下列一种或多种结构的阱层和势垒层,即AlGaN/AlGaN、InGaN/GaN、InGaN/InGaN、AlGaN/GaN、InAlGaN/GaN、GaAs(InGaAs)/AlGaAs和GaP(InGaP)/AlGaP,而不限于此。阱层由具有比势垒层的能带隙小的能带隙的材料形成。
第二导电半导体层24c可由有源层24b的表面上的化合物半导体形成。第二导电半导体层24c可由下列化合物半导体形成,诸如III-V或II-VI族化合物半导体,并且可掺杂有第二导电掺杂物。第二导电半导体层24c可由下列半导体材料形成,其具有组分InxAlyGa1-x-yN(0≤x≤1,0≤y≤1,0≤x+y≤1)。例如,第二导电半导体层24c可由在AlGaN、GaNA1InN、AlGaAs、GaP、GaAs、GaAsP和AlGaInP中选择的任何一种或多种材料形成。
第二导电半导体层24c可掺杂有第二导电掺杂物。当第二导电半导体层24c为p型半导体层时,第二导电掺杂物可以是p型掺杂物,诸如Mg、Zn、Ca、Sr和Ba。第二导电半导体层24c可具有单层或多层形式,而不限于此。
虽然未示出,但是可在第二导电半导体层24c上形成例如由铟锡氧化物(ITO)形成的透光导电层,其可提高从第二电极26c至第二导电半导体层24c的电流扩展效果。
可经由台面蚀刻移除第二导电半导体层24c、有源层24b和第一导电半导体层24a的部分,以暴露第一导电半导体层24a,用于获得将形成第一电极26a的区域。
第一电极26a和第二电极26c分别布置在第一导电半导体层24a和第二导电半导体层24c上。第一电极26a和第二电极26c可由在铝(Al)、钛(Ti)、铬(Cr)、镍(Ni)、铜(Cu)和金(Au)中选择的至少一种形成,并且具有单层或多层形式。
虽然未示出,但是可绕发光结构24形成钝化层。钝化层可由绝缘材料形成。特别地,钝化层可由氧化物或氮化物形成。更特别地,钝化层可由硅氧化物(SiO2)层、氮氧化物层或铝氧化物层形成。
发光器件20的第一电极26a和第二电极26c可分别经由导电粘合剂电连接至电路板280的第一导电层281和第二导电层282。在本实施例中,为了结合可使用焊料28a和28c。
在发光器件20的周围布置荧光体层260。荧光体层260布置在发光器件20的上表面和侧表面上。
在本实施例中,荧光体层260从发光器件20的侧表面延伸至电路板280的表面,以便与电路板280的表面接触。
荧光体层260可包括荧光体以及基本材料,基本材料包括硅基聚合物材料,诸如树脂或橡胶。随着从发光器件20发出的第一波长的光激励荧光体,可从荧光体发出第二波长的光。
可在荧光体层260内部的区域中的发光器件20和电路板280之间产生空隙。空隙可充满有空气。
在本实施例中,荧光体层260围绕发光器件20,同时接触电路板280。因此,可在发光器件20的侧表面和下面的电路板280上由荧光体层260围绕的区域中产生空隙。此时,空隙可接触发光器件20的发光结构24。
在图2中,荧光体层260接触发光器件20,更具体地,在“b1”指示的区域处接触衬底21的上表面。透镜270在“b21”指示的区域处接触荧光体层260,并且也在“b22”指示的区域处接触电路板280。
透镜270可包括与上述荧光体层260相同的材料。特别地,透镜270可包括硅基聚合物材料,诸如树脂或橡胶。如示例性所示的,透镜270可在其相应于发光器件20的中心区域处具有凸部。
图3A至3C是图示制造图2的发光器件模块的工艺的视图。
如图3A中示例性所示的,荧光体层260布置在倒装芯片式发光器件20周围。荧光体层260可被布置成共形涂覆或薄膜形式。如图所示,荧光体层260的上表面u2和u1可分别被定位为高于第一和第二导电半导体层24a和24c或者第一和第二电极26a和26c。
然后,如图3B中示例性所示的,在发光器件20周围布置的荧光体层260插入在透镜270中形成的凹部中。此时,在透镜270中形成的凹部的深度t等于荧光体层260的高度h。此时,透镜270和荧光体层260可使用用作上述基本材料的硅基聚合物材料彼此附接,而不需要粘合剂。
因而,如图3C中示例性所示的,插入透镜270的凹部中的发光器件20耦合至电路板280。
此时,起导电粘合剂作用的焊料28a和28c设置在电路板280上的第一导电层281和第二导电层282上。发光器件20的第一电极26a和第二电极26c分别经由焊料28a和28c固定至第一导电层281和第二导电层282。
图4是图示发光器件模块的第二实施例的视图。
虽然本实施例的发光器件模块200b与上述第一实施例的基本相同,但是存在下列差异,即荧光体层260不接触电路板280。
也就是说,荧光体层260的上表面u1和u2的每一个都具有与其相邻的第一导电半导体层24a或第二导电半导体层24c相同的高度,以便空隙可侧向接触透镜270。
图5是图示发光器件模块的第三实施例的视图。
根据本实施例的发光器件模块200b与上述第一实施例和第二实施例的基本相同,除了在荧光体层260的上表面u1和u2的高度高于第一导电半导体层24a或第二导电半导体层24c的高度时,荧光体层260可不接触电路板280,并且空隙可侧向接触荧光体层260和透镜270。
在图5中,荧光体层260的上表面u1和u2与电路板280之间的距离d1和d2可在发光器件20的两侧处彼此相等。另外,发光器件20的两侧处的荧光体层260的厚度t1和t2可等于发光器件20的上表面处的荧光体层260的厚度t3。
在根据实施例的发光器件模块中,省略了布线和引线框架,并且倒装芯片式发光器件直接耦合至电路板,这导致降低的材料成本,并且由于减少了布线导致的光吸收或屏蔽而提高的发光效率。另外,省略封装主体和封装主体上的反射层可防止由于封装主体和反射层褪色导致的色温失真。
图6A至6D是根据实施例和比较实施例的发光器件模块的比较图。在图6A至6D中,将发光器件简要地图示为六边形形状,并且省略了发光器件之下的电路板。
在图6A的比较实施例中,荧光体层被布置在发光器件的侧表面和上表面上。发光器件的任一侧都可具有1000μm的宽度w1和250μm的高度h1。另外,发光器件的一个侧表面处的荧光体层的厚度w2可为100μm,并且发光器件的上表面处的荧光体层的厚度h2可为100μm。
在图6B的实施例中,发光器件和荧光体层具有与图6A的比较实施例的那些相同的厚度,并且存在的差异在于,透镜布置在荧光体层的侧表面和上表面上。透镜可在其外围处具有200μm的厚度h3,并且可在其中心处具有850μm的厚度h4。这里,透镜具有中心凸部,并且透镜中心处的厚度h4可为凸部的厚度。
图6C的实施例与图6B的相同,除了透镜在其外围处具有300μm的厚度h3。
图6D的实施例与图6B的相同,除了透镜在其中心处具有1460μm的厚度h4。
假定根据图6A的比较实施例的发光器件模块的光输出为100,图6B至6D中所示的发光器件模块的光输出分别为106.7、107.2和104.0。另外,根据图6A的比较实例的发光器件模块的视角为137.3°,并且图6B至6D中所示的发光器件模块的视角分别为150.29°、143.88°和139.64°。
在图6A-6D中,当透镜在其外围处的厚度h3大于发光器件的高度h1,并且小于发光器件和荧光体层的总高度h1+h2时,发光器件模块的光输出提高。另外,与其中透镜在其中心处的厚度h4为发光器件和荧光体层的总高度h1+h2的四倍或更大的图6D的发光器件模块相比,其中透镜在其中心处的厚度h4处于发光器件和荧光体层的总高度h1+h2的两倍至三倍的范围内的图6B和6C的发光器件模块具有更高的光输出和更宽的视角。
图7A至7D是根据实施例和比较实施例的发光器件模块的其它比较图。
与图6B至6D的发光器件模块不同地,在图7A至7D的发光器件模块中,透镜可具有平的中心区域而不是凸的中心区域。
与图6A的发光器件模块相比,图7A的发光器件模块还包括布置在荧光体层的侧表面和上表面上的透镜。发光器件的任一侧都可具有1000μm的宽度w1以及250μm的高度h1。发光器件的一个侧表面处的荧光体层的厚度w2可为100μm,并且发光器件的上表面处的荧光体层的厚度h2可为100μm。另外,透镜的侧表面的厚度w3可为100μm,并且透镜的上表面的厚度h3可为100μm。
虽然图7B的发光器件模块与图7A的实施例的相同,但是透镜的上表面的厚度h3可为200μm。
虽然图7C的发光器件模块与图7A的实施例的相同,但是透镜的侧表面的厚度w3可为200μm。
虽然图7D的发光器件模块与图7A的实施例的相同,但是透镜的侧表面的厚度w3以及透镜的上表面的厚度h3可分别为200μm。
假定根据图6A的比较实施例的发光器件模块的光输出为100,图7A至7D中所示的发光器件模块的光输出分别为102.3、102.8、102.2和102.7。另外,根据图6A的比较实施例的发光器件模块的视角为137.3°,并且图7A至7D中所示的发光器件模块的视角分别为143.15°、145.78°、142.21°和148.85°。
在图7A至7D中,当透镜被布置在荧光体层的上表面和侧表面上时,光输出提高并且视角增大。特别地,与图7B的发光器件模块一样,当透镜的侧表面的厚度w3等于荧光体层的侧表面的厚度w2,并且透镜的上表面的厚度h3约为荧光体层的上表面的厚度h2的两倍时,发光器件模块可能具有最大光输出。另外,与图7D的发光器件模块一样,当透镜的侧表面的厚度w3和透镜的上表面的厚度h3分别约为荧光体层的侧表面的厚度w2以及荧光体层的上表面的厚度h2的两倍时,发光器件模块可能具有最大视角。
上述发光器件模块可用作光源。例如,该发光器件可用作例如图像显示设备和照明设备的光源。
图8A至8C是图示上述发光器件模块的阵列的视图。
如图8A和8B中示例性所示的,上述发光器件模块200a可被设置成在单个电路板280上的单条线,以便在照明设备中使用,或者用作图像显示设备中的边缘式光源。
如图8C中示例性所示的,多个发光器件模块可被设置成在单个电路板280上的多行或多列。特别地,发光器件模块可用作图像显示设备中的垂直式光源。
当发光器件模块被用作图像显示设备或照明设备的光源时,可实现降低的材料成本以及增强的发光效率,并且整个光源可实现均匀色温。
通过上述说明应显而易见的是,由于降低了布线导致的光吸收或屏蔽,根据实施例的发光器件模块可实现降低的材料成本和增强的发光效率,因为省略了布线和引线框架,并且倒装芯片式发光器件直接耦合至电路板。另外,通过省略封装主体和封装主体上的反射层,发光器件模块可防止由于封装主体和反射层褪色导致的色温失真。
虽然已经参考其多个图示实施例描述了实施例,但是应理解,本领域技术人员可设计出将落入本公开原理的精神和范围内的许多其它变型和实施例。更特别地,在本公开、附图和附加权利要求的范围内的主旨组合布置的组件部分和/或布置中可能存在各种变体和变型。除了组件部分和/或布置的变体和变型之外,本领域技术人员也应明白可替换用法。
Claims (10)
1.一种发光器件模块,包括:
电路板;
发光器件,所述发光器件经由导电粘合剂结合至所述电路板上的导电层;
荧光体层,所述荧光体层被布置在所述发光器件的侧表面和上表面上;和
透镜,所述透镜被布置在所述电路板和所述荧光体层上,
其中,在所述发光器件和所述电路板之间设置有空隙。
2.一种发光器件模块,包括:
电路板;
发光器件,所述发光器件被配置成电接触所述电路板上的导电层;
荧光体层,所述荧光体层被布置在所述发光器件的侧表面和上表面上;和
透镜,所述透镜被布置在所述电路板和所述荧光体层上,
其中,所述荧光体层在所述发光器件的侧表面处与所述电路板间隔开。
3.根据权利要求1或权利要求2所述的模块,其中,布置在所述发光器件的侧表面上的荧光体层被设置为比所述发光结构的高度高。
4.根据权利要求3所述的模块,其中,所述发光器件具有彼此面对的第一侧表面和第二侧表面,并且所述第一侧表面处的所述荧光体层和所述电路板之间的距离等于所述第二侧表面处的所述荧光体层和所述电路板之间的距离。
5.根据权利要求1或权利要求2所述的模块,其中,所述荧光体层和所述透镜包括相同的材料。
6.根据权利要求1或权利要求2所述的模块,其中,所述透镜接触所述荧光体层和所述电路板。
7.根据权利要求1或权利要求2所述的模块,其中,所述透镜具有凹部,并且所述发光器件被插入所述凹部中。
8.根据权利要求7所述的模块,其中,所述凹部具有等于所述荧光体层的高度的深度。
9.根据权利要求1或权利要求2所述的模块,其中,所述发光器件的侧表面处的荧光体层的厚度等于所述发光器件的上表面处的荧光体层的厚度。
10.根据权利要求1或权利要求2所述的模块,其中,所述发光器件外部的所述透镜在其外围处的厚度大于所述发光器件的高度,并且小于所述发光器件的高度和所述荧光体层的高度的总和。
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